PLASMA PROCESSING APPARATUS AND ELECTRODE ASSEMBLY FOR PLASMA PROCESSING APPARATUS

Abstract

An electrode assembly, for use in a plasma processing apparatus which generates a plasma by forming a high frequency electric field in a processing chamber accommodating a substrate to be processed, includes a plate shaped member formed of a metal matrix composite material. The plate shaped member has an electric resistance distribution such that an electric resistance in a central portion of the plate shaped member is greater than that in a peripheral portion thereof.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and features of the present invention will become apparent from the following description of preferred embodiments given in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic view showing an overall configuration of a plasma etching apparatus in accordance with an embodiment of the present invention;

FIG. 2 presents a schematic view of a main part of the plasma etching apparatus shown in FIG. 1;

FIG. 3 illustrates a distributional state of electric resistance;

FIG. 4 illustrates another distributional state of electric resistance; and

FIG. 5 offers a schematic view showing an overall configuration of a plasma etching apparatus in accordance with another embodiment of the present invention.

Claims

1. An electrode assembly, for use in a plasma processing apparatus which generates a plasma by forming a high frequency electric field in a processing chamber accommodating a substrate to be processed, the electrode assembly comprising: a plate shaped member being formed of a metal matrix composite material and having an electric resistance distribution such that an electric resistance in a central portion of the plate shaped member is greater than that in a peripheral portion thereof.

2. The electrode assembly of claim 1, wherein the plate shaped member is an electrode surface member that forms an exposed surface in the processing chamber.

3. The electrode assembly of claim 1, wherein the plate shaped member is a member positioned at a backside of an electrode surface member that forms an exposed surface in the processing chamber.

4. The electrode assembly of claim 1, wherein the plate shaped member has a middle portion, the middle portion being positioned between the central portion and the peripheral portion, and having an electric resistance smaller than that of the central portion but greater than that of the peripheral portion.

5. The electrode assembly of claim 2, wherein the plate shaped member has a middle portion, the middle portion being positioned between the central portion and the peripheral portion, and having an electric resistance smaller than that of the central portion but greater than that of the peripheral portion.

6. The electrode assembly of claim 3, wherein the plate shaped member has a middle portion, the middle portion being positioned between the central portion and the peripheral portion, and having an electric resistance smaller than that of the central portion but greater than that of the peripheral portion.

7. A plasma processing apparatus having the electrode assembly disclosed in claim 1, wherein the plasma processing apparatus is constructed to supply a high frequency power to the electrode assembly.

8. A plasma processing apparatus having the electrode assembly disclosed in claim 2, wherein the plasma processing apparatus is constructed to supply a high frequency power to the electrode assembly.

9. A plasma processing apparatus having the electrode assembly disclosed in claim 3, wherein the plasma processing apparatus is constructed to supply a high frequency power to the electrode assembly.

10. A plasma processing apparatus having the electrode assembly disclosed in claim 4, wherein the plasma processing apparatus is constructed to supply a high frequency power to the electrode assembly.

11. A plasma processing apparatus having the electrode assembly disclosed in claim 5, wherein the plasma processing apparatus is constructed to supply a high frequency power to the electrode assembly.

12. A plasma processing apparatus having the electrode assembly disclosed in claim 6, wherein the plasma processing apparatus is constructed to supply a high frequency power to the electrode assembly.

13. A plasma processing apparatus having the electrode assembly disclosed in claim 1, wherein the plasma processing apparatus is constructed such that the electrode assembly has a ground potential.

14. A plasma processing apparatus having the electrode assembly disclosed in claim 2, wherein the plasma processing apparatus is constructed such that the electrode assembly has a ground potential.

15. A plasma processing apparatus having the electrode assembly disclosed in claim 3, wherein the plasma processing apparatus is constructed such that the electrode assembly has a ground potential.

16. A plasma processing apparatus having the electrode assembly disclosed in claim 4, wherein the plasma processing apparatus is constructed such that the electrode assembly has a ground potential.

17. A plasma processing apparatus having the electrode assembly disclosed in claim 5, wherein the plasma processing apparatus is constructed such that the electrode assembly has a ground potential.

18. A plasma processing apparatus having the electrode assembly disclosed in claim 6, wherein the plasma processing apparatus is constructed such that the electrode assembly has a ground potential.