Patent Application
20130061871
The present application relates generally to plasma tools used in integrated circuit fabrication and, more specifically, to reducing undesirable particles within a vacuum chamber for such a plasma tool.
Plasma processing chambers are “qualified” before operation in production based on measurement of the number of particles above a specified size (e.g., 0.10 to 0.12 microns) present inside the vacuum chamber. Undesirable particles within a plasma processing tool may lead to fabrication defects during semiconductor integrated circuit manufacture, reducing yield and resulting in higher manufacturing costs per finished integrated circuit chip. Thin film production chambers are particularly susceptible to reduced yield in manufactured chips due to particles, even when smaller than the qualification size. Such particles are due, for example, to gases trapped in the gas lines or inlets of the plasma processing tool. During idle periods between uses of the plasma processing chamber to operate on lots of wafers, the chamber may experience increases in particles below the qualification measurement size that, over time, induces qualification failure.
During each idle period in which a plasma processing tool is not used in succession, upon lapse of a selected period of inactivity by the plasma production tool (such as about between about 10 minutes and about 60 minutes), a plasma is generated within the plasma processing tool to heat the vacuum enclosure to an operating temperature reached during production use of the plasma processing tool. A gas-only purge is then performed, and the vacuum enclosure is pumped down to a base vacuum to remove small particles of less than a specified size (such as less than about 0.12 microns) that may otherwise generate on the interior walls of the vacuum enclosure. Extended operation of the plasma processing tool without failure of particle qualification or reduced availability is achieved.
For a more complete understanding of the present disclosure and its advantages, reference is now made to the following description taken in conjunction with the accompanying drawings, in which like reference numerals represent like parts:
Particle reduction for idle plasma process chambers may utilize a “gas purge” based on a series of gas introductions to increase pressure, followed by turning off the gas and pumping to a low vacuum to evacuate the chamber. The mechanism by which particle reduction is effected involves eliminating gases that can become trapped in the gas lines, leading to particle issues. The above-described method may be applied across a wide variety of chamber types for different tool types and systems manufactured by different vendors but has been determined by the inventors to result in varying success in reducing particles.
Plasma processing tool 100 includes a plasma source 104 configured to produce a plasma (ionized gas) of a selected material, to introduce the plasma into the vacuum chamber 101 while the interior of the chamber is otherwise substantially evacuated, and to direct a beam of such plasma onto a wafer supported on the wafer chuck 103. In the exemplary embodiment, plasma source 104 is a radio frequency (RF) plasma device. Plasma processing tool 100 also includes a gas mass/flow pump and controller 105 configured to selectively evacuate the vacuum chamber 101 or to introduce selected gases into the vacuum chamber 101 in a controlled manner. Mass/flow pump and controller 105 is thus in fluid communication with one or more gas supplies 106, each containing a source of gas with a predetermined purity. The gases employed may include oxygen (O2) or inert gases such as argon (Ar). The plasma source 104, mass/flow pump and controller 105, and inlet control valves connected to gas supplies 106 are electrically coupled to and controlled by a user-programmable control system 107, which controls the sequence of operation of those subsystems and the parameters of their operation.
Those skilled in the art will recognize that the complete structure and operation of a plasma processing tool is not depicted in the drawings or described herein. Instead, for simplicity and clarity, only so much of a plasma processing tool as is unique to the present disclosure or necessary for an understanding of the present disclosure is depicted in the drawings and described herein. In addition, at least some of the components of the plasma processing tool are illustrated diagrammatically in the drawings, without intending to suggest the physical structure or location of those components within the plasma processing tool.
As illustrated in
It was determined by the inventors that the temperature of the vacuum chamber dome was not being exercised frequently enough when the tool was idle and subject to only gas purging. That lack of temperature excursion allowed the count of very small particles, of about 0.1 to 0.12 μm (below typical qualification measurement), to increase within 72 hours to a level that would induce a qualification failure.
The solution of the present disclosure adds the use of a plasma to improve upon the existing gas purging by adding a temperature component (created by the plasma) to prevent particle generation on the dome and walls. A standard gas purge is then performed to take the particles out of the chamber through the foreline. Then a pump-down to base vacuum is employed to ensure all gases and particles have been removed from the vacuum chamber. This combination of periodic temperature cycling and gas purges works to improve the chamber idle condition. After implementation of the above-described solution, an immediate improvement was seen without the need for a periodic “burn” wafer.
The effectiveness of particle reduction has been found to be keyed to adding the plasma purge prior to gas purge/pump cycles. Gas-only purges (i.e., without a plasma purge as described) are designed to reduce the risk of gases trapped in the gas lines leading to a particle problem. Such purges are not designed to reduce particle issues related to the vacuum chamber components, which drives the need for season or “burn” wafers.
Upon expiration of the selected period of inactivity, a series of plasma purges is initiated (step 303). The plasma processing tool is activated to produce a plasma (e.g., inert gas flow, followed by O2 flow, and then RF plasma generation). The mechanism for directing a beam of plasma at the wafer chuck need not be activated, since a goal of plasma production is merely to heat the vacuum chamber dome, which can cause particles adhering to the chamber's interior walls to dissociate from the walls. The chamber is then pumped down to base vacuum, followed by a gas only purge and then by a second pump down to base vacuum, to remove any free (or loose) particles from the chamber. The sequence may be repeated multiple times in succession before the tool is allowed to once again become inactive, awaiting expiration of the selected inactivity period (step 302). The process may continue for as long as the tool remains idle. Upon resumption of production with the tool, the process exits the loop depicted (step 304).
The addition of a thermal component (plasma purging) to idle period preventive maintenance in plasma processing tools has been proven to keep small particles from increasing due to idle periods. A chamber was run with the above-described plasma purging in addition to gas purging for more than six months without qualification failure. Turning off the plasma purging led to catastrophic failure within three days, similar to the timing of such failures seen at tool start-up with reactive maintenance in response to particle fails.
The following definitions apply to certain words and phrases used throughout this patent document: the terms “include” and “comprise,” as well as derivatives thereof, mean inclusion without limitation; the term “or,” is inclusive, meaning and/or; and the phrases “associated with” and “associated therewith,” as well as derivatives thereof, may mean to include, be included within, interconnect with, contain, be contained within, connect to or with, couple to or with, be communicable with, cooperate with, interleave, juxtapose, be proximate to, be bound to or with, have, have a property of, or the like. Definitions for other words and phrases are provided throughout this patent document, those of ordinary skill in the art should understand that in many, if not most instances, such definitions apply to prior, as well as future uses of such defined words and phrases.
Although the present disclosure has been described with exemplary embodiments, various changes and modifications may be suggested to one skilled in the art. It is intended that the present disclosure encompass such changes and modifications as fall within the scope of the appended claims.
This application claims priority to U.S. Provisional Patent Application Ser. No. 61/532,834 filed on Sep. 9, 2011. The content of the above-identified patent document is incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| 61532834 | Sep 2011 | US |
