Claims
- 1. A photonic device comprising:
at least first and second optical waveguides; and, a buffer at least partially interposed between said first and second optical waveguides where they at least partially overlie one-another so as to at least partially mitigate interference between optical signals traversing said first and second optical waveguides.
- 2. The device of claim 1, wherein said interference comprises cross-talk.
- 3. The device of claim 1, further comprising:
a plurality of additional optical waveguides; and, a plurality of buffers interposed between said plurality of additional optical waveguides where they at least partially overlie one-another; wherein said device forms an optical crossconnect.
- 4. The device of claim 1, wherein said waveguides comprise at least one amorphous silicon material.
- 5. The device of claim 4, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F based alloys.
- 6. The device of claim 4, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of hydrogenated or fluorinated: a-SiCx where 0<x<1, a-SiNy where 0<y<1.33, a-SiOz where 0<z<2 and a-SiGew where 0<w<1.
- 7. The device of claim 1, wherein:
each of said optical waveguides comprises a core having a core refractive index; and, said buffer comprises a material having a refractive index operatively lower than said core refractive index.
- 8. The device of claim 1, wherein said buffer comprises at least one dielectric material.
- 9. The device of claim 1, wherein said buffer comprises at least one of silicon oxide and silicon nitride.
- 10. The device of claim 1, wherein said buffer comprises at least one organosilane material.
- 11. The device of claim 10, wherein said at least one organosilane material comprises at least one of polymethylsilsesquioxane and polyphenosilsesquioxane.
- 12. The device of claim 1, wherein said buffer comprises at least one flowable oxide.
- 13. The device of claim 1, wherein said buffer elevates said second of said optical waveguides with respect to said first of said optical waveguides.
- 14. The device of claim 13, wherein said elevation is sufficiently gradual to at least partially mitigate loss of said optical signals traversing said second optical waveguide due to said elevation.
- 15. The device of claim 1, wherein said waveguides comprise at least one amorphous silicon material, and said buffer comprises at least one organosilane material, flowable oxide or dielectric material.
- 16. A method for making a photonic integrated circuit, said method comprising:
forming a first optical waveguide; forming a buffer over at least a portion of said first optical waveguide; and, forming a second optical waveguide over at least a portion of said buffer; wherein, said buffer is adapted to at least partially mitigate interference between optical signals traversing said first and second optical waveguides.
- 17. The method of claim 16, wherein said forming said waveguides comprises using at least one amorphous silicon material.
- 18. The method of claim 17, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F based alloys.
- 19. The device of claim 17, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of hydrogenated or fluorinated: a-SiCx where 0<x<1, a-SiNy where 0<y<1.33, a-SiOz where 0<z<2 and a-SiGew where 0<w<1.
- 20. The method of claim 16, wherein each of said optical waveguides comprises a core having a core refractive index, and forming said buffer comprises using a material having a refractive index lower than said core refractive index.
- 21. The method of claim 20, wherein said forming said buffer further comprises using a grey scale mask to selectively remove a portion of said material having a refractive index lower than said core refractive index.
- 22. The method of claim 16, wherein said forming said buffer comprises utilizing a solution based material.
- 23. The method of claim 16, wherein said forming said buffer comprises utilizing at least one dielectric material.
- 24. The method of claim 16, wherein said forming said buffer comprises using at least one of Silicon nitride and Silicon oxide.
- 25. The method of claim 16, wherein said forming said buffer comprises using at least one organosilane material.
- 26. The method of claim 16, wherein said forming said buffer comprises using at least one of polymethylsilsesquioxane and polyphenosilsesquioxane.
- 27. The method of claim 16, wherein said forming said buffer comprises using at least one flowable oxide.
- 28. The method of claim 16, wherein said forming said buffer comprises forming a layer of dielectric material over said first waveguide and removing a portion of said deposited dielectric material using a grey scale mask.
- 29. The method of claim 28, wherein said forming said layer of dielectric material comprises at least one of spinning and depositing said dielectric material over said first optical waveguide.
- 30. The method of claim 16, wherein said forming said buffer comprises inkjet printing said buffer.
- 31. The method of claim 16, wherein said forming said buffer comprises spraying.
- 32. An optical communications device comprising:
a plurality of optical waveguides crossing one another; and, a buffer positioned above at least one of said waveguides to elevate at least one other of said waveguides over said at least one of said waveguides where they cross; wherein, said buffer at least partially mitigates losses in signals traversing said at least one and one other of said plurality of waveguides due to said crossing and elevates said at least one other of said waveguides sufficiently gradual to at least partially mitigate loss of optical signals traversing said at least one other of said optical waveguides due to said elevation.
- 33. The device of claim 32, wherein said waveguides comprise at least one amorphous silicon material, and said buffer comprises at least one organosilane material, flowable oxide or dielectric material.
- 34. The device of claim 32, wherein said elevation is at a rate between approximately 1:5 and approximately 1:100.
RELATED APPLICATION
[0001] This Application claims priority of U.S. patent application Ser. No. 60/287,277, filed Apr. 27, 2001, entitled DISC/RING RESONATOR IR DETECTOR FOR PHOTONIC COMMUNICATIONS, the entire disclosure of which is hereby incorporated by reference as if being set forth in its entirety herein.
Provisional Applications (1)
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Number |
Date |
Country |
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60287277 |
Apr 2001 |
US |