Off substrate kinking of bond wire

Information

  • Patent Grant
  • 9087815
  • Patent Number
    9,087,815
  • Date Filed
    Tuesday, November 12, 2013
    11 years ago
  • Date Issued
    Tuesday, July 21, 2015
    9 years ago
Abstract
An electrically conductive lead is formed using a bonding tool. After bonding the wire to a metal surface and extending a length of the wire beyond the bonding tool, the wire is clamped. Movement of the bonding tool imparts a kink to the wire at a location where the wire is fully separated from any metal element other than the bonding tool. A forming element, e.g., an edge or a blade skirt provided at an exterior surface of the bonding tool can help kink the wire. Tensioning the wire using the bonding tool causes the wire to break and define an end. The lead then extends from the metal surface to the end.
Description
BACKGROUND OF THE INVENTION

Microelectronic devices such as semiconductor chips typically require many input and output connections to other electronic components. The input and output contacts of a semiconductor chip or other comparable device are generally disposed in grid-like patterns that substantially cover a surface of the device (commonly referred to as an “area array”) or in elongated rows which may extend parallel to and adjacent each edge of the device's front surface, or in the center of the front surface. Typically, devices such as chips must be physically mounted on a substrate such as a printed circuit board, and the contacts of the device must be electrically connected to electrically conductive features of the circuit board.


Semiconductor chips are commonly provided in packages that facilitate handling of the chip during manufacture and during mounting of the chip on an external substrate such as a circuit board or other circuit panel. For example, many semiconductor chips are provided in packages suitable for surface mounting. Numerous packages of this general type have been proposed for various applications. Most commonly, such packages include a dielectric element, commonly referred to as a “chip carrier” with terminals formed as plated or etched metallic structures on the dielectric. These terminals typically are connected to the contacts of the chip itself by features such as thin traces extending along the chip carrier itself and by fine leads or wires extending between the contacts of the chip and the terminals or traces. In a surface mounting operation, the package is placed onto a circuit board so that each terminal on the package is aligned with a corresponding contact pad on the circuit board. Solder or other bonding material is provided between the terminals and the contact pads. The package can be permanently bonded in place by heating the assembly so as to melt or “reflow” the solder or otherwise activate the bonding material.


Many packages include solder masses in the form of solder balls, typically about 0.1 mm and about 0.8 mm (5 and 30 mils) in diameter, attached to the terminals of the package. A package having an array of solder balls projecting from its bottom surface is commonly referred to as a ball grid array or “BGA” package. Other packages, referred to as land grid array or “LGA” packages are secured to the substrate by thin layers or lands formed from solder. Packages of this type can be quite compact. Certain packages, commonly referred to as “chip scale packages,” occupy an area of the circuit board equal to, or only slightly larger than, the area of the device incorporated in the package. This is advantageous in that it reduces the overall size of the assembly and permits the use of short interconnections between various devices on the substrate, which in turn limits signal propagation time between devices and thus facilitates operation of the assembly at high speeds.


Packaged semiconductor chips are often provided in “stacked” arrangements, wherein one package is provided, for example, on a circuit board, and another package is mounted on top of the first package. These arrangements can allow a number of different chips to be mounted within a single footprint on a circuit board and can further facilitate high-speed operation by providing a short interconnection between packages. Often, this interconnect distance is only slightly larger than the thickness of the chip itself. For interconnection to be achieved within a stack of chip packages, it is necessary to provide structures for mechanical and electrical connection on both sides of each package (except for the topmost package). This has been done, for example, by providing contact pads or lands on both sides of the substrate to which the chip is mounted, the pads being connected through the substrate by conductive vias or the like. Solder balls or the like have been used to bridge the gap between the contacts on the top of a lower substrate to the contacts on the bottom of the next higher substrate. The solder balls must be higher than the height of the chip in order to connect the contacts. Examples of stacked chip arrangements and interconnect structures are provided in U.S. Patent App. Pub. No. 2010/0232129 (“the '129 Publication”), the disclosure of which is incorporated by reference herein in its entirety.


Microcontact elements in the form of elongated posts or pins may be used to connect microelectronic packages to circuit boards and for other connections in microelectronic packaging. In some instances, microcontacts have been formed by etching a metallic structure including one or more metallic layers to form the microcontacts. The etching process limits the size of the microcontacts. Conventional etching processes typically cannot form microcontacts with a large ratio of height to maximum width, referred to herein as “aspect ratio”. It has been difficult or impossible to form arrays of microcontacts with appreciable height and very small pitch or spacing between adjacent microcontacts. Moreover, the configurations of the microcontacts formed by conventional etching processes are limited.


Despite all of the above-described advances in the art, still further improvements in making and testing microelectronic packages would be desirable.


SUMMARY OF THE INVENTION

An electrically conductive lead can be formed using a bonding tool. In one embodiment, after bonding the wire to a metal surface and extending a length of the wire beyond the bonding tool, the wire is clamped. Movement of the bonding tool can impart a kink to the wire at a location where the wire is fully separated from any metal element other than the bonding tool. A forming element, e.g., an edge or a blade skirt provided at an exterior surface of the bonding tool can help kink the wire. Tensioning the wire using the bonding tool causes the wire to break and define an end. The lead then extends from the metal surface to the end.


In a method according to one example, an electrically conductive lead of a component can be formed by steps comprising: a) using a bonding tool to bond a wire extending beyond a surface of a bonding tool to a metal surface; b) drawing the bonding tool away from the metal surface while allowing the wire to extend farther from the surface of the bonding tool; c) clamping the wire to limit further extension of the wire beyond the surface of the bonding tool; d) moving the bonding tool while the wire remains clamped such that the bonding tool imparts a kink to the wire at a location where the wire is fully separated from any metal element other than the bonding tool; and e) tensioning the wire using the bonding tool such that the wire breaks at the kink to define an end, wherein the lead comprises the wire extending from the metal surface to the end.


Various components can incorporate the leads formed in accordance with the embodiments of the method provided herein.


Various movements of the bonding tool and shapes of conductive leads can be achieved in accordance with the embodiments of the method provided herein.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a sectional view illustrating a microelectronic package such as fabricated in accordance with an embodiment of the invention.



FIG. 2 is a plan view of the microelectronic package of FIG. 1.



FIG. 3A is a sectional view illustrating an interposer such as fabricated in accordance with an embodiment of the invention.



FIG. 3B is a plan view of the interposer of FIG. 3A.



FIG. 4 is a sectional view illustrating a microelectronic assembly such as may incorporate the interposer of FIGS. 3A-3B.



FIG. 5 is a schematic drawing representing movement of a bonding tool in accordance with a method of forming a lead according to an embodiment of the invention.



FIG. 6 illustrates a stage in forming a lead according to an embodiment of the invention.



FIG. 7 illustrates a further stage in forming a lead according to an embodiment of the invention.



FIG. 8A illustrates a further stage in forming a lead according to an embodiment of the invention.



FIG. 8B illustrates a lead formed according to an embodiment of the invention in which the lead has an edge bonded to the metal surface using a stitch bond or wedge bond technique.



FIG. 9A is a sectional view illustrating a stage of kinking a wire in a method according to an embodiment of the invention, and illustrating a particular example of a bonding tool.



FIG. 9B is a corresponding plan view of the bonding tool shown in FIG. 9A.



FIG. 9C is a sectional view illustrating a particular example of a bonding tool.



FIG. 9D is a sectional view illustrating a particular example of a bonding tool.



FIG. 10A is a side view illustrating a lead formed in accordance with an embodiment of the invention.



FIG. 10B is a corresponding plan view of the lead shown in FIG. 10A.



FIG. 10C is a side view illustrating a lead formed in accordance with an embodiment of the invention.



FIG. 10D is a corresponding plan view of the lead shown in FIG. 10C.



