Claims
- 1. A photonic integrated circuit comprising:at least one photonic component being suitable for operation with a plurality of photons and comprising an operational material having a bandgap energy close to the energy of said photons; and, at least one photonic component being suitable for operation with said plurality of photons, comprising an operational material having a bandgap energy substantially higher than said photons and being adjacent to and suitable for providing optical interconnectivity for said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons; wherein, said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises at least one amorphous silicon based alloy material.
- 2. The photonic integrated circuit of claim 1, wherein said amorphous silicon based alloy material is plasma enhanced chemical vapor deposited.
- 3. The photonic integrated circuit of claim 1, wherein said amorphous silicon based alloy material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F based alloys.
- 4. The photonic integrated circuit of claim 1, wherein said amorphous silicon based alloy material comprises at least one material selected from the group consisting essentially of hydrogenated or fluorinated: a-SiCx where 0<x<1, a-SiNy where 0<y<1.33, a-SiOz where 0<z<2 and a-SiGew where 0<w<1.
- 5. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises a photonic transmission source.
- 6. The photonic integrated circuit of claim 5, wherein said photonic transmission source is a laser.
- 7. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises an electroabsorption modulator.
- 8. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises a semiconductor optical amplifier.
- 9. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a waveguide based connector.
- 10. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a waveguide based splitter.
- 11. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a wavelength filtering element.
- 12. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a wavelength selective element.
- 13. The photonic integrated circuit of claim 12, wherein said wavelength selective element comprises a wavelength demultiplexer.
- 14. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons comprises a distributed bragg grating reflector.
- 15. The photonic integrated circuit of claim 10, wherein said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons further comprises a phase region.
- 16. The photonic integrated circuit of claim 11, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises a gain region.
- 17. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises at least one photonic detector.
- 18. The photonic integrated circuit of claim 13, wherein said at least one photonic detector comprises a plurality of photonic detectors.
- 19. The photonic integrated circuit of claim 1, wherein said at least one photonic component comprising an operational material having a bandgap energy close to the energy of said photons comprises at least one type III-V semiconductor device.
- 20. The photonic integrated circuit of claim 15, wherein said at least one type III-V semiconductor device comprises a plurality of type III-V semiconductor devices, and said at least one photonic component comprising an operational material having a bandgap energy substantially higher than said photons optically couples said type III-V semiconductor devices to one another.
- 21. A photonic integrated circuit comprising:a plurality of type III-V semiconductor photonic devices; and, at least one amorphous silicon material waveguide optically coupling said plurality of type III-V semiconductor photonic devices together.
- 22. The photonic integrated circuit of claim 21, wherein said at least one amorphous silicon material waveguide is plasma enhanced chemical vapor deposited.
- 23. The photonic integrated circuit of claim 21, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F based alloys.
- 24. The photonic integrated circuit of claim 21, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of hydrogenated or fluorinated: a-SiCx where 0<x<1, a-SiNy where 0<y<1.33, a-SiOz where 0<z<2 and a-SiGew where 0<w<1.
- 25. The photonic integrated circuit of claim 21, wherein said plurality of type III-V semiconductor photonic devices and at least one waveguide are index matched.
- 26. The photonic integrated circuit of claim 21, wherein said plurality of type III-V semiconductor photonic devices comprises at least one laser.
- 27. The photonic integrated circuit of claim 21, wherein said plurality of type III-V semiconductor photonic devices comprises at least one electroabsorption modulator.
- 28. The photonic integrated circuit of claim 21, wherein said plurality of type III-V semiconductor photonic devices comprises at least one semiconductor optical amplifier.
- 29. The photonic integrated circuit of claim 17, wherein said plurality of type III-V semiconductor photonic devices comprise at least one photonic detector.
- 30. A method for forming a photonic integrated circuit comprising:forming at least one type III-V semiconductor device on a substrate; and, forming at least one amorphous silicon material waveguide on said substrate using plasma enhanced chemical vapor deposition; wherein said at least one waveguide is optically coupled to said at least one type III-V semiconductor conductor device.
- 31. The method of claim 30, wherein said amorphous silicon material comprises at least one material selected from the group consisting essentially of: a-Si:H and a-Si:F based alloys.
- 32. The method of claim 30, wherein said amorphous silicon material comprises at least one material selected from the group consisting of hydrogenated or fluorinated: a-SiCx where 0<x<1, a-SiNy where 0<y<1.33, a-SiOz where 0<z<2 and a-SiGew where 0<w<1.
RELATED APPLICATION
This Application claims priority of U.S. Patent application Ser. No. 60/287,277, filed Apr. 27, 2001, entitled DISC/RING RESONATOR IR DETECTOR FOR PHOTONIC COMMUNICATIONS, the entire disclosure of which is hereby incorporated by reference as if being set forth in its entirety herein.
US Referenced Citations (12)
Provisional Applications (1)
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Number |
Date |
Country |
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60/287277 |
Apr 2001 |
US |