Patent Application
20140353530
Not Applicable
Not Applicable
1. Technical Field
The present invention is directed to tunable photodetectors, and more particularly to a high contract grating tunable resonance photodetector and to an HCG dual usage HCG VCSEL that can function as a dual usage HCG VCSEL and a tunable detector.
2. Background Discussion
A tunable photodetector is an important optical component and has a wide range of applications including but not limited to, optical communications, medical diagnostics, biochemical sensing, environmental monitoring, industrial processes control, defense, and the like. Tunable lasers and detectors are important for wavelength-division-multiplexed (WDM) optical communication systems.
The tunability provides a great flexibility and re-configurability to the network. Tunable 1550-nm dual usage HCG VCSELs are especially desirable because of their simple coupling scheme, continuous tuning characteristics, low power consumption and potentially low manufacturing cost.
There is a need for a monolithically integrated dual usage HCG VCSEL-detector due to its small footprint and low energy consumption. There is a further need for a dual usage HCG VCSEL-detector with a large tuning range, narrow spectral width, high responsivity, high detection speed and high tuning speed.
An object of the present invention is to provide a dual usage HCG VCSEL-detector.
Another object of the present invention is to provide a dual usage HCG VCSEL-detector that is monolithically integrated.
Yet another object of the present invention is to provide a dual usage HCG VCSEL-detector with a large tuning range, narrow spectral width, high responsivity, high detection speed and high tuning speed.
A further object of the present invention is to provide dual usage HCG VCSEL-detectors in a duplex link, with one operating at a laser mode and the other dual usage HCG VCSEL-detector operating at a detector mode.
Still another object of the present invention is to provide a dual usage HCG VCSEL-detector in combination with a circulator.
Another object of the present invention is to provide a dual usage HCG VCSEL-detector with a plurality of dual usage HCG VCSEL-detectors turned to a plurality of different wavelengths at a central office.
Still another object of the present invention is to provide a dual usage HCG VCSEL-detector in combination with an array waveguide grating (AWG) that multiplexes different wavelengths into a single fiber into a plurality of individual channels, with each channel going to an end user with a dual usage HCG VCSEL-detector.
Yet another object of the present invention is to provide a dual usage HCG VCSEL-detector that is an optical add-drop filter.
A further object of the present invention is to provide a dual usage HCG VCSEL-detector that is part of a multi-token ring.
Still a further object of the present invention is to provide a dual usage HCG VCSEL-detector included in an optical network with wavelength-division-multiplexing (WDM).
Another object of the present invention is to provide a dual usage HCG VCSEL-detector included in a wavelength-division-multiplexing passive optical network (WDM PON).
Yet another object of the present invention is to provide a dual usage HCG VCSEL-detector included with a time-division-multiplexing (TDM) system.
A further object of the present invention is to provide a dual usage HCG VCSEL-detector included in an optical link network, where the link can be dynamically reconfigured to be receiver or transmitter.
Still another object of the present invention is to provide a dual usage HCG VCSEL-detector as an optical link, allowing for reconfiguration of the network based on a current data traffic pattern.
Another object of the present invention is to provide a dual usage HCG VCSEL-detector included in a Multi-token ring network topology.
Yet another object of the present invention is to provide a dual usage HCG VCSEL-detector included in an AWG-less WDM.
These and other objects of the present invention are achieved in, a dual usage HCG VCSEL-detector, comprising with a high contrast grating (HCG) reflector first reflector that has a two dimensional periodic structure. The two dimensional structure is a periodic structure that is a symmetric structure with periodic repeating. The symmetrical structure provides that polarization modes of light are undistinguishable. A second reflector is in an opposing relationship to the first reflector. A tunable optical cavity is between the first and second reflectors. An active region is positioned in the cavity between the first and second reflectors. The photodetector is polarization independent. An MQW light absorber is included converts light to electrons. The dual usage HCG VCSEL-detector operates as a dual usage HCG VCSEL and as a tunable photodetector.
