Patent Application
20250216602
The disclosed implementations relate generally to devices and methods used in interconnecting semiconductor dies, and in particular to those for optical interconnection using integrated circuits and/or external chiplets.
The subject matter discussed in this section should not be assumed to be prior art merely as a result of its mention in this section. Similarly, a problem mentioned in this section or associated with the subject matter provided as background should not be assumed to have been previously recognized in the prior art. The subject matter in this section merely represents different approaches, which in and of themselves can also correspond to implementations of the claimed technology.
Integrated circuits (ICs) with processors, especially those for executing artificial intelligence and machine learning functions, move large amounts of data among one or more processor ICs and one or more memory ICs. Chiplets may aid in the interconnection of processor dies, memory dies, and other circuits to increase the bandwidth, and decrease the latency and power dissipated in the process.
In some aspects, the techniques described herein relate to a package including: an electronic integrated circuit (EIC) including a thermal controller, a signal interface coupled with the thermal controller, and a device interface; and a photonic integrated circuit (PIC) coupled with the EIC including a first photonic device electrically coupled with the device interface, and a first device heater with a device heater power input; wherein the first device heater is located within three thousand nanometers (3,000 nm) from the first photonic device; and wherein the PIC is electrically coupled with the EIC on a first side and is configured to receive heater power from a second side opposite to the first side.
In some aspects, the techniques described herein relate to a method of compensating temperature effects in a photonic device in a photonic integrated circuit (PIC), including one or more cycles of: in a temperature sensor, measuring a sensor temperature related to a device temperature; communicating the sensor temperature to a thermal controller in an electronic integrated circuit (EIC); in the thermal controller, determining if the sensor temperature is below a target temperature; and based on determining that the sensor temperature is below the target temperature, generating a power control signal, communicating the power control signal to a heater power source, generating heater power, and applying the heater power to a device heater located within three thousand nanometers (3,000 nm) from the photonic device, wherein the power control signal includes information derived from the sensor temperature and related to the heater power.
In some aspects, the techniques described herein relate to a method of compensating temperature effects in a photonic device, including: receiving temperature information; using the temperature information for a table address to find heater power control data; and using the heater power control data to set a heater power level.
A further understanding of the nature and the advantages of specific implementations disclosed herein may be realized by reference of the remaining portions of the specification and the attached drawings.
The invention will be described with reference to the drawings, in which:
In the figures, like reference numbers may indicate functionally similar elements. The systems and methods illustrated in the figures, and described in the Detailed Description below, may be arranged and designed in a wide variety of different implementations. Neither the figures nor the Detailed Description are intended to limit the scope as claimed. Instead, they merely represent examples of different implementations of the invention.
Processing an artificial intelligence (AI) workload often uses specialized hardware. Typical hardware bridges two chips with an electrical interconnect. The electrical interconnect consumes high power, has pin count limitations, and can only bring data to the edge of the chip. When the memory is in a central region of the chip it requires extra distance for signals to travel every time the memory is accessed by a processor sending a request to the edge of the chip from outside the chip. This is highly inefficient and makes it difficult for AI computing hardware to keep up with the demands required by an AI application.
This document discloses an optical multi-die interconnect bridging element (OMIB). OMIBs can be used as bridges between semiconductor dies, e.g., electrical integrated circuits (EICs). A bridge can include the OMIB alone, or in combination with a substrate that is coupled to the OMIB or that has the OMIB embedded within it. The use of OMIBs for multi-die processing systems solves many of the problems associated with processing an AI workload, including latency, power, and bandwidth. A photonic receiver may comprise two portions, for example a first portion in the OMIB, including a modulator and/or a photodetector, and a second portion in the EIC, including an analog/mixed-signal (AMS) block as described later herein.
In various arrangements, the OMIB can transmit or receive a photonic signal to transport data. A memory, such as a cache, can be positioned at a central region of the EIC die within two millimeters (2 mm) from an AMS block, such that the photonic transceiver in the OMIB is proximate to an edge of the memory directly above or below the portion of the die where the edge of the memory is positioned. The central region may intersect the center of the EIC die. Compute elements such as central processing units (CPUs), graphic processing units (GPUs), tensor processing units (TPUs) can also be beneficially arranged at the central region of the die within two millimeters (2 mm) of where the photonic transceivers are positioned, or in a spatial association with the memory. Photonic ICs have avoided reaching the center of the die of connecting chips because of the heat produced by the connecting chips. Photonic chips may have a limited temperature range in which modulators perform within specifications. One reason an OMIB in the disclosed technology can reach the center of the die is that it uses temperature-stabilized modulators as described in U.S. provisional patent application Ser. No. 63/420,330, entitled “Thermally Stable Optical Modulation Elements Coupled to Electronic Elements.”
As a result, the OMIB is faster and uses less power when compared to a traditional system. Latency is improved by carrying the data photonically to the point of compute rather than to the edge of the die. This allows the die to save electrical pipeline stages and also utilizes less electrical connections to carry the data from the edge of the chip to the interior where the memory is located. The electrical movement of the data from the edge of the die to the interior requires a path for the data that is slower and more power hungry. If an exemplary system is used to train an AI model, data is continuously moved between the points of storage and the points of use, and the benefit of photonic transport rather than electric transport results in substantial savings in power and time, making these types of complex AI system feasible.
The description may use perspective-based descriptions such as top/bottom, in/out, over/under, and the like. Such descriptions are merely used to facilitate the discussion and are not intended to restrict the application of implementations described herein to any particular orientation.
As used herein, the phrase “one of” should be interpreted to mean exactly one of the listed items. For example, the phrase “one of A, B, and C” should be interpreted to mean any of: only A, only B, or only C.
As used herein, the phrases “at least one of” and “one or more of” should be interpreted to mean one or more items. For example, the phrase “at least one of A, B, and C” or the phrase “at least one of A, B, or C” should be interpreted to mean any combination of A, B, and/or C.
Unless otherwise specified, the use of ordinal adjectives “first”, “second”, “third”, etc., to describe an object, merely refers to different instances or classes of the object and does not imply any ranking or sequence.
The term “coupled” is used in an operational sense and is not limited to a direct or an indirect coupling. “Coupled to” is generally used in the sense of directly coupled, whereas “coupled with” is generally used in the sense of directly or indirectly coupled. “Coupled” in an electronic system may refer to a configuration that allows a flow of information, signals, data, or physical quantities such as electrons between two elements coupled to or coupled with each other. In some cases, the flow may be unidirectional, in other cases the flow may be bidirectional or multidirectional. Coupling may be galvanic (in this context meaning that a direct electrical connection exists), capacitive, inductive, electromagnetic, optical, or through any other process allowed by physics.
The term “connected” is used to indicate a direct connection, such as electrical, optical, electromagnetic, or mechanical, between the things that are connected, without any intervening things or devices.
