Patent Grant
8973526
The present invention relates to a plasma deposition apparatus and a plasma deposition method, and in particular, to a plasma deposition apparatus and a plasma deposition method that deposits a material, such as diamond, on a substrate.
A known microcrystalline diamond (hereinafter, referred to as “MCD”) thin film synthesis apparatus is used to synthesize a nanocrystalline diamond (hereinafter, referred to as “NCD”) thin film. In this case, however, the synthesis parameters for the NCD thin file are employed to be distinct from the synthesis parameters for the MCD thin film. Due to the distinct synthesis parameters employed, stability and uniformity may be markedly deteriorated. Accordingly, the known synthesis apparatus and process need to be considerably changed.
A microwave plasma CVD method or a hot filament CVD method is hitherto representatively used to deposit the MCD thin film and the NCD thin film. The microwave plasma CVD method has problems in that it is hard to form a large-area thin film and to handle a microwave. In the hot filament method, a simple thermal decomposition method is used. Accordingly, the hot filament method is economic in view of ease of forming a large-area thin film and a simple structure. However, since a filament is used, inconvenience may be caused, and impurities may be introduced. In addition, the thermal decomposition method has problems against the plasma method. Therefore, there is a need for a new synthesis method to overcome the drawbacks inherent in the related art.
The invention has been finalized in order to overcome the drawbacks inherent in the above-described plasma method, and it is an object of the present invention to provide a plasma deposition apparatus that deposits a material, such as diamond, on a substrate, such as a semiconductor substrate.
It is another object of the present invention to provide a plasma deposition method that deposits a material, such as diamond, on a substrate, such as a semiconductor substrate.
According to a first aspect of the present invention, a plasma deposition apparatus includes: a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk; an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate; and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.
According to a second aspect of the present invention, there is provided a plasma deposition method using a plasma deposition apparatus, the plasma deposition apparatus including an anode assembly, which includes a substrate holder having an externally operable shutter mounted thereon, a substrate being mounted in an inner space below the shutter, a cathode assembly, and a reactor. The plasma deposition method includes the steps of: closing the shutter to separate the substrate from plasma so as to prevent electric charges from being accumulated on the substrate, and heating-up the substrate holder by the plasma and an anode glow, such that the substrate is indirectly heated; and if the substrate restores conductivity after the heating-up is completed, opening the shutter to gradually expose the substrate to the anode glow and start to deposit a thin film.
According to a third aspect of the present invention, a plasma deposition apparatus includes a cathode assembly, an anode assembly, and a reactor. The anode assembly includes a substrate holder that has an externally operable shutter mounted thereon, a substrate being mounted in an inner space below the shutter, a support that separably supports the substrate holder by a self weight and is electrically grounded, and an anode holder that moves up and down independently from the support and comes into thermal contact with the substrate holder when moving up.
According to a fourth aspect of the present invention, there is provided a plasma deposition method using a plasma deposition apparatus, the plasma deposition apparatus including an anode assembly, a cathode assembly, and a reactor, and the anode assembly including a substrate holder having an externally operable shutter mounted thereon, a substrate being mounted in an inner space below the shutter, a support separably supporting the substrate holder by a self weight and being electrically grounded, and an anode holder moving up and down independently from the support and coming into thermal contact with the substrate holder when moving up. The plasma deposition method includes the steps of: in a state where the anode holder moves down to be separated from the substrate holder and the shutter is closed, performing a heating-up including igniting plasma and then gradually increasing a discharge current, a discharge voltage, and a gas pressure; and if the substrate restores conductivity after the heating-up, opening the shutter to gradually expose the substrate to an anode glow and start to deposit a thin film, and moving up the anode holder to bring the anode holder into thermal contact with the substrate holder, which is separated from the support.
According to the aspects of the present invention, a crack can be prevented from occurring in the surface of the cathode formed of a high melting point metal when a material, such as diamond, is deposited by a DC (discharge) plasma deposition process.
In addition, when a semiconductor substrate, such as silicon, is used, the semiconductor substrate can be prevented from being damaged, thereby depositing a uniform and undamaged thin film.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the embodiments of the present invention, detailed description of known structures and functions incorporated herein will be omitted when it may make the subject matter of the present invention unclear.