Further aspects of the technology will be brought out in the following portions of the specification, wherein the detailed description is for the purpose of fully disclosing preferred embodiments of the technology without placing limitations thereon.
In one embodiment of the present invention, a dual usage HCG VCSEL-detector 10 is provided. In one embodiment, when operating as a dual usage HCG VCSEL, the HCG dual usage HCG VCSEL-detector can: be in single mode; output high optical power, be directly modulated at a high data rate; and can have a large wavelength tuning range.
As illustrated in
In one embodiment, the first 12 or second reflector 14 when it is an HCG is acts and/or is a lens. Anchors and bridges 15 are provided as illustrated in
In one embodiment, the active region 18 is positioned in the cavity 16 at an optical field anti-node position in the cavity 16.
As non-limiting examples, the dual usage HCG VCSEL-detector 10 is a tunable Fabry-Perot cavity the dual usage HCG VCSEL-detector 10 and the first reflector 12 is electrostatically actable. Multiple quantum wells 28 can be the active region, placed at the optical field anti-node position in the cavity 16. In another embodiment, the active region 18 is a double heterostructure action region. The first reflector 12 is actuated by a light absorption structure.
As a non-limiting example, the HCGs of first reflector 12 or second reflector 14 can have broadband high reflectivity. In one embodiment, some of the components have the following designation: Λ, HCG period; s as a grating bar width; tg, as an HCG thickness; d as the tunable air gap; and d2 as the air gap for the second reflector 14 as an HCG.
In one embodiment, the second reflector 14 is a DBR. In other embodiments, the second reflector 14 is a semiconductor or dielectric DBR. The second reflector 14 can be a metal reflector and also an HCG, as recited above.
The first reflector 12 can be electrostatically actuatable. The active region 18 can function within the Fabry-Perot cavity 16 as a light absorbing layer. In one embodiment, the active region 18 is below the Fabry-Perot cavity 16 as a light absorbing layer. The dual usage HCG VCSEL-detector 10 can be a tunable photodetector 10. An embedded tunnel junction 30 can be placed inside the cavity 16 to remove p-doped materials, to reduce free-carrier absorption. The tunnel junction 30 can be placed at a node of the optical cavity 16 to minimize its overlap with the optical field.
In various embodiments, the active region 18 can be on a substrate of GaAs, InP, GaN, GaP, Si, glass, sapphire, and any substrate suitable for epitaxial growth.
In various embodiments, the dual usage HCG VCSEL-detector 10 can be used for a variety of applications, including but not limited to: in a WDM network to select wavelength of interest; in a PON; as an optical wave-meter; as a spectrometer; in medical diagnostics applications; for biochemical sensing applications; in industrial process control systems; in an environmental monitoring system; in concert with a TIA to provide an amplified signal; to recover an analog data signal; to recover a digital data signal; incorporated with at least one of, optical and electrical elements to calibrate a wavelength of the photodetector; to tune to either red or blue off its center wavelength, and the like.
In one embodiment of the present invention, the dual usage HCG VCSEL-detector 10 is an ultra-compact monolithically integrated tunable dual usage HCG VCSEL-detector 10 with a high contrast grating tunable (HCG) Fabry-Perot cavity 16 with embedded quantum wells 28. As a non-limiting example, the high reflectivity and light weight of the high contrast grating HCG 12 enables a narrow spectral width and high tuning speed. As a non-limiting example, in one embodiment, the Fabry-Perot cavity 16 of the present invention provides a large tuning range of >30 nm, high responsivity of 1 A/W as well as high detection speed of 10 Gb/s. 30 nm.
In one embodiment, the dual usage HCG VCSEL-detector 10 is broadly tunable (30-60+ nm) with a spectral line-width between 0.1 and 2 nm and a responsivity of ˜1 A/W for optical communications applications, in particular WDM PON. In another embodiment, the dual usage HCG VCSEL-detector 10 can be tuned quickly on the order of μs for optical communications systems in data centers.
