Claims
- 1. A method of characterizing materials, comprising the steps of:
providing a substrate; synthesizing an array of materials on said substrate; illuminating at least a first material of said array with polarized light of a predefined wavelength, wherein said substrate is transparent to said predefined wavelength; detecting a portion of said polarized light passing through said first material and said substrate; and determining an orientational order of said first material based on said detected portion of light.
- 2. The method of claim 1, further comprising the step of introducing at least one reactant to said first material, wherein said reactant causes said first material to undergo a reaction, wherein said detecting step is performed at predefined intervals of time, and wherein said determining step determines said orientational order as a function of time.
- 3. The method of claim 1, further comprising the steps of repositioning said substrate such that each material of said array is sequentially illuminated, wherein the orientational order of each material of said array is sequentially determined.
- 4. The method of claim 1, wherein each materials of said array of materials is simultaneously illuminated with polarized light, and wherein the orientational order of each material of said array is determined.
- 5. A system for characterizing orientational order of an array of materials, comprising:
a substrate containing said array of materials, wherein said substrate is transparent to light of a predefined wavelength; a light source providing polarized light of said predefined wavelength, said light source located on a first side of said array of materials; an optical system for directing said polarized light at at least a first material of said array of materials; and a detector located on a second side of said array of materials, said detector outputting a signal corresponding to an intensity of said polarized light passing through said first material and said substrate, wherein said intensity provides information on the orientational order of said first material.
- 6. The system of claim 5, further comprising at least one reactant in contact with at least said first material, wherein said reactant causes said first material to undergo a reaction, and wherein said outputted signal corresponds to said intensity of said polarized light as a function of time.
- 7. The system of claim 5, wherein said light source simultaneously illuminates all of said materials of said array, and wherein said detector outputs a signal corresponding to said intensity of said polarized light passing through each of said materials of said array.
- 8. The system of claim 7, wherein said detector is a CCD detector.
- 9. The system of claim 5, wherein said substrate is moved relative to said light source and said detector such that said detector outputs a signal corresponding to said intensity of said polarized light passing through each of said materials of said array.
- 10. A method of characterizing a dielectric coefficient of each material of an array of materials, comprising the steps of:
providing a conducting substrate; synthesizing said array of materials on said conducting substrate; depositing an optically active layer onto said array of materials, wherein said optically active layer is comprised of an electroluminescent material; depositing a conducting layer onto said optically active layer; applying an increasing voltage between said conducting substrate and said conducting layer; and detecting an intensity of luminescence emitted by each of said materials of said array of materials as a function of applied voltage.
- 11. The method of claim 10, further comprising the step of comparing said detected luminescence to an intensity of luminescence emitted by a standard material.
- 12. A system for characterizing a dielectric coefficient of each material of an array of materials, comprising:
a conducting substrate, wherein said array of materials is deposited on said conducting substrate; an optically active layer deposited onto said array of materials, wherein said optically active layer is comprised of an electroluminescent material; a conducting layer deposited onto said optically active layer; a voltage source coupled to said conducting substrate and said conducting layer; a source controller, wherein said controller causes said source to apply a gradually increasing voltage to said substrate and said conducting layer; and a detector adjacent to said conducting layer, said detector monitoring emitted luminescence from each material of said array of materials as a function of applied voltage, wherein said detector outputs a signal corresponding to an intensity of luminescence emitted by each of said materials.
- 13. The system of claim 12, further comprising a processor coupled to said detector, wherein said processor compares said detected luminescence to an intensity of luminescence emitted by a standard material.
- 14. A method of characterizing a dielectric coefficient of each material of an array of materials, comprising the steps of:
providing a conducting substrate; synthesizing said array of materials on said conducting substrate; depositing an optically active layer onto said array of materials, wherein said optically active layer is comprised of an ferro-electric material; depositing a conducting layer onto said optically active layer; illuminating said ferro-electric material with a beam of polarized light; applying an increasing voltage between said conducting substrate and said conducting layer; and detecting a polarization change for each of said materials of said array of materials as a function of applied voltage.
- 15. A system for characterizing a dielectric coefficient of each material of an array of materials, comprising:
a conducting substrate, wherein said array of materials is deposited on said conducting substrate; an optically active layer deposited onto said array of materials, wherein said optically active layer is comprised of an ferro-electric material; a conducting layer deposited onto said optically active layer; a voltage source coupled to said conducting substrate and said conducting layer; a light source, wherein said light source directs a beam of polarized light at said ferro-electric material; a source controller, wherein said controller causes said source to apply a gradually increasing voltage to said substrate and said conducting layer; and a polarization sensitive detector adjacent to said conducting layer, said detector determining a first occurrence of a shift in polarization for each material of said array of materials.
- 16. A method of characterizing a combinatorial array of materials for temperature heterogeneity, comprising the steps of:
providing a substrate, wherein said substrate is of a low thermal mass; synthesizing said combinatorial array of materials on said substrate; depositing a liquid crystal layer onto said array of materials; applying a voltage across said combinatorial array of materials; illuminating said liquid crystal layer; and monitoring said illuminated liquid crystal layer with an image detector, wherein variations in an absorption of said liquid crystal layer adjacent to specific materials of said array of materials indicates temperature heterogeneity of said array of materials.
