Journal of the Electrochemi-al Society: Solid-State Science and Technology, vol. 129(2), "New Dislocation Etchant for InP", by S. N. G. Chu et al., pp. 352-354. |
J. Electrochem, Soc.: Solid-State Science and Technology, May 1982, "Chemical Etching of InGaAsP/InP DH Wafer" by S. Adachi et al., pp. 1053-1062. |
Journal of Materials Science, vol. 8 (1973), "Chemical Etching of {111} and {100} Surfaces of InP", by B. Tuck et al., pp. 1559-1566. |
Journal of Crystal Growth, vol. 58 (1982) "LPE Growth on Structured {100} InP Substrates and Their Fabrication by Preferential Etching", by S. E. H. Turley et al., pp. 409-416. |
IEEE Journal of Quantum Electronics, vol. QE-18(1), Jan. 1982, "Chemically Etched-Mirror GaInAsP/InP Lasers-Review", by K. Iga et al., pp. 22-29. |
J. Electrochem. Soc.: Solid-State Science and Technology, Jun. 1981, "Chemically Etching Characteristics of (001)InP", by S. Adachi et al., pp. 1342-1349. |
IEEE Journal of Quantum Electronics, vol. QE-18(10), Oct. 1982, "Etched Mirror and Groove-Coupled GaInAsP/InP Laser Devices for Integrated Optics", by L. A. Coldren et al., pp. 1679-1688. |
Journal of Crystal Growth, vol. 29 (1975), "Revelation Metallographique Des Defauts Cristallins Dans InP", by A. Huber et al., pp. 80-84. |
Japanese Journal of Applied Physics, vol. 19(1), Jan. 1980, "Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes _and Integrated Optical Circuits" , by T. Kambaysh et al., pp. 79-85. |
IEEE Journal of Quantum Electronics, vol. QE-16(10), Oct., 1980, "GaInAsP/InP DH Lasers with a Chemically Etched Facet", by K. Iga et al., pp. 80-83. |