The term “configured to” perform a task or tasks is a broad recitation of structure generally meaning “having circuitry that” performs the task or tasks during operation. As such, the described item can be configured to perform the task even when the unit/circuit/component is not currently on or active. In general, the circuitry that forms the structure corresponding to “configured to” may include hardware circuits, and may further be controlled by switches, fuses, bond wires, metal masks, firmware, and/or software. Similarly, various items may be described as performing a task or tasks, for convenience in the description. Such descriptions should be interpreted as including the phrase “configured to.”
As used herein, the term “based on” is used to describe one or more factors that affect a determination. This term does not foreclose the possibility that additional factors may affect the determination. That is, a determination may be solely based on specified factors or based on the specified factors as well as other, unspecified factors. Consider the phrase “determine A based on B.” This phrase specifies that B is a factor that is used to determine A or that affects the determination of A. This phrase does not foreclose that the determination of A may also be based on some other factor, such as C. This phrase is also intended to cover an implementation in which A is determined based solely on B. The phrase “based on” is thus synonymous with the phrase “based at least in part on.”
A “processor” includes any suitable hardware system, mechanism or component that processes data, signals or other information. A processor can include a system with a general-purpose central processing unit, multiple processing units, dedicated circuitry for achieving functionality, or other systems. Examples of processing systems can include servers, clients, end user devices, routers, switches, networked storage, etc. A “computer” may be any processor in communication with a memory. The memory may be any suitable processor-readable storage medium, such as random-access memory (RAM), read-only memory (ROM), magnetic or optical disk, or other tangible media suitable for storing instructions for execution by the processor.
The terms “substantially”, “close”, approximately”, “near”, and “about” refer to being within minus or plus 10% of an indicated value, unless explicitly specified otherwise.
The following terms or acronyms used herein are defined at least in part as follows:
“AI”—artificial intelligence
“AMS”—analog/mixed-signal
“BGA”—ball-grid array
A “channel” is one or more lanes that may be bonded together.
“Chiplet”—an integrated circuit with simple or specialized functionality to be used in combination with other ICs or chiplets in a multi-chip assembly.
“CLE”—chiplet light engine
“CPU”—central processing unit
“CW”—continuous wave
“DDR” memory—double-data rate memory
“DFB”—distributed fiber Bragg
“DIMM”—dual in-line memory module
“DRV”—driver
“DSP”—digital signal processor
“EAM”—electroabsorption modulator
“EIC”—electronic integrated circuit
“EW”—evanescent wave
“FAU”—fiber array unit
FBG—fiber Bragg grating
“FPGA”—field-programmable gate array
“GC”—grating coupler—a coupling between an optical fiber and an on-chip photonic waveguide.
“GPU”—graphic processing unit
“GRIN” lens—graded index lens
“HBM”—high-bandwidth memory
“IC”—integrated circuit—a monolithically integrated circuit, i.e., a single semiconductor die which may be delivered as a bare die or as a packaged circuit. For the purposes of this document, the term integrated circuit also includes packaged circuits that include multiple semiconductor dies, stacked dies, or multiple-die substrates. Such constructions are now common in the industry, produced by the same supply chains, and for the average user often indistinguishable from monolithic circuits.
A “lane” includes a serializer, a link, and a deserializer.
“LED”—light emitting diode
“LDSU”—load/store unit
A “link” in the context of this patent document is the combination of a modulator, a photonic path (in an optical transmission medium), and a photodetector.
“LGA”—land grid array
“ML”—machine learning
“MLA”—micro-lens array
“MOD”—modulator
“MZI”—Mach-Zehnder interferometer
“OI”—optical interface—an interface that uses any means for optical interfacing between a fiber and a photonic IC.
“OMIB”—optical multi-die interconnect bridge
“PCB”—printed circuit board
“PCIe”—PCI express—a high-speed serial computer expansion bus.
“PCM”—phase-change memory
“PD”—photo detector, for example a photo diode.
“PGA”—pin-grid array
“PIC”—photonic integrated circuit
A “PIN diode”—a diode a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region.
A “processing device”, “processor”, “compute device”, or “compute element” may
refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.
“QR”—quick response
“RAM”—random access memory. Some types are static RAM (SRAM), dynamic RAM (DRAM), magnetic RAM (MRAM), resistive RAM (RRAM), conductive bridging RAM (CBRAM), etc.
“RDL”—redistribution layer—an extra metal layer on an IC to make bondpads available at other locations of the die.
“SCM”—storage-class memory
“SLD”—superluminescent diode
“SSD”—solid-state drive
“SOA”—semiconductor optical amplifier
“TPU”—tensor processing unit
“UCIe”—Universal Chiplet Interconnect Express—an open specification for a die-to-die interconnect and serial bus between chiplets.
“VCSEL”—vertical-cavity surface-emitting lasers
A “waveguide” is an implementation of a unidirectional photonic path in an optical transmission medium.
“WDM”—wavelength division multiplexing.
Implementations herein relate to resolving power, latency, or pin-count concerns by providing various OMIB configurations and various packages that include at least one OMIB.
The OMIB can be formed in a second process using a second wafer (not shown) in a manner analogous to the fabrication of the die 102. The OMIB is a photonic integrated circuit (PIC) and has optical components fabricated therein, as opposed to the die 102 which is an electronic integrated circuit (EIC) and typically has electronic elements fabricated therein. The OMIB can be embedded into a package substrate. The package substrate may be considered to be a cored or coreless substrate. The package substrate may include one or more layers of a dielectric material which may be organic or inorganic. The package substrate may further include one or more conductive elements such as vias, pads, traces, microstrips, strip lines, and the like. The conductive elements may be internal to, or on the surface of, the package substrate. Generally, the conductive elements may allow for the routing of signals through the package substrate or between elements coupled to the package substrate. In some implementations the package substrate may be, for example, a printed circuit board (PCB), an interposer, a motherboard, or some other type of substrate.
In some implementations, the wafer 100 or the die 102 may include a memory device, a compute device, or both (examples include, but are not limited to, a random-access memory (RAM) device, (such as a static RAM (SRAM) device, a magnetic RAM (MRAM) device, a resistive RAM (RRAM) device, or a conductive-bridging RAM (CBRAM) device), a logic device (e.g., an AND, OR, NAND, NOR, or EXOR gate), a NAND flash memory, a solid-state drive (SSD) memory, a NOR flash memory, a CMOS memory, a thin film transistor-based memory, a phase-change memory (PCM), a storage class memory (SCM), a magneto-resistive memory (MR-RAM), a resistive RAM, a DRAM, a high bandwidth memory (HBM), a DDR-based DRAM, a DIMM memory, a CPU, a GPU, an MPU, a tensor engine, a load/store unit (LDSU), a neural compute engine, a dot-product and/or convolution engine, a field-programmable gate array (FPGA), an AI accelerator, or any other suitable circuit element. Multiple ones of these devices may be combined on a single die 102. For example, die 102 may include a memory comprising multiple memory arrays, one or more processors, other logic, communication circuits, and power management functions, and execute instructions stored in the memory array, or otherwise interact with the memory array using the processors on die 102.
