Embodiments of the present invention pertain to the field of semiconductor processing and, in particular, to methods for dicing substrates, each substrate having an integrated circuit (IC) thereon.
In semiconductor substrate processing, ICs are formed on a substrate (also referred to as a wafer), typically composed of silicon or other semiconductor material. In general, thin film layers of various materials which are either semiconducting, conducting or insulating are utilized to form the ICs. These materials are doped, deposited and etched using various well-known processes to simultaneously form a plurality of ICs, such as memory devices, logic devices, photovoltaic devices, etc., in parallel on a same substrate.
Following device formation, the substrate is mounted on a supporting member such as an adhesive film stretched across a film frame and the substrate is “diced” to separate each individual device or “die” from one another for packaging, etc. Currently, the two most popular dicing techniques are scribing and sawing. For scribing, a diamond tipped scribe is moved across a substrate surface along pre-formed scribe lines. Upon the application of pressure, such as with a roller, the substrate separates along the scribe lines. For sawing, a diamond tipped saw cuts the substrate along the streets. For thin substrate singulation, such as <150 μms (μm) thick bulk silicon singulation, the conventional approaches have yielded only poor process quality. Some of the challenges that may be faced when singulating die from thin substrates may include microcrack formation or delamination between different layers, chipping of inorganic dielectric layers, retention of strict kerf width control, or precise ablation depth control.
While plasma dicing has also been contemplated, a standard lithography operation for patterning resist may render implementation cost prohibitive. Another limitation possibly hampering implementation of plasma dicing is that plasma processing of commonly encountered interconnect metals (e.g., copper) in dicing along streets can create production issues or throughput limits. Finally, masking of the plasma dicing process may be problematic, depending on, inter alia, the thickness and top surface topography of the substrate, the selectivity of the plasma etch, and the materials present on the top surface of the substrate.
Embodiments of the present invention include methods of laser scribing substrates. In the exemplary embodiment, the laser scribing is implemented as a first operation in a hybrid dicing process including both laser scribing and plasma etching.
In an embodiment, a method of dicing a semiconductor substrate having a plurality of ICs includes receiving a masked semiconductor substrate, the mask covering and protecting ICs on the substrate. The masked substrate is ablated along streets between the ICs with a point on the substrate exposed to increasing irradiance. In one embodiment, at least a portion of the mask thickness in the street is ablated through exposure to electromagnetic radiation of first irradiance (optical intensity) to provide a patterned mask with gaps or trenches. At least a portion of a thin film device layer stack disposed below the mask is then ablated through exposure to electromagnetic radiation having second irradiance to expose regions of the substrate between the ICs. The ICs are then singulated into chips, for example by plasma etching through the exposed substrate following the trenches in the patterned mask.
In another embodiment, a system for dicing a semiconductor substrate includes a laser scribe module and a plasma etch chamber, integrated onto a same platform. The laser scribe module is to iteratively scribe the substrate and the plasma chamber is to etch through the substrate and singulate the IC chips. The laser scribe module may include one or more of a multiple lasers, a multi-pass controller, or a beam shaper to scribe the substrate via exposure to a plurality of optical intensities.
In another embodiment, a method of dicing a substrate having a plurality of ICs includes receiving a masked silicon substrate. The ICs include a copper bumped top surface having bumps surrounded by a passivation layer, such as polyimide (PI). Subsurface thin films below the bumps and passivation include a low-κ interlayer dielectric (ILD) layer and a layer of copper interconnect, the entire set of layers comprising a device film layer stack. A femtosecond laser ablates, through irradiation, a predetermined pattern of trenches into the film layer stack by one or more sequential laser irradiation steps and into a thin film IC stack disposed below the mask with a second irradiance to expose a portion of a substrate and may further ablate into the same substrate such that there is sufficiently small amounts of residual film layer stack remaining on the substrate at the trench bottoms. The ablation leads with a first irradiance and follows with a second irradiance greater than, less than, or essentially equal to the first irradiance. The kerf width may additionally be reduced or increased with changing irradiance. A plasma etch is performed in a plasma etch chamber to additionally remove substrate material below the removed film layer stack to singulate individual ICs out of the single substrate. Any remaining mask material is then removed by a suitable method such as washing by solvent or dry plasma cleaning.
