Claims
- 1. A phase shift mask for exposure of a very fine pattern comprising:
- a light transmitting portion for permitting exposure light to pass therethrough, said light having an intensity capable of substantially contributing to the exposure;
- a light translucent portion for transmitting light having an intensity substantially not contributing to the exposure, with a boundary between said light translucent portion and said light transmitting portion;
- said exposure light being canceled in phase in an area adjacent to the boundary between said light translucent portion and the light transmitting portion when the exposure light passes through the light translucent portion and the light transmitting portion; and
- said light translucent portion being formed of a thin film consisting essentially of nitrogen, metal and silicon, wherein said thin film comprises 8 to 18 atomic % of metal and said metal is selected from the group consisting of molybdenum and titanium.
- 2. The phase shift mask according to claim 1, wherein said thin film compromise 30-60 atomic percent of silicon and 30-60 atomic percent of nitrogen.
- 3. The phase shift mask according to claim 2, wherein the ratio of metal and silicon is 1:1.5-6.0.
- 4. A phase shift mask blank utilized for a phase shift mask set forth in claim 3.
- 5. A phase shift mask blank utilized for a phase shift mask set forth in claim 2.
- 6. A phase shift mast blank utilized for a phase shift mask set forth in claim 1.
Priority Claims (2)
Number |
Date |
Country |
Kind |
8-104411 |
Mar 1996 |
JPX |
|
8-266658 |
Sep 1996 |
JPX |
|
Parent Case Info
This application is a continuation of Ser. No. 08/825,068 filed Mar. 27, 1997, U.S. Pat. No. 5,942,356.
US Referenced Citations (2)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0 668 539 A2 |
Feb 1995 |
EPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
825068 |
Mar 1997 |
|