FIG. 11 is a plan view illustrating a stage in a method of forming leads according to an embodiment of the invention.



FIG. 12 is a sectional view corresponding to the plan view of FIG. 11.



FIG. 13 is a detailed partial sectional view corresponding to FIG. 12.



FIG. 14 is a detailed partial sectional view illustrating a stage in a fabrication method subsequent to the stage shown in FIGS. 11, 12 and 13 in accordance with such embodiment.



FIG. 15 is a sectional view illustrating a stage in a fabrication method subsequent to the stage shown in FIG. 14.



FIG. 16 is a detailed partial sectional view corresponding to FIG. 15.



FIG. 17 is a schematic drawing representing movement of a bonding tool in accordance with a method of forming a lead according to an embodiment of the invention.



FIG. 18 illustrates a stage in forming a lead according to an embodiment of the invention.



FIG. 19 illustrates a further stage in forming a lead according to an embodiment of the invention.



FIG. 20 illustrates a further stage in forming a lead according to an embodiment of the invention.



FIG. 21 is a schematic sectional view illustrating a system according to an embodiment of the invention.





DETAILED DESCRIPTION

Referring to FIG. 1, the processes described herein can be used to form electrically conductive leads 137 which extend from metal pads 110 at a surface 111 of a component to a second surface 144 above the component surface where the leads can be interconnected with corresponding features of a second component, or in some cases, with pads, vias, or traces of a redistribution layer. A “lead” refers to an electrically conductive element configured to conduct an electrical current between a contact, e.g., an electrically conductive pad, at a surface of a system or component thereof, e.g., a microelectronic element, a substrate, an interposer, or a circuit panel, among others, to a location at a height above a plane in which the surface lies. An end of the lead remote from the contact may be exposed for further connection to another component or system. Alternatively, the lead may function as an interconnect, e.g., a via, between the contact and a level of an assembly higher than the contact.


As used in this disclosure with reference to a component, e.g., an interposer, microelectronic element, circuit panel, substrate, etc., a statement that an electrically conductive element is “at” a surface of a component indicates that, when the component is not assembled with any other element, the electrically conductive element is available for contact with a theoretical point moving in a direction perpendicular to the surface of the component toward the surface of the component from outside the component. Thus, a terminal or other conductive element which is at a surface of a substrate may project from such surface; may be flush with such surface; or may be recessed relative to such surface in a hole or depression in the substrate.


As used herein, a statement that an element is disposed “above a surface” or “overlying a surface” means at a location which is in an orthogonal direction away from the surface. A statement that one element is “above” or “upward from” a reference plane means at a location in an orthogonal direction away from the reference plane. Movement of an element in an “upward” direction means in a direction to a greater height above a reference plane defined by the surface. Conversely, movement of an element in a “downward” direction means in a direction to a lower height above a reference plane defined by the surface. All such statements and meanings of the foregoing terms are not in a gravitational reference, but rather in the frame of reference defined by the element itself.


As seen in FIGS. 1-2, leads 137 can be arranged as an array of wire bonds bonded to surfaces of metal pads or other features at the component surface, the leads extending away from the metal pads at least partly in an upward direction. Such “bond via array” can provide vertical interconnects for a variety of components and microelectronic assemblies. For example, a microelectronic package 10 may have a plurality of leads 137 which are available at an upper surface 144 thereof for interconnection with an additional microelectronic package (not shown) disposed above the surface 144. Each of the leads 137 has an end 134 bonded to a metal surface of a pad 110 or metal feature at a surface 111 of a dielectric element such as substrate 102. The leads 137 can extend in an upwardly direction through a dielectric material such as encapsulation 142, the leads 137 having ends 138 at a surface 144 of the dielectric element. In the package 10, portions of edge surfaces 136 of the leads may or may not be uncovered by a dielectric material used to form the encapsulation 142.


As further seen in FIG. 1, the package 10 can comprise a microelectronic element 121. Specifically, structure 10 can be a microelectronic assembly or package which includes a microelectronic element 121 electrically interconnected with a substrate 102. The microelectronic element 121 may be mounted face up to substrate 102 using an adhesive (not shown), with wire bonds 24 or other conductive structure electrically coupling the microelectronic element 121 with the substrate 102. The microelectronic package can further include terminals 148 at a lower surface 146 of the package which are available for connection with elements of another component at or below the terminals 148. For example, terminals 148 can be bonded to corresponding contacts of a circuit panel or other microelectronic package through conductive masses such as solder balls (not shown), for example.


In another example, as seen in FIGS. 3A-B, the leads 137 can provide interconnects for electrically coupling a first set of contacts 348, e.g., pads, at a first surface 314 of a dielectric element 319 of an interposer 310 with a second set of contacts 358, e.g., pads, at a second surface 354 of the interposer. The dielectric element 319 can be formed by molding a dielectric material onto the leads 137 to form an encapsulation. An electrically conductive redistribution layer can be provided at one or both of the first and second surfaces 314, 354. The redistribution layer can comprise contacts 348, 358 and traces 364 which extend along one or both of the surfaces 314, 354 and which can be provided for redistributing the contacts and can be provided for electrically coupling one or more of the contacts, or one or more of leads 137 or both.



FIG. 4 depicts an example microelectronic assembly 402 in which interposer 310 can be assembled with microelectronic components 412, 452, and may electrically couple the microelectronic elements through elements of a redistribution layer thereon such as traces 364. The interposer can be electrically coupled to a package substrate 425 through elements such as electrically conductive masses, e.g., solder balls attached to contacts 348 at a surface 314 of the interposer 310. In turn, the package substrate 425 can be electrically coupled to a circuit panel 445, such as through conductive masses 428, e.g., solder balls.


In other variations, one or more of the components seen in FIG. 4 may not be present. For example, the assembly may include only one microelectronic element 412 or 452. In some cases, the package substrate 425 may be omitted. In one example, the circuit panel 445 may be electrically coupled to other components in the assembly 402 in ways other than shown in FIG. 4.


Turning now to FIGS. 5 through 8A, a method will be described for forming an electrically conductive lead of a component such as any of the components described above. In this embodiment, the bonding tool can be moved in directions and in a sequential order along segments 120, 130, 140, 150 and 160 of a path such as illustrated in FIG. 5. Referring to FIG. 6, in a first stage of forming the lead, a bonding tool 104 bonds the wire 115 to a metal surface, such as surface 112 of a pad 110 at a surface of a substrate 102 or other component, for example. In one example, the bonding tool 104 can be a capillary type bonding tool in which a wire 115 is fed out through a central opening of the capillary in a direction substantially orthogonal to a surface 122 of the bonding tool.


When bonding the wire, a ball bond 114 may be formed at an end of the wire that is joined to the metal surface 112, which may result from applying energy to a portion of the wire exposed beyond surface 122 as the bonding tool surface 122 is moved or positioned adjacent to the metal surface 112. After applying energy to form the bond to the metal surface 112, the bonding tool draws away from the metal surface 112. Referring to FIG. 6, since one end of the wire 115 is bonded to the metal surface 112, the drawing away of the bonding tool causes the wire to extend farther beyond a surface 122 of the bonding tool. Also, when drawing the bonding tool away from the metal surface, the bonding tool can be moved in an upward direction along path segment 120 away from a reference plane 108 defined by the metal surface 112. In one example, movement along path segment 120 can be in a direction substantially orthogonal to the surface 111 of the component. After moving the bonding tool upwardly along path segment 120, the bonding tool may be moved in a lateral direction along path segment 130, which may be substantially parallel to the surface 111. The bonding tool may then be moved upwardly along path segment 140 as shown in FIG. 5. The above-described motion of the bonding tool can cause a predetermined length of the wire of at least 50 microns to extend between the surface 122 of the bonding tool and the metal surface 112. As commonly understood, as used herein a “micron” means a millionth of a meter, i.e., a micrometer.