Embodiments of the present invention are illustrated by way of example, and not limitation, in the figures of the accompanying drawings in which:
Methods of dicing substrates, each substrate having a plurality of ICs thereon, are described. In the following description, numerous specific details are set forth, such as femtosecond laser scribing and deep silicon plasma etching conditions in order to describe exemplary embodiments of the present invention. However, it will be apparent to one skilled in the art that embodiments of the present invention may be practiced without these specific details. In other instances, well-known aspects, such as IC fabrication, substrate thinning, taping, etc., are not described in detail to avoid unnecessarily obscuring embodiments of the present invention. Reference throughout this specification to “an embodiment” means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase “in an embodiment” in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments. Also, it is to be understood that the various exemplary embodiments shown in the Figures are merely illustrative representations and are not necessarily drawn to scale.
The terms “coupled” and “connected,” along with their derivatives, may be used herein to describe structural relationships between components. It should be understood that these terms are not intended as synonyms for each other. Rather, in particular embodiments, “connected” may be used to indicate that two or more elements are in direct physical or electrical contact with each other. “Coupled” may be used to indicate that two or more elements are in either direct or indirect (with other intervening elements between them) physical or electrical contact with each other, and/or that the two or more elements co-operate or interact with each other (e.g., as in a cause and effect relationship).
The terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one material layer with respect to other material layers. As such, for example, one layer disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer disposed between two layers may be directly in contact with the two layers or may have one or more intervening layers. In contrast, a first layer “on” a second layer is in contact with that second layer. Additionally, the relative position of one layer with respect to other layers is provided assuming operations are performed relative to a substrate without consideration of the absolute orientation of the substrate.
Generally, described herein is a laser scribe process employing a plurality of optical intensities to cleanly ablate a predetermined path through an unpatterned (i.e., blanket) mask layer, a passivation layer, and subsurface thin film device layers. The laser scribe process may then be terminated upon exposure of, or partial ablation of, the substrate. The ablation processing employs first of a plurality of optical intensities to remove upper layers (e.g., mask and thin film device layers) which are more easily damaged relative to the substrate and/or other thin film device layers. Subsequent ablation down to and including a portion of the substrate may then proceed without exposing the easily damaged layers to the higher intensity radiation employed. As employed herein the term “iterative ablation” refers to an ablation process which exposes a point on a substrate to laser radiation having a plurality of optical intensities.
In accordance with an embodiment of the present invention, at least a portion of the iterative laser scribing process employs a femtosecond laser. Femtosecond laser scribing is essentially, if not completely, non-equilibrium process. For example, the femtosecond-based laser scribing may be localized with a negligible thermal damage zone. In an embodiment, femtosecond laser scribing is used to singulate ICs having ultra-low κ films (i.e., with a dielectric constant below 3.0). In one embodiment, direct writing with a laser eliminates a lithography patterning operation, allowing the masking material to be something other than a photo resist as is used in photolithography. In the exemplary hybrid dicing embodiment, an iterative laser scribing process is followed by a plasma etch through the bulk of the substrate. In one such embodiment, a substantially anisotropic etching is used to complete the dicing process in a plasma etch chamber; the anisotropic etch achieving a high directionality into the substrate by depositing on sidewalls of the etched trench an etch polymer.
Referring to operation 101 of
In embodiments, first and second ICs 425, 426 include memory devices or complimentary metal-oxide-semiconductor (CMOS) transistors fabricated in a silicon substrate 406 and encased in a dielectric stack. A plurality of metal interconnects may be formed above the devices or transistors, and in surrounding dielectric layers, and may be used to electrically couple the devices or transistors to form the ICs 425, 426. Materials making up the street 427 may be similar to or the same as those materials used to form the ICs 425, 426. For example, street 427 may include thin film layers of dielectric materials, semiconductor materials, and metallization. In one embodiment, the street 427 includes a test device similar to the ICs 425, 426. The width of the street 427 may be anywhere between 10 μm and 200 μm, measured at the thin film device layer stack/substrate interface.
