Most plasma processes for semiconductor circuit fabrication require the plasma reactor chamber to be maintained at a sub-atmospheric pressure using a vacuum pump coupled to the chamber. Typically, the vacuum pump is operated at a nominal constant rate, while the chamber pressure is adjusted by a butterfly valve coupled between the chamber and the vacuum pump. The butterfly valve has a rotatable disk-shaped flap whose rotational position determines the flow rate to the vacuum pump and therefore controls the chamber pressure. The valve flap typically has an O-ring around its perimeter that seats on the edge of the valve housing whenever the valve is in the closed position. The O-ring is necessary in order to ensure a seal when the valve flap is in the closed position. The O-ring suffers wear when it is in a slightly opened position at which the desired chamber pressure is achieved. Plasma and gases flowing past the O-ring react with the O-ring material and degrade it or remove it. As a result, the valve must be serviced periodically to replace the O-ring, which entails significant maintenance costs and down-time of the reactor.
Another problem is that there is a trade-off between the maximum flow capacity of the valve and its ability to regulate chamber pressure accurately. The resolution with which pressure can be controlled is roughly inversely proportional to the valve diameter. This is because control of the rotational angle of the valve flap is limited to a minimum angular excursion, depending upon the motor or servo employed to rotate the flap. The minimum angular excursion or resolution may be less than 1 degree. For a very small diameter valve flap and opening, this resolution can afford highly accurate or fine control of the chamber pressure. However, for a larger diameter valve flap or opening, movement of the flap through the minimum angular excursion causes a relatively large change in chamber pressure, so that fine control of chamber pressure is not possible. This problem can be overcome by employing a smaller diameter valve flap and opening. However, such an approach limits the rate at which the chamber can be evacuated or cleaned. For example, cleaning the chamber with NF3 gases with a fast “dump” of the cleaning gases and by-products is not possible with a small diameter valve.
What is desired is a pressure-control valve that has a very high maximum flow rate (maximum opening size) but which, despite the large maximum opening size, can control chamber pressure as accurately as a very small valve, and requires no periodic replacement of an O-ring.
A valve system having high maximum gas flow rate and fine control of gas flow rate, includes a valve housing for blocking gas flow through a gas flow path, a large area opening through said housing having a first arcuate side wall and a small area opening through said housing having a second arcuate side wall, and respective large area and small area rotatable valve flaps in said large area and small area openings, respectively, and having arcuate edges congruent with said first and second arcuate side walls, respectively and defining therebetween respective first and second valve gaps. The first and second valve gaps are sufficiently small to limit conductance of a gas through said valve housing up to a predetermined pressure limit for a predetermined minimum gas flow limit, thereby obviating any need for O-rings.
Referring to
The internal surface of the pumping conduit 22 has a shoulder 26 supporting a valve housing 28 extending across the diameter of the pumping conduit 22. The valve housing 28 supports a pair of tandem butterfly valves, namely a large high volume valve 30 and a small fine control valve 32. The high volume valve 30 consists of a circular opening 34 through the valve housing 28 and a rotatable valve flap 36. The valve flap 36 is a flat section of a sphere, and therefore has an arcuate edge 38. The edge 40 of the opening 34 through the valve housing 28 has a similar arcuate shape matching that of the valve flap arcuate edge 38. When the flap 36 is in the closed position (i.e., parallel with the plane of the valve housing 28), the arcuate edges 38, 40 define an arcuate gap having a thickness T. The radius of the arcuate gap is sufficiently small so that there is no straight-line path through the arcuate gap from the internal side of the valve to the external side (i.e., from the chamber 16 to the pump 24). This helps limit the rate of gas escaping through the arcuate gap. Preferably, the arcuate gap thickness T is less than the mean free collision path of the gases or plasma in the chamber 16 within a given pressure range. This pressure range may be 2 mT to 200 mT, in one embodiment. In other words, the gap thickness in that embodiment is sufficiently small to be less than the mean free collision path for chamber pressures up to 200 mT. The gap thickness T may be between about 0.010 and 0.030 inch, or lower, for example, depending upon the intended chamber pressure operating range. Coarse control over chamber pressure is obtained by controlling the rotational position of the high volume valve flap 36, which determines the valve opening size d (
Conductance of the high volume valve 30 is determined by the valve opening size d, which is monotonically related to the angular or rotational position of the valve flap 36 (for angular position range of 0 degree (closed) up to 90 degree (wide open)). The conductance and gas flow rate determines the chamber pressure, and therefore chamber is regulated by controlling the valve opening size d through rotation of the valve flap 36.
