In applicants' experience, in photolithographic systems and methods for imaging of substrates (e.g. in the creation of semiconductor wafers), there is a general need for high throughputs, while retaining high imaging resolution, particularly as wafer sizes get larger. To applicants' knowledge, the current state of the art essentially comprises imaging a single reticle to a substrate with an illumination field size of 26×5 mm. As wafer sizes get larger (e.g. with wafer diameters on the order of 450 mm), the ability to improve throughput (e.g. via system architecture, scanning and/or imaging techniques) is an important objective.
In concurrently filed applications of the assignee of the present invention, new and useful scanning and system architectures are provided, designed to (a) increase the width of the field that is scanned and imaged to a substrate, and (b) provide system architecture that images a pair of reticles to a single imaging location, and when combined with the new scanning concept, is designed to improve throughput. The present invention further develops those concepts, by providing a new and useful optical imaging system and method that provides additional versatility to the system architecture concept, and when used with the new scanning concept, is designed to further improve throughput in a system and method that images more than one reticle to a single imaging location.
More specifically, in the new scanning concept, (referred to by applicants as the “X-scan concept”) disclosed in concurrently filed application Ser. No. ______, entitled “Apparatus for Scanning Sites on a Wafer Along a Short Dimension of the Sites” (attorney reference 11269.151), which is assigned to the assignee of the present invention, and is incorporated by reference herein, which application claims priority on provisional applications Ser. No. 61/060,411, filed Jun. 10, 2008 (“System Architecture For Achieving Higher Scanner Throughput”), 61/078,251, filed Jul. 3, 2008 (“High NA Catadioptric Projection Optics For Imaging Two Reticles Onto One Wafer”) and 61/078,254, filed Jul. 3, 2008 (“X-Scanning Exposure System With Continuous Exposure”), all of which are incorporated by reference herein, a reticle and substrate are effectively rotated 90 degrees, to enable an illumination field size of 33 mm (width)×5 mm to be scanned and imaged to a substrate. In other words, the X-scan concept provides scanning of a reticle in what those in the art would refer to as the X direction, which has a larger width (and shorter length) than the Y direction which is a known scanning direction. That new scanning concept, when used with system architecture that is disclosed in concurrently filed U.S. application Ser. No. ______, entitled “Exposure Apparatus that utilizes Multiple Masks” (Attorney file number 11269.156), which is also assigned to the assignee of the present invention, and incorporated by reference herein, and which claims priority to U.S. provisional applications 61/060,411, 61/078,251 and 61/078,254 enables imaging a pair of reticles to a single imaging location, in a manner designed to enable higher throughput in the imaging of substrates.
The present invention is directed to an optical imaging system and method that further improves the versatility of an imaging optical system and method by which a plurality of reticles are imaged to a single imaging location, and when used with the new X-Scan scanning concept of concurrently filed U.S. application Ser. No. ______ (“Apparatus for Scanning Sites on a Wafer Along a Short Dimension of the Sites”, attorney reference 11269.151), and the system architecture concept of concurrently filed U.S. application Ser. No. ______ (“Exposure Apparatus that utilizes Multiple Masks”, Attorney file number 11269.156), provides still additional improvements in versatility and throughput, in the manner in which reticle scanning and imaging to a single imaging location can be effected.
More specifically, the present invention provides a catadioptric imaging optical system and method, which is designed to image up to 4 reticles to a single imaging location (e.g. a substrate), in a manner that (a) provides versatility (in terms of the manner in which the 4 reticles can be imaged to the single imaging location, (b) effectively enables substantially “continuous” scanning/imaging (in the sense that it is designed to eliminate downtime in the scanning/imaging of a number of up to four reticles to a single imaging location), (c) further increases throughput (particularly when used with the X-Scan concept, with relatively high resolution (e.g. a numerical aperture, NA, of 1.35 or more), and (d) which is designed to further improve the manner in which larger substrates can be imaged (e.g. to produce wafers with diameters on the order of 450 mm).
The present invention provides an imaging optical system comprising up to four reticles, and a catadioptric imaging optics system configured to image a selected one or a plurality of the four reticles to a single imaging location. In the practice of the method of the present invention, up to 4 of the reticles are imaged to the single imaging location via the catadioptric imaging optics system.
Preferably, four reticles are grouped into two pairs of reticles, and the catadioptric imaging optics system is configured to image a selected one of each of the two pairs of reticles to the single imaging location. Also, the catadioptric imaging optics system comprises a pair of switching mirrors, each of which is associated with one of the two pairs of reticles. Each of the switching mirrors has a pair of orientations, and when a switching mirror is in one of the pair of orientations, it is oriented to image one of its associated pair of reticles to the single imaging location.