- 17. A system for characterizing a combinatorial array of materials for temperature heterogeneity, comprising:
a low thermal mass substrate, wherein said array of materials is deposited on said substrate; a liquid crystal layer deposited onto said array of materials; a voltage source coupled to said combinatorial array, said voltage source applying a voltage across said combinatorial array; a light source, wherein said light source directs a beam of light at said liquid crystal layer; a detection array source monitoring said illuminated liquid crystal layer, wherein variations in an absorption of said liquid crystal layer adjacent to specific materials of said array of materials indicates temperature heterogeneity of said array of materials.
- 18. A method of characterizing a Kerr rotation for each material of a heterogeneous array of materials, comprising the steps of:
providing a substrate; synthesizing said heterogeneous array of materials on said substrate; depositing a uniform layer of a known Kerr rotation onto said array of materials, wherein said uniform layer reflects the magnetization of a material of said heterogeneous array immediately adjacent to said uniform layer; illuminating said uniform layer with polarized light; passing said polarized light reflected by said uniform layer through a polarizer set near the extinction value of said light; applying a varying magnetic field to said heterogeneous array of materials; monitoring an intensity of said reflected light as a function of said varying magnetic field, wherein said intensity is monitored for a plurality of locations corresponding to said materials of said heterogeneous array of materials, wherein said intensity is proportional to said Kerr rotation for each material of said heterogeneous array of materials.
- 19. A system for characterizing a Kerr rotation for each material of a heterogeneous array of materials, comprising:
a substrate, wherein said array of materials is deposited on said substrate; a uniform layer of a known Kerr rotation deposited onto said array of materials; a light source, wherein said light source directs a beam of polarized light at said uniform layer; a polarizer set near the extinction value of said light, wherein light reflected from said uniform layer passes through said polarizer; a magnetic field generator for applying a magnetic field to said heterogeneous array of materials; a field generator controller for varying said magnetic field; a position sensitive detection system for monitoring an intensity of reflected light for a plurality of locations corresponding to said materials of said heterogeneous array of materials, wherein said detection system outputs a signal corresponding to said intensity; and a processor coupled to said detection system, wherein said processor determines said Kerr rotation for each material of said heterogeneous array of materials based on said intensity.
- 20. A method of determining a specific characteristic of a combinatorial array of materials, comprising the steps of:
providing a substrate; synthesizing said combinatorial array of materials on said substrate; illuminating said array of materials, said illuminated array of materials emitting photons; passing said emitted photons from said array of material through a spectral filter, wherein said spectral filter is selected from a plurality of spectral filters; monitoring an intensity of said emitted photons as a function of said spectral filter; comparing said monitored intensity to at least one calibrated sample; and determining said specific characteristic based on said comparison step.
- 21. The method of claim 20, wherein said specific characteristic is selected from the group consisting of radiance, luminance, and chromaticity.
- 22. A system for determining a desired characteristic for each material of a combinatorial array of materials, comprising:
a substrate, wherein said array of materials is deposited on said substrate; a light source, wherein said light source illuminates a portion of said array of materials, said illuminated portion of said array of materials emitting photons; a position sensitive detection array, said emitted photons imaged onto said detection array; a plurality of optical filters, wherein a controller determines which of said optical filters is interposed between said emitted photons and said detection array; at least one calibration standard; and a processor for comparing an intensity of detected emitted photons corresponding to each of said materials to said calibration standard, said processor determining said desired characteristic for each material of said array.
- 23. The system of claim 22, wherein said detection array is selected from the group consisting of CCD, CID, and CMOS arrays.
- 24. The system of claim 22, wherein said light source is selected from the group consisting of UVU, visible, near infrared, x-ray, and electron beam sources.
- 25. The system of claim 22, further comprising a translation stage for moving said substrate relative to said light source and said detection array.
- 26. The system of claim 25, wherein said translation stage is coupled to said processor.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of commonly assigned U.S. patent application Ser. No. 08/898,715, filed Jul. 22, 1997, and a continuation-in-part of commonly assigned, co-pending U.S. Provisional Applications Ser. Nos. 60/050,949, filed Jun. 13, 1997; 60/028,106, filed Oct. 9, 1996; 60/029,255, filed Oct. 25, 1996; 60/035,366, filed Jan. 10, 1997; 60/048,987, filed Jun. 9, 1997; 60/028,105, filed Oct. 9, 1996; and 60/035,202, filed Jan. 10, 1997; the complete disclosures of which are incorporated herein by reference for all purposes.
Provisional Applications (8)
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Number |
Date |
Country |
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60050949 |
Jun 1997 |
US |
|
60028106 |
Oct 1996 |
US |
|
60029255 |
Oct 1996 |
US |
|
60035366 |
Jan 1997 |
US |
|
60048987 |
Jun 1997 |
US |
|
60028105 |
Oct 1996 |
US |
|
60035202 |
Jan 1997 |
US |
|
60016102 |
Jul 1996 |
US |
Divisions (1)
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Number |
Date |
Country |
Parent |
09474344 |
Dec 1999 |
US |
Child |
09874758 |
Jun 2001 |
US |
Continuations (1)
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Number |
Date |
Country |
Parent |
08947085 |
Oct 1997 |
US |
Child |
09474344 |
Dec 1999 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
08898715 |
Jul 1997 |
US |
Child |
08947085 |
Oct 1997 |
US |