The fine control valve 32 consists of a circular opening 44 through the valve housing 28 and a rotatable valve flap 46. The valve flap 46 is a flat section of a sphere, and therefore has an arcuate edge 48. The edge 50 of the opening 44 through the valve housing 28 has a similar arcuate shape matching that of the valve flap arcuate edge 48. When the flap 46 is in the closed position (i.e., parallel with the plane of the valve housing 28, the arcuate edges 48, 50 define an arcuate gap 51 having a thickness t. The radius of the arcuate gap 51 is sufficiently small so that there is no straight-line path through the arcuate gap 51 from the internal side of the valve to the external side (i.e., from the chamber 16 to the pump 24). This helps limit the rate of gas escaping through the arcuate gap 51.
In accordance with another feature that helps prevent gas escaping through the gap 51, the gap thickness t is less than the mean free collision path of the gases or plasma in the chamber 16 within a given pressure range. This pressure range may be 2 mT to 200 mT, in one embodiment. In other words, the gap thickness t in that embodiment is sufficiently small to be less than the mean free collision path for chamber pressures up to 200 mT. The gap thickness may be about 0.010 to 0.030 inch, for example. Fine control over chamber pressure is obtained by controlling the rotational position of the flap 46, which determines the valve opening size. With such a small gap and a circular path through the gap, the rate at which process gases or plasma products escape through the gap is low. This feature obviates the need for any O-ring to seal the gap, a significant advantage.
Conductance through the valve 32 is determined by the valve opening size, which is monotonically related to the angular or rotational position of the valve flap 46 (for angular position range of 0 degree (closed) up to 90 degree (wide open). The parallel sum of the individual conductances of the respective tandem valves 30, 32 and the gas flow rate determine the chamber pressure, and therefore chamber pressure is regulated by controlling the valve opening size of each valve 30, 32 through rotation of the valve flaps 36 and 46. An advantage of the high volume valve 30 is that extremely large chamber evacuation rates can be attained by rotating the flap 36 of the high volume valve 30 to its fully opened angular position (i.e., perpendicular relative to the plane of the valve housing 28). The high volume valve's diameter may be very large (e.g., 9 inches), to accommodate a large chamber evacuation rate required during chamber cleaning operations using a cleaning gas such as NF3 or using depositing gases during film deposition, for example. However, the high volume valve does not provide the most accurate regulation of chamber pressure to a desired pressure value because small angular rotations of its flap 36 produce large changes in the chamber pressure. Accurate control is provided by the fine control valve 32, whose opening diameter may be as small as one inch (for example). In the case of the fine control valve 32, a small angular rotation of its flap 46 produces a relatively small change in chamber pressure, facilitating small, accurate adjustments in chamber pressure. Moreover, the fine control valve flap 46, due to its small diameter, has a relatively small moment of inertia, which permits a motor of modest torque capability to effect very rapid corrections or changes in the chamber pressure, enhancing the fine control capability of the valve 32.
In operation, the high volume valve 30 is set to a rotational position (or opening size d) that establishes a chamber pressure above the desired chamber pressure by a difference that is sufficiently small to be within the ability of the fine control valve 32 to compensate. The chamber pressure is then accurately adjusted to the exact value of the desired pressure by opening the fine control valve 32 until the chamber pressure has decreased to the desired value. Because the fine control valve 32 has such a small opening, the rotational movement of the fine control valve flap 46 effects very small changes in chamber pressure, thereby facilitating accurate adjustment of the chamber pressure.
The small fine control valve 32 and flap 46 is a smaller but identical version of the larger coarse control valve 30 and flap 36, and therefore has the same structure illustrated in
One optional feature is to increase the conductance in the high volume valve 30 by forming flow-enhancing slots 90 in the arcuate surface 40 of the valve opening 34, as illustrated in
The purpose of the slots 90, 91 is to increase the rate at which conductance through the valve grows as the flap is rotated from its closed position. This increase is augmented by increasing the number of slots 90 in the upper housing face and 91 in the bottom housing face.
The surfaces of the valve housing and valve flaps facing the plasma reactor are preferably of a material compatible with plasma processing. For some processes, this material may be aluminum. The opposite side of the valve housing and valve flaps facing the vacuum pump, as well as the shaft, may be formed of other materials (e.g., steel or stainless steel). No O-ring is necessary to seal the valve assembly, a significant advantage.