At this stage, the shape of the wire 115 and the position of the bonding tool 104 relative to the metal surface 112 can be as shown in FIG. 6. As depicted in FIG. 6, a clamp 125 can engage the wire 115 to prevent or limit further extension of the wire beyond the surface 122 of the bonding tool. In one example, the wire can be clamped at the stage of processing shown in FIG. 6. The clamping of the wire prevents or limits further extension of the wire in a direction beyond the surface 122 of the bonding tool.


Referring again to FIG. 5, after clamping the wire 115, the bonding tool 104 may now be moved along path segment 150 in a different direction than before. This movement of the bonding tool can be used to impart a kink to the wire 115.


In one example, the bonding tool can be moved along path segment in a lateral direction other than the lateral direction of travel along the previous path segment 130. Movement along path segment 150 may also be in a downward direction towards the reference plane 108 defined by the metal surface 112. The path may include any combination of movements in the x-, y-, or z-directions relative to the reference plane. The movements may be a series of straight lines or one or more curves. In examples, some or part of the movements may comprise motion of the surface 122 of the bonding tool in a loop or motion in a spiral. Moreover, the tool and/or the wire may be rotated or twisted during the process to further aid in forming the kink or shaping any portion of the wire.


In one example, the bonding tool may impart a kink 116 to a location of the wire 115 proximate a surface 122 of the tool. As further explained below, the kink manifests as a locally weakened location of the wire where tension applied to the wire in a longitudinal direction of the wire can cause the wire to break at the weakened location. The kink may coincide with a local reduction in the diameter or width of the wire in at least one direction.


As seen in FIG. 7, contact between wire 115 at an edge of the surface 112 of the bonding tool can assist in imparting the kink 116 to the wire. As also seen in FIG. 7, movement of the bonding tool forms the kink in the wire at a location where the wire is fully separated from any metal element other than that provided on the bonding tool. That is, the kink can be formed without crushing the wire between the bonding tool and another metal element that is stationary or moving separately from the bonding tool. In this way, the kink in the wire can be said to be formed “in air”. In the example shown in FIG. 7, the kink is formed while a lowermost surface 117 of the wire is separated from a surface 111 of the component, e.g., substrate 102, or other component at a height “h” therefrom. During movement of the wire which imparts the kink, the wire also remains separated from a surface of a ball bond 114 between the wire and the metal surface 112, that separation distance “s” being depicted in FIG. 7.


In a particular example, when the wire is joined to the metal surface 112 by a ball bond 114, and when forming the kink, the wire can be moved to within 100 microns of a surface of the ball bond 114 that bonds the wire 115 to the metal surface 112, without the wire contacting the ball bond 114. In a further example, when forming the kink, the wire can be moved to within 20 microns of a surface of the ball bond 114 that bonds the wire 115 to the metal surface 112, without the wire contacting the ball bond 114.


In a particular example, the bonding tool can be moved in such way that the surface 122 of the bonding tool, or a portion of the wire 115 projecting below that surface 122, or both the surface 122 and the wire 115 underlying that surface 122, is at a height from the component surface 111 that is lower than a thickness dimension “t” of a ball bond that joins an end of the wire to the metal surface 112.


After forming the kink, the bonding tool then is moved in a way that tensions the wire in a longitudinal direction of the wire. For example, as seen in FIG. 8A, the bonding tool can be moved in an upwardly direction relative to the metal surface 112 and relative to the ball bond 114. The clamp 125 prevents movement of the wire in the longitudinal direction of the wire. Because the wire is weakened at the location of the kink 116, or the geometry of the wire at the kink concentrates stress at the location of the kink, tensioning the wire causes the wire to be severed at the location of the kink 116. As a result, a portion of the wire 115 that forms a lead is severed at the location of the kink 116 from another portion of the wire that extends within the bonding tool 104.


After forming the lead, the lead may be plated with an electrically conductive barrier material to reduce or avoid diffusion between the metal of which the lead is formed and a bond metal, e.g., solder, or gold which may be used in further bonding the lead to another element or other component. In one example, the conductive barrier can be palladium. In other examples, without limitation, the barrier metal can include one or more of nickel, tungsten, titanium, phosphorus, cobalt, and conductive compounds of the same.


Referring to FIG. 8B, in a variation of the method shown and described relative to FIGS. 5 through 8A, the lead shown in FIG. 8B can be formed with a different type of bond between the wire 115 and the metal surface 112. In this case, the wire can be bonded to the metal surface with a stitch bond or wedge bond in which an edge 127 of the wire 115 is bonded to the metal surface 112 and the wire 115 bends upwardly away from the metal surface 112. In this case, the bonded end 134 of the lead seen in FIG. 1 is the portion of the wire that is stitch-bonded to the metal surface. The formation of the stitch bond or wedge bond between the wire and the metal surface 112 can be as further described in U.S. application Ser. No. 13/404,408 filed Feb. 24, 2012, the disclosure of which is incorporated by reference herein. In still another example, the bonding tool can be a wedge-bonding tool rather than a capillary type tool, which can be used to form a wedge bond between the wire and the metal surface.



FIGS. 9A-B depict a particular bonding tool arrangement which can be used in accordance with the above-described method of forming a lead. In this example, the bonding tool 104 can include a forming element 334 at an exterior surface 332 of the bonding tool 104. In the example shown in FIG. 9A, the forming element 334 can be provided at an exterior generally cylindrical or frustoconical wall surface 332 of the bonding tool which surrounds the central opening 124 of the bonding tool through which the wire extends. In this case, the forming element can be disposed at some distance from an entrance 323 of the central opening 124. When the bonding tool is moved after the wire is clamped per the description provided above relative to FIGS. 5 through 7, the forming element can assist in imparting the kink. Movement of the bonding tool forces the wire against the forming element 334.


In a particular embodiment, the forming element 334 can include an edge 338 against which the wire is forced during the movement of the bonding tool. As seen in FIG. 9C, for example, the edge 338 of the forming element exists at a junction of two surfaces which meet with an angle 340 of less than 180 degrees passing through an interior of the forming element. In one example, the edge 342 can be a “knife edge”, i.e., an edge at the junction of two surfaces which meet an interior angle 344 measuring less than 90 degrees. In a further example, the interior angle 344 of the two surfaces which form the edge 342 will be smaller. In some cases, it may be beneficial to limit the angle 344 to 75 degrees or less, and in other cases, it may be beneficial to limit the angle 344 to 60 degrees or less. When the edge 342 is “sharp”, i.e., having a relatively small interior angle between the surfaces of typically less than 75 degrees, the edge 342 may be forced more deeply into the wire 115 during the movement of the bonding tool. However, in such case, the height 339 of the edge 338 above an adjacent outer surface of the 332 of the bonding tool can be limited such that the edge 338 extends into the interior of the wire 115 but without severing the wire during the movement depicted in FIG. 9A. In a particular example, the edge 338 can be located at an axial distance 336 along the exterior surface 332 which is at least 0.25 times a diameter of the wire 115 used to form the lead. In the same example, or in other examples herein, the edge can be located at a height 339 above an adjacent outer surface 332 of the bonding tool which is at least 0.25 times a diameter of the wire 115 used to form the lead.


The forming element 334 can be applied to the exterior surface 332 of a bonding tool to thereby form a part of the bonding tool 104 as used in practicing a method as described herein. For example, a forming element 334 having an annular shape can be provided at an exterior surface 332 of the bonding tool, and can be attached or fitted thereon. In one example, the forming element can be a “blade skirt” which is fitted onto the exterior surface 332. In another example, the forming element may be an integrally formed portion of the exterior surface 332.