In embodiments, the mask 402 may be one or more material layers including any of a plasma deposited polymer (e.g., CxFy), a water soluble material (e.g., poly(vinyl alcohol)), a photoresist, or similar polymeric material which may be removed without damage to an underlying passivation layer, which is often polyimide (PI) and/or bumps, which are often copper. The mask 402 is to be of sufficient thickness to survive a plasma etch process (though it may be very nearly consumed) and thereby protect the copper bumps which may be damaged, oxidized, or otherwise contaminated if exposed to the substrate etching plasma.
Refer ring back to
At operation 104, the predetermined pattern is directly written with a second ablation iteration along the controlled path relative to the substrate 406. Referring to the exemplary embodiment in
Depending on the embodiment the laser radiation 412 (
As further illustrated in
Iterative ablation (e.g., operations 103 and 104) may be implemented in a number of manners to achieve the change in irradiance illustrated in
In an embodiment, the laser source for operation 201 has a pulse repetition rate approximately in the range of 200 kHz to 10 MHz, although preferably approximately in the range of 500 kHz to 5 MHz. The laser emission generated at operation 201 may span any combination of the visible spectrum, the ultra-violet (UV), and/or infra-red (IR) spectrums for a broad or narrow band optical emission spectrum. Even for femtosecond laser ablation, certain wavelengths may provide better performance than others depending on the materials to be ablated. In a specific embodiment, a femtosecond laser suitable for semiconductor substrate or substrate scribing is based on a laser having a wavelength of approximately less than or equal to 1570-200 nanometers, although preferably in the range of 540 nanometers to 250 nanometers. In a particular embodiment, pulse widths are less than or equal to 400 femtoseconds for a laser having a wavelength less than or equal to 540 nanometers. In an alternative embodiments, dual laser wavelengths (e.g., a combination of an IR laser and a UV laser) are used to generate the beam at operation 201. In an embodiment, the laser source delivers pulse energy at the work surface approximately in the range of 0.5 μJ to 100 μJ, although preferably approximately in the range of 1 μJ to 5 μJ.
At operation 205, the generated beam is shaped to vary an optical intensity (irradiance) spatial profile as exemplified by
At operations 210 and 215, the spatially shaped beam is controlled to travel a predetermined path relative to the substrate to ablate a point on the mask 402 first with the leading portion of the beam (e.g., as illustrated in
At operation 240, the beam is adjusted to have the second irradiance, I2, (e.g., Gaussian 340 from
At operation 265, a second laser generates a second beam with a second irradiance. Generation of the second beam with the second irradiance I2 (e.g., Gaussian 335 from
At operation 270 the second laser beam is moved along the same predetermined path to completely ablate the thin film device stack and expose the substrate, substantially as illustrated in
Returning to
In one embodiment, the etch operation 105 entails a through via etch process. For example, in a specific embodiment, the etch rate of the material of substrate 406 is greater than 25 μms per minute. A high-density plasma source operating at high powers may be used for the plasma etching operation 105. Exemplary powers range between 3 kW and 6 kW, or more.
In an exemplary embodiment, a deep silicon etch (i.e., such as a through silicon via (TSV) etch) is used to etch a single crystalline silicon substrate or substrate 406 at an etch rate greater than approximately 40% of conventional silicon etch rates while maintaining essentially precise profile control and virtually scallop-free sidewalls. Effects of the high power on any water soluble material layer present in the mask 402 are controlled through application of cooling power via an electrostatic chuck (ESC) chilled to −10° C. to −15° C. to maintain the water soluble mask material layer at a temperature below 100° C. and preferably between 70° C. and 80° C. throughout the duration of the plasma etch process. At such temperatures, water solubility is advantageously maintained.
