Claims
- 1. In a process for etching a material with a plasma, said plasma characterized by a decreasing luminosity during the etching and a momentary stability in luminosity when the etch is partially complete, the improvement comprising:
- monitoring the variations in luminosity of the plasma;
- terminating the plasma when the variations first stabilize.
- 2. The process as set forth in claim 1 wherein said luminosity is monitored in a selected portion of the spectrum produced by the plasma.
Parent Case Info
This is a division of application Ser. No. 00,472, filed Jan. 2, 1979.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4198261 |
Busta et al. |
Apr 1980 |
|
4201579 |
Robinson et al. |
May 1980 |
|
Non-Patent Literature Citations (1)
Entry |
Kodak Microelectronics Seminar, 1976, A Study of the Optical Emission from a RF Plasma During Semiconductor Etching, by Harshbarger et al., pp. 1-24. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
472 |
Jan 1979 |
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