In accordance with the X-Scan concept, each of the reticles is oriented to be scanned in a manner that enables image fields 33 mm in width to be imaged from the reticle to the single imaging location. Moreover, the catadioptric imaging optics system is configured to enable image fields (33 mm in width) from 2 of the reticles to be imaged to the single imaging location in side by side relation with spacing of 5 mm or less between the image fields. Also, the catadioptric imaging optics system is configured to enable reticles with different patterns to be sequentially imaged to the single image location, to produce on a substrate what is known in the art as a “double exposure).
In addition, the catadioptric imaging optics system is configured to enable “substantially continuous” imaging of up to 4 reticles to the single imaging location as a substrate is moved in a single predetermined direction in relation to the single imaging location. Moreover the catadioptric imaging optics system is configured to enable substantially continuous imaging of up to 4 reticles to the single imaging location as a substrate is moved in each of a pair of opposite predetermined directions in relation to the single imaging location. Thus, the present invention is designed to accommodate substrate movement patterns that are substantially continuous in one direction in relation to the single imaging location, and also substrate movement patterns that are boustrophedonic (i. e. in predetermined back and forth movement patterns) relative to the single imaging location.
In a catadioptric imaging optics system, according to the principles of the present invention, there are two arms and a common leg. Each arm has (i) at least one concave mirror, (ii) at least one intermediate image in proximity to a fold mirror, to allow light to be incident on and reflected from the concave mirror without obscuration, and (iii) at least one switchable fold mirror, in proximity to a pupil plane, and the common leg has at least one further intermediate image in proximity to a v-mirror that combines the beams from two arms, where the beam size and shape facilitates the folding of the beams perpendicular to the plane of the two arms.
In addition, in a preferred embodiment, the catadioptric imaging optics system comprises optics with the prescriptions of
Also, an optical imaging system and method according to the principles of the present invention is particularly useful with an argon fluoride (ArF) immersion photolithographic scanner.
It should be noted that imaging to a “single imaging location” means a single location where a “substrate” photoresist is “imaged” (also referred to as “exposed” or “printed”) with a pattern that enables the substrate to be used in the creation of a semiconductor wafer, thin-film read head, flat panel display, or another device. Thus, the terms “single imaging location”, “substrate” and/or “wafer”, may each be used in this application, in referring to the foregoing concept. Also, the substrate is generally divided (optically) into sections referred to as “sites”, and each of those dies is imaged in the manner described herein, so that the plurality of sites (which would form the wafer) can ultimately be separated into semiconductor “shots”. In addition, the concept of “continuous imaging”, as used in this application, contemplates that a substrate (that is carried on a stage, as is well known to those in the art) moves past the single imaging location (generally at a constant velocity) and also allows for the fact that there may be some slowdowns (or even stoppages) of the movement of the substrate as the stage changes direction, returns to an initial position, etc.
Other features of the present invention will be apparent from the following detailed description and the accompanying drawings and exhibits
a-6d provide preferred prescriptions for the optics of the portion of the catadioptric imaging optical system of
Exhibit A is a schematic three dimensional illustration of the optics of
Exhibit B is a schematic three dimensional illustration of a system according to the present invention, with some ray lines shown thereon.
As described above, the present invention relates to a catadioptric imaging system and method that is configured to simultaneously image up to four (4) reticles to a single imaging location. That single imaging location is generally a location where a substrate (e.g. for use in creating a semiconductor wafer) that has a photoresist is imaged and then the image is “developed” to produce the pattern(s) for the wafer. Thus, in this application, reference to a “single imaging location” is intended to mean the type of imaging location where a substrate would be imaged in the formation of the patterns that are used to produce a semiconductor wafer.
The imaging optical system 10 comprises up to four reticles (Reticle A1, Reticle A2, Reticle B1, Reticle B2), and a catadioptric imaging optics system 200 configured to image a selected one or a plurality of the four reticles to a single imaging location W. Preferably, four reticles are grouped into two pairs of reticles, and the catadioptric imaging optics system 200 is configured to image a selected one of each of the two pairs of reticles to the single imaging location. In
As will be appreciated from
In the practice of the method of the present invention, up to 4 of the reticles are imaged to the single imaging location W, via the catadioptric imaging optics system 200. As a reticle is being scanned, it would be illuminated in ways well known to those in the art. Two switching mirrors (M1, M2) select the object field on one reticle from each of two pairs of reticles, so that two reticles can be imaged onto two adjacent fields at the imaging location W. It will also be recognized from the illustrated rays, that in the system of
In accordance with the X-Scan concept, each of the reticles is preferably oriented to be scanned in a manner that enables image fields (e.g., 33 mm in width) to be imaged from the reticle to the single imaging location by scanning along the short dimension of the exposure site. It should be noted that depending on the specific application for a lithography machine, a “Y-Scan” exposure pattern, in which the scanning direction is along the longer dimension of the exposure site and the illumination field size is not as wide (e.g., 26 mm in width), is also within the scope of this invention. Moreover, the catadioptric imaging optics system 200 is preferably configured to enable image fields from 2 of the reticles to be imaged to the single image location in side by side relation with spacing of 5 mm or less between the image fields. The fields may alternatively be more than 5 mm apart.