In a specific embodiment, the plasma etch operation 105 further entails a plurality of protective polymer deposition cycles interleaved over time with a plurality of etch cycles. The duty cycle may vary with the exemplary duty cycle being approximately 1:1-1:2 (etch:dep). For example, the etch process may have a deposition cycle with a duration of 250 msec-750 msec and an etch cycle of 250 msec-750 msec. Between the deposition and etch cycles, an etching process chemistry, employing for example SF6 for the exemplary silicon etch embodiment, is alternated with a deposition process chemistry employing a polymerizing fluorocarbon (CxFy) gas such as, but not limited to, C4F6 or C4F8 or fluorinated hydrocarbon (CHxFy with x>=1), or XeF2. Process pressures may further be alternated between etch and deposition cycles to favor each in the particular cycle, as known in the art.
At operation 107, method 300 is completed with removal of the mask 402. In an embodiment, a water soluble mask layer is washed off with water, for example with a pressurized jet of de-ionized water or through submergence in an ambient or heated water bath. In alternative embodiments, the mask 402 may be washed off with aqueous solvent solutions known in the art to be effective for etch polymer removal. Either of the plasma singulation operation 105 or mask removal process at operation 107 may further pattern the die attach film 408, exposing the top portion of the backing tape 410.
A single integrated process tool 600 may be configured to perform many or all of the operations in the hybrid laser ablation-plasma etch singulation process 100. For example,
A laser scribe apparatus 610 is also coupled to the FI 602.
Returning to
The cluster tool 606 may include other chambers suitable for performing functions in the hybrid laser ablation-plasma etch singulation process 100. In the exemplary embodiment illustrated in
Processor 702 represents one or more general-purpose processing devices such as a microprocessor, central processing unit, or the like. More particularly, the processor 702 may be a complex instruction set computing (CISC) microprocessor, reduced instruction set computing (RISC) microprocessor, very long instruction word (VLIW) microprocessor, etc. Processor 702 may also be one or more special-purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), network processor, or the like. Processor 702 is configured to execute the processing logic 726 for performing the operations and steps discussed herein.
The computer system 700 may further include a network interface device 708. The computer system 700 also may include a video display unit 710 (e.g., a liquid crystal display (LCD) or a cathode ray tube (CRT)), an alphanumeric input device 712 (e.g., a keyboard), a cursor control device 714 (e.g., a mouse), and a signal generation device 716 (e.g., a speaker).
The secondary memory 718 may include a machine-accessible storage medium (or more specifically a computer-readable storage medium) 731 on which is stored one or more sets of instructions (e.g., software 722) embodying any one or more of the methodologies or functions described herein. The software 722 may also reside, completely or at least partially, within the main memory 704 and/or within the processor 702 during execution thereof by the computer system 700, the main memory 704 and the processor 702 also constituting machine-readable storage media. The software 722 may further be transmitted or received over a network 720 via the network interface device 708.
The machine-accessible storage medium 731 may also be used to store pattern recognition algorithms, artifact shape data, artifact positional data, or particle sparkle data. While the machine-accessible storage medium 731 is shown in an exemplary embodiment to be a single medium, the term “machine-readable storage medium” should be taken to include a single medium or multiple media (e.g., a centralized or distributed database, and/or associated caches and servers) that store the one or more sets of instructions. The term “machine-readable storage medium” shall also be taken to include any medium that is capable of storing or encoding a set of instructions for execution by the machine and that cause the machine to perform any one or more of the methodologies of the present invention. The term “machine-readable storage medium” shall accordingly be taken to include, but not be limited to, solid-state memories, and optical and magnetic media.
It has been found that while is feasible to keep laser beam irradiance (or fluence assuming a fixed pulse width) at fixed moderate level for multiple passes to generate clean etch trenches, the range of laser power (or pulse energy) levels associated with the optimized fluence level is narrow. This has the practical effect of rendering the laser scribing process window relatively small. It has also been found that a fixed high fluence for multiple passes produces a relatively poor trench topology currently thought to be attributable to a second laser pass redepositing ablated materials onto the trench formed by a first pass.