In particular examples, ends of the leads formed in this manner can have shapes such as those shown in FIGS. 10A-B. In the example seen in FIGS. 10A-B, the diameter 119 of a lead at an end 135 of the lead remote from the metal surface can be reduced relative to a normal diameter of the lead at other locations along the wire. In this case, the normal diameter of the lead can be the same as, or essentially the same as a normal diameter 118 of the wire which exists at almost all places along the length of the wire except for a location at which the wire is bonded to another element such as metal surface, and except for the end 135 of the lead. In another example, as seen in FIGS. 10C-D, the formed lead has a width 219 that is reduced in one direction relative to a normal diameter 218 of the lead which can be the same as a normal diameter of the wire, as described above. In such case, the width 221 of the lead in a second direction may be the same as, or greater than the normal diameter 218 of the lead at locations between the end 235 and the metal surface 112.


Referring again to FIG. 1, the above described processing may then be repeated to form a plurality of leads 137 each having an end bonded to a metal surface of a metal feature at a surface of a dielectric structure of the component. For example, the process can be repeated to form a plurality of leads 137 having bases 134 bonded to respective metal surfaces 112 (electrically conductive pads) at a surface 111 of a dielectric element 102, e.g., a substrate. In a further stage of processing, a dielectric element 142 can be formed which surrounds individual leads 137 of the plurality of leads, wherein the ends 138 of the leads are uncovered by the dielectric element 142 at a surface 144 of the dielectric element. In one example, the dielectric element 144 can be formed by molding an encapsulant surrounding the individual leads 137 of the plurality of leads. In the structure 10, portions of edge surfaces 136 of the leads may or may not be uncovered by a dielectric material used to form the encapsulation.


In another example, a plurality of leads may be formed on a common metal surface such as shown in FIGS. 11, 12 and 13. In this example, microelectronic element 222 can be mounted to a metal sheet 220 and wires bonded to the metal sheet and formed into leads 237 in an assembly 210 in accordance with the above-described processing. Referring to FIGS. 14-15, a dielectric element 242, e.g., an encapsulation, can be formed surrounding individual leads 237 of the plurality of leads of assembly 210, with ends 238 of the leads being uncovered by the dielectric element 242 at a surface 244 of the dielectric element 242. Referring to FIG. 16, in subsequent processing, the metal element, e.g., a metal sheet 220, can be patterned to form a plurality of metal features 228 at a lower surface 245 of the dielectric element 242. The metal features can include traces 229, vias 231, etc. which electrically couple pads 228 at a surface 245 of the dielectric element, e.g., encapsulation, with contacts 224 at a surface of the microelectronic element 222.


Referring to FIGS. 17 through 20, in a variation of the above-described process of forming a lead, the bonding tool need not be moved in a manner as seen in FIG. 5 along substantially vertical path segments 120, 140 and a horizontal path segment 130. Instead, with the wire bonded to the metal surface 112, the bonding tool can be drawn away from the metal surface 112 along a path segment 230 which is at an angle relative to both the vertical direction 290 and at an angle to the horizontal direction 295. After moving the bonding tool along the path segment 230, the wire then can be clamped to prevent or limit further extension of the wire beyond the surface 122 of the bonding tool.


Thereafter, as further shown in FIGS. 17-18, the bonding tool can be moved in a direction that is both lateral relative to the surface 111 of the component and downward along path segment 240. FIG. 18 further depicts the shape of the wire 115 after the bonding tool 104 has been moved along path segment 230, after clamping the wire, and after the bonding tool has begun moving in the lateral and downward direction along path segment 240. FIG. 19 depicts the shape of the wire 115 after the bonding tool has been moved along path segments 230, 240 to a location at which a kink is applied to the wire, such as described in the foregoing. Referring to FIG. 20, further movement of the wire which causes the wire to be severed at the location of the kink can be the same that described above with reference to FIG. 8A.


The microelectronic packages and microelectronic assemblies described above with reference to FIGS. 1 through 4 and FIG. 16 can be utilized in construction of diverse electronic systems, such as the system 1100 shown in FIG. 21. For example, the system 1100 in accordance with a further embodiment of the invention includes a plurality of modules or components 1106 such as the microelectronic packages and/or microelectronic assemblies as described above in conjunction with other electronic components 1108 and 1110.


In the exemplary system 1100 shown, the system can include a circuit panel, motherboard, or riser panel 1102 such as a flexible printed circuit board, and the circuit panel can include numerous conductors 1104, of which only one is depicted in FIG. 21, interconnecting the modules or components 1106 with one another. Such a circuit panel 1102 can transport signals to and from each of the microelectronic packages and/or microelectronic assemblies included in the system 1100. However, this is merely exemplary; any suitable structure for making electrical connections between the modules or components 1106 can be used.


In a particular embodiment, the system 1100 can also include a processor such as the semiconductor chip 1108, such that each module or component 1106 can be configured to transfer a number N of data bits in parallel in a clock cycle, and the processor can be configured to transfer a number M of data bits in parallel in a clock cycle, M being greater than or equal to N. In the example depicted in FIG. 21, component 1108 can be a semiconductor chip and component 1110 is a display screen, but any other components can be used in the system 1100. Of course, although only two additional components 1108 and 1110 are depicted in FIG. 21 for clarity of illustration, the system 1100 can include any number of such components.


Modules or components 1106 and components 1108 and 1110 can be mounted in a common housing 1101, schematically depicted in broken lines, and can be electrically interconnected with one another as necessary to form the desired circuit. The housing 1101 is depicted as a portable housing of the type usable, for example, in a smartphone, tablet computer, or cellular telephone, and screen 1110 can be exposed at the surface of the housing. In embodiments where a structure 1106 includes a light-sensitive element such as an imaging chip, a lens 1111 or other optical device also can be provided for routing light to the structure. Again, the simplified system shown in FIG. 21 is merely exemplary; other systems, including systems commonly regarded as fixed structures, such as desktop computers, routers and the like can be made using the structures discussed above.


Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims.


It will be appreciated that the various dependent claims and the features set forth therein can be combined in different ways than presented in the initial claims. It will also be appreciated that the features described in connection with individual embodiments may be shared with others of the described embodiments.