Various implementations can use different types of light engines. The light engine can be external or integrated into the OMIB. Example implementations can use the following light engines to bring an optical signal to and from a package that includes OMIB 330: laser diodes—these are highly coherent light sources that produce a narrow beam of light, and that are widely used in photonic chips for data communication and sensing applications; light-emitting diodes (LEDs)—a type of diode that emits light when a current passes through it (they are low-cost, compact, and have a long lifetime, making them a popular choice for photonic chips); superluminescent diodes (SLDs)—SLDs are similar to LEDs, but they emit a wider, broadband light spectrum (SLDs are used for applications such as optical amplification, wavelength division multiplexing, and fiber optic sensing); vertical-cavity surface-emitting lasers (VCSELs)—these are lasers that emit light perpendicular to the chip surface, making them ideal for applications in photonics (VCSELs are widely used in data communication and sensing applications, such as 3D sensing, LiDAR, and data center interconnects); and silicon photonics—devices that use the light-carrying properties of silicon to produce light sources on silicon chips (silicon photonics has the potential to revolutionize photonics by reducing the size, cost, and power consumption of photonic components). These are some of the most commonly used light sources with a package that includes an OMIB 330. The choice of light engine depends on the specific requirements of the implementation, such as wavelength, power, and modulation speed.
The light engine may be located locally on OMIB 330 or connect to OMIB 330 via fiber 360. When integrated onto the PIC, distributed fiber Bragg (DFB) lasers or quantum dot lasers can be attached during processing or integrated in the native technology where possible. When remote, any packaged continuous wave (CW) laser suitable in power and spectrum for the modulation technology may be used. In one implementation, the light source is a set of DFB lasers attached to a silicon interposer and connected to the PIC via optical fibers.
The optical interface (OI) 350 is used to terminate optical fibers at the edge or the top of OMIB 330 for optical input and/or output to occur from external processes or devices that are communicatively coupled to package 300 via the fibers. The choice of OI depends on the specific requirements of the implementation, such as the wavelength of light, the coupling efficiency, and the cost. Optical interface 350, and any other optical interfaces in and on OMIB 330, can include any means for optical interfacing between a fiber and a photonic IC, for example: an edge coupler; a grating coupler (CG); a graded index (GRIN) lens coupler, a fiber Bragg grating (FBG) coupler, a micro-lens array (MLA) coupler, an evanescent wave (EW) coupler, an adiabatic coupler, a wavelength division multiplexing (WDM) coupler, a prism coupler, a butt coupler, an end-fire coupler, and a V-groove coupler.
In one implementation, optical interface 350 includes a fiber array unit (FAU) to connect the OMIB optically to a light source and/or an optical I/O unit. The FAU is a device used in optical communication systems that combines or separates optical signals from multiple fibers into a single optical signal or multiple optical signals, respectively. The FAU can be used for a variety of applications, such as wavelength division multiplexing (WDM), parallel optical interconnects, and optical sensing. There are two main types of fiber array units that can be used: linear and circular. Linear FAUs combine or separate optical signals along one or more straight lines, while circular fiber array units combine or separate optical signals in a circular configuration. Both types of fiber array units are typically made from a precision-molded optical plastic or ceramic material and can have anywhere from a few to hundreds of fibers arranged in a specific pattern. The choice of FAU depends on the specific requirements of an application, such as the number of fibers, the arrangement of the fibers, the wavelength of light being used, and the coupling efficiency desired. Each die can have an associated AMS block associated with a portion of the OMIB it is coupled to and one or more transistors or supporting circuitry to route electrical signals to the transistors, or some other IC component.
OMIB 330 may further include one or more electrical interfaces (EIs). OIs and EIs may be affixed to a surface of the OMIB, either between the bridged dies 102 or offset in a region in the x or y direction where a die 102 does not extend. The EI has a function analogous to the OI, except it gives the OMIB the capability to transmit data to and from the dies via electrical connections instead of optical ones and can connect the external I/O block to the OMIB, for instance, via a wire from the EI to the external I/O block. Different types of electrical connections are possible including wires, redistribution layers (RDLs) and the like. The electrical connection typically transmits and receives data electrically across the electrical interconnection using known standards or bus protocols between the EI and any of the dies bridged by the OMIB or the EI and the external I/O block. The electrical pathways between the EI and the dies can be routed through the OMIB, through the substrate, or both (or in the case of an RDL through one of the layers of the OMIB and/or substrate).
A photonic path may be implemented in an optical transmission medium. The optical transmission medium may include a waveguide on a PIC, an optical fiber or other optical transmission medium (such as free space optics or glass-etched waveguide), or some combination of the foregoing. Examples of optical modulators include, but are not limited to, electroabsorption modulators (EAMs), micro-ring resonators, or any suitable optical component with sufficient thermal stability.
Light engine 570 transmits light via the fiber array unit FAU and grating coupler GC (or any other OI configured to receive light on an OI input and to pass the received light on an OI output) into splitter SP inside OMIB 530. Splitter SP distributes the light over two different photonic paths 531 and 532 towards modulator MOD1 and modulator MOD2. In some implementations, the splitter, or a splitter tree, distributes the light over more than two different photonic paths to feed additional modulators. A photonic path may be implemented with any suitable optical transmission medium, and may include a mixture of waveguides and fibers.
Modulator MOD1 modulates the light it receives from the splitter SP with information from driver DRV1, and transmit the modulated light to photodetector PD2 via photonic path 533. Photodetector PD2 converts the received light to an electrical signal for second die 520. Modulator MOD2 modulates light it receives from the splitter SP with information from driver DRV2, and transmit the modulated light to photodetector PD1 via photonic path 534. Photodetector PD1 converts the received light to an electrical signal for first die 510. Jointly with a serializer (not shown) in first die 510, driver DRV1, transimpedance amplifier TIA2, and a deserializer (not shown) in second die 520, modulator MOD1, photonic path 533, and photodetector PD1 form a data channel from first die 510 to second die 520.
OMIB 530, a photonic IC, includes a first interconnect region, a second interconnect region, and an offset region. The first interconnect region includes a bondpad pattern located over MOD1 and PD1 that matches a bondpad pattern on first die 510 located under DRV1 and TIA1, or is otherwise configured to form an electrical interconnection between the respective components. The second interconnect region includes a bondpad pattern located over PD2 and MOD2 that matches a bondpad pattern on second die 520 located under TIA2 and DRV2, or is otherwise configured to form an electrical interconnection between the respective components. The offset region, which is further illustrated in
Photonic paths 533 and 534 include waveguides or other suitable optical transmission media to carry the optical signals from a modulator to a photodetector. The modulators in OMIB 530 are coupled with drivers in the AMS parts of the first or second die via a copper pillar or other suitable electrical interconnect. The photodetectors in OMIB 530 are coupled with transimpedance amplifiers in the AMS parts of the first or second die via a copper pillar or other suitable electrical interconnect. Photonic paths in OMIB 530 may be unidirectional, so that a pair of photonic paths in opposite directions can be comprised in a single bidirectional information channel.
