Patent Application
20130320217
This invention relates to a neutron detection device for use in the detection of a neutron. More specifically, the invention relates to a neutron detection device equipped with a thick neutron detection scintillator composed of a colquiriite-type fluoride single crystal, and a silicon photodiode, the crystal containing 0.80 atom/nm3 or more of 6Li and having only a certain Eu content.
A neutron detection device is used in a radiation controlled area, such as a nuclear reactor, and in the security field. Detectors using a 3He gas, which utilize 3He(n,p)T reaction between 3He and neutrons, have been mainly used. neutrons are classified, according to energy, into a thermal neutron (about 0.025 eV), an epithermal neutron (about 1 eV), a slow neutron (0.03 to 100 eV), an intermediate neutron (0.1 to 500 keV), and a fast neutron (500 key or more). A high energy neutron, for example, a fast neutron, is so low in the probability of occurrence of 3He(n,p)T reaction that a neutron detection device using a 3He gas exhibits a low sensitivity in detecting it. Thus, a main target to be detected by the neutron detection device is a thermal neutron which has low energy. In detecting a fast neutron, it is common practice to slow the fast neutron down to a thermal neutron with the use of a moderator formed of polyethylene or the like, and then perform detection. For example, use is made of a rem-counter or a Bonner sphere spectrometer in which a neutron detector unit using 3He is covered with a spherical polyethylene moderator.
As noted above, neutron detection devices using a 3He gas have long been used as neutron detection devices with high sensitivity to a thermal neutron. Because of the rarity of a 3He gas, however, the price of such devices has skyrocketed in recent years. Moreover, gas-type detectors are large-sized, and inconvenient to handle. Hence, switching to alternative technologies is desired. As an example of the alternative technology, a detection device having a 6LiF film formed on a light receiving surface of a silicon photodiode has been reported (Non-Patent Document 1). This detection device utilizes lithium-6 (6Li) which, like 3He, causes a nuclear reaction with thermal neutrons. In the detection device, a thermal neutron is detected in the following manner: The nuclear reaction between a thermal neutron and 6Li generates an alpha ray, and the alpha ray is thrown onto the light receiving surface of the silicon photodiode. During this process, the current-voltage characteristics of the silicon photodiode change, and the thermal neutron can be detected based on this change. Such a detection device, however, has not yet been put to practical use. This is because the 6LiF film needs to be thickened in order to obtain sufficient detection efficiency for a neutron, but the 6LiF film has the property of absorbing an alpha ray, and so cannot be thickened. If the 6LiF film is thickened, many of the alpha rays generated by the nuclear reaction are absorbed during passage through the film, with the result that the amount of the alpha rays arriving at the silicon diode decreases.
A method using a neutron detection scintillator containing Li instead of the 6LiF film is conceivable as a solution to the problem of the thickness. The neutron detection scintillator, as used herein, refers to a scintillator composed of a substance which, when hit by a neutron, emits fluorescence. The 6Li-containing neutron detection scintillator emits light by the following mechanism: When the scintillator is irradiated with thermal neutrons, the thermal neutrons and 6Li cause a nuclear reaction to produce alpha rays, and the alpha rays excite luminescence center elements, to emit fluorescence. The 6Li-containing neutron detection scintillator can be thickened. This scintillator, like the 6LiF film, also has the property of absorbing alpha rays. With the scintillator, however, alpha rays are promptly converted into light emissions, and the emitted light is minimally absorbed within the scintillator. As far as the scintillator is transparent enough to allow the resulting fluorescence to arrive at the silicon photodiode, the emitted light is supposed to reach the light receiving surface, even if the thickness in a direction perpendicular to the light receiving surface is great.
However, even a detection device comprising a combination of the above-described 6Li-containing neutron detection scintillator and a silicon photodiode has not found practical use. Generally, the silicon photodiode has high sensitivity to light with a long wavelength, especially, light of about 900 nm, but has low sensitivity to light with a short wavelength of 400 nm or less. So far, 6Li glass scintillators have been generally used as 6Li-containing neutron detection scintillators. The emission wavelength of these scintillators is 395 nm, and the emission intensity at this wavelength is low. Thus, the conventional 6Li glass scintillators have been unsuitable for combination with the silicon photodiode.
An example of a neutron detection scintillator having a relatively long emission wavelength is terbium-doped gadolinium oxysulfide (Tb:Gd2O2S) with an emission wavelength of 540 nm. A neutron imaging machine having this scintillator in combination with an image intensifier has been proposed (Non-Patent Document 2). However, the effective atomic number of Tb:Gd2O2S is 61, and is very high compared with lithium calcium aluminum fluoride {(LiCaAlF6) effective atomic number 14}, lithium strontium aluminum fluoride {(LiSrAlF6) effective atomic number 30} or the like. Thus, Tb:Gd2O2S is sensitive to gamma rays, as well as to a neutron, so that a neutron detection device having a scintillator made of Tb:Gd2O2S has posed difficulty in detecting only a neutron. As a neutron detection scintillator having a relatively long emission wavelength, like Tb:Gd2O2S, europium-doped lithium iodide (Eu:6LiI) is also named. Eu:6LiI can also be combined with a silicon photodiode, but is difficult to process because of its severe deliquescent properties. Moreover, it has a relatively high effective atomic number of 46, and it is sensitive to gamma rays as well. Thus, it has been difficult for Eu:6LiI to detect only a neutron.
