Claims
- 1. A method for forming a non-annular Land in a circuit board:
- a. providing a substrate having wires disposed thereon;
- b. providing positions for through holes in the substrate;
- c. forming metal on the substrate over the positions for the through holes said metal also connected to a wire;
- d. drilling through the metal at the desired through hole locations to provide through holes, and to form the non-annular lands in the remaining metal said metal being in contact with the through holes; and
- e. disposing conductive material in said through holes to electrically connect the through hole to the non-annular land,
- to provide non-annular Lands which partially surround said through holes and which electrically connect the wire to the conductive material in the through hole.
- 2. The method of claim 1 wherein the conductive material comprises plated metal.
- 3. The method of claim 1 wherein the conductive material comprises electrically conductive paste.
- 4. The method of claim 1, wherein the land has a length from 0.1 to 2 times (z+t.sub.o -s), wherein z is the minimum distance between the edge of the through hole and the nearest adjacent wire and s is the minimum desired spacing of the conductor lines, and t.sub.o is the tolerance of the etch process or 0.
- 5. The method of claim 1, wherein the width of the wire is less than the width of the through hole and the width of the land ranges from greater than the wire width to less than or equal to the through hole width.
- 6. The method of claim 4, wherein the width of the wire is less than the width of the through hole and the width of the land ranges from greater than the wire width to less than or equal to the through hole width.
- 7. A method for forming a non-annular Land in a circuit board:
- a. providing a substrate having wires disposed thereon;
- b. providing positions for through holes in the substrate;
- c. forming metal on the substrate over the positions for the through holes said metal also connected to a wire;
- d. drilling through the metal at the desired through hole locations to provide through holes, and to form the non-annular lands in the remaining metal said metal being in contact with the through holes; and
- e. disposing conductive material in said through holes to electrically connect the through hole to the non-annular land,
- to provide non-annular Lands which partially surround said through holes and which electrically connect the wire to the conductive material in the through hole, wherein the metal is formed in step c by photolithographic process employing artwork formed by employing a reticule and the length of the land is determined by determining the offset distance of the reticule according to the following formula d.sub.o =z+(r.sub.h -r.sub.I)+t.sub.o -s, wherein z is the minimum desired space between the edge of the through hole and the nearest adjacent wire, t.sub.o is the tolerance of the etch process or 0, r.sub.h is the radius of the through hole, r.sub.I is the radius of the reticule used to form the artwork used to form the Non-annular land, and d.sub.o is the offset distance of the reticule.
Parent Case Info
This is a divisional of application Ser. No. 08/340,508 filed on Nov. 16, 1994, now U.S. Pat. No. 5,539,156.
US Referenced Citations (12)
Foreign Referenced Citations (2)
Number |
Date |
Country |
4-37191 |
Feb 1992 |
JPX |
2242384 |
Oct 1991 |
GBX |
Non-Patent Literature Citations (3)
Entry |
IBM Tech Disclosure vol. 13 No. 1 Jun. 1970, pp. 155-155a by L. F. Miller et al. |
IBM Tech Disclosure vol. 15 No. 1 Jun. 1972 p. 319 by J. R. Canizzaro et al. |
Semiconductor Lithography Principles, Practices, and Materials by Wayne M. Moreau, 1988 Plenum Press, New York, pp. 7-10 and 27. |
Divisions (1)
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Number |
Date |
Country |
Parent |
340508 |
Nov 1994 |
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