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H01L21/8234

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/8234MIS technology

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of semiconductor structure
- Patent number 12,261,212
- Issue date Mar 25, 2025
- United Microelectronics Corp.
- Zhenhai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin on silicon-on-insulator
- Patent number 12,261,215
- Issue date Mar 25, 2025
- GlobalFoundaries U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating high-voltage (HV) device, medium-voltage (MV...
- Patent number 12,261,086
- Issue date Mar 25, 2025
- United Microelectronics Corp.
- Chih-Kai Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 12,261,204
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Mun Hyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement channel 2D material integration
- Patent number 12,261,209
- Issue date Mar 25, 2025
- Tokyo Electron Limited
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices by etching active fi...
- Patent number 12,261,087
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Min-Chul Sun
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,261,170
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,261,172
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,261,205
- Issue date Mar 25, 2025
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistor structure
- Patent number 12,261,214
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming low-stress silicon nitride layer through hydrogen treatment
- Patent number 12,261,036
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin isolation
- Patent number 12,261,051
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced loading effect
- Patent number 12,261,085
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside signal routing
- Patent number 12,261,116
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ching-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including isolation regions
- Patent number 12,261,200
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Min-Chul Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-end gate structures and method forming same
- Patent number 12,261,213
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures with etch stop layers for advan...
- Patent number 12,261,122
- Issue date Mar 25, 2025
- Intel Corporation
- Atul Madhavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner filler layer for multi-patterned metal gate for nanostructure...
- Patent number 12,255,100
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices having gate dielectric layers of varying th...
- Patent number 12,255,105
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Hsun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including backside contact structure having po...
- Patent number 12,255,248
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer structures for gate-all-around field effect transistors
- Patent number 12,255,249
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 12,255,247
- Issue date Mar 18, 2025
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,255,104
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-Vt nanosheet devices
- Patent number 12,255,106
- Issue date Mar 18, 2025
- Interational Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,255,230
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k feature formation processes and structures formed thereby
- Patent number 12,255,241
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming of inner spacer structure using semiconductor ma...
- Patent number 12,255,102
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET replacement gate formation with variable fin pitch
- Patent number 12,255,204
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation structure
- Patent number 12,255,205
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching method and semiconductor structure manufactured u...
- Patent number 12,255,074
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Da Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
- Publication number 20250072116
- Publication date Feb 27, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250069893
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FINGER TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072092
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Su Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20250072096
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Gi Woong SHIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20250072097
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chuan-Hui LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
- Publication number 20250072099
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250072028
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250072070
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chen An Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY DEVICE FOR CORE DEVICE TO OPERATE IN A SAFE OPERATING AREA AN...
- Publication number 20250072104
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SZU-CHUN TSAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT
- Publication number 20250072069
- Publication date Feb 27, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250072101
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072082
- Publication date Feb 27, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- I-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250063803
- Publication date Feb 20, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE
- Publication number 20250063805
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
- Publication number 20250063807
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hung-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063808
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- KUAN-TING PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME
- Publication number 20250063778
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063789
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063788
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Min CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20250056835
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE BACKSIDE ISOLATION FEATURE INTEGRATION
- Publication number 20250056865
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS

MIS technology

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing method of semiconductor structure

Fin on silicon-on-insulator

Method for integrating high-voltage (HV) device, medium-voltage (MV...

Semiconductor devices and methods for fabricating the same

Replacement channel 2D material integration

Methods of manufacturing semiconductor devices by etching active fi...

Semiconductor devices and methods of manufacturing thereof

Semiconductor devices and methods of manufacturing thereof

Semiconductor device

Multi-gate transistor structure

Forming low-stress silicon nitride layer through hydrogen treatment

Semiconductor device with fin isolation

Semiconductor device with reduced loading effect

Backside signal routing

Semiconductor device including isolation regions

Fin-end gate structures and method forming same

Contact over active gate structures with etch stop layers for advan...

Inner filler layer for multi-patterned metal gate for nanostructure...

Gate-all-around devices having gate dielectric layers of varying th...

Semiconductor device including backside contact structure having po...

Inner spacer structures for gate-all-around field effect transistors

Trench contact structures for advanced integrated circuit structure...

Semiconductor device and method of manufacture

Multi-Vt nanosheet devices

Semiconductor structure and method for forming the same

Low-k feature formation processes and structures formed thereby

Methods of forming of inner spacer structure using semiconductor ma...

Vertical FET replacement gate formation with variable fin pitch

Semiconductor device with isolation structure

Selective etching method and semiconductor structure manufactured u...

Patents Applicationslast 30 patents

NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

MULTI-FINGER TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

DUMMY DEVICE FOR CORE DEVICE TO OPERATE IN A SAFE OPERATING AREA AN...

RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SPECIALIZED TRANSISTORS

CONTACT GATE ISOLATION

INTEGRATED CIRCUIT STRUCTURE

SEMICONDUCTOR DEVICE BACKSIDE ISOLATION FEATURE INTEGRATION