Claims
  • 1. A method of forming an electrically conductive lead of a component, comprising: a) using a bonding tool to bond a wire extending beyond a surface of a bonding tool to a metal surface;b) drawing the bonding tool away from the metal surface while allowing the wire to extend farther from the surface of the bonding tool;c) clamping the wire to limit further extension of the wire beyond the surface of the bonding tool;d) moving the bonding tool while the wire remains clamped such that the bonding tool imparts a kink to the wire at a location where the wire is fully separated from any metal element other than the bonding tool; ande) tensioning the wire using the bonding tool such that the wire breaks at the kink to define an end, wherein the lead comprises the wire extending from the metal surface to the end.
  • 2. The method as claimed in claim 1, wherein the drawing of the bonding tool causes a predetermined length of the wire of at least 50 microns to extend between the surface of the bonding tool and the metal surface.
  • 3. The method as claimed in claim 1, wherein the end of the wire has a width in at least one direction which is smaller than a diameter of the wire at a location between the metal surface and the end.
  • 4. The method as claimed in claim 1, wherein the end of the wire has diameter in all directions which is smaller than a diameter of the wire at a location between the metal surface and the end.
  • 5. The method as claimed in claim 1, wherein the bonding of the metal wire comprises forming a ball bond at an end of the wire joined to the metal surface.
  • 6. The method as claimed in claim 5, wherein d) is performed such that the wire is moved to within 100 microns of a surface of the ball bond.
  • 7. The method as claimed in claim 1, wherein a forming element is provided at an exterior surface of the bonding tool, and the moving of the bonding tool imparts the kink by forcing the wire against the forming element.
  • 8. The method as claimed in claim 1, wherein the forming element includes an edge exposed at the exterior surface, the moving of the bonding tool imparts the kink by forcing the wire against the edge.
  • 9. The method as claimed in claim 1, wherein the metal surface is a surface of a metal element, wherein the method includes repeating steps a) through e) one or more times to form a plurality of leads bonded to the metal surface, then forming a dielectric element surrounding individual leads of the plurality of leads, and patterning the metal element to form a plurality of metal features at a surface of the dielectric element, each lead bonded to a feature of the plurality of features.
  • 10. The method as claimed in claim 1, wherein the metal surface is a surface of a metal feature of a plurality of metal features at a surface of dielectric structure of the component, and the method includes repeating steps a) through e) one or more times to form a plurality of leads bonded to metal surfaces of the metal features, then forming a dielectric element surrounding individual leads of the plurality of leads, wherein the ends of the leads are uncovered by the dielectric element at a surface of the dielectric element.
  • 11. The method as claimed in claim 10, wherein the forming of the dielectric element includes molding an encapsulant surrounding the individual leads of the plurality of leads.
  • 12. The method as claimed in claim 1, wherein the drawing of the bonding tool is performed while moving the bonding tool away from the metal surface at least partly in a first lateral direction, and then moving the bonding tool at least partly in a second lateral direction opposite the first lateral direction so as to form a first bend in the wire, the first and second lateral directions being parallel to the metal surface.
  • 13. The method as claimed in claim 1, wherein b) comprises drawing the bonding tool in an upward direction away from a reference plane defined by the metal surface, and d) comprises moving the bonding tool in a downward direction towards the reference plane.
  • 14. The method as claimed in claim 1, wherein b) comprises drawing the bonding tool in an upward direction away from a reference plane defined by the metal surface and drawing the bonding tool in a first lateral direction away from the metal surface, and then moving the bonding tool at least partly in a second lateral direction opposite the first lateral direction so as to form a first bend in the wire.
  • 15. The method as claimed in claim 1, wherein b) comprises drawing the bonding tool in an upward direction away from a reference plane defined by the metal surface, then drawing the bonding tool at least partly in a first lateral direction parallel to the metal surface, and then drawing the bonding tool again in an upward direction away from a reference plane defined by the metal surface, and d) comprises moving the bonding tool in a downward direction towards the reference plane.
  • 16. A method of forming a component assembly having a plurality of electrically conductive leads, comprising: a) using a bonding tool to bond a wire extending beyond a surface of a bonding tool to a metal feature at a surface of a component;b) drawing the bonding tool away from the metal surface while allowing the wire to extend farther from the surface of the bonding tool;c) clamping the wire to limit further extension of the wire beyond the surface of the bonding tool;d) moving the bonding tool while the wire remains clamped such that the bonding tool imparts a kink to the wire at a location where the wire is fully separated from any metal element other than the bonding tool;e) tensioning the wire using the bonding tool such that the wire breaks at the kink to define an end, wherein the lead comprises the wire extending from the metal feature to the end;f) repeating a) through e) a plurality of times to form a plurality of the leads, wherein the end of each lead is at least 50 microns from the metal surface to which it is bonded; andg) forming an encapsulation surrounding individual leads of the plurality of leads, wherein the ends of the leads are not fully covered by the encapsulation at a surface of the encapsulation.
  • 17. The method as claimed in claim 16, wherein a) is performed such that a ball bond forms where the wire is bonded to the metal surface and d) is performed such that the wire is moved to within 20 microns of a surface of the ball bond.
