Claims
- 1. A magnetic memory cell comprising:
a first magneto-resistive device having a first sense layer; and, a second magneto-resistive device connected in series with the first magneto-resistive device, the second magneto-resistive device having a second sense layer; wherein at least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
- 2. A magnet memory cell as in claim 1 wherein each of the first sense layer and the second sense layer has at least one controlled nucleation site.
- 3. A magnet memory cell as in claim 1 wherein nucleation sites on the first sense layer are different in shape relative to nucleation sites on the second sense layer.
- 4. A magnet memory cell as in claim 1 wherein nucleation sites on the first sense layer are different in size relative to nucleation sites on the second sense layer.
- 5. A magnet memory cell as in claim 1 wherein nucleation sites on the first sense layer are different in placement relative nucleation sites on the second sense layer.
- 6. An information storage device composed of a plurality of magnetic memory cells, each cell comprising:
a first magneto-resistive device; and, a second magneto-resistive device connected in series with the first magneto-resistive device; wherein the plurality of magnetic memory cells have increased switching predictability resulting from placement of at least one controlled nucleation site on a sense layer of at least one of the first magneto-resistive device and the second magneto-resistive device.
- 7. An information storage device as in claim 6 wherein a sense layer for each of the first magneto-resistive device and the second magneto-resistive device have at least one controlled nucleation site.
- 8. An information storage device as in claim 6 wherein nucleation sites on a sense layer of the first magneto-resistive device are different in shape relative to nucleation sites on a sense layer of the second magneto-resistive device.
- 9. An information storage device as in claim 6 wherein nucleation sites on a sense layer of the first magneto-resistive device are different in location relative to nucleation sites on a sense layer of the second magneto-resistive device.
- 10. An information storage device as in claim 6 wherein nucleation sites on a sense layer of the first magneto-resistive device are different in size relative to nucleation sites on a sense layer of the second magneto-resistive device.
- 11. A method for producing a magnetic memory cell comprising the following:
forming a first magneto-resistive device having a first sense layer, including:
placing at least one controlled nucleation site on the first sense layer; and, forming a second magneto-resistive device connected in series with the first magneto-resistive device, the second magneto-resistive device having a second sense layer, including:
placing at least one controlled nucleation site on the second sense layer.
- 12. A method as in claim 11 wherein nucleation sites on the first sense layer are different in shape relative to nucleation sites on the second sense layer.
- 13. A method as in claim 11 wherein nucleation sites on the first sense layer are different in size relative to nucleation sites on the second sense layer.
- 14. A method as in claim 11 wherein nucleation sites on the first sense layer are different in placement relative to nucleation sites on the second sense layer.
- 15. A device comprising:
a magnetic random access memory, the magnetic random access memory comprising a plurality of magnetic memory cell, each magnetic memory cell comprising:
a first magneto-resistive device having a first sense layer, and a second magneto-resistive device connected in series with the first magneto-resistive device, the second magneto-resistive device having a second sense layer; wherein at least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
- 16. A device as in claim 15 wherein the device is a long term data storage device.
- 17. A device as in claim 15 wherein the device is a solid state hard drive.
- 18. A device as in claim 15 wherein the device is a digital camera.
- 19. A device as in claim 15 wherein the device is a processor.
- 20. A device as in claim 15 wherein the device is a network appliance.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of co-pending U.S. patent application Ser. No. 09/925,755 filed Aug. 9, 2001 and co-pending U.S. patent application Ser. No. 10/173,195 filed Jun. 17, 2002.
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
09925755 |
Aug 2001 |
US |
Child |
10449261 |
May 2003 |
US |
Parent |
10173195 |
Jun 2002 |
US |
Child |
10449261 |
May 2003 |
US |