The present inventors have previously proposed some neutron detection scintillators which can be used in combination with silicon photodiodes and which have so low effective atomic numbers as to hardly cause light emission in response to gamma rays.
Concretely, they have proposed in Patent Document 1 a neutron detection scintillator composed of a colquiriite-type fluoride monocrystal containing a period 4 element such as Ti, containing 0.80 atom/nm3 or more of 6Li, and further containing Ce or/and Eu. The scintillator of Patent Document 1 emits light of a long wavelength because it contains the period 4 element. Thus, it can be combined with a silicon photodiode. Besides, it emits light of a short wavelength because of its containment of Ce or/and Eu. Thus, it can also be combined with a photomultiplier tube.
In Patent Document 2, the inventors have proposed a neutron detection scintillator composed of a colquiriite-type fluoride monocrystal containing at least two rare earth elements and also containing 0.80 atom/nm3 or more of 6Li. The scintillator of Patent Document 2 emits light of a short wavelength by containing Ce and/or Eu as a rare earth element. Thus, it can be combined with a photomultiplier tube. Besides, it contains a rare earth element other than Ce or Eu, thereby emitting light of a long wavelength. Thus, it can also be combined with a silicon photodiode.
In Patent Document 3, the inventors have proposed a scintillator comprising a metal fluoride crystal containing lithium and a metallic element having a valence of 2 or higher, the crystal containing 1.1 to 20 atoms/nm3 of ti, having an effective atomic number of 10 to 40, and containing a lanthanoid such as Eu.
The scintillators of Patent Documents 1 to 3 can be combined with silicon photodiodes, and hardly cause light emission ascribed to gamma rays. However, none of Patent Documents 1 to 3 have considered increasing detection efficiency for a neutron by thickening the scintillator.
The efficiency of detecting neutron radiation depends on a plurality of factors such as the ratio of neutrons causing a nuclear reaction among neutrons irradiated; whether or not alpha rays generated by the reaction between neutrons and ti are absorbed within the scintillator; and whether or not light generated by the reaction between alpha rays and the luminescence center elements is decreased by concentration quenching.
When the thickness of the scintillator is increased, therefore, the performance of the scintillator is not necessarily enhanced as compared with when the scintillator is thin. This is because it is highly likely that the efficiency of detection will be decreased, or performance other than the detection efficiency will be lowered, by the influence of concentration quenching, ease of processing, transparency of the crystal constituting the scintillator, and so forth. Hence, it remains difficult to predict what features the resulting scintillator will have, before investigating appropriate constituent elements, the type of the crystal which forms a basic structure, thickness and so on preparing a scintillator actually, and further evaluating the various performance characteristics of the scintillator.
It is an object of the present invention to provide a compact, lightweight neutron detection device having a sufficiently high neutron detection efficiency and equipped with a neutron detection scintillator minimally affected by gamma rays.
The present inventors have conducted in-depth studies in an attempt to solve the above-mentioned problems. As a result, they have found that when a colquiriite-type fluoride single crystal incorporating a specific amount of Eu is combined with a silicon photodiode, fluorescence produced by the single crystal can be unexpectedly received by the silicon photodiode, although its wavelength is as short as about 370 nm. The reason may be that the emission intensity of the short-wavelength light is high. Moreover, the single crystal has a lower effective atomic number than those of the conventional scintillators. Thus, a neutron detection device comprising a combination of a scintillator composed of the single crystal and a silicon photodiode has low sensitivity to gamma rays, and can be used as a neutron detector. Furthermore, it has been found that when the content of Eu is set in a certain range and the thickness of the scintillator is increased, the detection efficiency for a neutron is heightened.
According to the present invention, there is provided a neutron detection device equipped with a neutron detection scintillator composed of a colquiriite-type fluoride single crystal, and a silicon photodiode,
wherein the single crystal includes only Eu and contains 0.80 atom/nm3 or more of 6Li,
the content of Eu is 0.0025 to 0.05 mol %, and
the thickness of the scintillator exceeds 1 mm.
In the neutron detection device of the present invention, it is preferred that the single crystal contains Eu in a basic single crystal of a composition represented by LiCaAlF6, LiSrAlF6 or LiCa1-xSrxAlF6 (0<x<1).
The present invention concerns a neutron detection device equipped with a neutron detection scintillator composed of a colquiriite-type fluoride single crystal, and a silicon photodiode, wherein the single crystal contains only Eu as a rare earth element, and contains 0.80 atom/nm3 or more of 6Li, the Eu content is 0.0025 to 0.05 mol %, and the thickness of the scintillator is large. The silicon photodiode is compact and lightweight. Thus, the neutron detection device is useful as a compact, lightweight neutron detection device, and is preferred for applications, such as a survey meter for use in the determination of whether or not a neutron is present in the environment.
The neutron detection device of the present invention comprises a scintillator having a thickness in excess of 1 mm and a silicon photodiode, the scintillator being composed of a colquiriite-type fluoride single crystal which contains only Eu as a lanthanoid, contains 0.80 atom/nm3 or more of 6Li, and has a Eu content of 0.0025 to 0.05 mol %.