In one embodiment, the present invention is a tunable dual usage HCG VCSEL-detector 10 with high responsivity, close to 1 A/W. In another embodiment, the tunable dual usage HCG VCSEL-detector 10 has a 0.5-2 nm spectral width across a tuning range of 30-60 nm. In another embodiment, the tunable dual usage HCG VCSEL-detector 10 can be tuned at μs time scales.
In one embodiment, the optical Fabry-Perot cavity 16 is formed by the first and second reflectors 12 and 14 possessing high reflectivity. As a non-limiting example, the high reflection can be >: 90%, 95%, 99% and the like. In one embodiment, the first reflector 12, which is actuated by a MEMS structure 32, is designed with a high contrast grating (HCG), as recited above.
In one embodiment, the MEMS structure 32 is a cantilever or a bridge structure, and can be actuated in a variety of ways. As non-limiting examples, the actuation can be: electrostatically; piezo-electrically, thermally and the like.
In one embodiment, the first reflector 12, e.g., the HCG reflector, is a single layer of subwavelength grating with the grating bar made by the high index material and fully surrounded by the low index materials. As a non-limiting example, the low index material can be a high index material of InP and low index material of air. In one embodiment, the grating period is smaller than the optical wavelength in the low index material. As a non-limiting example, for 1550 nm light, the period is less than 1550 nm.
In one embodiment, the spatial periodicity of the HCG can be designed as one dimensional or two dimensional, as illustrated in
The (HCG) reflector first reflector 12 can be a two dimensional periodic structure. The two dimensional structure is a periodic structure that is a symmetric structure with periodic repeating, with the symmetrical structure providing that polarization modes of light are undistinguishable. The photodetector 10 is polarization independent.
In one embodiment, the MQW 24 is light absorber that converts light to electrons.
In one embodiment, the HCG reflector 12 has a 98 to 99 percent peak reflection
In one embodiment, the HCG reflector 12 has a peak reflection sufficient for detecting responsitivity. The higher the responsitivity the higher the conversion of light to electrons.
If the reflectivity is too high, incoming light is mostly reflected and the responsitivity is low. When the reflectivity is too low the cavity is too weak to contain the light and absorb the light and the responsivity is low.
In one embodiment, the HCG peak reflection is in the range of 98% to 99%, and a reflection bandwidth AA/A is from 2% to 15%.
In one embodiment, the HCG 12 has a reflection band sufficient for band detection, at least one of: a full Cat 1530 to 1565 nm, a full L at 1565 to 1625 nm and a full Sat 1460 to 1530 nm.
In one embodiment, the photodetector 10 has a sufficiently a signal to noise ratio to provide for detecting responsitivity. In one embodiment, detecting responsitivity is in the range of at least 0.5 A/W
In one embodiment, the active region # provides for sufficient absorption to be a detector with a responsitivity of at least 0.5 A/W.
In one embodiment, the sufficient absorption is achieved with an MQW 24 thickness of 6 to 12 nm.
In one embodiment, the active region includes an MQW 24 with a thickness of 6 to 12 nm.
In one embodiment, the photodetector 10 uses a reverse bias that is a negative voltage. A positive voltage is applied on a photo current contact and a negative voltage is applied on an intracavity contact.
In one embodiment, the photodetector detects light and converts photons to electrons with the MQW 24 absorbing light. Energy in the light is converted to separate electrons and holes that are collected by contact and form current.
In one embodiment, the first reflector 12 includes a one dimensional grid of materials, as illustrated in
In one embodiment, the two dimensional first reflector 12, e.g., the HCG reflector, can have a variety of patterns. Non-limiting examples of such patterns include but are not limited to a: square grid; hexagonal grid, octagonal grid, grid of squares, grid of lines, and the like. In one embodiment, the lines can be somewhat offset between rows such as in a honeycomb pattern by any amount, arbitrarily offset and the like.
