Patterning a Plurality of Fields on a Substrate to Compensate for Differing Evaporation Times

Abstract

A method of patterning a substrate comprising a plurality of fields, including, inter alia, positioning a first volume of fluid on a first subset of the plurality of fields of the substrate, with the first volume of fluid being subjected to a first evaporation time; positioning a second volume of fluid on a second subset of the plurality of fields of the substrate, differing from the first subset, with the second volume of fluid being subjected to a second evaporation time, differing from the first evaporation time; and patterning the first and second subsets of the plurality of fields, with the first subset of the plurality of fields being patterned prior to the second subset of the plurality of fields being patterned, with a volume associated with the second subset of the plurality of fields being greater than a volume associated with the first subset of the plurality of fields to compensate for the second evaporation time being greater than the first evaporation time.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified side view of a lithographic system having a template spaced-apart from a substrate;

FIG. 2 is a simplified side view of the substrate shown in FIG. 1, having a patterned layer positioned thereon;

FIG. 3 is a top down view of the substrate shown in FIG. 1 showing a plurality of fields in a first embodiment;

FIG. 4 is a top down view of the substrate shown in FIG. 1 showing a plurality of fields in a second embodiment; and

FIG. 5 is a flow diagram showing a method of patterning the plurality of fields of the substrate shown in FIG. 4.

Claims

1. A method of patterning a substrate comprising a plurality of fields, said method comprising: positioning a first volume of fluid on a first subset of said plurality of fields of said substrate, with said first volume of fluid being subjected to a first evaporation time;positioning a second volume of fluid on a second subset of said plurality of fields of said substrate, differing from said first subset, with said second volume of fluid being subjected to a second evaporation time, differing from said first evaporation time; andpatterning said first and second subsets of said plurality of fields, with said first subset of said plurality of fields being patterned prior to said second subset of said plurality of fields being patterned, with a volume associated with said second subset of said plurality of fields being greater than a volume associated with said first subset of said plurality of fields to compensate for said second evaporation time being greater than said first evaporation time.

2. The method as recited in claim 1 further including positioning said first and second volumes of fluid on said first and second subsets of said plurality of fields, respectively, concurrently.

3. The method as recited in claim 1 further including positioning said first volume of fluid on said first subset of said plurality of fields prior to positioning said second volume of fluid on said second subset of said plurality of fields.

4. The method as recited in claim 1 wherein the step of patterning further includes contacting said fluid with a mold having a pattern therein.

5. The method as recited in claim 1 wherein a third subset of said plurality of fields, differing from said first and second subsets of said plurality of fields, surrounds said first subset of said plurality of fields, with said third subset being substantially absent of fluid.

6. The method as recited in claim 1 wherein a third subset of said plurality of fields, differing from said first and second subsets of said plurality of fields, surrounds said second subset of said plurality of fields, with said third subset being substantially absent of fluid.

7. The method as recited in claim 1 wherein the step of positioning further includes disposing said fluid as a plurality of droplets.

8. A method of patterning a substrate comprising a plurality of fields, said method comprising: positioning a first volume of fluid on a first subset of said plurality of fields of said substrate;positioning a second volume of fluid on a second subset of said plurality of fields of said substrate, differing from said first subset; andpatterning said first and second subsets of said plurality of fields, with said first subset of said plurality of fields being patterned prior to said second subset of said plurality of fields being patterned, with a volume associated with said second subset of said plurality of fields being greater than a volume associated with said first subset of said plurality of fields to compensate for evaporation of said second volume of fluid.

9. The method as recited in claim 8 further including positioning said first and second volumes of fluid on said first and second subsets of said plurality of fields, respectively, concurrently.

10. The method as recited in claim 8 further including positioning said first volume of fluid on said first subset of said plurality of fields prior to positioning said second volume of fluid on said second subset of said plurality of fields.

11. The method as recited in claim 8 wherein the step of patterning further includes contacting said fluid with a mold having a pattern therein.

12. The method as recited in claim 8 wherein a third subset of said plurality of fields, differing from said first and second subsets of said plurality of fields, surrounds said first subset of said plurality of fields, with said third subset being substantially absent of fluid.

13. The method as recited in claim 8 wherein a third subset of said plurality of fields, differing from said first and second subsets of said plurality of fields, surrounds said second subset of said plurality of fields, with said third subset being substantially absent of fluid.

14. The method as recited in claim 8 wherein the step of positioning further includes disposing said fluid as a plurality of droplets.

15. A method of patterning a substrate comprising a plurality of fields in a nanoimprint lithography system, said method comprising: positioning a first volume of a nanoimprint fluid on a first subset of said plurality of fields of said substrate;positioning a second volume of a nanoimprint fluid on a second subset of said plurality of fields of said substrate, differing from said first subset, with said second volume being greater than said first volume; andpatterning said first and second subsets of said plurality of fields, with said first subset of said plurality of fields being patterned prior to said second subset of said plurality of fields being patterned.

16. The method as recited in claim 15 further including positioning said first and second volumes of said nanoimprint fluid on said first and second subsets of said plurality of fields, respectively, concurrently.

17. The method as recited in claim 15 further including positioning said first volume of said nanoimprint fluid on said first subset of said plurality of fields prior to positioning said second volume of said nanoimprint fluid on said second subset of said plurality of fields.

18. The method as recited in claim 15 wherein the step of patterning further includes contacting said fluid with a nanoimprint mold assembly having a pattern therein.

19. The method as recited in claim 15 wherein a third subset of said plurality of fields, differing from said first and second subsets of said plurality of fields, surrounds said first subset of said plurality of fields, with said third subset being substantially absent of said nanoimprint fluid.

20. The method as recited in claim 15 wherein a third subset of said plurality of fields, differing from said first and second subsets of said plurality of fields, surrounds said second subset of said plurality of fields, with said third subset being substantially absent of said nanoimprint fluid.

21. The method as recited in claim 15 wherein the step of positioning further includes disposing said nanoimprint fluid as a plurality of droplets.