As a synthesis and deposition method of an MCD thin film and an NCD thin film, a direct-current (DC) plasma deposition apparatus may be used.
A disk formed of a high melting point metal, such as tungsten, is used as a cathode disk 3 that comes into contact with plasma. The cathode disk 3 is coupled to a cathode holder 1 using bolts and nuts 2 via internal screw holes 4 in the cathode disk 3. The cathode holder 1 is formed of a material having a good heat transfer characteristic, such as copper, and is cooled by cooling water. In
Meanwhile, if the cathode disk 3 formed of a material having high brittleness is fixed in the above-described manner, when the cathode disk 3 is used for a long time, a minute crack may occur in the surface of the cathode disk 3, and solid carbon may be formed in the crack. The solid carbon may keep remain without being completely removed during a cleaning process after deposition. The residual solid carbon may cause an arc, and thus the substrate, the deposited film, and the anode surface may be damaged.
The reason why the crack occurs in the surface of the cathode disk 3 will now be described in detail.
When the cathode disk 3 is at room temperature, a deposition process starts. A voltage is applied between the cathode disk 3 and the substrate 6, and a reactive gas is introduced into an inter-electrode space via the inlet port 22. Then, an appropriate vacuum state of 1 Torr or less is kept by vacuum pumping (not shown), and plasma is ignited. During a heat-up process, after the plasma is ignited, a discharge current, a discharge voltage, and a gas pressure within the reactor start to be gradually increased. If the plasma starts to emit light in the inter-electrode space (i.e., a space between the cathode disk 3 and the substrate 6 in
In summary, when the cathode is used for a long time, a crack occurs in the cathode disk 3, and solid carbon is formed in the crack. The solid carbon in the crack is rarely cleaned and causes an electrical arc each time the process is performed, and as a result, the substrate and the thin film may be damaged. That is, if the cathode disk 3 is formed of tungsten, since tungsten has high melting point and hardness, it is inactive to hydrogen and nitrogen, while since it has low toughness, a crack may easily occur.
In addition, the high melting point metal, such as, tungsten, for the cathode disk 3 is hard to be mechanically processed and has high brittleness. Accordingly, when each of the internal screw holes 4 is formed, a minute crack may easily occur around the hole. The crack may gradually grow if the deposition process is repeatedly performed and then the thermal stress is repeatedly applied, and as a result, it may spread over the cathode disk 3. This phenomenon may be accelerated if the surface of the cathode disk 3 is carbonized during the deposition process and has higher brittleness.
Therefore, there is a need for a new technology that can overcome the above problems.
In the present invention, when the cathode disk is mounted on the cathode holder, amounting structure that does not suppress but freely allows the thermal expansion of the cathode disk is used to overcome the drawbacks in the above-described DC plasma deposition apparatus. According to the present invention, a cathode disk mounting structure that does not limit the thermal expansion of the cathode in the radial direction and the thickness direction is used, thereby preventing a crack from occurring in the cathode disk.
Referring to
The cathode assembly 110 includes a cathode disk 111, and a water-coolable cathode holder 113 that supports the cathode disk 111. The cathode assembly 110 is mounted at a lower portion of the reactor 130.
The anode assembly 120 is mounted at an upper portion of the reactor 130. The anode assembly 120 includes a water-coolable anode holder 121, a substrate 123 that is mounted on the anode holder 121 to serve as an anode, a substrate holder 125 that mounts and supports the substrate 123, and a vacuum suction line 127 that passes through the anode holder 121 and the substrate holder 125, and forms a vacuum absorption force at a contact surface of the substrate holder 125 and the substrate 123, and a contact surface of the anode holder 121 and the substrate holder 125. In
According to the first embodiment of the present invention, since the cathode assembly 110 is mounted at the lower portion of the reactor 130, and the anode assembly 120 is mounted at the upper portion of the reactor 130, the cathode disk 111 comes into thermal contact with the cathode holder 113 by its self weight, without needing an additional mechanism that fixes the cathode disk 111.