  • 18. The method as claimed in claim 16, wherein the drawing of the bonding tool is performed while moving the bonding tool away from the metal surface at least partly in a first lateral direction, and then moving the bonding tool at least partly in a second lateral direction opposite the first lateral direction so as to form a first bend in the wire, the first and second lateral directions being parallel to the metal surface.
  • 19. The method as claimed in claim 16, wherein b) comprises drawing the bonding tool in an upward direction away from a reference plane defined by the metal surface, and d) comprises moving the bonding tool in a downward direction towards the reference plane.
  • 20. The method as claimed in claim 16, wherein b) comprises drawing the bonding tool in an upward direction away from a reference plane defined by the metal surface and drawing the bonding tool in a first lateral direction away from the metal surface, and then moving the bonding tool at least partly in a second lateral direction opposite the first lateral direction so as to form a first bend in the wire.
US Referenced Citations (417)
Number Name Date Kind
3289452 Koellner Dec 1966 A
3358897 Christensen Dec 1967 A
3623649 Keisling Nov 1971 A
3795037 Luttmer Mar 1974 A
3900153 Beerwerth et al. Aug 1975 A
4327860 Kirshenboin et al. May 1982 A
4415115 James Nov 1983 A
4422568 Elles et al. Dec 1983 A
4437604 Razon et al. Mar 1984 A
4604644 Beckham et al. Aug 1986 A
4695870 Patraw Sep 1987 A
4716049 Patraw Dec 1987 A
4771930 Gillotti et al. Sep 1988 A
4793814 Zifcak et al. Dec 1988 A
4804132 DiFrancesco Feb 1989 A
4902600 Tamagawa et al. Feb 1990 A
4924353 Patraw May 1990 A
4975079 Beaman et al. Dec 1990 A
4976392 Smith et al. Dec 1990 A
4982265 Watanabe et al. Jan 1991 A
4998885 Beaman Mar 1991 A
4999472 Neinast et al. Mar 1991 A
5014111 Tsuda et al. May 1991 A
5067382 Zimmerman et al. Nov 1991 A
5083697 Difrancesco Jan 1992 A
5095187 Gliga Mar 1992 A
5138438 Masayuki et al. Aug 1992 A
5148265 Khandros et al. Sep 1992 A
5148266 Khandros et al. Sep 1992 A
5186381 Kim Feb 1993 A
5189505 Bartelink Feb 1993 A
5196726 Nishiguchi et al. Mar 1993 A
5214308 Nishiguchi et al. May 1993 A
5220489 Barreto et al. Jun 1993 A
5222014 Lin Jun 1993 A
5340771 Rostoker Aug 1994 A
5364004 Davidson Nov 1994 A
5371654 Beaman et al. Dec 1994 A
5397997 Tuckerman et al. Mar 1995 A
5438224 Papageorge et al. Aug 1995 A
5455390 DiStefano et al. Oct 1995 A
5494667 Uchida et al. Feb 1996 A
5495667 Farnworth et al. Mar 1996 A
5518964 DiStefano et al. May 1996 A
5531022 Beaman et al. Jul 1996 A
5536909 DiStefano et al. Jul 1996 A
5541567 Fogel et al. Jul 1996 A
5559054 Adamjee Sep 1996 A
5571428 Nishimura et al. Nov 1996 A
5608265 Kitano et al. Mar 1997 A
5615824 Fjelstad et al. Apr 1997 A
5635846 Beaman et al. Jun 1997 A
5656550 Tsuji et al. Aug 1997 A
5659952 Kovac et al. Aug 1997 A
5679977 Khandros et al. Oct 1997 A
5686353 Yagi et al. Nov 1997 A
5688716 DiStefano et al. Nov 1997 A
5715989 Kee Feb 1998 A
5726493 Yamashita et al. Mar 1998 A
5731709 Pastore et al. Mar 1998 A
5736780 Murayama Apr 1998 A
5787581 DiStefano et al. Aug 1998 A
5801441 DiStefano et al. Sep 1998 A
5802699 Fjelstad et al. Sep 1998 A
5811982 Beaman et al. Sep 1998 A
5821763 Beaman et al. Oct 1998 A
5831836 Long et al. Nov 1998 A
5854507 Miremadi et al. Dec 1998 A
5868300 Babayan Feb 1999 A
5898991 Fogel et al. May 1999 A
5912505 Itoh et al. Jun 1999 A
5953624 Bando et al. Sep 1999 A
5971253 Gilleo et al. Oct 1999 A
5973391 Bischoff et al. Oct 1999 A
5977618 DiStefano et al. Nov 1999 A
5980270 Fjelstad et al. Nov 1999 A
5989936 Smith et al. Nov 1999 A
5994152 Khandros et al. Nov 1999 A
6002168 Bellaar et al. Dec 1999 A
6032359 Carroll Mar 2000 A
6038136 Weber Mar 2000 A
6052287 Palmer et al. Apr 2000 A
6054337 Solberg Apr 2000 A
6054756 DiStefano et al. Apr 2000 A
6077380 Hayes et al. Jun 2000 A
6117694 Smith et al. Sep 2000 A
6121676 Solberg Sep 2000 A
6124546 Hayward et al. Sep 2000 A
6133072 Fjelstad Oct 2000 A
6157080 Tamaki et al. Dec 2000 A
6158647 Chapman et al. Dec 2000 A
6164523 Fauty et al. Dec 2000 A
6177636 Fjelstad Jan 2001 B1
6194250 Melton et al. Feb 2001 B1
6194291 DiStefano et al. Feb 2001 B1
6202297 Faraci et al. Mar 2001 B1
6206273 Beaman et al. Mar 2001 B1
6208024 DiStefano Mar 2001 B1
6211461 Park et al. Apr 2001 B1
6211572 Fjelstad et al. Apr 2001 B1
6215670 Khandros Apr 2001 B1
6218728 Kimura Apr 2001 B1
6225688 Kim et al. May 2001 B1
6258625 Brofman et al. Jul 2001 B1
6260264 Chen et al. Jul 2001 B1
6262482 Shiraishi et al. Jul 2001 B1
6295729 Beaman et al. Oct 2001 B1
6300780 Beaman et al. Oct 2001 B1
6303997 Lee et al. Oct 2001 B1
6313528 Solberg Nov 2001 B1
6316838 Ozawa et al. Nov 2001 B1
6332270 Beaman et al. Dec 2001 B2
6334247 Beaman et al. Jan 2002 B1
6358627 Benenati et al. Mar 2002 B2
6362520 DiStefano Mar 2002 B2
6362525 Rahim Mar 2002 B1
6388333 Taniguchi et al. May 2002 B1
6407448 Chun Jun 2002 B2
6439450 Chapman et al. Aug 2002 B1
6458411 Goossen et al. Oct 2002 B1
6476503 Imamura et al. Nov 2002 B1
6476583 McAndrews Nov 2002 B2
6495914 Sekine et al. Dec 2002 B1
6507104 Ho et al. Jan 2003 B2
6509639 Lin Jan 2003 B1
6514847 Ohsawa et al. Feb 2003 B1
6515355 Jiang et al. Feb 2003 B1
6522018 Tay et al. Feb 2003 B1
6526655 Beaman et al. Mar 2003 B2
6531784 Shim et al. Mar 2003 B1
6545228 Hashimoto Apr 2003 B2
6550666 Chew et al. Apr 2003 B2
6555918 Masuda et al. Apr 2003 B2
6560117 Moon May 2003 B2
6573458 Matsubara et al. Jun 2003 B1
6578754 Tung Jun 2003 B1
6581283 Sugiura et al. Jun 2003 B2
6624653 Cram Sep 2003 B1
6630730 Grigg Oct 2003 B2
6647310 Yi et al. Nov 2003 B1
6684007 Yoshimura et al. Jan 2004 B2
6687988 Sugiura et al. Feb 2004 B1
6699730 Kim et al. Mar 2004 B2
6708403 Beaman et al. Mar 2004 B2
6730544 Yang May 2004 B1
6734542 Nakatani et al. May 2004 B2
6746894 Fee et al. Jun 2004 B2
6762078 Shin et al. Jul 2004 B2
6765287 Lin Jul 2004 B1
6774467 Horiuchi et al. Aug 2004 B2
6774473 Shen Aug 2004 B1
6774494 Arakawa Aug 2004 B2
6777787 Shibata Aug 2004 B2
6790757 Chittipeddi et al. Sep 2004 B1
6815257 Yoon et al. Nov 2004 B2
6828668 Smith et al. Dec 2004 B2
6844619 Tago Jan 2005 B2
6856235 Fjelstad Feb 2005 B2
6867499 Tabrizi Mar 2005 B1
6900530 Tsai May 2005 B1
6902869 Appelt et al. Jun 2005 B2
6930256 Huemoeller et al. Aug 2005 B1
6933608 Fujisawa Aug 2005 B2
6946380 Takahashi Sep 2005 B2
6962282 Manansala Nov 2005 B2
6962864 Jeng et al. Nov 2005 B1
6979599 Silverbrook Dec 2005 B2
6987032 Fan et al. Jan 2006 B1
7009297 Chiang et al. Mar 2006 B1
7045884 Standing May 2006 B2
7051915 Mutaguchi May 2006 B2
7061079 Weng et al. Jun 2006 B2
7067911 Lin et al. Jun 2006 B1