An electrical interconnect is shown as making a coupling (or abutted coupling) between elements in the AMS parts and the corresponding elements in OMIB 530. In one implementation, the interconnect is a copper pillar no longer than 2 millimeters. In other implementations, the electrical interconnects can be solder bumps that are formed of a material such as tin, silver, or copper. If solder bumps are used for the interconnects, then the solder bumps may be flip-chip bumps. In yet other implementations, the interconnects may be elements of a ball-grid array (BGA), pins of a pin grid array (PGA), elements of a land grid array (LGA), or some other type of interconnect. Generally, the interconnects may physically and electrically couple the AMS blocks to OMIB 530. For example, one or more of the interconnects may physically couple with, and allow electrical signals to pass between, pads of the dies and pads of substrate 540 and/or OMIB 530. The interconnects 525 may not have a uniform size, shape, or pitch. A finer pitch of interconnects may be desirable to allow a denser communication pathway between elements coupled to the OMIB. In implementations, the size, shape, pitch, or type of one or more of the interconnects may be different than depicted in the figures, or different than others of the interconnects. The specific type, size, shape, or pitch of the interconnects may be based on one or more factors such as use case, materials used, design considerations, and manufacturing considerations.
A light engine 970, which can be internal or external, provides light of multiple wavelengths (e.g., between 2 and 16 wavelengths), such as four wavelengths λb1, λb2, λb3, λb4, as shown, to OMIB 930. A splitter tree SPT (e.g., similar to that of
Although the implementation discussed above is directed to a photonic channel showing four optical links in one direction and a WDM multiplexer receiving four different wavelengths, in other implementations, two or more optical links and a WDM multiplexer receiving two or more different wavelengths may be used. The WDM demultiplexer would, accordingly, output two or more different wavelengths corresponding to these alternative implementations.
Using intra-OMIB and inter-OMIB photonic channels, e.g., as described above, generally including one or more links per direction, the processors in the EIC(s) in a single package can be connected into electro-photonic networks. The resulting network topology generally depends on the selection of pairs of dies that are coupled via an associated photonic channel; various example topologies are known in the art. Note that, while this document generally refers to bidirectional photonic channels, which, as compared with unidirectional photonic channels, result in network structures providing greater flexibility for implementing ML and other computational models, electro-photonic networks can in principle also be formed with unidirectional photonic channels, and such networks may retain any of the benefits discussed herein (e.g., power savings due to photonic data transfer over longer distances).
As previously stated, a photonic channel includes at least two unidirectional sets of one or more links, capable of making a bidirectional channel. Examples of such a channel include, but are not limited to, the photonic channel between two dies, when bridged by an OMIB and the photonic channel between an OI on an OMIB and an external device optical interface. The nature of the external device optical interface can vary so long as it has the optical capability to receive messages sent from the OMIB and/or send messages that can be received and used by the OMIB or any dies using the OMIB as a bridge.
The messages can be in the form of variably sized packets.
In one implementation, information is modulated at 56 Gb/s in a non-return-to-zero (NRZ) code, but more spectrally efficient modulation schemes such as PAM-4 or PAM-8 or higher-order pulse amplitude modulation may be used to allow higher-bandwidth and lower-latency links.
The AMS transmit and receive blocks can take an optical signal to the central region of either die (e.g., to a memory controller to access a memory in the central region) from any external device optical interface that is connected by an inter-OMIB link to the OMIB or from and AMS transmit and receive block that has an inter-OMIB connection within the bridge. The OI of each OMIB can also be connected by a fiber although this is not required. A first side of an AMS transmit block 1413 or an AMS receive block 1414 (e.g., the right side) is aligned with a first side (e.g., the right side) of the central region (e.g., central region 1412). The first side of the central region being proximate and/or touching a compute element 1411 such as a CPU, GPU, TPU and the like. A second side of the AMS transmit block 1413 or an AMS receive block 1414 (e.g., the left side) is aligned with the left side of the OMIB. The alignment of the sides is approximate and need not be exact but typically the alignment is in at least two dimensions to allow for abutment between optical and electrical elements in the OMIB and AMS blocks respectively.
As shown in the following, one OMIB can bridge four dies. For example, the OMIB is used to bridge dies both vertically and horizontally, which results in 4 interconnect regions on each OMIB to correspond to four AMS blocks on the respective dies. An OMIB in this arrangement may provide channels in six directions, including two horizontally, two vertically, and two diagonally.
1510—fabricating a bridge including a photonic link from a first interconnect region to a second interconnect region, wherein the photonic link includes a first electrical interconnect, a modulator coupled with the first electrical interconnect, an optical transmission medium coupled with the modulator, a photodetector coupled with the optical transmission medium, and a second electrical interconnect. In some implementations, the modulator is configured to be temperature stabilized by applying a stabilization voltage to the modulator, wherein the stabilization voltage is related to a die temperature, and wherein the stabilization voltage induces a change in an electrical absorption in the modulator.
1520—positioning the interconnect regions to enable an electrical interconnect and/or abutted coupling to AMS blocks in the dies.
1530—fabricating an intra-OMIB connection between the interconnect regions.
1540—fabricating an inter-OMIB connection between the two interconnect regions and an optical interface.
System 1600 may include one or more processing devices 1602. Processing device 1602 may include one or more digital signal processors (DSPs), application-specific integrated circuits (ASICs), central processing units (CPUs), graphics processing units (GPUs), tensor processing units (TPUs), AI accelerators, fixed-gate programmable arrays (FPGAs), load/store units (LDSUs), neural compute engines (NCEs), dot-product and/or convolution engines, server processors, or any other suitable processing devices. System 1600 may include a memory 1604, which may itself include one or more memory devices such as volatile memory, nonvolatile memory, flash memory, solid state memory, and/or a hard drive, including but not limited to: a random-access memory (RAM) device, (such as static RAM (SRAM) device, a magnetic RAM (MRAM) device, a resistive RAM (RRAM) device, or a conductive-bridging RAM (CBRAM) device), a logic device (e.g., an AND, OR, NAND, or NOR gate), A NAND Flash memory, a solid-state drive (SSD) memory, a NOR Flash memory, a CMOS memory, a thin film transistor-based memory, a phase change memory (PCM), a storage class memory (SCM), a magneto-resistive memory (MRAM), a resistive RAM, a DRAM, a high bandwidth memory (HBM), a DDR-based DRAM, a DIMM memory. In some implementations, the memory 1604 may include memory that shares a die with the processing device 1602. This memory may be used as cache memory and may include embedded dynamic RAM or spin transfer torque magnetic RAM.