As non-limiting examples,
In one embodiment, the HCG is designed in a non-connected domain where the grating pieces are not connected to each other. In this embodiment, the grating pieces are attached to a low index membrane as shown in
Referring now to
The shape of the unit period of the two dimensional HCG can vary from the examples in
In one embodiment, the first reflector 12 is non-periodic to achieve a desired optical mode shape inside or outside of the cavity 16. As previously mentioned, the first reflector 12 can be polarization dependent or independent.
As non-limiting examples, the DBR can be made of: semiconductor materials; dielectric materials; metal in combination with semiconductor or dielectric materials; metal; and the like.
As a non-limiting example, the reflection spectrum of the first reflector 12, with an HCG thickness of about 200 nm, is shown in
As a non-limiting example,
In order to optimize for narrow line width, large tunability and responsivity, the first reflector 12 reflectivity and the cavity 16 length needs to be properly designed. In one embodiment, a 100 GHz DWDM grid has a line width of ˜0.8 nm, with a responsivity of ˜1 A/W. In one embodiment, a 50 GHz DWDM grid would has a line width of 0.4 nm, with a responsivity of ˜1 A/W. Narrowing the spectrum width requires that the loss of the cavity 16 be minimized.
Because the reflector loss is
the cavity 16 needs to have second reflector 14 with a high reflectivity, and in one embodiment, its reflectivity is as high as possible. The second reflector 14 is the one that the light is not input through. It will be appreciated that the second reflector 14 can be the input reflector when it is an HCG reflector. In one embodiment, the reflectivity of the second reflector 14 is as close to 1 as possible, preferably >99.9%). However, the reflectivity of the first reflector 12, which can be the first or the second reflector, influences dual usage HCG VCSEL-detector 10 responsivity and line-width in that if the reflectivity of the input (coupling) reflector is too high than the spectral line width of the tunable dual usage HCG VCSEL-detector 10 can become smaller than desired and/or the responsivity too low.
For the consideration of the tunability, the cavity 16 is preferably short. As a non-limiting example, its length is 1 to 30 Lambda. The relationship between the wavelength tuning and the reflector displacement is
Δx is the reflector displacement from MEMS tuning and m is the number of the standing wave peaks inside the cavity 16, which is proportional to the cavity 16 length. In order to get a large Δλ, on the order of 30 nm or more, which is one of the limiting factors of the tuning range, m is can be, and in one embodiment is <30. The figure of merits, such as spectrum width, tunability and responsivity are trade-offs. As a non-limiting example, in order to achieve a very narrow line width of <1 nm the reflectivity of the first reflector 12 should be as high as possible, >99.9%. DBR pairs can be on top of the active region 18 to keep improving the first reflector 12 reflection. In one embodiment, to minimize the multi-reflection interference inside the cavity 16, an anti-reflection coating layer (i.e. a layer of material designed such that the overall interface reflection, which as non-limiting examples can be from <5% down to 0%, can be put inside the cavity 16. However, in both cases, the cavity 16 will be longer and the tunability or responsivity could be sacrificed. In one embodiment, a 100 GHz DWDM grid with a line width of ˜0.8 nm is desirable, with a tuning range of 32 nm (optical C band, at 1550 nm). As a non-limiting example, a 50 GHz DWDM grid requires a line width of ˜0.4 nm, with a tuning range of 32 nm (optical C band, at 1550 nm).
Inside the cavity 16, the optically absorbing material structure is embedded to absorb the injected photons and create the photocurrent. In order to reduce the p-type region, reduce the free carrier loss and lower the resistance, the tunnel junction 30 is embedded (the tunnel junction 30 can be made up of a degenerately doped p and n-doped materials which has an Ohmic behavior as the device is biased with a positive voltage going from the n to the p material). One embodiment of the cavity 16 layers is illustrated in
As a non-limiting example, for photodetectors 10 designed for 1550 nm wavelength range, an example of the cavity 16 layers is designed based on InP/AlGaInAs material system. The active region 18, which includes the optically absorbing material structure, including but not limited to the quantum wells 28, is labeled as the “A:” layers and the barrier layers labeled as the “B” layers. As a non-limiting example, the barrier layers B can be made of AlGaInAs with different compositions, including but not limited to Al, Ga, In, and As could all be from 0 to 100% of the group III atoms in the material.