The term “colquiriite” refers to a naturally occurring LiCaAlF6 compound, which has a characteristic crystal structure. The colquiriite type, as referred to herein, embraces a compound having a structure similar to that of colquiriite in which some elements of the compound have been substituted by other elements.
In the present invention, the colquiriite-type fluoride single crystal is preferably exemplified by a crystal having, as a basic structure, a single crystal of a compound represented by the chemical formula MXMYMZF6 (the exemplary crystal will hereinafter be referred to as a colquiriite-type basic crystal).
In the chemical formula, MX is at least one element selected from the group consisting of Li, Na, K, Rb and Cs, but necessarily includes Li. MY is at least one element selected from the group consisting of Ca, Mg, Ba, Sr, Cd and Be. MZ is at least one element selected from the group consisting of Al, Ga and In. MX includes, without fail, Li necessary to detect a neutron. If charge control is to be performed, moreover, MX preferably contains Na.
The colquiriite-type single crystal is a hexagonal crystal belonging to the space group P31c, and can be easily identified by a technique for powder X-ray diffraction.
Of the colquiriite-type basic crystals, single crystals of a compound represented by the chemical formula LiCaAlF6, LiSrAlF6 or LiCa1-xSrxAlF6 (0<x<1) are preferred, because they are easy to produce as large crystals, and obtain high emission intensity when used as scintillators. Of them, LiCaAlF6 is the most preferred, because its effective atomic number is so small that its sensitivity to gamma rays is low.
In the present invention, the effective atomic number is an indicator defined by the following equation:
Effective atomic number=(ΣWiZi4)1/4
where
The 6Li content of the colquiriite-type fluoride single crystal used in the present invention needs to be 0.80 atom/nm3 or more from the viewpoint of obtaining sensitivity to a neutron, the sensitivity required for a neutron detection scintillator. To enhance the sensitivity to a neutron, moreover, it is preferred that the 6Li content be set at 4 atoms/nm3 or more.
The upper limit of the 6Li content is 9 atoms/nm3. The 6Li content in the colquiriite-type fluoride single crystal is theoretically of the order of 9 atoms/nm3 at the highest, and it is impossible to obtain the colquiriite-type fluoride single crystal having a higher 6Li content than this value.
The 6Li content, as used herein, refers to the number of the Li elements contained per nm3 of the colquiriite-type fluoride single crystal used in the present invention. The incident neutrons cause a nuclear reaction with 6Li to produce alpha rays. Thus, the 6Li content influences the sensitivity to neutrons and, the higher the 6Li content, the higher the sensitivity to neutrons becomes.
The 6Li content can be adjusted, as appropriate, either by selecting a suitable composition of the crystal compounds constituting the basic structure of the neutron detection scintillator, or by adjusting the 6Li abundance ratio of LiF or the like used as the Li material. The 6Li abundance ratio, as used herein, refers to the element ratio of 6Li isotope to all Li elements, and its natural abundance ratio is about 7.6%. Examples of methods for adjusting the 6Li abundance ratio are a method which comprises using a general-purpose material with the natural abundance ratio as a starting material, and concentrating the starting material to the desired 6Li abundance ratio for adjustment; and a method which comprises having, ready for use, a concentrated material concentrated beforehand to the desired 6Li abundance ratio or higher, and mixing the concentrated material and the above general-purpose material for adjustment.
The 6Li content (atoms/nm3) can be determined by the following [Equation 1]:
6Li content=A×C×ρ×10−23/M [Equation 1]
where
A is Avogadro's number [6.02×1023],
C is the 6Li abundance ratio [%] in the Li elements,
ρ is the density [g/cm3] of the colquiriite-type fluoride single crystal used in the present invention, and
M is the molecular weight [g/mol].
The colquiriite-type fluoride single crystal used in the present invention is a colorless or slightly colored transparent crystal, and has satisfactory chemical stability. When it is used for a short period under ordinary use conditions, its performance does not deteriorate. Furthermore, its mechanical strength and processability are satisfactory, and it can be easily processed into a desired shape.
The scintillator used in the present invention can be increased in the detection sensitivity for a neutron by having its thickness increased. The thickness of the scintillator, as used herein, refers to the length of the scintillator in a direction perpendicular to a surface of the scintillator bonded to the light receiving surface of the silicon photodiode. The scintillator is preferably in the form of a rectangular parallelepiped or a cube in which the length of the shortest side is more than 1 mm, or in the form of a disk or a cylinder having a length, in a direction perpendicular to the circle, of more than 1 mm. Moreover, a thickness of 1.5 mm or more, 2 mm or more, 4 mm or more, or 10 mm or more is more preferred, because such a thickness can increase the probability of the nuclear reaction between neutrons and 6Li and can further enhance the detection efficiency for neutrons. The increased thickness also increases the probability for the occurrence of the nuclear reaction between neutrons and 6Li, thus producing the advantage that not only a thermal neutron of low energy, but also a neutron of higher energy than a thermalneutron, e.g., an epithermalneutron, can also be detected. As the thickness is increased, however, there is an increase in the area of a portion not bonded to the light receiving surface of the silicon photodiode. Fluorescence leaks from this portion, and the efficiency of concentrating the emitted light on the light receiving surface of the silicon photodiode is diminished. Thus, the upper limit of the thickness is preferably of the order of 200 mm. The conventionally known 6LiF film involves the problem of absorbing alpha rays inside it, and cannot be thickened as is the scintillator of the present invention. The scintillator of the present invention is free from this problem, because alpha rays generated by the nuclear reaction are promptly converted into light upon reaction with the luminescence center elements. Thus, the scintillator of the present invention is very beneficial in that a high neutron detection efficiency is obtained and an epithermal neutron is also detectable.
