Claims
- 1. An x-ray imaging detector comprising;
- a high resistivity substrate;
- a plurality of PIN diodes formed in said substrate;
- electronic read-out means formed on said substrate in which said PIN diodes have been fabricated to transform the charge collected by each PIN diode into an analog voltage;
- whereby said x-ray imaging detector can be connected directly to processing electronics.
- 2. The detector according to claim 1 in which said PIN diodes comprise; at least one n+ cathode formed on a surface of said high resistivity substrate; and a plurality of heavily doped p+ implanted regions in said substrate forming anodes associated with said n+ cathode.
- 3. The detector according to claim 2 in which said substrate includes an oxide layer; said p+ implants being implanted in apertures etched through said oxide layer in said substrate.
- 4. The detector according to claim 3 in which said electronic read-out means comprises a thin silicided poly conductor formed on top of said substrate connected to the anode implant of each of said PIN diodes.
- 5. The detector according to claim 4 in which said high resistivity substrate comprises a high resistivity epitaxial silicon layer having an oxide barrier layer.
- 6. The detector according to claim 5 in which said substrate includes an oxide layer on a p- wafer bonded to the oxide layer on said high resistivity epitaxial layer.
- 7. The detector according to claim 6 in which said substrate comprises an n+ wafer; said epitaxial high resistivity layer being formed on said n+ wafer.
- 8. The detector according to claim 7 in which said oxidized barrier layer comprises a first oxide layer formed on said high resistivity epitaxial layer, a second oxide layer formed on a p- wafer; said first and second oxide layers being placed together and bonded by an oxidation process.
- 9. The detector according to claim 8 in which said substrate has a nominal thickness in the range of 3,000 to 5,000 angstroms.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a division of applicant's patent application Ser. No. 08/495,239 filed Jun. 27, 1995 now U.S. Pat. No. 5,798,558.
US Referenced Citations (6)
Divisions (1)
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Number |
Date |
Country |
Parent |
495239 |
Jun 1995 |
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