7119427 Kim Oct 2006 B2
7170185 Hogerton et al. Jan 2007 B1
7176506 Beroz et al. Feb 2007 B2
7176559 Ho et al. Feb 2007 B2
7185426 Hiner et al. Mar 2007 B1
7190061 Lee Mar 2007 B2
7215033 Lee et al. May 2007 B2
7225538 Eldridge et al. Jun 2007 B2
7227095 Roberts et al. Jun 2007 B2
7229906 Babinetz et al. Jun 2007 B2
7233057 Hussa Jun 2007 B2
7242081 Lee Jul 2007 B1
7262124 Fujisawa Aug 2007 B2
7294928 Bang et al. Nov 2007 B2
7323767 James et al. Jan 2008 B2
7365416 Kawabata et al. Apr 2008 B2
7371676 Hembree May 2008 B2
7372151 Fan et al. May 2008 B1
7391105 Yeom Jun 2008 B2
7391121 Otremba Jun 2008 B2
7416107 Chapman et al. Aug 2008 B2
7456091 Kuraya et al. Nov 2008 B2
7476608 Craig et al. Jan 2009 B2
7476962 Kim Jan 2009 B2
7485562 Chua et al. Feb 2009 B2
7495342 Beaman et al. Feb 2009 B2
7517733 Camacho et al. Apr 2009 B2
7538565 Beaman et al. May 2009 B1
7550836 Chou et al. Jun 2009 B2
7576439 Craig et al. Aug 2009 B2
7578422 Lange et al. Aug 2009 B2
7621436 Mii et al. Nov 2009 B2
7633765 Scanlan et al. Dec 2009 B1
7642133 Wu et al. Jan 2010 B2
7646102 Boon Jan 2010 B2
7671457 Hiner et al. Mar 2010 B1
7671459 Corisis et al. Mar 2010 B2
7675152 Gerber et al. Mar 2010 B2
7677429 Chapman et al. Mar 2010 B2
7682962 Hembree Mar 2010 B2
7728443 Hembree Jun 2010 B2
7737545 Fjelstad et al. Jun 2010 B2
7750483 Lin et al. Jul 2010 B1
7757385 Hembree Jul 2010 B2
7777351 Berry et al. Aug 2010 B1
7780064 Wong et al. Aug 2010 B2
7795717 Goller Sep 2010 B2
7808093 Kagaya et al. Oct 2010 B2
7842541 Rusli et al. Nov 2010 B1
7850087 Hwang et al. Dec 2010 B2
7855462 Boon et al. Dec 2010 B2
7880290 Park Feb 2011 B2
7892889 Howard et al. Feb 2011 B2
7919846 Hembree Apr 2011 B2
7932170 Huemoeller et al. Apr 2011 B1
7934313 Lin et al. May 2011 B1
7934634 Mii et al. May 2011 B2
7964956 Bet-Shliemoun Jun 2011 B1
7967062 Campbell et al. Jun 2011 B2
7977597 Roberts et al. Jul 2011 B2
8012797 Shen et al. Sep 2011 B2
8020290 Sheats Sep 2011 B2
8039970 Yamamori et al. Oct 2011 B2
8071470 Khor et al. Dec 2011 B2
8084867 Tang et al. Dec 2011 B2
8092734 Jiang et al. Jan 2012 B2
8093697 Haba et al. Jan 2012 B2
8213184 Knickerbocker Jul 2012 B2
8217502 Ko Jul 2012 B2
8232141 Choi et al. Jul 2012 B2
8264091 Cho et al. Sep 2012 B2
8304900 Jang et al. Nov 2012 B2
8372741 Co et al. Feb 2013 B1
8772152 Co et al. Jul 2014 B2
8940630 Damberg et al. Jan 2015 B2
20010002607 Sugiura et al. Jun 2001 A1
20010007370 Distefano Jul 2001 A1
20010020545 Eldridge et al. Sep 2001 A1
20010021541 Akram et al. Sep 2001 A1
20010023534 Tamai et al. Sep 2001 A1
20010028114 Hosomi Oct 2001 A1
20020014004 Beaman et al. Feb 2002 A1
20020023942 Terakado et al. Feb 2002 A1
20020066952 Taniguchi et al. Jun 2002 A1
20020117330 Eldridge et al. Aug 2002 A1
20020125571 Corisis et al. Sep 2002 A1
20020153602 Tay et al. Oct 2002 A1
20020164838 Moon et al. Nov 2002 A1
20020185735 Sakurai et al. Dec 2002 A1
20030006494 Lee et al. Jan 2003 A1
20030048108 Beaman et al. Mar 2003 A1
20030057544 Nathan et al. Mar 2003 A1
20030094700 Aiba et al. May 2003 A1
20030106213 Beaman et al. Jun 2003 A1
20030124767 Lee et al. Jul 2003 A1
20030162378 Mikami Aug 2003 A1
20030164540 Lee et al. Sep 2003 A1
20040026480 Imai et al. Feb 2004 A1
20040036164 Koike et al. Feb 2004 A1
20040038447 Corisis et al. Feb 2004 A1
20040075164 Pu et al. Apr 2004 A1
20040090756 Ho et al. May 2004 A1
20040110319 Fukutomi et al. Jun 2004 A1
20040119152 Karnezos et al. Jun 2004 A1
20040124518 Karnezos Jul 2004 A1
20040148773 Beaman et al. Aug 2004 A1
20040152292 Babinetz et al. Aug 2004 A1
20040160751 Inagaki et al. Aug 2004 A1
20040164128 Mii Aug 2004 A1
20040188499 Nosaka Sep 2004 A1
20040262734 Yoo Dec 2004 A1
20050035440 Mohammed Feb 2005 A1
20050062492 Beaman et al. Mar 2005 A1
20050082664 Funaba et al. Apr 2005 A1
20050092815 Mii May 2005 A1
20050095835 Humpston et al. May 2005 A1
20050116326 Haba et al. Jun 2005 A1
20050121764 Mallik et al. Jun 2005 A1
20050133916 Karnezos Jun 2005 A1
20050133932 Pohl et al. Jun 2005 A1
20050140265 Hirakata Jun 2005 A1
20050151235 Yokoi Jul 2005 A1
20050151238 Yamunan Jul 2005 A1
20050173805 Damberg et al. Aug 2005 A1
20050173807 Zhu et al. Aug 2005 A1
20050181544 Haba et al. Aug 2005 A1
20050181655 Haba et al. Aug 2005 A1
20050212109 Cherukuri et al. Sep 2005 A1
20050253213 Jiang et al. Nov 2005 A1
20050266672 Jeng et al. Dec 2005 A1
20050285246 Haba et al. Dec 2005 A1
20060118641 Hwang et al. Jun 2006 A1
20060166397 Lau et al. Jul 2006 A1
20060175383 Mii et al. Aug 2006 A1
20060197220 Beer Sep 2006 A1
20060216863 Arakawa Sep 2006 A1
20060255449 Lee et al. Nov 2006 A1
20060278682 Lange et al. Dec 2006 A1
20070015353 Craig et al. Jan 2007 A1
20070148822 Haba et al. Jun 2007 A1
20070181989 Corisis et al. Aug 2007 A1
20070190747 Humpston et al. Aug 2007 A1
20070231959 Seidel et al. Oct 2007 A1
20070235850 Gerber et al. Oct 2007 A1
20070246513 Tei et al. Oct 2007 A1
20070271781 Beaman et al. Nov 2007 A9
20070290325 Wu et al. Dec 2007 A1
20080017968 Choi et al. Jan 2008 A1
20080032519 Murata Feb 2008 A1
20080047741 Beaman et al. Feb 2008 A1
20080048309 Corisis et al. Feb 2008 A1
20080048690 Beaman et al. Feb 2008 A1
20080048691 Beaman et al. Feb 2008 A1
20080048697 Beaman et al. Feb 2008 A1
20080054434 Kim Mar 2008 A1
20080073769 Wu et al. Mar 2008 A1
20080073771 Seo et al. Mar 2008 A1
20080076208 Wu et al. Mar 2008 A1
20080100316 Beaman et al. May 2008 A1
20080100317 Beaman et al. May 2008 A1
20080100318 Beaman et al. May 2008 A1
20080100324 Beaman et al. May 2008 A1
20080106281 Beaman et al. May 2008 A1
20080106282 Beaman et al. May 2008 A1
20080106283 Beaman et al. May 2008 A1
20080106284 Beaman et al. May 2008 A1
20080106285 Beaman et al. May 2008 A1
20080106291 Beaman et al. May 2008 A1
20080106872 Beaman et al. May 2008 A1
20080111568 Beaman et al. May 2008 A1
20080111569 Beaman et al. May 2008 A1
20080111570 Beaman et al. May 2008 A1
20080112144 Beaman et al. May 2008 A1
20080112145 Beaman et al. May 2008 A1
20080112146 Beaman et al. May 2008 A1
20080112147 Beaman et al. May 2008 A1
20080112148 Beaman et al. May 2008 A1
20080112149 Beaman et al. May 2008 A1
20080116912 Beaman et al. May 2008 A1
20080116913 Beaman et al. May 2008 A1
20080116914 Beaman et al. May 2008 A1
20080116915 Beaman et al. May 2008 A1
20080116916 Beaman et al. May 2008 A1
20080117611 Beaman et al. May 2008 A1
20080117612 Beaman et al. May 2008 A1
20080117613 Beaman et al. May 2008 A1
20080121879 Beaman et al. May 2008 A1
20080123310 Beaman et al. May 2008 A1
20080129319 Beaman et al. Jun 2008 A1
20080129320 Beaman et al. Jun 2008 A1