The relation between the thickness of the scintillator of the present invention and the probability of the nuclear reaction is concretely calculated as follows:
Assume that the scintillator containing 6Li in an amount of the order of 9 atoms/nm3 is irradiated with 0.025 eV of thermal neutrons. In this case, the reaction cross-section of this scintillator for the reaction between 6Li and neutrons is 940 barns. Under these conditions, the probability of neutrons causing a nuclear reaction with 6Li among the neutrons irradiated is calculated at about 60% when the thickness of the scintillator is 1 mm. The probability at a thickness of 1.5 mm is about 70%, the probability at a thickness of 2 mm is about 80%, and the probability at a thickness of 4 mm is about 90%. Generally, the scintillator with the probability of nuclear reaction exceeding 50% is suitable for practical use.
However, if the 6Li content in the scintillator is decreased, or if the object for detection is expanded up to a neutron with high energy, for example, an epithermal neutron of about 1 eV, it is preferred to impart a thickness greater than the above values to the scintillator. If the scintillator of the present invention containing 9 atoms/nm3 of 6Li is assumed to be irradiated with 1 eV of epithermal neutrons, the reaction cross-section of this scintillator for reaction between 6Li and neutrons of 1 eV is 188 barns. Under these conditions, with the thickness of the scintillator being 10 mm, the probability of neutrons causing a nuclear reaction with 6Li among the neutrons irradiated can be calculated at about 70%.
The colquiriite-type fluoride single crystal used in the present invention contains Eu element in the aforementioned colquiriite-type basic crystal. The Eu element is presumed to be present in interstitial site of the colquiriite-type basic crystal, or to be present as replacing some of the elements constituting the crystal, but its exact form of existence is unknown. Since this element is contained, alpha rays generated by the reaction between neutrons and 6Li react with the Eu element, obtaining light emission containing light in a wavelength region of about 370 nm. The silicon photodiode generally has maximum sensitivity to light in a wavelength region of about 900 nm, but has low sensitivity to light in a short wavelength region. Thus, it is expected that the silicon photodiode will face much difficulty in receiving light with a short wavelength of about 370 nm. Nonetheless, with the present invention, when a scintillator comprising a colquiriite-type fluoride single crystal containing Eu is combined with a silicon photodiode, this diode can receive fluorescence emitted by the scintillator. This may be because the intensity of light in a wavelength region of about 370 nm emitted by the scintillator of the present invention is high.
The content of the Eu element in the colquiriite-type fluoride single crystal used in the present invention is 0.0025 mol % or more per mol of the colquiriite-type fluoride single crystal used in the present invention, from the viewpoint of obtaining a sufficient amount of light emission at the time of irradiation with neutrons. Moreover, the content of the Eu element is 0.05 mol % or less, from the points of view that a single crystal is easy to grow and that a neutron with high energy, such as an epithermalneutron, can also be detected. If the content of the Eu element is too high, cloudiness is liable to occur in the single crystal, making crystal growth difficult. Growth of a thick crystal also becomes difficult, making it impossible to produce a scintillator enough thick to be capable of detecting a neutron of high energy.
In the present invention, the content of the Eu element is within the above-mentioned range. Even when the thickness of the scintillator is increased, therefore, the amount of light emitted does not decrease greatly, and variations in the signal strength are suppressed. If the content of the Eu element is increased beyond the above range, the amount of light emission greatly decreases, and the signal strength fluctuates, when the thickness of the scintillator is increased.
That is, in the present invention, the above amount of Eu is used and, at the same time, the thickness of the scintillator is increased, from the viewpoints of increasing the detection efficiency for a thermal neutron and detecting a neutron of high energy. Generally, when a large amount of Eu is present within the scintillator, the distance between the Eu atoms is short. In a thin scintillator, the short distance between the Eu atoms poses no problem. If the scintillator is thick, on the other hand, its performance as a detection device deteriorates owing to the influence of the phenomenon “self-absorption” in which the fluorescence is attenuated.
Concretely, if fluorescence occurs upon the reaction between Eu and alpha rays, at a position within the scintillator which is distant from the silicon photodiode, this fluorescence collides with other Eu element during passage within the scintillator, and is thus attenuated. Hence, at a time when the fluorescence is received by the diode, emission intensity lowers. Fluorescence generated at a position close to the diode, by contrast, arrives at the diode immediately, so that the fluorescence is minimally attenuated, and its emission intensity is high. As noted here, depending on the position of light emission, the intensity of light received by the silicon photodiode greatly differs, and the pulse height values of electrical signals from the silicon photodiode are also greatly different. The differences in the pulse height values of the electrical signals bring about inconveniences such that the range of the pulse height values showing the detection of neutrons must be set to be broad, and that a long time is required until a detection peak is obtained.
