Claims
- 1. A photonic integrated circuit comprising:
at least one photonic component being suitable for operation with a plurality of photons and comprising an operational material having a bandgap energy close to the energy of said photons; and, at least one photonic component being suitable for operation with said plurality of photons, comprising an operational material having a bandgap energy substantially higher than said photons and being adjacent to said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons; wherein, said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises at least one amorphous silicon based alloy material.
- 2. The photonic integrated circuit of claim 1, wherein said amorphous silicon based alloy material is plasma enhanced chemical vapor deposited.
- 3. The photonic integrated circuit of claim 1, wherein said amorphous silicon based alloy material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F based alloys.
- 4. The photonic integrated circuit of claim 1, wherein said amorphous silicon based alloy material comprises at least one material selected from the group consisting essentially of hydrogenated or fluorinated: a-SiCx where 0<x<1, a-SiNy where 0<y<1.33, a-SiOz where 0<z<2 and a-SiGew where 0<w<1.
- 5. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises a photonic transmission source.
- 6. The photonic integrated circuit of claim 3, wherein said photonic transmission source is a laser.
- 7. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises an electroabsorption modulator.
- 8. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises a semiconductor optical amplifier.
- 9. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a waveguide based connector.
- 10. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a waveguide based splitter.
- 11. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a wavelength filtering element.
- 12. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a wavelength selective element.
- 13. The photonic integrated circuit of claim 12, wherein said wavelength selective element comprises a wavelength demultiplexer.
- 14. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a distributed bragg grating reflector.
- 15. The photonic integrated circuit of claim 10, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons further comprises a phase region.
- 16. The photonic integrated circuit of claim 11, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises a gain region.
- 17. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises at least one photonic detector.
- 18. The photonic integrated circuit of claim 13, wherein said at least one photonic detector comprises a plurality of photonic detectors.
- 19. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises at least one type III-V semiconductor device.
- 20. The photonic integrated circuit of claim 15, wherein said at least one type III-V semiconductor device comprises a plurality of type III-V semiconductor devices, and said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons optically couples said type III-V semiconductor devices to one another.
- 21. A photonic integrated circuit comprising:
a plurality of type III-V semiconductor photonic devices; and, at least one amorphous silicon material waveguide optically coupling said plurality of type III-V semiconductor photonic devices together.
- 22. The photonic integrated circuit of claim 21, wherein said at least one amorphous silicon material waveguide is plasma enhanced chemical vapor deposited.
- 23. The photonic integrated circuit of claim 21, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F based alloys.
- 24. The photonic integrated circuit of claim 21, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of hydrogenated or fluorinated: a-SiCx where 0<x<1, a-SiNy where 0<y<1.33, a-SiOz where 0<z<2 and a-SiGew where 0<w<1.
- 25. The photonic integrated circuit of claim 21, wherein said plurality of type III-V semiconductor photonic devices and at least one waveguide are index matched.
- 26. The photonic integrated circuit of claim 21, wherein said plurality of type III-V semiconductor photonic devices comprises at least one laser.
- 27. The photonic integrated circuit of claim 21, wherein said plurality of type III-V semiconductor photonic devices comprises at least one electroabsorption modulator.
- 28. The photonic integrated circuit of claim 21, wherein said plurality of type III-V semiconductor photonic devices comprises at least one semiconductor optical amplifier.
- 29. The photonic integrated circuit of claim 17, wherein said plurality of type III-V semiconductor photonic devices comprise at least one photonic detector.
- 30. A method for forming a photonic integrated circuit comprising:
forming at least one type III-V semiconductor device on a substrate; and, forming at least one amorphous silicon material waveguide on said substrate using plasma enhanced chemical vapor deposition; wherein said at least one waveguide is optically coupled to said at least one type III-V semiconductor conductor device.
- 31. The method of claim 30, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F alloys.
- 32. The method of claim 30, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of hydrogenated or fluorinated: a-SiCx where 0<x<1, a-SiNy where 0<y<1.33, a-SiOz and a-SiGew where 0<w<1.
RELATED APPLICATION
[0001] This Application claims priority of U.S. Patent application Ser. No. 60/287,277, filed Apr. 27, 2001, entitled DISC/RING RESONATOR IR DETECTOR FOR PHOTONIC COMMUNICATIONS, the entire disclosure of which is hereby incorporated by reference as if being set forth in its entirety herein.
Provisional Applications (1)
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Number |
Date |
Country |
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60287277 |
Apr 2001 |
US |