In addition, the catadioptric imaging optics system is configured to enable substantially continuous imaging of up to 4 reticles to the single imaging location as a substrate is moved in a single predetermined direction in relation to the single imaging location. Moreover, the catadioptric imaging optics system is configured to enable substantially continuous imaging of up to 4 reticles to the single imaging location as a substrate is moved in each of a pair of opposite predetermined directions in relation to the single imaging location. Thus, the present invention is designed to accommodate substrate movement patterns that are substantially continuous in one direction in relation to the single imaging location, and also substrate movement patterns that are boustrophedonic (i. e. in predetermined back and forth movement patterns) relative to the single imaging location. This aspect of the system and method of the present invention is described further below.
The optics forming an “arm” and the common “leg” of the catadioptric imaging optics preferably have the prescriptions shown and described
Since the optics arrays of each “arm” of the catadioptric imaging optics will have identical prescriptions to arrays 200a, 200b and 200c, as described in
The imaging optical system and method of the invention is particularly useful with a catadioptric imaging optics system that is configured with a numerical aperture of 1.35. The imaging optical system and method of this invention is preferably intended to form the imaging optical system for an ArF Immersion photolithographic scanner. Of course, other numerical apertures and illumination wavelengths are within the scope of this invention.
In the practice of a method, according to the principles of the present invention, one switching mirror (M1) selects an object field from either reticle A1 or A2. A second, independent, switching mirror (M2) selects another object field from either reticle B1 or B2. This allows two reticles, i.e. either A1 or A2 and either B1 or B2 to be imaged to the single imaging location W, in side by side relation. The two selected reticles are imaged to the single imaging location W via the Arms 1 and 2, the field splitting V mirror and the common set of optics forming the vertical “leg” 300 of the catadioptric imaging optics system.
With the X-Scan concept, and the preferred prescriptions for the optics of the imaging optics system (as described in
As will be further clear to those in the art, the illustration of
Although the switching mirrors M1, M2 in
With a catadioptric imaging optical system and method according to the preferred embodiment (using e.g. the X-Scan concept and the optics prescriptions of
The switching mirrors M1, M2, also allow for a relatively fast change of reticles imaged to the single imaging location W, without loading and unloading reticles from their stages. This is advantageous in improving the system throughput, including in situations such as double exposure, where a final wafer pattern is formed from two sequential exposures of a pair of different reticle patterns at the single imaging location.
It should also be noted that each arm of the catadioptric imaging optics system has (i) at least one concave mirror (e.g. the concave S-mirrors shown in
In the imaging sequence of
Thus, in the imaging sequence of
Applicants note that the imaging sequence of
Thus, as will be clear from the foregoing detailed description, the present invention provides an imaging optical system comprising up to four reticles, and a catadioptric imaging optics system configured to image a selected one or a plurality of the four reticles to a single imaging location. In the practice of the method of the present invention, up to 4 of the reticles are imaged to the wafer via the catadioptric imaging optics system. Preferably, four reticles are grouped into two pairs of reticles, and the catadioptric imaging optics system is configured to image a selected one of each of the two pairs of reticles to the single imaging location. Also, the catadioptric imaging optics system comprises a pair of switching fold mirrors, each of which is associated with one of the two pairs of reticles. Each of the switching fold mirrors has a pair of orientations, and when a folding mirror is in one of the pair of orientations, it is oriented to image one of its associated pair of reticles to the single imaging location.
Accordingly, the foregoing description describes and illustrates a system and method designed to image up to 4 reticles to a single imaging location, in a manner designed to provide high throughput, with a relatively high resolution, and with substrates (e.g. for forming semiconductor wafers) whose size may approach 450 mm. With the foregoing description in mind, the manner in which the principles of the present invention can be used in various ways to image a substrate will become apparent to those in the art.
This application is related to and claims priority from provisional application Ser. No. 61/104,477, filed Oct. 10, 2008, which provisional application is incorporated by reference herein.
Number | Date | Country | |
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61104477 | Oct 2008 | US |