BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a diagram showing an example of a design pattern formed in a first embodiment;
FIG. 2 is a diagram showing an example of a writing pattern obtained when the design pattern in FIG. 1 is written;
FIG. 3 is a conceptual diagram for explaining a mesh region in the first embodiment;
FIG. 4 is a graph showing an example of an iterative calculation result in the first embodiment;
FIG. 5 is a diagram showing an example of a pattern formed in a second embodiment;
FIG. 6 is a diagram for explaining an area of a pattern reduced in the second embodiment;
FIG. 7 is a diagram for explaining an area error generated at an apex of the pattern according to the second embodiment;
FIG. 8 is a diagram showing an example of a pattern for measuring a correction error in the second embodiment;
FIG. 9 is a graph showing an example of a correction accuracy obtained when only an area is considered;
FIG. 10 is a graph showing an example of a correction accuracy obtained when solutions are calculated in cases 1 and 2 according to the second embodiment;
FIG. 11 is a graph showing an example of a correction accuracy obtained when a solution is found in case 3 according to the second embodiment;
FIG. 12 shows a main part of a flow chart in a writing method according to a fourth embodiment;
FIG. 13 is a conceptual diagram showing an example of a main configuration of a writing apparatus according to the fourth embodiment;
FIG. 14 is a diagram for explaining an example of a method to derive a correlative CD (η, BaseDose) between proximity effect correction coefficients and base doses of the beam with respect to a correction line width dimension CD according to the fourth embodiment;
FIGS. 15A and 15B are graphs of line widths with respect to proximity effect correction coefficients at the base dose of the beam in the fourth embodiment;
FIG. 16 is a graph showing a change of a line width CD, i.e., a correlative CD (η, BaseDose) of a correction line width dimension when proximity effect correction coefficients and base doses of the beam are changed along a correlative continuous line subjected to interpolation on the basis of combinations between optimum proximity effect correction coefficients and base doses of the beam about the standard proximity effect correction coefficient η0, the standard base dose BaseDose0 of the beam, and a line width obtained at this time in the fourth embodiment;
FIG. 17 is a conceptual diagram for explaining an operation of a conventional variable-shaped electron beam photolithography apparatus;
FIG. 18 is a diagram showing an example of a design pattern;
FIG. 19 is a diagram showing an example of a writing pattern obtained when the design pattern in FIG. 18 is written; and
FIG. 20 is a conceptual diagram for explaining a line width of an actually completed pattern after etching when writing is performed at the dimension in FIG. 19.