In some implementations, system 1600 may include a communication chip 1612. For example, communication chip 1612 may be configured for managing wireless communications for the transfer of data to and from the device.
Communication chip 1612 may implement any of a number of wireless standards or protocols, including but not limited to Institute for Electrical and Electronic Engineers (IEEE) standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards (e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE) project along with any amendments, updates, and/or revisions (e.g., advanced LTE project, ultra-mobile broadband (UMB) project (also referred to as “3GPP2”), and others). IEEE 802.16 compatible Broadband Wireless Access (BWA) networks are generally referred to as WiMAX networks, an acronym that stands for Worldwide Interoperability for Microwave Access, which is a certification mark for products that pass conformity and interoperability tests for the IEEE 802.16 standards. Communication chip 1612 may operate in accordance with a Global System for Mobile Communication (GSM), General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network. Communication chip 1612 may operate in accordance with Enhanced Data for GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN (E-UTRAN). Communication chip 1612 may operate in accordance with Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Digital Enhanced Cordless Telecommunications (DECT), Evolution-Data Optimized (EV-DO), and derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. Communication chip 1612 may operate in accordance with other wireless protocols in other implementations. System 1600 may include an antenna 1622 to facilitate wireless communications and/or to receive other wireless communications (such as AM or FM radio transmissions).
In some implementations, communication chip 1612 may manage wired communications, such as electrical, optical, or any other suitable communication protocols (e.g., the Ethernet or USB). As noted above, the communication chip 1612 may include multiple communication chips. For instance, a first communication chip 1612 may be dedicated to shorter range wireless communications such as Wi-Fi or Bluetooth, and a second communication chip 1612 may be dedicated to longer-range wireless communications such as EDGE, GPRS, CDMA, WiMAX, LTE, EV-DO, or others. In some implementations, a first communication chip 1612 may be dedicated to wireless communications, and a second communication chip 1612 may be dedicated to wired communications.
System 1600 may include battery/power circuitry 1614. The battery power circuitry 1614 may include one or more energy storage devices (e.g., batteries or capacitors) and/or circuitry for coupling components of system 1600 to an external energy source (e.g., AC line power). System 1600 may include a display device 1606 (or corresponding interface circuitry, as discussed above). The display device 1606 may include any visual indicators, such as a heads-up display, a computer monitor, a projector, a touchscreen display, a liquid crystal display (LCD), a light-emitting diode display, a flat panel display, a virtual reality headset, an augmented reality headset, etc. System 1600 may include an audio output device 1608 (or corresponding interface circuitry, as discussed above). The audio output device 1608 may include any device that generates an audible indicator, such as speakers, headsets, earbuds, vibration elements, piezo crystals, etc. System 1600 may include an audio input device 1624 (or corresponding interface circuitry, as discussed above). The audio input device 1624 may include any device that generates a signal representative of a sound, such as microphones, microphone arrays, or digital instruments (e.g., instruments having a pickup or a musical instrument digital interface (MIDI) output).
System 1600 may include a positioning device 1618 (or corresponding interface circuitry), such as according to the global positioning system (GPS), Galileo, GLONASS, BeiDou, IRNSS, NavIC, and/or QZSS. The positioning device 1618 may be in communication with a satellite-based system and may receive a location of system 1600, as known in the art. System 1600 may include another output device 1610 (or corresponding interface circuitry, as discussed above). Examples of the other output device 1610 may include an audio codec, a video codec, a printer, a wired or wireless transmitter for providing information to other devices, or an additional storage device. System 1600 may include another input device 1620 (or corresponding interface circuitry, as discussed above). Examples of another input device 1620 include an accelerometer, a gyroscope, a compass, an image capture device, a keyboard, a cursor control device such as a mouse, a stylus, a touchpad, a bar code reader, a Quick Response (QR) code reader, any sensor, or a radio frequency identification (RFID) reader.
System 1600 may have any desired form factor, such as a handheld or mobile device (e.g., a cell phone, a smartphone, a tablet computer, a laptop computer, an Internet-of-Things (IoT) device, a netbook computer, an ultrabook computer, a mobile internet device, a music player, a personal digital assistant (PDA), an ultra-mobile personal computer, and others), a desktop electrical device, a server device or other networked computing component, a printer, a scanner, a monitor, a settop box, an entertainment control unit, a vehicle control unit, a digital camera, a digital video recorder, or a wearable electrical device. In some implementations, system 1600 may be any other electronic device that processes data.
The close spacing and abutment of an EIC and a PIC chiplet (less than 2 millimeters and often less than 50 microns) creates a thermal challenge for the PIC. Depending on the type of modulators and photodetectors used, the temperature range for operation within specifications (the operating temperature range) may be less than thirty degrees Celsius. However, the die temperature of an EIC can vary significantly more, depending on the ambient temperature, load conditions, supply voltage, and other factors. Also, the EIC die temperature can vary locally, potentially resulting in different temperatures for different devices on the PIC. The local die temperature of the EIC, when the PIC is mounted on it or vice versa, affects the local temperature of individual modulators and photodetectors on the PIC. Modulators and photodetectors, for example those based on a PIN diode, may have a limited operating temperature range. The inventors described earlier how the operating temperature range may be extended using bias control (Winterbottom et al., “Optical Multi-Die Interconnect Bridge (OMIB),” U.S. Pat. No. 11,835,777, issued Dec. 5, 2023). The present document describes how the operating temperature range may be extended using localized heating of modulators, photodetectors, and/or other devices. Controlled heating has been used for the wafer baking process (Sun et al., “Temperature Compensation System, Semiconductor Device and Temperature Compensation Method,” US 2024/0,222,167 A1) and for reliability testing (Yu et al., “On-Chip Heater Design and Control Methodology for Reliability Testing Applications Requiring Over 300° C. Local Temperatures”, IEEE Transactions on Device and Materials Reliability, Volume: 23, Issue 2, June 2023, pp. 233-240) but not for extension of a device's operating temperature range due to its relatively high power usage and its potential impact on reliability at high temperatures. However, the inventors have determined that in certain circumstances, for example when the EIC can be operated at a relatively low temperature, the power penalty and reliability impact can be limited. The ability to locally control the temperature of individual devices creates more uniform conditions, thereby further extending the ambient temperature range within which the PIC operates according to its specifications.