20080132094 Beaman et al. Jun 2008 A1
20080156518 Honer et al. Jul 2008 A1
20080164595 Wu et al. Jul 2008 A1
20080197510 Mii et al. Aug 2008 A1
20080211084 Chow et al. Sep 2008 A1
20080284045 Gerber et al. Nov 2008 A1
20080303153 Oi et al. Dec 2008 A1
20080308609 Felber Dec 2008 A1
20080315385 Gerber et al. Dec 2008 A1
20090014876 Youn et al. Jan 2009 A1
20090026609 Masuda Jan 2009 A1
20090045497 Kagaya et al. Feb 2009 A1
20090050994 Ishihara et al. Feb 2009 A1
20090085185 Byun et al. Apr 2009 A1
20090085205 Sugizaki Apr 2009 A1
20090091009 Corisis et al. Apr 2009 A1
20090102063 Lee et al. Apr 2009 A1
20090104736 Haba et al. Apr 2009 A1
20090127686 Yang et al. May 2009 A1
20090128176 Beaman et al. May 2009 A1
20090160065 Haba et al. Jun 2009 A1
20090189288 Beaman et al. Jul 2009 A1
20090206461 Yoon Aug 2009 A1
20090212442 Chow et al. Aug 2009 A1
20090236700 Moriya Sep 2009 A1
20090236753 Moon et al. Sep 2009 A1
20090261466 Pagaila et al. Oct 2009 A1
20090315579 Beaman et al. Dec 2009 A1
20100007009 Chang et al. Jan 2010 A1
20100007026 Shikano Jan 2010 A1
20100025835 Oh et al. Feb 2010 A1
20100052135 Shim et al. Mar 2010 A1
20100065963 Eldridge et al. Mar 2010 A1
20100078789 Choi et al. Apr 2010 A1
20100078795 Dekker et al. Apr 2010 A1
20100087035 Yoo et al. Apr 2010 A1
20100090330 Nakazato Apr 2010 A1
20100109138 Cho May 2010 A1
20100117212 Corisis et al. May 2010 A1
20100133675 Yu et al. Jun 2010 A1
20100224975 Shin et al. Sep 2010 A1
20100232129 Haba et al. Sep 2010 A1
20100237471 Pagaila et al. Sep 2010 A1
20100314748 Hsu et al. Dec 2010 A1
20100327419 Muthukumar et al. Dec 2010 A1
20110068453 Cho et al. Mar 2011 A1
20110115081 Osumi May 2011 A1
20110140259 Cho et al. Jun 2011 A1
20110147911 Kohl et al. Jun 2011 A1
20110241193 Ding et al. Oct 2011 A1
20110272449 Pirkle et al. Nov 2011 A1
20120043655 Khor et al. Feb 2012 A1
20120086130 Sasaki et al. Apr 2012 A1
20120119380 Haba May 2012 A1
Foreign Referenced Citations (51)
Number Date Country
102324418 Jan 2012 CN
920058 Jun 1999 EP
2234158 Sep 2010 EP
61125062 Jun 1986 JP
62-226307 Oct 1987 JP
1012769 Jan 1989 JP
64-71162 Mar 1989 JP
06268015 Sep 1994 JP
07-122787 May 1995 JP
11-074295 Mar 1999 JP
11135663 May 1999 JP
11251350 Sep 1999 JP
2001196407 Jul 2001 JP
2002289769 Oct 2002 JP
2003122611 Apr 2003 JP
2003-174124 Jun 2003 JP
2003307897 Oct 2003 JP
2004281514 Oct 2004 JP
2004327856 Nov 2004 JP
2004343030 Dec 2004 JP
2005011874 Jan 2005 JP
2003377641 Jun 2005 JP
2005142378 Jun 2005 JP
2003426392 Jul 2005 JP
2005183880 Jul 2005 JP
2005203497 Jul 2005 JP
2005302765 Oct 2005 JP
2007123595 May 2007 JP
2007287922 Nov 2007 JP
2008251794 Oct 2008 JP
2009004650 Jan 2009 JP
2009260132 Nov 2009 JP
2010103129 May 2010 JP
2010206007 Sep 2010 JP
100265563 Sep 2000 KR
2001-0094894 Nov 2001 KR
20020058216 Jul 2002 KR
10-0393102 Jul 2003 KR
20060064291 Jun 2006 KR
20080020069 Mar 2008 KR
100865125 Oct 2008 KR
20080094251 Oct 2008 KR
100886100 Feb 2009 KR
20090033605 Apr 2009 KR
20090123680 Dec 2009 KR
20100033012 Mar 2010 KR
20100062315 Jun 2010 KR
101011863 Jan 2011 KR
0213256 Feb 2002 WO
2006050691 May 2006 WO
2008065896 Jun 2008 WO
Non-Patent Literature Citations (31)
Entry
“EE Times Asia” [online]. [Retrieved Aug. 5, 2010]. Retrieved from internet. <http://www.eetasia.com/ART—8800428222—480300—nt—dec52276.HTM>, 4 pages.
“Wafer Level Stack—WDoD”, [online]. [Retrieved Aug. 5, 2010]. Retrieved from the internet. <http://www.3d-plus.com/techno-wafer-level-stack-wdod.php>, 2 pages.
Bang, U.S. Appl. No. 10/656,534, filed Sep. 5, 2003.
Extended European Search Report for Application No. EP13162975 dated Sep. 5, 2013.
International Search Report and Written Opinion for Application No. PCT/US2011/044346 dated May 11, 2012.
International Search Report and Written Opinion for Application No. PCT/US2012/060402 dated Apr. 2, 2013.
International Search Report and Written Opinion for Application No. PCT/US2013/026126 dated Jul. 25, 2013.
International Search Report and Written Opinion for Application No. PCT/US2013/041981 dated Nov. 13, 2013.
International Search Report and Written Opinion for Application No. PCT/US2013/052883 dated Oct. 21, 2013.
International Search Report and Written Opinion for Application No. PCT/US2013/053437 dated Nov. 25, 2013.
International Search Report and Written Opinion for PCT/US2011/060551 dated Apr. 18, 2012.
International Search Report and Written Opinion PCT/US2011/044342 dated May 7, 2012.
International Search Report Application No. PCT/US2011/024143, dated Sep. 14, 2011.
International Search Report, PCT/US2005/039716, Apr. 5, 2006.
Japanese Office Action for Application No. 2013-509325 dated Oct. 18, 2013.
Jin, Yonggang et al., “STM 3D-IC Package and 3D eWLB Development,” STMicroelectronics Singapore/STMicroelectronics France May 21, 2010.
Kim et al., “Application of Through Mold Via (TMV) as PoP base package”, 6 pages (2008).
Kim, et al., Application of Through Mold Via (TMV) as PoP base package, ECTC, 2008.
Korean Office Action for Application No. 10-2011-0041843 dated Jun. 20, 2011.
Korean Search Report KR10-2011-0041843 dated Feb. 24, 2011.
Meiser S, “Klein und Komplex”, Elektronik, IRL Press Limited, DE, vol. 41, No. 1, Jan. 7, 1992, pp. 72-77, XP000277326. (International Search Report for Application No. PCT/US2012/060402 dated Feb. 21, 2013 provides concise statement of relevance.).
Neo-Manhattan Technology, A Novel HDI Manufacturing Process, “High-Density Interconnects for Advanced Flex Substrates & 3-D Package Stacking,” IPC Flex & Chips Symposium, Tempe, AZ, Feb. 11-12, 2003.
North Corporation, “Processed Intra-layer Interconnection Material for PWBs [Etched Copper Bump with Copper Foil],” NMBITM, Version 2001.6.
Office Action from U.S. Appl. No. 12/769,930 mailed May 5, 2011.
Partial International Search Report for Application No. PCT/US2012/060402 dated Feb. 21, 2013.
Partial International Search Report for Application No. PCT/US2013/026126 dated Jun. 17, 2013.
Partial International Search Report from Invitation to Pay Additional Fees for Application No. PCT/US2012/028738 dated Jun. 6, 2012.
Redistributed Chip Package (RCP) Technology, Freescale Semiconductor, 2005, 6 pages.
Search Report from Korean Patent Applicatin No. 10-2010-0113271 dated Jan. 12, 2011.
Yoon, PhD, Seung Wook, “Next Generation Wafer Level Packaging Solution for 3D integration,” May 2010, STATS ChipPAC Ltd.
International Search Report and Written Opinion for Application No. PCT/US20141064960 dated Mar. 17, 2015.
Related Publications (1)
Number Date Country
20150129646 A1 May 2015 US