The colquiriite-type fluoride single crystal used in the present invention contains only Eu as a lanthanoid, and does not contain transition metals or other rare earth elements. In the present invention, transition metals mean Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn, and other rare earth elements mean Ce, Pr, Nd, Er, Tm, Ho, Dy, Tb, Gd, Sm, Yb, La, Lu, Y, Sc and Pm. The reason why only Eu is contained is that if a luminescence center element other than Eu is further contained, a disadvantage arises such that light emission due to Eu is liable to decrease.
During the production process for the colquiriite-type fluoride single crystal to be described later, segregation of Eu may occur. Even in such a case, an effective segregation coefficient (k) is determined preliminarily and, based on the following equation [Equation 2]:
C
S
=kC
O(1−g)k-1 [Equation 2]
where
The solidification rate, as used herein, is an indicator representing a position in the growth direction of a crystal, and is determined by the ratio of the weight of a solidified portion to the weight of the raw materials as a whole. That is, the position corresponding to the solidification rate of 0 represents the initially crystallized portion of the resulting crystal, and the position for the solidification rate of 0.1 represents the portion crystallized using up to 10 wt. % of the weight of the entire melt of the materials. The Czochralski method normally crystallizes 30 wt. % or less of the molten materials. In a crystal produced by crystallizing 30 wt. % of the molten materials by the Czochralski method, for example, the position for the solidification rate of 0 corresponds to the uppermost portion of the crystal, and the position for the solidification rate of 0.3 corresponds to the lowermost portion of the crystal.
As the effective segregation coefficient, the value described in the literature (e.g., Growth of Ce-doped LiCaAlF6 and LiSrAlF6 single crystals by the Czochralski technique under CF4 atmosphere) may be adopted. Since the effective segregation coefficient fluctuates depending on the growth method, however, it is preferred to use the value determined preliminarily. According to measurements by the present inventors, for example, the effective segregation coefficient of Eu for LiCaAlF6 obtained by the Czochralski method was 0.025.
The content (mol %) of Eu in the actual crystal can be confirmed by a general method for elemental analysis (for example, ICP mass spectrometry or ICP atomic emission spectroscopy).
The method of producing the colquiriite-type fluoride single crystal used in the present invention is not limited, and the crystal can be produced by a publicly known method. Preferably, however, the crystal is produced by the Czochralski method. A colquiriite-type fluoride single crystal excellent in quality, such as transparency, can be produced by adopting the Czochralski method. According to the Czochralski method, moreover, it becomes possible to produce a large crystal of several inches in diameter.
A general method in producing the colquiriite-type fluoride single crystal for use in the present invention by the Czochralski method will be explained based on
In producing the colquiriite-type fluoride single crystal used in the present invention, it is preferred to use EuF3, MXF, MYF2 and MZF3 as the raw materials. The purities of these materials are not limited, but they are preferably 99.99% or higher, respectively. Moreover, it is preferred to use a material mixture formed by mixing these materials beforehand. By using such a material mixture, the purity of the resulting crystal can be increased, and the characteristics such as emission intensity are improved. The material mixture may be used in powdery or particulate form, or may be used after being sintered or melt-solidified beforehand.
As the material for LiF which must be contained in MXF, it is preferred to use a concentrate of 6Li, because this makes it easy to adjust the 6Li content in the colquiriite-type fluoride single crystal. A concentration to be achieved by the concentrating operation is not limited, as far as it is such a concentration as to render the 6Li content of the scintillator 0.8 atom/nm3 or more. The higher the 6Li content in the scintillator, however, the more increase is obtained in the neutron detection efficiency of the grown crystal for use as the neutron detection scintillator. Thus, such a concentration of the concentrated 6Li as to increase the content of 6Li in the scintillator is preferred.
In the above-mentioned material mixture, it is recommendable that MXF, MYF2 and MZF3 be weighed and mixed to attain the MX:MY:MZ=1:1:1 ratio (molar ratio).
EuF3 is blended so as to attain the content in the aforementioned range. Concretely, the weighed value of EuF3 is preferably set to be higher than the targeted content of the Eu element in consideration of the aforementioned segregation. The segregation coefficient used when calculating the contents of the added elements in the resulting crystal from the weighed value varies depending on the growth conditions such as the types of the added elements and the growth speed. Thus, it is desirable to determine the weighed value of EuF3 by investigating the actual concentration by means of elemental analysis or the like for respective crystal preparation conditions.
If material powders highly volatile at high temperatures are used, the material powders may be weighed in larger amounts than the targeted contents, and mixed. Their amounts of volatilization differ depending on crystal growth conditions (temperature, atmosphere, step). Desirably, therefore, the amounts of volatilization should be investigated beforehand, and the amounts blended should be determined.
