Claims
- 1. A method of fabricating a semiconductor device, comprising the steps of:forming an insulating film on a surface of a first-conductivity-type semiconductor substrate; forming an electrode made of a conductor layer on said insulating film; doping an impurity for forming a first diffusion layer of a conductivity type opposite to said first-conductivity-type semiconductor substrate into the surface of said first-conductivity-type semiconductor substrate by using said electrode as a mask; and performing annealing by which the impurity diffuses in a lateral direction to change the entire surface region of said first-conductivity-type semiconductor substrate in a region below said electrode into said second-conductivity-type diffusion layer.
- 2. A method according to claim 1, wherein annealing step is performed before the step of forming a second diffusion layer serving as a source and a drain of a transistor.
- 3. A method of fabricating a semiconductor device, comprising the steps of:forming an insulating film on a surface of a first-conductivity-type semiconductor substrate; forming an electrode made of a conductor layer on said insulating film; and doping an impurity for forming a first diffusion layer of a conductivity type opposite to said first-conductivity-type semiconductor substrate into the surface of said first-conductivity-type semiconductor substrate in a region below said electrode by using rotatable tilted ion implantation.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-192146 |
Jul 1996 |
JP |
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CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a division of application Ser. No. 08/892,907, filed Jul. 15, 1997 now U.S. Pat. No. 5,912,509.
US Referenced Citations (6)
Foreign Referenced Citations (1)
Number |
Date |
Country |
1-146351 |
Jun 1989 |
JP |