The tunnel junction is placed next to the optically absorbing material structure. The second reflector 14 is below the active region 18, which in one embodiment is made by InP/AlGaInAs DBR pairs. On top of the active region 18, a sacrificial layer is designed to release the first reflector 12. As a non-limiting example, the optical length can be 1 and 100 Lambda for the entire cavity 16 that is has an integer number of resonance wavelength for a round trip.
In order to achieve the best responsivity, the optically absorbing material structure is placed at the peak of the standing wave to get the maximum confinement factor. The material system can be changed based on the selection of the working wavelength range and the processing regulations. As non-limiting examples, material systems, such as GaAs/AlGaAs, InP/InGaAsP, and the like, can also be utilized.
The incidence light comes from the top of the first reflector 12 and/or the second reflector 14 when it is an HCG reflector. At Fabry-Perot cavity 16 resonance condition, light is injected into the cavity 16 and forms a standing wave. Once the standing wave peak is aligned with the optically absorbing material structure, injected photons are absorbed and create free carriers. With biased condition, these free carriers are collected and give photocurrent to the circuit.
In order to optimize the responsivity, the number of the quantum wells 28 in the active region 18 needs to be properly designed. As a non-limiting example, the number of quantum wells can be 1 to 20 The number of quantum wells 28 can be dependent on desired responsivity and the line width. As a non-limiting example, and as illustrated in
When the absorption is beyond the optimum point, the responsivity drops and the quality factor of the cavity 16 drops as well, which results in negative impacts to both of the aspects. If the absorption is smaller than the optimum point, the quality factor and the responsivity become the trade-off. Smaller absorption provides a higher quality factor, resulting in a narrow spectrum width. However, the responsivity is then reduced somewhat. In this embodiment, the number of the quantum wells 28 can be a parameter for such a trade-off.
To have lateral carrier confinement, proton implant, quantum intermixing, thermal oxidation, wet chemical etch, and the like, can be applied to define a current aperture.
In one embodiment, the MEMS structure 32 at this configuration is statically-electrically actuated. A p-n junction is between the tuning contact and the photocurrent contact. By applying a reversed bias voltage, the first reflector 12 and the photocurrent contact layer underneath form a capacitor. There is a static electrical force with this charged capacitor and it pulls the first reflector 12 closer to the active region 18. The optical length of the cavity 16 therefore becomes shorter and tunes the resonance to a bluer wavelength. The tuning speed of the MEMS structure 32 can be optimized by designing the size of the first reflector 12 and the spring constant, which is corresponding to the size of a cantilever supporting the HCG layer. A 27 MHz tuning speed is achieved with this embodiment.
The dual usage HCG VCSEL-detector 10 can be reversed biased to efficiently collect the carriers generated by the photon absorption at the active region 18. In one embodiment, illustrated in
The electrical property of the dual usage HCG VCSEL-detector 10 can be optimized for high speed communication applications, which as non-limiting examples can be with bit rates from 1-100+ Gbps.
The parasitic capacitance can be reduced by properly designing contacts on the top. To reduce parasitic capacitance, it is desirable to make this as small as possible. There is an optimization of the area of the dual usage HCG VCSEL-detector 10. As a non-limiting example, the photodetector can have a range of 10-50 microns, 10-40 microns, 10-30 microns, and the like.