Therefore, it is not necessary to form screw holes for fixing the cathode disk 111, and thus a minute crack does not occur. In addition, since the thermal expansion is not suppressed, compared with a case where the cathode disk is fixed by the bolts and nuts, thermal stress is not generated, and thus no crack occurs.
Particularly, when a disk formed of a high melting point metal, such as tungsten, is used as the cathode disk 111 that is in contact with the plasma, since tungsten has high specific gravity, the cathode disk 111 sufficiently comes into thermal contact with the cathode holder 113 by its self weight and is then sufficiently cooled.
Referring to
The cathode assembly 210 is mounted at the lower portion of the reactor 230. The cathode assembly 210 includes a cathode disk 211, a water-coolable cathode holder 213 that supports the cathode disk 211, a thin antifriction plate 215 that is formed of graphite to reduce a frictional force at a contact surface of the cathode disk 211 and the cathode holder 213 during thermal expansion of the cathode disk 211, and a vacuum suction line 217 that is formed to pass through the cathode holder 213 and the antifriction plate 215, and forms a vacuum absorption force at a contact surface of the cathode disk 211 and the antifriction plate 215, and a contact surface of the antifriction plate 215 and the cathode holder 213.
The anode assembly 220 is mounted at the upper portion of the reactor 230. The anode assembly 220 includes a water-coolable anode holder 221, a substrate 223 that is mounted on the anode holder 221 to serve as an anode, a substrate holder 225 that mounts and supports the substrate 223, and a vacuum suction line 227 that passes through the anode holder 221 and the substrate holder 225, and forms a vacuum absorption force at a contact surface of the substrate holder 225 and the substrate 223, and a contact surface of the anode holder 221 and the substrate holder 225. In
According to the second embodiment of the present invention, similarly to the first embodiment, since the cathode assembly 210 is mounted at the lower portion of the reactor 230, and the anode assembly 220 is mounted at the upper portion of the reactor 230, the cathode disk 211 comes into thermal contact with the cathode holder 213 by its self weight. In addition, to improve thermal contact between the cathode disk 211 and the cathode holder 213, a vacuum chuck method using the vacuum suction line 217 is employed to support the cathode disk 211 on the cathode holder 213 by an absorption force, such that a degree of thermal contact can be controlled. During the deposition process, the pressure of the reactive gas within the reactor 230 is maintained at about 100 to 400 Torr. Due to a difference between the vacuum and the pressure of the reactive gas within the reactor 230, a sufficient vacuum absorption force is obtained.
In addition, the degree of vacuum within the vacuum suction line 217 is controlled to adjust the vacuum absorption force between the cathode disk 211, the antifriction plate 215, and the cathode holder 213, thereby controlling the temperature of the cathode disk 211. This is because that cathode holder 213 is cooled by cooling water and in turn indirectly cools the cathode disk 211 that is in contact therewith. That is, the temperature of the cathode changes according to the degree of thermal contact between the cathode holder 213 and the cathode disk 211. When the thickness and diameter of the cathode disk 211 are 20 mm and 130 mm, respectively, and plasma power is about 20 kW, the temperature of the cathode may change by about 150° C. to 300° C. by controlling the vacuum absorption force.
During the thermal expansion of the cathode disk 211, the antifriction plate 215 that is used to reduce the frictional force at the contact surface of the cathode disk 211 and the cathode holder 213 is provided with vacuum grooves on both surfaces thereof to form the vacuum absorption force over the entire surface. Alternatively, the antifriction plate 215 may be removed. In this case, the vacuum suction line 217 may be formed to pass through the cathode holder 213 and forms the vacuum absorption force at the contact surface of the cathode disk 211 and the cathode holder 213. However, if the antifriction plate 215 is removed, the frictional force between the cathode holder 213 and the cathode disk 211 increases and then limit free thermal expansion of the cathode disk 211. Accordingly, the antifriction plate 215 is preferably provided.