Modulator types include Mach-Zehnder interferometer (MZI), ring modulator, and electroabsorption modulator (EAM). Ring modulators have a very narrow temperature range (less than one degree Celsius), whereas MZI and EAM may have an operating range of more than thirty degrees Celsius. Both the modulator temperature and bias voltage may affect the frequency (wavelength) at which the modulator's efficiency peaks. The laser's wavelength may be unaffected, or differently affected, by these parameters. Thus, a change in temperature will result in a difference between the laser wavelength and the modulator's efficiency peak wavelength, thus affecting the modulation depth.
Implementations may include modulators that are inherently optimal over a desired temperature range. Alternatively, an implementation may provide temperature compensation including a temperature sensing or predicting capability. The temperature compensation may be fully incorporated in the PIC, or partially in the PIC and partially in one or more connecting circuits.
Photodetector types include photodiodes, such as those based on a PIN diode.
TE 1711 may include a temperature sensor, a temperature predictor, or both (a temperature predictor predicts EIC or PIC temperature based on a processor's load conditions known in its software or firmware). TE 1711 measures, estimates, and/or predicts the local temperature at nearby locations in PIC 1714, such as in photodetector 1715 and modulator 1716. In some implementations, TE 1711 is located less than two millimeters (2 mm) from photodetector 1715 and/or modulator 1716. In further implementations, TE 1711 is located less than fifty micron (50 μm) from photodetector 1715 and/or modulator 1716.
Driver 1713 may deliver a high-data-rate modulation signal to modulator 1716 for modulation of a photonic signal. Photodetector 1715 delivers an electric signal to amplifier 1712 that depends on a detected photonic signal. In most cases, the electric signal is a current, and amplifier 1712 amplifies this signal and converts it to a voltage. However, in some cases the electric signal may be a voltage, and in some cases amplifier 1712 is merely an amplifier delivering an output voltage or output current related to the detected photonic signal. TE 1711 may deliver slowly varying (compared to the data rate) temperature-dependent bias voltages or bias currents to photodetector 1715 and/or modulator 1716. The performance of photodetector 1715 and/or modulator 1716 is dependent on both the local temperature and the applied bias, so that it is possible to widen the operating temperature range by applying a bias whose effect on the device specifications compensates for the effect of the device temperature. In some implementations, TE 1711 includes a lookup table to translate the measured or predicted temperature to a temperature-compensating device bias voltage or current. In other implementations, TE 1711 applies a formula or a model to translate the measured or predicted temperature to a temperature-compensating device bias.
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Additionally, thermal controller 1721 may control local heating of photodetector 1715 by photodetector heater 1728 and/or local heating of modulator 1716 by modulator heater 1729. Again, thermal controller 1721 may directly provide power to photodetector heater 1728 and/or modulator heater 1729, or it may do so indirectly by determining power control signals for an external heater power source. By locally heating photodetector 1715 and/or modulator 1716, thermal controller 1721 can operate these devices closer to their optimal operating temperature so that when the ambient temperature is relatively low the devices can still operate according to their specifications. In some cases, the loop between temperature sensor 1723, thermal controller 1721, and photodetector heater 1728 or modulator heater 1729 may function similar to a thermostat. In further cases, an implementation limits the heater power provided to photodetector heater 1728 and/or modulator heater 1729 to prevent reliability issues and/or excessive dissipation.
EIC 1726 includes a device interface and PIC 1727 includes a first photonic device that is electrically coupled with the device interface and a first device heater. For example, the device interface may be amplifier 1712, the first photonic device may be photodetector 1715 and the first device heater may be photodetector heater 1728. In this case, amplifier 1712 is configured to receive a demodulated signal from photodetector 1715. In a second example, the device interface may be driver 1713, the first photonic device may be modulator 1716 and the first device heater may be modulator heater 1729. In this case, driver 1713 is configured to forward a modulation signal to modulator 1716.
The first device heater is located within two hundred to three thousand nanometers (200 to 3,000 nm) from the first photonic device. In some implementations, the PIC is electrically coupled with the EIC on a first side (e.g., the top of PIC 1727) and is configured to receive heater power from a second side opposite to the first side (e.g., the bottom of PIC 1727). More generally, a heater may be located above the photodetector or modulator, as drawn in
Temperature sensor 1723 measures the temperature of photodetector 1715 and/or modulator 1716 and communicates the measured temperature to thermal controller 1721. More generally, thermal controller 1721 is configured to receive a first sensor signal associated with a thermal condition in a region near a first photonic device (photodetector 1715 or modulator 1716). Temperature controller 1721 may include a microcontroller, dedicated logic circuits, configurable logic circuits, memory, and/or temperature sensor interface circuits. Package temperature sensor 1732 may measure the temperature of package 1730 (or another temperature of importance) and communicates the measured temperature to thermal controller 1721 via the signal interface built in package temperature sensor 1732, and a signal bus that traverses substrate 1731, and PIC 1727 into EIC 1726, where it reaches thermal controller 1721 via signal interface 1740. Temperature controller 1721 determines power control signals for electrical power to be delivered to photodetector heater 1728 and/or modulator heater 1729. Temperature controller 1721 communicates the power control signals to heater power source 1734 via signal interface 1740, the signal bus, and signal interface 1736. A power converter 1735 receives the power control signals from signal interface 1736 at its CTRL input, as well as supply power at its PWR IN input, and accordingly converts the supply power to heater power for photodetector heater 1728 and/or modulator heater 1729, which it outputs at its PWR OUT outputs. Electrical pathways in PCB 1733 and substrate 1731 carry the heater power to PIC 1727 where it reaches photodetector heater 1728 and/or modulator heater 1729. Photodetector heater 1728 and/or modulator heater 1729 heat(s) up to bring photodetector 1715 and/or modulator 1716 to the desired temperature. In a next feedback cycle, temperature sensor 1723 may measure if the desired temperature has been reached and update thermal controller 1721.
Similarly, based on the measurements of temperature sensor 1723, thermal controller 1721 may generate one or more bias control signals for the bias to be delivered to photodetector 1715 and/or modulator 1716. Temperature controller 1721 may communicate the bias control signals to bias source 1737 via signal interface 1740, the signal bus, and signal interface 1739. A power converter 1738 receives the bias control signals from signal interface 1739 at its CTRL input, as well as supply power at its PWR IN input, and accordingly converts the supply power to bias voltages and/or currents for photodetector 1715 and modulator 1716, which it outputs at its Bias OUT outputs. Electrical pathways in PCB 1733 and substrate 1731 carry the bias voltages and/or currents to PIC 1727 where the reach photodetector 1715 and/or modulator 1716.
Modulated light travels through waveguide 1755A into semiconductor waveguide 1751 which is, or includes, the intrinsic semiconductor material. A PD generally has no exit for photonic signals, so only waveguide 1755A has been drawn. Semiconductor waveguide 1751 has a tapered tip 1756A, for example made of polycrystalline silicon (or poly) to minimize light losses in the transition from waveguide 1755A. Semiconductor waveguide 1751 (and parts of anode 1752 and cathode 1753) may be made of germanium silicon (GeSi), for example. Anode 1752 is doped to have a shortage of free electrons (P-type semiconductor material) and cathode 1753 is doped to have an excess of free electrons (N-type semiconductor material).