To further investigate the tuning property of the dual usage HCG VCSEL-detector 10. The responsivity spectra of the dual usage HCG VCSEL-detector 10 under different tuning conditions is measured. An example tuning spectrum is shown in
The tuning range of the dual usage HCG VCSEL-detector 10 can be improved by designing the cavity reflector, which can be the first or second reflector 12 and 14, respectfully to have the wider high reflectivity bandwidth. For example, the second reflector 14, can be an HCG reflector instead of a DBR. Additionally, because an HCG reflector has a much smaller penetration depth than a DBR reflector, the total cavity 16 length is greatly reduced, which as a non-limiting example can be a reduction by 1 to 10 Lambda, and the tuning efficiency enhanced, which as a non-limiting example, the enhancement of the tuning is between 0.02 and 0.3 nm laser/nm mechanical movement. In another embodiment, by designing the MEMS structure 32 junction to have a higher break down voltage, as a non-limiting example 30-300 V, by optimizing the doping concentration, doping type, material type, and the like, a higher tuning voltage can be applied, as a non-limiting example, 30-100 V. Therefore, the MEMS spring constant can be stiffer, which as a non-limiting example can have k<1, in order to achieve a faster tuning speed with the same tuning range.
As a non-limiting example, the error free detection for 2.5 Gbps signal has been tested and the eye diagram is shown in
In one embodiment, when operating as a detector the dual usage HCG VCSEL-detector 10: has a large responsivity; has a narrow spectrum width; has a large wavelength tuning range; and can detect signal at high data rate. The combination of the laser and detector 10 into the HCG dual usage HCG VCSEL-detector 10 as a single device greatly simplifies the configuration of the transceiver.
A duplex link 34 can be established between two dual usage HCG VCSEL-detectors 10. In one embodiment, HCG dual usage VCSEL-detector 10 enables various optical network 36 schemes, and provides extra flexibility and re-configurability to WDM-PON and WDM data center networks 36.
In one embodiment, a second dual usage HCG VCSEL-detector 10 is provided. A duplex link 34 is established between the first and second dual usage HCG VCSEL-detectors 10, with one of the dual usage HCG VCSEL-detectors 10 operating at a laser mode and the other dual usage HCG VCSEL-detector 10 operates at a detector mode.
In one embodiment, a circulator 38 is included with first, second and third ports 40, 42 and 44 respectfully. Incoming light with different wavelength channels is coupled into the dual usage HCG VCSEL-detector 10 from the first port 40 to the second port 42. In a detection mode only a channel with a matched wavelength to a cavity resonance is detected, and others are reflected and coupled out to the third port 44.
In one embodiment, a plurality of N dual usage HCG VCSEL-detectors 10 are provided. The plurality of dual usage HCG VCSEL-detectors 10 are turned to N different wavelengths at a central office 46.
In one embodiment, an array waveguide grating (AWG 56) multiplexes the different wavelengths into a single fiber 48 into N individual channels. Each channel goes to an end user with a dual usage HCG VCSEL-detector 10.
In one embodiment, for each of channel a dual usage HCG VCSEL-detector 10 in the central office 46 operates in a laser mode, while a dual usage HCG VCSEL-detector 10 at an end user site 50 operates in a detector mode for a downstream signal, or vice versus for an upstream signal.
In one embodiment, only one single fiber 48 goes to each of an end user.
In one embodiment, the dual usage HCG VCSEL-detector 10 is an optical add-drop filter 52.
In one embodiment, the dual usage HCG VCSEL-detector 10 is part of a multi-token ring 54.
In one embodiment, the dual usage HCG VCSEL-detector 10 is included in an optical network 36 with wavelength-division-multiplexing (WDM).
In one embodiment, the dual usage HCG VCSEL-detector 10 is included in a wavelength-division-multiplexing passive optical network 36 (WDM PON).
In one embodiment, the dual usage HCG VCSEL-detector 10 is included with a time-division-multiplexing (TDM) system or network 36.
In one embodiment, the dual usage HCG VCSEL-detector 10 is included in an optical link network 36. The optical link 36 can be dynamically reconfigured to be receiver or transmitter. In one embodiment, the optical link 36 allows for reconfiguration of the network 36 based on a current data traffic pattern.