According to the first or second embodiment of the present invention, the substrate 123 or 223 should be mounted on the anode assembly 120 or 220 that is mounted at the upper portion of the reactor 130 or 230. For this reason, the vacuum suction line 127 or 227 is formed to pass through the anode holder 121 or 221 and the substrate holder 125 or 225, and forms the vacuum absorption force at the contact surface of the substrate holder 125 or 225 and the substrate 123 or 223, and the contact surface of the anode holder 121 or 221 and the substrate holder 125 or 225.
According to a third embodiment of the present invention, the substrate holder 125 or 225 may be mechanically fixed to the anode holder 121 or 221, and the vacuum absorption force may be formed only at the contact surface of the substrate 123 or 223 and the substrate holder 125 or 225 to support the substrate 123 or 223. In this connection, to reduce frictional resistance at the contact surface of the substrate 123 or 223 and the substrate holder 125 or 225, a thin antifriction plate (not shown) formed of graphite is preferably inserted between the substrate 123 or 223 and the substrate holder 125 or 225. In this case, similarly to the second embodiment, the antifriction plate is provided with vacuum grooves on both surfaces thereof to distribute the vacuum absorption force over the entire surface of the antifriction plate.
Here, the width and depth of each of the vacuum grooves needs to be limited to predetermined values or less. If the width of the vacuum groove is too large, the temperature of the silicon substrate rises at contact portions with the vacuum grooves higher than at other portions, which makes it difficult to maintain a uniform temperature.
The vacuum absorption force by the vacuum suction line is generally used to lift an object. In this case, it is not necessary to cool the object. Therefore, the vacuum groove can be made sufficiently wide and deep for allowing the vacuum to be well transferred.
Meanwhile, when a temperature needs to be maintained by appropriate cooling in a state where a substrate with low thermal conductivity, such as a semiconductor silicon wafer, is absorbed by a vacuum chuck, as shown in
The DC plasma deposition apparatus according to the fourth embodiment of the present invention includes a cathode assembly 410 and an anode assembly 420 that are provided to face each other, and a reactor 430 that applies a potential difference between opposing surfaces of the cathode assembly 410 and the anode assembly 420 under a vacuum state to form plasma of a raw gas.
The cathode assembly 410 is mounted at an upper portion of the reactor 430. The cathode assembly 410 includes a cathode disk 411, a water-coolable cathode holder 413 that supports the cathode disk 411, and a thin antifriction plate 415 that is formed of graphite to reduce a frictional force at a contact surface of the cathode disk 411 and the cathode holder 413 during thermal expansion of the cathode disk 411. In addition, the cathode assembly 410 further includes a vacuum suction line 417 that is formed to pass through the cathode holder 413 and the antifriction plate 415, and forms a vacuum absorption force at a contact surface of the cathode disk 411 and the antifriction plate 415, and a contact surface of the antifriction plate 415 and the cathode holder 413.
The anode assembly 420 is mounted at a lower portion of the reactor 430. The anode assembly 420 includes a water-coolable anode holder 421, a substrate 423 that is mounted on the anode holder 421 to serve as an anode, and a substrate holder 425 that mounts and supports the substrate 423. In
The fourth embodiment of the present invention is different from the second embodiment of the present invention shown in
According to the first to fourth embodiments of the present invention, the factors that cause the arc, such as a crack in the cathode surface, solid carbon in the crack, and electric field concentration at a sharp edge of the crack, are all removed.
Meanwhile, when a silicon substrate is used as the substrate to be mounted on the anode holder, during a heat-up process in which a discharge current, a discharge voltage, and a gas pressure within the reactor are gradually increased after plasma is ignited within the reactor, the surface of the silicon substrate may be slightly damaged. The damaged region that is generated during the heat-up process is in an approximately circle shape, and the diameter thereof is about 1 mm or less. In addition, the degree of damage is slight, and the surface damage depth is merely about several microns.
The arc damage due to the cathode damage or contamination occurs during the deposition process or the heat-up process, and a position where the arc damage occurs is randomly distributed over the substrate surface, while the damages due to other factors constantly occur during the heat-up process and are mainly observed at a central portion of the substrate. These damages occur when the substrate surface is slightly and instantaneously damaged due to concentration of a weak arc or an instantaneous current.