The photodiode is zero-biased or reverse biased, that is, the anode is at the same voltage as or a lower voltage than the cathode, and when there is no light traveling into semiconductor waveguide 1751, only a leakage current known as the dark current flows between the cathode and the anode. When light enters semiconductor waveguide 1751, the current can strongly increase, depending on the optical power and on the photodiode bias. To capture a signal that is proportional to the optical power, the implementation must measure the fast or AC changes in the current.
In some implementations, photodetector 1715 comprises a material selected from one or more of germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), or a III-V material based on gallium arsenide (GaAs). In some implementations, photodetector 1715 comprises about 99% germanium and about 1% silicon (e.g., more than 99% germanium and less 1% silicon), and in some cases photodetector 1715 is composed of pure germanium.
Light that may be unmodulated travels through waveguide 1755A into semiconductor waveguide 1751 which is, or includes, the intrinsic semiconductor material, and out of semiconductor waveguide 1751 at the other end into waveguide 1755B. Semiconductor waveguide 1751 has a tapered tip 1756A, for example made of polycrystalline silicon (or poly) to minimize light losses in the transition from waveguide 1755A and similarly, semiconductor waveguide 1751 has a tapered tip 1756B to minimize light losses in the transition to waveguide 1755B. Semiconductor waveguide 1751 (and parts of anode 1752 and cathode 1753) may be made of germanium silicon (GeSi), for example. Anode 1752 is doped to have a shortage of free electrons (P-type semiconductor material) and cathode 1753 is doped to have an excess of free electrons (N-type semiconductor material).
The PIN diode is zero-biased or reverse biased, that is, the anode is at the same voltage as or a lower voltage than the cathode. Using the Franz-Keldysh effect, an implementation varies the optical absorption level of semiconductor waveguide 1751 by changing the voltage across the PIN diode. Thus, the PIN diode can use the voltage across the PIN diode (or the current through the diode) as a parameter to modulate the light that travels through semiconductor waveguide 1751. For example, in an implementation the cathode may receive an AC signal that has a swing of −1 to +1 V. To ensure that the PIN diode is always reverse biased, if the bias is applied to the anode, its highest value must be lower than −1 V, for example −1.2 V. For an implementation in which the signal is DC coupled and has a swing of 0 to 2 V, the maximum value of the bias voltage should be lower than −2 V, for example, −2.2 V.
In some implementations, the modulator 1716 comprises a material selected from one or more of germanium, silicon, an alloy of germanium, an alloy of silicon, a III-V material based on indium phosphide (InP), and a III-V material based on gallium arsenide (GaAs). In some implementations, modulator 1716 comprises about 99% germanium and about 1% silicon (e.g., more than 99% germanium and less 1% silicon), and in some implementations modulator 1716 comprises pure germanium.
Many variations of the EAM and photodiode designs are possible, and shapes and sizes mentioned here are idealized examples. Materials may vary between implementations, and thicknesses and cross-sectional shapes of layers may vary because the etching process doesn't follow precise orthogonal plans. All such variations are within the scope and ambit of this disclosure.
1761—In a temperature sensor, measuring a sensor temperature related to the device temperature of photodetector 1715 and/or modulator 1716. The temperature sensor may be temperature sensor 1723 which is included in PIC 1727, package temperature sensor 1732 which may be mounted on substrate 1731, a temperature sensor included in EIC 1726, a temperature sensor mounted on or included in PCB 1733, or any other temperature sensor that can measure a temperature that is related to the device temperature.
1762—Communicating the sensor temperature to thermal controller 1721. Some temperature sensors (e.g., temperature sensor 1723) may communicate the sensor temperature directly as an analog or digital signal, whereas other temperature sensors (e.g., package temperature sensor 1732) may communicate the temperature via a signal bus, such as an SPI bus or 12° C. bus.
1763—In thermal controller 1721, the implementation determines if the sensor temperature is below a target temperature. For example, modulator 1716 may have a target temperature of 85 degrees Celsius, which may be the top of its operating temperature range or it may be a temperature at which its specifications are optimal.
1764—Based on determining that the sensor temperature is below the target temperature, the implementation generates a power control signal and communicates the power control signal to a heater power source to generate heater power. It applies the heater power to a device heater. For example, thermal controller 1721 determines that the sensor temperature measured by temperature sensor 1723 is 10 degrees below the target temperature of 85 degrees Celsius. Temperature controller 1721 generates a power control signal that includes an instruction to generate heater power proportional to a temperature difference of 10 degrees Celsius. Temperature controller 1721 communicates the power control signal via signal interface 1740 and signal interface 1736 to heater power source 1734. Power converter 1735 in heater power source 1734 converts supply power into heater power according to the instruction in the power control signal, and the implementation forwards the heater power to photodetector heater 1728 and/or modulator heater 1729. Photodetector heater 1728 locally raises the temperature for photodetector 1715 and/or modulator heater 1729 locally raises the temperature for modulator 1716, so that in a next cycle of measuring temperature sensor 1723 measures a sensor temperature of only 8 degrees below the target temperature. In this example, the implementation may act as a non-intermittent thermostat. By heating the device when it is below its target temperature, the implementation effectively extends its operating temperature range downward.
Similarly, some implementations may also vary device bias voltages to extend the operating temperature range downward.
1771—Receiving temperature information. For example, thermal controller 1721 may receive temperature information from temperature sensor 1723, package temperature sensor 1732, or from any other information source that measures, predicts, and/or estimates the temperature of photodetector 1715 and/or modulator 1716.
1772—Using the temperature information for a table address to find heater power control data. For example, the temperature information may be included in a binary number. An implementation may use the binary number's bits, or a part of its bits, as the row address for a memory that stores the table. Columns of the memory may include the heater power control data. The heater power control data may include information whether the implementation must use the heater, and, if so, the level heater power to be used. Another implementation may use the binary number in a formula or in a model to determine the heater power control data.
1773—Using the heater power control data to set the heater power level and applying the heater power level to the heater. An implementation may use photodetector heater 1728 and/or modulator heater 1729. Other implementations may other heaters, for example a heater situated in the PIC but not directly above photodetector 1715 or directly above modulator 1716. The method may return to 1771 for a next cycle.
