Claims
- 1. In a process of making a submicron p-type complementary metal oxide semiconductor in a buried channel field effect transistor comprising:depositing a predoped n+ type polysilicon layer on a substrate, the improvement of adjusting the gate workfunction difference with boron without changing the n-type characteristics of the gate comprising: depositing a sacrificial layer of silicon oxide or silicon nitride over the polysilicon layer; counterdoping the n+ gate by ion implanting boron to a level of about 1×1013cm2 to about 5×1016cm2 in the polysilicon layer; and removing the sacrificial layer of silicon oxide or silicon nitride prior to completion of the gate.
- 2. A process according to claim 1 wherein the polysilicon is doped with arsenic or phosphorus to a level of about 1×1020cm3 to about 1×1021cm3.
- 3. In a process of making an n-type metal oxide semiconductor field effect transistor comprising depositing a pre-doped p+ type polysilicon layer on a substrate, the improvement which comprises depositing a sacrificial layer of silicon oxide or silicon nitride over the polysilicon layer;ion implanting positive dopant ions to a level of about 1×1013cm2 to about 5×1016cm2 in the polysilicon layer; and removing the sacrificial layer of silicon oxide or silicon nitride.
Parent Case Info
This is a divisional, of application Ser. No. 08/856,336 filed May 14, 1997, U.S. Pat. No. 5,932,919 which is a continuation of appication Ser. No. 08/163,108 filed Dec. 7, 1993, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4555842 |
Levinstein et al. |
Dec 1985 |
A |
4808555 |
Mauntel et al. |
Feb 1989 |
A |
Continuations (1)
|
Number |
Date |
Country |
Parent |
08/163108 |
Dec 1993 |
US |
Child |
08/856336 |
|
US |