In the present invention, there is suggested a new method that prevents the damage in the central portion of the substrate.
A semiconductor silicon substrate that is widely used as an NCD thin film or diamond thin film deposition substrate is an insulator at room temperature. Electrical resistance of the silicon substrate decreases as the temperature rises, and at about 600° C. or more, the silicon substrate becomes a conductor. Accordingly, the silicon substrate is kept at 600° C. or more to prevent charge accumulation on the substrate and accordingly occurrence of the arc. Therefore, before the plasma is ignited, the silicon substrate is in the state as shown in
Even if the plasma is ignited, since the substrate 423 is an insulator, an anode glows is not formed on the surface of the substrate 423, and as shown in
During the heat-up process that gradually increases the gas pressure within the reactor, the discharge voltage, and the discharge current to the final deposition conditions after the plasma is ignited, if the temperature uniformly rises over the entire substrate 423, the entire substrate 423 becomes a conductor at a predetermined temperature. Actually, however, the temperature of the substrate 423 may be partially ununiform. As shown in
Accordingly, as shown in
If the temperature further rises, as shown in
According to a fifth embodiment of the present invention, to prevent the accumulated charges from being concentrated on the narrow conductor region all at once to become conduction, as shown in
Referring to
For example, it is assumed that, when the substrate 523 is uniformly cooled, the temperature of the substrate 523 is higher in its central portion, as shown in
Although the spacer 529 may be in direct contact with the substrate 523, the spacer 529 may be in indirect contact with the substrate 523 via the substrate holder 525, as shown in
As described above, according to the fifth embodiment of the present invention, the spacer is provided at the contact surface of the substrate holder and the anode holder to control the temperature distribution of the substrate, thereby uniformly increasing the temperature of the substrate 523. In comparison
According to the sixth embodiment of the present invention, an externally operable shutter 609 is mounted on a substrate holder 625 of an anode assembly 620. That is, the shutter 609 is mounted on the substrate holder 625, and a substrate 623 is loaded into an inner space below the shutter 609.
During the heat-up process, as shown in
According to a seventh embodiment of the present invention, a DC plasma deposition apparatus includes a cathode assembly 710 and an anode assembly 720 that are provided to face each other, and a reactor (not shown) that applies a potential difference between opposing surfaces of the cathode assembly 710 and the anode assembly 720 under a vacuum state to form plasma of a raw gas.
The cathode assembly 710 is mounted at an upper portion of the reactor. The cathode assembly 710 includes a cathode disk 711, a water-coolable cathode holder 713 that supports the cathode disk 711, a thin antifriction plate 715 that is formed of graphite to reduce a frictional force at a contact surface of the cathode disk 711 and the cathode holder 713 during thermal expansion of the cathode disk 711, and a vacuum suction line 717 that is formed to pass through the cathode holder 713 and the antifriction plate 715, and forms a vacuum absorption force at a contact surface of the cathode disk 711 and the antifriction plate 715, and a contact surface of the antifriction plate 715 and the cathode holder 713.
The anode assembly 720 is mounted at a lower portion of the reactor. The anode assembly 720 includes a substrate holder 725 that has an externally operable shutter 709 mounted thereon, a support 708 that supports the substrate holder 725 separately from an anode holder 721, and the anode holder 721 that moves up and down independently from the support 708. A substrate 723 is mounted on the substrate holder 725. Specifically, the substrate 723 is mounted in an inner space below the shutter 709. The substrate holder 725 is formed of a conductive high melting point metal.
The shutter 709 of the substrate holder 725 is supported to face the cathode disk 711. However, since the substrate holder 725 is simply placed on the support 708 and supported by its self weight, it can be easily separated. The support 708 is electrically grounded.
