Claims
- 1. A phase-shift mask blank having a light semi-transmitting film which contains a transition metal, silicon and nitrogen as the main components on a transparent substrate,
- the light semi-transmitting film containing 5 to 70 at % of nitrogen and the light semi-transmitting film having a surface center-line average roughness of 0.1 to 10 nm Ra.
- 2. The phase-shift mask blank of claim 1, wherein the light semi-transmitting film contains 5 to 55 at % of the transition metal.
- 3. The phase-shift mask blank of claim 1, wherein the light semi-transmitting film contains 5 to 80 at % of silicon.
- 4. The phase-shift mask blank of claim 1, wherein the light semi-transmitting film has a transmittance of 4 to 20% to exposure light.
- 5. The phase-shift mask blank of claim 1, wherein the light semi-transmitting film has a sheet resistance of 50 to 5.times.10.sup.7 .OMEGA./.quadrature..
- 6. The phase-shift mask blank of claim 1, wherein the transition metal is at least one selected from tungsten, tantalum, chromium or titanium.
- 7. A phase-shift mask having a mask pattern formed of a light-transmitting portion and a light semi-transmitting portion, obtained by a patterning treatment in which the light semi-transmitting film of the phase-shift mask blank recited in claim 1 is selectively removed in conformity with a predetermined pattern.
- 8. A method of transferring a pattern formed on a mask to a receptor by exposure, wherein the mask is the phase-shift mask recited in claim 7.
- 9. A phase-shift mask blank of claim 1 wherein not more than 1/2 of the total of silicon atoms which are contained in the light semi-transmitting film are forming silicide by directly bonding to the transition metal.
- 10. A phase-shift mask having a mask pattern formed of a light-transmitting portion and a light semi-transmitting portion, obtained by a patterning treatment in which the light semi-transmitting film of the phase-shift mask blank recited in claim 9 is selectively removed in conformity with a predetermined pattern.
- 11. A process for the production of a phase-shift mask blank having a light semi-transmitting film which contains a transition metal, silicon and nitrogen as the main components on a transparent substrate,
- the light semi-transmitting film containing 5 to 70 at % of nitrogen and the light semi-transmitting film having a surface center-line average roughness of 0.1 to 10 nm Ra which process comprises the step of sputtering with a transition metal and silicon being as a target while introducing a gas containing a nitrogen gas and/or a nitrogen compound gas, in the substantial absence of an oxygen gas and/or an oxygen compound gas into a sputtering apparatus, to form a light semi-transmitting film which at least contains a transition metal, silicon and nitrogen.
Parent Case Info
This is a Continuation of PCT application PCT/JP95/01432, filed Jul. 19, 1995.
US Referenced Citations (6)
Foreign Referenced Citations (8)
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Entry |
Shih and Dove J. Vac. Sci. Technol. B 12(1), Jan./Feb. 1984, pp. 32-36 Thin Film materials for the preparation of attenuating phase shift masks. |
Patent Abstracts of Japan vol. 095, No. 003, Apr. 1995. |
Continuations (1)
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Number |
Date |
Country |
Parent |
PCT/JP95/01432 |
Jul 1995 |
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