In one embodiment, the dual usage HCG VCSEL-detector 10 included or coupled to a data center.
In one embodiment, the dual usage HCG VCSEL-detector 10 is included in a multi-token ring network 36 topology.
In one embodiment, the dual usage HCG VCSEL-detector 10 is included in an AWG 56-less WDM.
C For the same tuning voltage, the difference in the resonance wavelength between the laser mode and the detector mode can be adjusted by the different injection current into the device in laser mode, as well as designing different laser threshold current and different thermal resistance.
The dual function of the dual usage HCG VCSEL-detector 10 enables various novel network 36 configurations. The following illustrates some of these configurations.
A duplex link 34 can be established with two such dual usage HCG VCSEL-detectors 10, with one operating at the laser mode and the other operating at the detector mode, or versus vice, as shown in
The tunablity and spectrum selectivity of the dual usage HCG VCSEL-detector 10 is suitable for an add-drop filter 52 with a circulator 38, as illustrated in
In one embodiment, the dual usage HCG VCSEL-detector 10 is used in a WDM-PON. The duplex link 34 illustrated in
An AWG 56 is used to multiplex the individual channels into one single fiber 48. At the end users site 50, another AWG 56 is used to demultiplex the data in the single fiber 48 back into N individual channels, and each of these channels go to one end user with a dual usage HCG VCSEL-detector 10. This sets up a point-to-point communication link between the central office 46 and each end user. For each channel, the dual usage HCG VCSEL-detector 10 in the central office 46 can operate in the laser mode, while the dual usage HCG VCSEL-detector 10, at the end user site 50, operates in a detector mode for downstream signal, or vice versus for upstream signals. In one embodiment, there is a single fiber 48 going into each end user. In other embodiments, there can be two or more fibers 48 going to each end user. These embodiments provide a simplified network 36 configuration and reduces the device footprint, e.g., the physical size of the device at the end user. As non-limiting examples, the diameter can be from 1 to 10 mm.
In another embodiment, the dual usage HCG VCSEL-detector 10 is used in a different WDM-PON network 36. The add-drop filter 52, illustrated in
The network 36 configuration is illustrated in
Data stream with multiple channels flow out from a central office 46 and flow into the end users' dual usage HCG VCSEL-detector 10 devices 58. Each end user's dual usage HCG VCSEL-detector 10 is tuned to its own channel and detects or transmits data within this channel. The rest of the data stream remains intact and passes onto the next end user. After flowing through all the end user units, the data stream would flow back to the central office 46. For each end user device 58, at a specific time, the end-user device 58 either receives or transmits a signal at its own channel wavelength. When there is downstream data coming from the central office 46 at its channel wavelength, the unit operates in the detector mode. When there is no such downstream data the end-user device 58 can operate in the laser mode and transmit upstream data back to the central office 46. The same dual usage HCG VCSEL-detector 10 cannot operate in both the laser and detector modes at the same time and thus provides a time-division-multiplex network 36.
At the central office 46, there can be various configurations. At the transmitter side, an AWG 56 can be used to multiplex different individual channel into the one single fiber 48. In another embodiment, a 1-N combiner can be used. At the receiver side, another AWG 56 can be used to demultiplex the channels. In another embodiment, a single dual usage HCG VCSEL-detector 10 can be used in the central office 46 for detection. The single dual usage HCG VCSEL-detector 10 can tune to different channels to receive the upstream data from different end users. In this embodiment, upstream data from different end users cannot be received at the same time.
In another embodiment, a single dual usage HCG VCSEL-detector 10, with the circulator 38, can be the entire central office 46. At a specific time, only one end user can communicate with the central office 46. This is suitable for low data rate applications, where time-division-multiplexing scheme can be used so that different end users can take turns to communicate with the central office 46.
With reference now to
In this embodiment, the optical network 36 greatly enhances the communication bandwidth, and largely reduces the required number of fibers 48, which is crucial to a data center where space and cost are important considerations. This results from a reduction of fibers 48 that are utilized.