Some modulators can provide stable operation over a wide temperature range of modulation for optical components, for example when incorporated into an OMIB, even without the addition of temperature compensation. Modulators may utilize the Franz-Keldysh effect for electrically induced changes in optical absorption. A variety of materials may be used in the modulators, including germanium and its alloys, silicon and its alloys, III-V materials, such as those based on indium phosphide (InP) or gallium arsenide (GaAs). In one or more implementations, the thermally stable optical modulator uses a quantum-confined stark effect (QCSE) for an electrically induced change in an optical absorption. One or more implementations described herein involve chip hardware including features and functionality that provide a thermally stable optical modulation element(s) coupled to electronic element(s) (e.g., a driver in an AMS transmit block). In one or more implementations, the hardware is an apparatus that includes an electronic-integrated circuit (EIC) and a photonic-integrated circuit (PIC). The PIC may be electrically interconnected in a coupling or an abutted coupling with the EIC. Each of the transmit units may include a thermally stable optical modulator in a portion that resides in the PIC. The data may be moved optically in the PIC via an optical carrier between one of the thermally stable optical modulators in a first portion of the OMIB and one of the receive units in or interconnected with a second portion of the OMIB. In one or more implementations, a thermally stable optical modulator operates in a temperature range larger than thirty degrees Celsius.
Although the description has been described with respect to specific implementations thereof, these specific implementations are merely illustrative, and not restrictive. The description may reference specific structural implementations and methods and does not intend to limit the technology to the specifically disclosed implementations and methods. The technology may be practiced using other features, elements, methods and implementations. Implementations are described to illustrate the present technology, not to limit its scope, which is defined by the claims. Those of ordinary skill in the art recognize a variety of equivalent variations on the description above.
For example, many examples in this document couple a fiber to a photonics IC using a grating coupler. However, many of the implementations work well using other means for optical interfacing between a fiber and a photonic IC, such as described with reference to
All features disclosed in the specification, including the claims, abstract, and drawings, and all the steps in any method or process disclosed, may be combined in any combination, except combinations where at least some of such features and/or steps are mutually exclusive. Each feature disclosed in the specification, including the claims, abstract, and drawings, can be replaced by alternative features serving the same, equivalent, or similar purpose, unless expressly stated otherwise.
Although the description has been described with respect to specific implementations thereof, these specific implementations are merely illustrative, and not restrictive. For instance, many of the operations can be implemented on a printed circuit board (PCB) using off-the-shelf devices, in a System-on-Chip (SoC), application-specific integrated circuit (ASIC), programmable processor, a coarse-grained reconfigurable architecture (CGRA), or in a programmable logic device such as a field-programmable gate array (FPGA), obviating the need for at least part of any dedicated hardware. Implementations may be as a single chip, or as a multi-chip module (MCM) packaging multiple semiconductor dies in a single package. All such variations and modifications are to be considered within the ambit of the disclosed technology the nature of which is to be determined from the foregoing description.
Any suitable technology for manufacturing electronic devices can be used to implement the circuits of specific implementations, including CMOS, FinFET, BiCMOS, bipolar, JFET, MOS, NMOS, PMOS, HBT, MESFET, etc. Different semiconductor materials can be employed, such as silicon, germanium, SiGe, GaAs, InP, GaN, SiC, graphene, etc. Circuits may have single-ended or differential inputs, and single-ended or differential outputs. Terminals to circuits may function as inputs, outputs, both, or be in a high-impedance state, or they may function to receive supply power, a ground reference, a reference voltage, a reference current, or other. Although the physical processing of signals may be presented in a specific order, this order may be changed in different specific implementations. In some specific implementations, multiple elements, devices, or circuits shown as sequential in this specification can be operating in parallel.
Different integration technologies can be used for the PIC, such as silicon photonics, InP, silicon nitride, hybrid and heterogeneous integration technologies, etc. Implementations may use different technologies for optical modulators, including Mach-Zehnder, microring resonator, SiGe electroabsorption modulator, Franz-Keldysh electroabsorption modulators, a quantum-confined Start effect (QCSE) electroabsorption modulator, a quantum well modulator (CQW), etc. Different alternative layouts can be employed for an AWGR implementation, such as a combination of interconnected multiplexers and demultiplexers, echelle grating structures, etc. PICs may operate at any wavelength band. Any type of laser source can be employed, like distributed feedback lasers, laser diodes, hybrid integrated InP lasers, multiwavelength laser sources, microcomb light generator sources, etc. Different technologies can be implemented for photodiodes, such as SiGe electroabsorption photodiodes, InP photodiodes, avalanche photodiodes, etc.
Specific implementations may be implemented by using a programmed general-purpose digital computer, application-specific integrated circuits, programmable logic devices, field-programmable gate arrays, optical, chemical, biological, quantum or nanoengineered systems, etc. Other components and mechanisms may be used. In general, the functions of specific implementations can be achieved by any means as is known in the art. Communication, or transfer, of data may be wired, wireless, optical, or by any other means.
It will also be appreciated that one or more of the elements depicted in the drawings/figures can also be implemented in a more separated or integrated manner, or even removed or rendered as inoperable in certain cases, as is useful in accordance with a particular application.
Thus, while specific implementations have been described herein, latitudes of modification, various changes, and substitutions are intended in the foregoing disclosures, and it will be appreciated that in some instances some features of specific implementations will be employed without a corresponding use of other features without departing from the scope and spirit as set forth. Therefore, many modifications may be made to adapt a particular situation or material to the essential scope and spirit.
This application claims priority from U.S. provisional patent application Ser. No. 63/616,430, entitled “Photonic Interconnect Platform for Memory and Compute,” filed on Dec. 29, 2023. This patent is related to U.S. patent application Ser. No. 18/911,820, entitled “Photonic ICs with Photodiode and Modulator Temperature Compensation and Methods Therefor,” filed on Oct. 10, 2024; U.S. patent application Ser. No. 18/123,083, entitled, “OPTICAL MULTI-DIE INTERCONNECT BRIDGE (OMIB)”, filed on Mar. 17, 2023, now USP 11,835,777; U.S. patent application Ser. No. 18/742,028, filed on Jun. 13, 2024; U.S. patent application Ser. No. 18/243,474, filed Sep. 7, 2023, now USP 12,124,095; U.S. patent application Ser. No. 18/376,474, filed Oct. 4, 2023; International Patent Application No. PCT/US23/15467, filed Mar. 17, 2023; U.S. patent application Ser. No. 18/751,021,filed on Jun. 21, 2024; U.S. patent application Ser. No. 18/751,086, filed on Jun. 21, 2024; U.S. patent application Ser. No. 18/751,101, filed on Jun. 21, 2024; U.S. patent application Ser. No. 18/751,105, filed on Jun. 21, 2024; U.S. patent application Ser. No. 18/757,084, filed on Jun. 27, 2024; and U.S. patent application Ser. No. 18/757,182; filed on Jun. 27, 2024. Each publication, patent, and/or patent application mentioned in this specification is herein incorporated by reference in its entirety to the same extent as if each individual publication and/or patent application was specifically and individually indicated to be incorporated by reference.
| Number | Date | Country | |
|---|---|---|---|
| 63616430 | Dec 2023 | US |
