Number | Name | Date | Kind |
---|---|---|---|
4521286 | Horwitz | Jun 1985 | |
4569719 | Coleman | Feb 1986 | |
4576698 | Gallagher et al. | Mar 1986 | |
4637853 | Bumble et al. | Jan 1987 | |
4676195 | Yasui et al. | Jun 1987 | |
4958591 | Yamazaki | Sep 1990 | |
4971667 | Yamazaki et al. | Nov 1990 |
Number | Date | Country |
---|---|---|
165618 | Dec 1985 | EPX |
210858 | Feb 1987 | EPX |
3331261 | Mar 1984 | DEX |
62-180086 | Aug 1977 | JPX |
54-33668 | Mar 1979 | JPX |
60-36661 | Feb 1985 | JPX |
60-68619 | Apr 1985 | JPX |
60-68620 | Apr 1985 | JPX |
62-4872 | Jan 1987 | JPX |
62-276557 | Dec 1987 | JPX |
63-26373 | Feb 1988 | JPX |
63-33573 | Feb 1988 | JPX |
63-155054 | Jun 1988 | JPX |
1-279759 | Nov 1989 | JPX |
Entry |
---|
Fortuno-Wiltshire, G. and G. Oehrlein, "Hollow Cathode Etching of Si and SiO.sub.2 Using CF.sub.4 and H.sub.2," J. Electrochem. Soc., vol. 136, No. 5 (May 1989) pp. 1447-1449. |
Horwitz, C. and D. McKenzie, "High-Rate Hollow-Cathode Amorphous Silicon Deposition", Applications of Surface Science (Amsterdam) 22/23 (1985) pp. 925-929. |