While the invention has been described in detail by reference to preferred embodiments, it is understood that variations and modifications thereof may be made without departing from the true spirit and scope of the invention.
Number | Name | Date | Kind |
---|---|---|---|
2344138 | Drummond | Mar 1944 | A |
3109100 | Gecewicz | Oct 1963 | A |
3234966 | Klose | Feb 1966 | A |
3298677 | Anderson | Jan 1967 | A |
3576685 | Swann et al. | Apr 1971 | A |
3897524 | Freismuth et al. | Jul 1975 | A |
3907616 | Wiemer | Sep 1975 | A |
4116791 | Zega | Sep 1978 | A |
4294205 | Iiyama et al. | Oct 1981 | A |
4382099 | Legge et al. | May 1983 | A |
4385946 | Finegan et al. | May 1983 | A |
4434036 | Hoerschelmann et al. | Feb 1984 | A |
4465529 | Arima et al. | Aug 1984 | A |
4481229 | Suzuki et al. | Nov 1984 | A |
4500563 | Ellenberger et al. | Feb 1985 | A |
4521441 | Flowers | Jun 1985 | A |
4539217 | Farley | Sep 1985 | A |
4565588 | Seki et al. | Jan 1986 | A |
4698104 | Barker et al. | Oct 1987 | A |
4764394 | Conrad | Aug 1988 | A |
4778561 | Ghanbari | Oct 1988 | A |
4867859 | Harada et al. | Sep 1989 | A |
4871421 | Ogle et al. | Oct 1989 | A |
4892753 | Weng et al. | Jan 1990 | A |
4912065 | Mizuno et al. | Mar 1990 | A |
4937205 | Nakayama et al. | Jun 1990 | A |
4948458 | Ogle | Aug 1990 | A |
5040046 | Chhabra et al. | Aug 1991 | A |
5061838 | Lane et al. | Oct 1991 | A |
5074456 | Degner et al. | Dec 1991 | A |
5106827 | Borden et al. | Apr 1992 | A |
5107201 | Ogle | Apr 1992 | A |
5270250 | Murai et al. | Dec 1993 | A |
5277751 | Ogle | Jan 1994 | A |
5288650 | Sandow | Feb 1994 | A |
5290382 | Zarowin et al. | Mar 1994 | A |
5312778 | Collins et al. | May 1994 | A |
5354381 | Sheng | Oct 1994 | A |
5435881 | Ogle | Jul 1995 | A |
5505780 | Dalvie et al. | Apr 1996 | A |
5514603 | Sato | May 1996 | A |
5520209 | Goins et al. | May 1996 | A |
5542559 | Kawakami et al. | Aug 1996 | A |
5561072 | Saito | Oct 1996 | A |
5569363 | Bayer et al. | Oct 1996 | A |
5572038 | Sheng et al. | Nov 1996 | A |
5587038 | Cecchi et al. | Dec 1996 | A |
5627435 | Jansen et al. | May 1997 | A |
5643838 | Dean et al. | Jul 1997 | A |
5648701 | Hooke et al. | Jul 1997 | A |
5653811 | Chan | Aug 1997 | A |
5654043 | Shao et al. | Aug 1997 | A |
5660895 | Lee et al. | Aug 1997 | A |
5674321 | Pu et al. | Oct 1997 | A |
5683517 | Shan | Nov 1997 | A |
5711812 | Chapek et al. | Jan 1998 | A |
5718798 | Deregibus | Feb 1998 | A |
5770982 | Moore | Jun 1998 | A |
5888413 | Okumura et al. | Mar 1999 | A |
5897752 | Hong et al. | Apr 1999 | A |
5911832 | Denholm et al. | Jun 1999 | A |
5935077 | Ogle | Aug 1999 | A |
5944942 | Ogle | Aug 1999 | A |
5948168 | Shan et al. | Sep 1999 | A |
5985742 | Henley et al. | Nov 1999 | A |
5994207 | Henley et al. | Nov 1999 | A |
5994236 | Ogle | Nov 1999 | A |
5998933 | Shun'ko | Dec 1999 | A |
6000360 | Koshimuzu | Dec 1999 | A |
6013567 | Henley et al. | Jan 2000 | A |
6020592 | Liebert et al. | Feb 2000 | A |
