Number | Date | Country | Kind |
---|---|---|---|
9514773 | Jul 1995 | GB |
This is a continuation-in-part of application Ser. No. 08/683,322 filed Jul. 18, 1996, now abandoned.
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4731172 | Adachi et al. | Mar 1988 | A |
4940523 | Takeshima | Jul 1990 | A |
5002798 | Donley et al. | Mar 1991 | A |
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Number | Date | Country |
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2 078 245 | Mar 1993 | CA |
35 16 933 | Nov 1986 | DE |
202 898 | Oct 1993 | DE |
44 14 051 | Jul 1995 | DE |
0 198 459 | Oct 1986 | EP |
0 409 451 | Jul 1990 | EP |
0 534 905 | Mar 1993 | EP |
0 562 400 | Sep 1993 | EP |
2 586 430 | Feb 1987 | FR |
2 199 593 | Jul 1988 | GB |
2 228 268 | Aug 1990 | GB |
9114797 | Oct 1991 | WO |
9201081 | Jan 1992 | WO |
Entry |
---|
Adibi et al., “Design and characterization of a compact two-target ultrahigh vacuum magnetron sputter deposition system: Application to the growth of epitaxial Ti1-xAlxN alloys and TiN/Ti1-xAlxN superlattices”, Journal of Vacuum Science & Technology, vol. 11, No. 1, 136-142 (1993). No month. |
Grosseau-Poussard et al., “Microstructural and tribological characterization of MoSx coatings produced by high-energy ion-beam-assisted deposition”, Thin Solid Films vol. 244, No. 1, 52-57 (1993). No month. |
Seitzman et al., “Effects of temperature and ion-to-atom ratio on the orientation of IBAD MoS2 coatings”, Thin Solid Films vol. 260, No. 2, 143-147 (1995). No month. |
Patent Abstracts of Japan: JP 3014227, publication date Jan. 22, 1991; “Manufacture of Semiconductor Device”, vol. 15, No. 130 (E-1051). |
Patent Abstracts of Japan: JP 3097855, publication date Apr. 23, 1991; “Sputtering Device”, vol. 15, No. 282 (C-850). |
Number | Date | Country | |
---|---|---|---|
Parent | 08/683322 | Jul 1996 | US |
Child | 09/165030 | US |