The support 708 brings the substrate holder 725 into electrical contact with the bottom surface of the reactor by a metal bar, and flows out a current supplied from the plasma to the ground in a state shown in
According to the seventh embodiment of the present invention, during the heat-up process, the substrate and the substrate holder are increasingly heated. The heat-up process is a process that gradually increase the discharge current, the discharge voltage, and the gas pressure within the reactor to the deposition conditions from the levels much lower than the deposition conditions. The optimum stability of the DC plasma is obtained when the temperature of the anode and cathode is maintained at an optimum temperature, for example, hundreds ° C. During the heat-up process, the temperature of the electrode gradually rises from the room temperature to the optimum temperature, and thus the heat-up process is as short as possible.
Referring to
Subsequently, while the discharge voltage, the discharge current, and the gas pressure within the reactor are gradually increased, the substrate holder 725 is exposed to the plasma and then heated. At this time, the substrate 723 that is mounted in the substrate holder 725 is directly heated by the substrate holder 725. Here, the substrate holder 725 is supported by the support 708 separately from the anode holder 721, and the anode holder 721 is water-cooled. During the heat-up process, since the substrate holder 725 and the anode holder 721 are separated from each other, a heat loss of the substrate holder 725 and the substrate 723 is minimized, thereby maximizing a temperature rising speed.
For example, when the substrate holder 725 is in contact with the anode holder 721, according to the related art, it takes a lot of time, for example, 20 minutes, until the temperature of the substrate rises to 750° C. At this time, the required discharge voltage and discharge current are 400 volts and 45 amperes, respectively. In contrast, according to the seventh embodiment of the present invention, on the same conditions, the time until the substrate reaches the same temperature is reduced to about less than 5 minutes. In addition, the discharge current is only about 20 amperes or less.
Referring to
In the known microwave plasma CVD method, an additional heater is provided in the anode holder to control the temperature of the substrate. In this case, however, the heater may absorb the microwaves, and then overheated and destroyed. In addition, the structure becomes complicated to mount the heater, and thus maintenance and repair are hard to be performed. Furthermore, since the heater is inserted between the anode holder and the substrate holder, on a high-power deposition condition on which high heating is performed by the plasma, the heater may disturb cooling, and then overheating may occur. According to the seventh embodiment of the present invention, the temperature of the substrate can be simply controlled without causing the above-described problems, and the conductivity of the substrate can be prevented from being damaged.
As such, while the substrate 723 rapidly restores the conductivity by indirect heating, the charge accumulation is blocked since the substrate 723 is separated from the plasma by the shutter 709. Therefore, the substrate 723 can be prevented from being damaged when the conduction path is formed. In addition, if the heating sufficiently progresses, and the discharge current and the discharge voltage reach sufficient high values, the substrate 723 that is indirectly heated by the sufficiently heated substrate holder 725 reaches a sufficient temperature. After the semiconductor substrate 723 restores the conductivity, as shown in
Here, the shutter 709 of the substrate holder 725 may have various shapes, for example, a wing shape and an iris shape, according to an opening/closing mechanism, and may be opened/closed by an external operation. The wing-shaped shutter is designed such that, when it is opened by an external operation, a distance between the shutter 709 and the cathode disk 711 is longer than a distance between the substrate 723 and the cathode. If not so, the plasma may be continuously formed between the cathode and the shutter 709, as well as between the substrate 723 and the cathode, which causes unnecessary power consumption. For this reason, a thin film is not well deposited on the substrate 723. The iris-shaped shutter has a similar structure to an iris shutter of a camera. When it is opened, the wings of the shutter are opened toward the outer diameter of the shutter and housed at the edge portions. Accordingly, an anode glow smoothly moves from the surface of the shutter 709 to the surface of the substrate 723, as compared with the wing-shaped shutter. Meanwhile, the substrate holder 725 and the shutter 709 are preferably formed of a high melting point metal.
While the present invention has been shown and described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes and modification may be made without departing from the scope of the present invention as defined in the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2007-0116932 | Nov 2007 | KR | national |
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| Number | Date | Country |
|---|---|---|
| 05-293733 | Sep 1993 | JP |
| 2004-009165 | Jan 2004 | JP |
| 2007-53361 | May 2007 | KR |
| Entry |
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| Machine Translation JP 05-293733 dated Sep. 1993. |
| Number | Date | Country | |
|---|---|---|---|
| 20090127102 A1 | May 2009 | US |