6041735 | Murzin et al. | Mar 2000 | A |
6050218 | Chen et al. | Apr 2000 | A |
6076483 | Shintani et al. | Jun 2000 | A |
6096661 | Ngo et al. | Aug 2000 | A |
6101971 | Denholm et al. | Aug 2000 | A |
6103599 | Henley et al. | Aug 2000 | A |
6132552 | Donohoe et al. | Oct 2000 | A |
6150628 | Smith et al. | Nov 2000 | A |
6153524 | Henley et al. | Nov 2000 | A |
6155090 | Rubenson | Dec 2000 | A |
6164241 | Chen et al. | Dec 2000 | A |
6165376 | Miyake et al. | Dec 2000 | A |
6174450 | Patrick et al. | Jan 2001 | B1 |
6174743 | Pangrle et al. | Jan 2001 | B1 |
6182604 | Goeckner et al. | Feb 2001 | B1 |
6187110 | Henley et al. | Feb 2001 | B1 |
6207005 | Henley et al. | Mar 2001 | B1 |
6237527 | Kellerman et al. | May 2001 | B1 |
6239553 | Barnes et al. | May 2001 | B1 |
6248642 | Donlan et al. | Jun 2001 | B1 |
6265328 | Henley et al. | Jul 2001 | B1 |
6291313 | Henley et al. | Sep 2001 | B1 |
6291939 | Nishida | Sep 2001 | B1 |
6300643 | Fang et al. | Oct 2001 | B1 |
6303519 | Hsiao et al. | Oct 2001 | B1 |
6305316 | DiVergilio et al. | Oct 2001 | B1 |
6335536 | Goeckner et al. | Jan 2002 | B1 |
6339297 | Sugai et al. | Jan 2002 | B1 |
6341574 | Bailey, III et al. | Jan 2002 | B1 |
6348126 | Hanwa et al. | Feb 2002 | B1 |
6367772 | Glogovcsan, Jr. | Apr 2002 | B1 |
6392351 | Shun'ko | May 2002 | B1 |
6395150 | Van Cleemput et al. | May 2002 | B1 |
6403453 | Ono et al. | Jun 2002 | B1 |
6410449 | Hanawa et al. | Jun 2002 | B1 |
6413321 | Kim et al. | Jul 2002 | B1 |
6417078 | Dolan et al. | Jul 2002 | B1 |
6418874 | Cox et al. | Jul 2002 | B1 |
6426015 | Xia et al. | Jul 2002 | B1 |
6433553 | Goeckner et al. | Aug 2002 | B1 |
6453842 | Hanawa et al. | Sep 2002 | B1 |
6468388 | Hanawa et al. | Oct 2002 | B1 |
6494986 | Hanawa et al. | Dec 2002 | B1 |
6511899 | Henley et al. | Jan 2003 | B1 |
6514838 | Chan | Feb 2003 | B2 |
6528391 | Henley et al. | Mar 2003 | B1 |
6551446 | Hanwa et al. | Apr 2003 | B1 |
6559408 | Smith et al. | May 2003 | B2 |
6582999 | Henley et al. | Jun 2003 | B2 |
6593173 | Anc et al. | Jul 2003 | B1 |
6679981 | Pan et al. | Jan 2004 | B1 |
6854709 | Kawai et al. | Feb 2005 | B2 |
20010042827 | Fang et al. | Nov 2001 | A1 |
20020047543 | Sugai et al. | Apr 2002 | A1 |
20030013260 | Gossman et al. | Jan 2003 | A1 |
20030085205 | Lai et al. | May 2003 | A1 |
20030122100 | Baumann | Jul 2003 | A1 |
20040149952 | DePenning et al. | Aug 2004 | A1 |
20050072952 | Alves | Apr 2005 | A1 |
Number | Date | Country |
---|---|---|
0 546 852 | Jun 1993 | EP |
0 836 218 | Apr 1998 | EP |
0 964 074 | Dec 1999 | EP |
1 111 084 | Jun 2001 | EP |
1 158 071 | Nov 2001 | EP |
1 191 121 | Mar 2002 | EP |
59-86214 | May 1984 | JP |
59-218728 | Dec 1984 | JP |
62-120041 | Jun 1987 | JP |
070455542 | Feb 1995 | JP |
2000150908 | May 2000 | JP |
WO 9900832 | Jan 1999 | WO |
WO 0111650 | Feb 2001 | WO |
WO 0225694 | Mar 2002 | WO |
WO 9318201 | Sep 2003 | WO |
Number | Date | Country | |
---|---|---|---|
20060237136 A1 | Oct 2006 | US |