The above-mentioned raw materials are charged into a crucible 1. The crucible 1, a heater 2, a heat insulator 3, and a movable stage 4 are installed as shown in
Then, a seed crystal 5 is mounted on the front end of an automatic diameter control device 6. A metal having a high melting point, such as platinum, may be used instead of the seed crystal 5. However, it is preferred to use a colquiriite-type fluoride single crystal or a single crystal having a crystal structure similar to that of the colquiriite-type fluoride single crystal, from the viewpoint that the crystallinity of a grown crystal is satisfactory. For example, it is possible to use a LiCaAlF6 single crystal which has been cut, ground and polished in the form of a rectangular parallelepiped of a size of the order of 6 mm×6 mm×30 mm in which the side measuring 30 mm extends along the c-axis direction. The automatic diameter control device 6 is a device for measuring the total weight of the seed crystal 5 and the grown crystal, and adjusting the pulling rate of the seed crystal 5 based on the measured value. By adjusting the pulling rate, the diameter of the grown crystal can be controlled. With the device 6, a load cell for a pulling-up device, which is commercially available for crystal growth by the Czochralski method, can be used.
Then, by using a vacuum evacuator, the interior of a chamber 7 is evacuated to 1.0×10−3 Pa or lower. Then, an inert gas such as high purity argon is introduced into the chamber for gas exchange. The pressure within the chamber after the gas exchange is not limited, but is generally atmospheric pressure. By this gas exchange operation, water adhering to the starting materials or the interior of the chamber can be removed, and the deterioration of the crystal due to such water can be prevented.
To avoid adverse influence due to water which cannot be removed even by the above gas exchange operation, it is preferred to use a solid scavenger such as zinc fluoride, or a gas scavenger such as tetrafluoromethane. If the solid scavenger is used, a method comprising premixing this scavenger into the raw materials is preferred. If the gas scavenger is used, a method involving introducing the scavenger, as a mixture with the above inert gas, into the chamber is preferred.
After the gas exchange operation is performed, the materials are heated by a high frequency coil 8 and the heater 2 until they are melted. The method of heating is not limited, and a resistance heating type carbon heater or the like, for example, may be used, as appropriate, in place of a configuration composed of the high frequency coil 8 and the heater 2.
Then, the molten material melt is brought into contact with the seed crystal 5. The heater 2 is adjusted by the output of the high frequency coil 8 such that a portion of the melt in contact with the seed crystal 5 is brought to a solidification temperature. Then, with the pulling rate being adjusted by the automatic diameter control device 6, the crystal is pulled upward. During crystal growth, the movable stage 4 may be moved upward or downward, as appropriate, in order to adjust the height of the liquid level. The crystal is continuously pulled up, with the output of the high frequency coil being adjusted where appropriate. When the crystal grows to the desired length, the crystal is cut off the liquid surface. The grown crystal is cooled over the course of such a sufficient time as to avoid cracking therein, whereby a colquiriite-type fluoride single crystal for use in the present invention can be obtained.
In the production of the colquiriite-type fluoride single crystal, annealing of the grown crystal may be performed for the purpose of eliminating a crystal defect due to a fluorine vacancy or thermal strain.
The resulting colquiriite-type fluoride single crystal can be easily processed into a desired shape. In processing it, a cutter such as a blade saw or a wire saw, a grinder or an abrasive wheel, which is publicly known, can be used without limitation. By processing and polishing the single crystal into a shape appropriate for a photodetector, it can be used as a scintillator.
The shape of the scintillator comprising the colquiriite-type fluoride single crystal according to the present invention is not limited, but preferably, this scintillator has an optical output surface opposing a silicon photodiode to be described later. In the scintillator, the thickness in the direction perpendicular to the optical output surface needs to exceed 1 mm in order to obtain sufficient neutron detection efficiency. In accordance with the purpose of the neutron detection device, moreover, the thickness of the scintillator may be set at 1.5 mm or more, 2 mm or more, 4 mm or more, or 10 mm or more. The optical output surface has preferably been subjected to optical polishing. By having such an optical output surface, light generated by the scintillator can be efficiently admitted into the silicon photodiode.
The shape of the optical output surface is not limited, and a shape adapted for applications can be appropriately selected and used, such as a quadrilateral shape measuring several millimeters to several hundred millimeters per side, or a circular shape with a diameter of several millimeters to several hundred millimeters. However, the optical output surface of any appropriate shape is preferably smaller than the light receiving surface of the silicon photodiode, because light emission dissipating without reaching the light receiving surface is minimal.
Preferably, a light reflection film comprising aluminum, Teflon (registered trademark) or the like is applied to surfaces of the scintillator which do not oppose the silicon photodiode. By so doing, dissipation of light generated by the scintillator can be prevented.
The colquiriite-type fluoride single crystal used in the present invention, which has been produced in the above-mentioned manner, is combined with a silicon photodiode, whereby the neutron detection device of the present invention is constructed.
That is, light emitted from the neutron detection scintillator of the present invention upon irradiation with neutron radiation (i.e., scintillation light) is converted into an electrical signal by the silicon photodiode, whereby the presence or absence and strength of a neutron can be grasped as the electrical signal.
As the silicon photodiode, any one can be used. From the viewpoint that light from the scintillator can be received with high sensitivity, however, it is preferred to use an APD (avalanche photodiode) having the function of amplifying an electrical signal. As an example, the avalanche photodiode S8664 series produced by Hamamatsu Photonics K.K. can be used.
