Claims
- 1. A phase shift mask blank comprising a transparent substrate and a translucent film thereon, said translucent film transmitting light having intensity substantially not contributing to the exposure and shift a phase of said transmitted light,wherein said translucent film consists essentially of a plurality of constituents; a containing rate for each constituent being substantially equal in a film thickness direction.
- 2. A phase shift mask blank according to claim 1, wherein said translucent film constituents consist essentially of nitrogen, metal and silicon.
- 3. A phase shift mask blank according to claim 2, wherein said translucent film comprises 30 to 60 atomic % of silicon therein.
- 4. A phase shift mask blank according to claim 2, wherein said metal is selected from the group consisting of molybdenum, titanium, tantalum, tungsten and chromium.
- 5. A phase shift mask blank according to claim 2, wherein said metal is selected form the group consisting of molybdenum.
- 6. A phase shift mask blank according to claim 2, wherein said translucent film has a metal to silicon atomic ratio in a range between 1.5 and 6.0.
- 7. A phase shift mask blank according to claim 2, wherein said translucent film comprises 30 to 60 atomic % of nitrogen therein, and has a nitrogen to silicon atomic ratio of more than one.
- 8. A phase shift mask comprising a transparent substrate and a mask pattern formed with a translucent film thereon, said translucent film transmitting light having intensity substantially not contributing to the exposure and shifting a phase of said transmitted light,wherein said translucent film consists essentially of a plurality of constituents; a containing rate for each constituent being substantially equal in a film thickness direction.
- 9. A phase shift mask blank according to claim 8, wherein said translucent film constituents consist essentially of nitrogen, metal and silicon.
- 10. A phase shift mask blank according to claim 9, wherein said translucent film comprises 30 to 60 atomic % of silicon therein.
- 11. A phase shift mask blank according to claim 9, wherein said metal is selected form the group consisting of molybdenum, titanium, tantalum, tungsten and chromium.
- 12. A phase shift mask blank according to claim 9, wherein said metal is selected form the group consisting of molybdenum.
- 13. A phase shift mask blank according to claim 9, wherein said translucent film has a metal to silicon atomic ratio in a range between 1.5 and 6.0.
- 14. A phase shift mask blank according to claim 9, wherein said translucent film comprises 30 to 60 atomic % of nitrogen therein, and has a nitrogen to silicon atomic ratio of more than one.
- 15. A method of forming a fine pattern comprising steps of:preparing a substrate and a phase shift mask, wherein said phase sift mask comprises a transparent substrate and a mask pattern formed with a translucent film thereon, said translucent film transmitting light having intensity substantially not contributing to the exposure and shifting a phase of said transmitted light; said translucent film consisting essentially of a plurality of constituents; a containing rate for each constituent being substantially equal in a film thickness direction; and forming a pattern on said substrate through said phase shift mask by employing a photolithography technique.
- 16. A method of manufacturing a semiconductor device comprising steps of:preparing a substrate and a phase shift mask, wherein said phase shift mask comprises a transparent substrate and a mask pattern formed with a translucent film thereon, said translucent film transmitting light having intensity substantially not contributing to the exposure and shifting a phase of said transmitted light; said translucent film consisting essentially of a plurality of constituents; a containing rate for each constituent being substantially equal in a film thickness direction; and forming a pattern on said semiconductor device on said substrate through said phase shift mask by employing a photolithography technique.
Priority Claims (2)
Number |
Date |
Country |
Kind |
8-104411 |
Mar 1996 |
JP |
|
8-266658 |
Sep 1996 |
JP |
|
Parent Case Info
This application is a continuation of U.S. application Ser. No. 09/634,480 filed Aug. 8, 2000 now U.S. Pat. No. 6,242,138 which is a continuation of 09/327,032 filed Jun. 7, 1999 (now U.S. Pat. No. 6,153,341) which is a continuation of U.S. application Ser. No. 08/825,068, filed on Mar. 27, 1997 (now U.S. Pat. No. 5,942,356).
US Referenced Citations (4)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0 668 539 |
Feb 1995 |
EP |
Continuations (3)
|
Number |
Date |
Country |
Parent |
09/634480 |
Aug 2000 |
US |
Child |
09/814657 |
|
US |
Parent |
09/327032 |
Jun 1999 |
US |
Child |
09/634480 |
|
US |
Parent |
08/825068 |
Mar 1997 |
US |
Child |
09/327032 |
|
US |