While a clean trench can be formed with a multiple pass scribing process where a low fluence is employed in the first pass to remove only mask and polyimide layers with limited damage/ablation of an underlying thin film IC layer (more particularly a dielectric layer), and the a high fluence is subsequently employed to remove the device layers to expose the substrate (as in the method 100 illustrated in
In certain embodiments therefore, the scribing method includes a first (second, third, etc.) pass at a high irradiance (fluence) level to ablate and remove the materials in the trench to expose the substrate and then a second (third, fourth, etc.) pass at a low irradiance (fluence) level to remove debris and residues left over in the ablated trench without significant damage to the substrate. This type of “high-fluence-first” process may render a clean exposed substrate surface with a wider process window than either a fixed fluence multiple pass process or a low-fluence-first process. As mask or polymeric passivation layers get thicker relative to the scribe trench width (e.g., width is reduced or layer thickness is increased), a high-fluence-first approach becomes more advantageous.
At operation 255, a first beam having the first irradiance is generated. The beam is generated in any of the manners described elsewhere herein. In one embodiment, a laser having a predetermined pulse width, such as the femtosecond pulse widths described elsewhere herein, is operated at a first fluence level no less than 1.0 μJ, and preferably 1.5 μJ or higher for a 10 μm diameter spot size to achieve the first irradiance. This fluence level range is sufficient to ablate dielectric layers of the thin film IC stack (e.g., layers 504 and 507 in
At operation 860, a beam from the laser operating at the first fluence level moves along a predetermined path to ablate trenches through the masking material, IC passivation, and thin film device layers to expose the substrate.
In
Returning to
At operation 870, a beam from the laser operating at the second fluence level moves along the same predetermined path followed at operation 860 to ablate trenches through the masking material, IC passivation, and thin film device layers to remove the splats of residue 802 left by the operation 860. As further illustrated in
Returning to
It should be noted that high-fluence-first embodiments exemplified by method 801 may be implemented with any of the techniques and hardware described elsewhere herein in terms of an exemplary low-fluence-first process. For example, in one embodiment the iterative ablating operations 860 and 870 may be performed with multiple passes with a same laser operating at different fluence levels or with multiple lasers performing one or more pass. Similarly, beam shaping techniques may be performed to vary the spatial profile of the beam. For example, direction of travel may be reversed from that shown in
As an alternative to the multi-step method 801 which either involves a power re-adjustment or a second laser for the second pass (operations 265 and 870), higher throughput may be achieved with the multi-step method 901 illustrated in
Any commercially available variable beam splitter may be utilized for operation 965. For example, in one embodiment a coated disk of glass in which the reflectivity of the coating varies angularly, so that on rotating the disk one can select the desired power ratio between two beams produced by the device is employed. In a further embodiment, a diffractive optical element (DOE) is employed where a phase grating concentrates most of the laser energy on two diffraction orders. In an embodiment where a diffractive beam splitter is used to duplicate a master beam into multiple replica beams having diameters equal to that of the input beam and positioned in a one- or two-dimensional array at well-specified angles, the phase profile of the beam generated at operation 201 is chosen so that the power ratio between the diffraction orders has a prescribed value. In further embodiments, different power ratios between produced replicas may be chosen on adjacent diffracting elements of the grating. Accordingly, a lateral shift in position of the DOE selects the desired value of the power ratio between the multiple beam replicas used to implement split beam method 901.
As illustrated by the B-B view of the beam spot pattern in
Thus, methods of dicing semiconductor substrates, each substrate having a plurality of ICs, have been disclosed. The above description of illustrative embodiments of the invention, including what is described in the Abstract, is not intended to be exhaustive or to limit the invention to the precise forms disclosed. While specific implementations of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize. The scope of the invention is therefore to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.
This is a Divisional Application of U.S. patent application Ser. No. 13/180,336 filed Jul. 11, 2011, which is a Continuation-in-Part (CIP) of U.S. patent application Ser. No. 13/160,822, filed on Jun. 15, 2011.
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