The optical output surface of the neutron detection scintillator of the present invention is bonded to the light receiving surface of the silicon photodiode with the use of any optical grease or the like, whereby a neutron detection device can be obtained. The light receiving surface of the diode having the scintillator bonded thereto may be covered with a light shield of any material impervious to light, for the purpose of preventing entry of light from the environment. Portions of the scintillator, other than the bonded surface opposing the light receiving surface of the silicon photodiode, may be covered with a reflector composed of aluminum, Teflon (registered trademark), or barium sulfate for increased light concentrating efficiency. Alternatively, the entire detection device may be covered with a material having the functions of both the light shield and the reflector mentioned above. Observation of electrical signals outputted from the silicon photodiode enables the detection of neutrons to be confirmed.
The electrical signal outputted from the silicon photodiode may be inputted to an amplifier, a multichannel pulse height analyzer or the like, and measured by photon counting. Alternatively, the silicon photodiode may be connected to any current measuring device (e.g., picoammeter) to investigate changes in the current so that a change in the current value responsive to a change in the amount of light received can be confirmed. At this time, in order to increase light receiving sensitivity, voltage may be applied, in reverse bias, to the silicon photodiode. In this case, any measuring device capable of applying voltage or current and making measurements simultaneously (for example, KEITHLEY 237 HIGH VOLTAGE SOURCE MEASURE UNIT) may be employed. The value of voltage applied is preferably set according to the performance of the silicon photodiode or the flux of neutrons to be measured. If the avalanche photodiode S8664 series produced by Hamamatsu Photonics K.K. is used, for example, it is particularly preferred to apply a voltage of 300 to 400 V. At the operating voltage set, the relation between the flux of thermal neutrons irradiated and the current value is measured beforehand. By so doing, the neutron detection device can be used as a quantitative one.
Furthermore, the crystal of the present invention is joined to a position-sensitive silicon photodiode, as in a pixel APD or a CCD camera, so as to cover a part or all of the photoelectric surface, whereby a neutron imaging device can be constituted. Electrical signals from the position-sensitive silicon photodiode can be read out by using any interface, and may be controlled by using a control program of a personal computer.
Hereinbelow, the present invention will be described concretely by reference to its Examples, but the present invention is in no way limited by these Examples.
A method for producing the neutron detection device of the present invention, which was used in Example 1, will be described below.
Using the crystal production apparatus by the Czochralski method shown in
First, the respective materials were weighed in the following manner
and they were mixed thoroughly to obtain a material mixture. The material mixture was charged into the crucible 1.
The crucible 1 charged with the material mixture was installed on the movable stage 4, whereafter the heater 2 and the heat insulator 3 were sequentially installed around the crucible 1. Then, a LiCaAlF6 single crystal was cut, ground and polished into the form of a rectangular parallelepiped measuring 6 mm×6 mm×30 mm, with the 30 mm side extending along the c-axis direction, to obtain the seed crystal 5. The seed crystal 5 was mounted on the front end of the automatic diameter control device 6.
The interior of the chamber 6 was evacuated under vacuum to 5.0×10−4 Pa by use of a vacuum evacuation device composed of an oil-sealed rotary vacuum pump and an oil diffusion pump. Then, a tetrafluoromethane-argon mixed gas was introduced into the chamber 7 until the pressure inside the chamber reached atmospheric pressure, to perform gas exchange.
A high frequency current was applied to the high frequency coil 8 to heat the materials by induction heating, thereby melting them. The seed crystal 5 was moved until it was brought into contact with the liquid surface of the material melt. The output of the heater 2 was adjusted such that a portion of the melt in contact with the seed crystal 5 came to a solidification temperature. Then, the crystal was pulled upward at a pull rate automatically adjusted by the automatic diameter control device 6, with a crystal diameter of 55 mm being targeted.
The movable stage 4 was moved, as appropriate, in order to adjust the liquid level to a constant position, and the crystal was continuously pulled up, with the output of the high frequency coil being adjusted where appropriate. When the crystal grew to a length of 60 mm, the crystal was cut off the liquid surface. The crystal was cooled over 48 hours to obtain a Eu-containing LiCaAlF6 single crystal with a diameter of 55 mm and a length of 60 mm.
The resulting crystal was cut by a wire saw equipped with a diamond wire. Then, the cut piece was ground and mirror polished to be processed into the form of a rectangular parallelepiped 10 mm long, 10 mm wide and 2 mm thick. The above crystal after processing was cut out of the portion with a Eu content CS of 0.05 mol % (the portion having a solidification rate g of 0.01 corresponding to the initial stage during single crystal growth) according to the aforementioned [Equation 2], to obtain the scintillator of the present invention. The amount of Eu in the materials, i.e., CO, was 2 mol %, and the value of the effective segregation coefficient k was 0.025. From the aforementioned [Equation 1], the 6Li content in this portion was 8.3 atoms/nm3. The effective atomic number was 15.
As shown in
Then, a test for detection of a thermal neutron was conducted by using the neutron detection device of the present invention. A 252Cf sealed radiation source placed in a 50 mm thick polyethylene container was used as a thermal neutron source. Current-voltage characteristics and pulse height spectra were measured under irradiation with thermal neutrons with no material being inserted between the thermal neutron source and the detection device (hereinafter called “during thermal neutron irradiation”), and under irradiation with thermal neutrons with a shielding plate being inserted between the thermal neutron source and the detection device (hereinafter called “during thermal neutron shielding”). A 1 mm plate of Cd (cadmium) absorbing a thermal neutron was used as the shielding plate.
(Measurement of Current-Voltage Characteristics)
Using the neutron detection device of the present invention, the current-voltage characteristics during thermal neutron irradiation and those during thermal neutron shielding were compared.
The neutron detection device was connected to an ammeter and used. The ammeter used was KEITHLEY 237 HIGH VOLTAGE SOURCE MEASURE UNIT which can read off a current value while applying a voltage. While applying a voltage of 300 to 400 V in reverse bias under a control program on a personal computer, this ammeter measured the current value, and plotted a graph of the current-voltage characteristics.
The aforementioned 252Cf sealed radiation source placed in the polyethylene container was used as a thermal neutron source.
The above results confirmed that thermal neutrons could be detected by the neutron detection device of the present invention based on the simple, easy measurements of the current-voltage characteristics.
(Measurement of Pulse Height Spectrum)
Using the neutron detection device of the present invention, pulse height spectra during thermal neutron irradiation and during thermal neutron shielding were compared.
The aforementioned 252Cf sealed radiation source placed in the polyethylene container was used as a thermal neutron source. The pulse height spectra were measured, with a voltage of 3.2 V being applied in reverse bias.
Electrical signals outputted from the neutron detection device of the present invention are pulsed signals reflecting scintillation light. The pulse heights of the pulses represent the emission intensities of scintillation light. The waveform of the pulses shows a decay curve based on the decay constant of scintillation light. The electrical signals outputted were shaped and amplified by a shaping amplifier, and then entered into a multichannel pulse height analyzer for analysis, to prepare a pulse height spectrum.
The abscissa of the pulse height spectrum represents the pulse height value of the electrical signal, namely, the emission intensity of scintillation light. The ordinate represents the frequency of the electrical signal showing each pulse height value.
A neutron detection device was produced in the same manner as in Example 1, except that the respective materials were weighed in the following manner
and that the resulting crystal was cut out of the portion with a Ce content CS of 0.04 mol % (the portion having a solidification rate g of 0.01 corresponding to the initial stage during single crystal growth) according to the aforementioned [Equation 2]. The amount of Ce in the materials, i.e., CO, was 1 mol %, and the value of the effective segregation coefficient k was 0.04. In the device, a scintillator composed of the single crystal Ce0.04%:LiCaAlF6 was used. The effective atomic number was 15.
Pulse height spectra during thermal neutron irradiation and during thermal neutron shielding were obtained in the same manner as in Example 1, except that the pulse height spectra were measured using the resulting neutron detection device, with a voltage of 310 V being applied in reverse bias.
A neutron detection device was produced in the same manner as in Example 1, except that the respective materials were weighed in the following manner
and that the resulting crystal was cut out of the portion with a Pr content CS of 0.04 mol % (the portion having a solidification rate g of 0.01 corresponding to the initial stage during single crystal growth) according to the aforementioned [Equation 2]. The amount of Pr in the materials, i.e., CO, was 1 mol %, and the value of the effective segregation coefficient k was 0.04. In the device, a scintillator composed of the single crystal Pr0.04%:LiCaAlF6 was used. The effective atomic number was 15.
Pulse height spectra during thermal neutron irradiation and during thermal neutron shielding were obtained in the same manner as in Example 1, except that the pulse height spectra were measured using the resulting neutron detection device, with a voltage of 310 V being applied in reverse bias.
A neutron detection device was produced in the same manner as in Example 1, except that the respective materials were weighed in the following manner
and that the resulting crystal was cut out of the portion with a Ce content CS of 0.5 mol % (the portion having a solidification rate g of 0.01 corresponding to the initial stage during single crystal growth) according to the aforementioned [Equation 2]. The amount of Ce in the materials, i.e., CO, was 0.5 mol %, and the value of the effective segregation coefficient k was 1. In the device, a scintillator composed of the single crystal Ce0.5%:LiYF4 was used. The effective atomic number was 33.
Pulse height spectra during thermal neutron irradiation and during thermal neutron shielding were obtained in the same manner as in Example 1, except that the pulse height spectra were measured using the resulting neutron detection device, with a voltage of 310 V being applied in reverse bias.
In Example 1, the pulse height spectrum during thermal neutron irradiation and the pulse height spectrum during thermal neutron shielding were clearly different (see
In Comparative Examples 1 to 3, on the other hand, no distinct differences were observed between the results during thermal neutron irradiation and during thermal neutron shielding, and the frequencies of the electrical signals were reduced in both cases (see
Based on the foregoing results of the pulse height spectrum measurements as well, the neutron detection device of the present invention was confirmed to be capable of detecting a thermal neutron. It was also confirmed that a colquiriite-type single crystal containing only Eu as a lanthanoid was suitable, but a crystal containing other rare earth element such as Ce or Pr was not suitable, as a scintillator for use in the neutron detection device. The reason may be that the scintillator containing Eu provides high emission intensity of a short wavelength, while the scintillator containing other element involves low emission intensity of a short wavelength.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2011-050731 | Mar 2011 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2012/056009 | 3/8/2012 | WO | 00 | 8/16/2013 |