In some embodiments, the channel spacing and the data rate within one channel can be designed. For those configurations without the AWG 56, the channel spacing can be dynamically adjusted. The data rate within one channel can also be dynamically adjusted. The fiber 48 in used can be either single mode or multimode. The emission of the dual usage HCG VCSEL can also be in either single mode or multimode.
From the description herein, it will be appreciated that that the present disclosure also encompasses embodiments which include, but are not limited to, the following:
1. A dual usage HCG VCSEL-detector, comprising: a high contrast grating (HCG) reflector first reflector that has a two dimensional periodic structure, the two dimensional structure being a periodic structure that is a symmetric structure with periodic repeating, with the symmetrical structure providing that polarization modes of light are undistinguishable, and a second reflector in an opposing relationship to the first reflector; a tunable optical cavity between the first and second reflectors; an active region positioned in the cavity between the first and second reflectors, the photodetector being polarization independent; an MQW light absorber that converts light to electrons; and wherein the dual usage HCG VCSEL-detector that operates as a dual usage HCG VCSEL and as a tunable photodetector.
2. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the HCG has a 98 to 99 percent peak reflection.
3. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the HCG has a peak reflection sufficient for detecting responsitivity, the higher the responsitivity the higher the conversion of light to electrons.
4. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein if the reflectivity is too high, incoming light is mostly reflected and the responsitivity is low, and when the reflectivity is too low the cavity is too weak to contain the light and absorb the light and the responsivity is low.
5. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the HCG peak reflection is in the range of 98% to 99%, and a reflection bandwidth AA/A is from 2% to 15%.
6. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the HCG has a reflection band sufficient to have for band detection, at least one of: a full Cat 1530 to 1565 nm, a full L at 1565 to 1625 nm and a full S at 1460 to 1530 nm.
7. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector has a sufficiently a signal to noise ratio to provide for detecting responsitivity.
8. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the detecting responsitivity is in the range of at least 0.5 A/W.
9. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the active region provides for sufficient absorption to be a detector with a responsitivity of at least 0.5 A/W.
10. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the sufficient absorption with an MQW thickness of 6 to 12 nm.
11. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the active region includes an MQW with a thickness of 6 to 12 nm.
12. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector uses a reverse bias that is a negative voltage, wherein a positive voltage is applied on a photo current contact and a negative voltage is applied on an intracavity contact.
13. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector detects light and converts photons to electrons with the MQW absorbing light, and energy in the light is converted to separate electrons and holes that are collected by contact and form current.
14. The dual usage HCG VCSEL-detector of any preceding embodiment, further comprising: a second dual usage HCG VCSEL-detector; wherein the dual usage HCG VCSEL-detector is a first dual usage HCG VCSEL detector and a duplex link is established between the first and second dual usage HCG VCSEL-detectors, with one of the dual usage HCG VCSEL-detectors operates at a laser mode and the other dual usage HCG VCSEL-detector operates at a detector mode.
15. The dual usage HCG VCSEL-detector of any preceding embodiment, further comprising: a circulator with first, second and third ports, wherein incoming light with different wavelength channels is coupled into the dual usage HCG VCSEL-detector from the first port to the second port, and in a detection mode only a channel with a matched wavelength to a cavity resonance is detected, and others are reflected and coupled out to the third port.
16. The dual usage HCG VCSEL-detector of any preceding embodiment, further comprising: a plurality of N second dual usage HCG VCSEL-detectors, with the dual usage HCG VCSEL-detector being a first dual usage HCG VCSEL detector; wherein the N and the first dual usage HCG VCSEL-detectors are turned to N+1 different wavelengths at a central office.
17. The dual usage HCG VCSEL-detector of any preceding embodiment, further comprising: an array waveguide grating (AWG) that multiplexes the different wavelengths into a single fiber into N+1 individual channels and each of a channel goes to an end user with a dual usage HCG VCSEL-detector.
18. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein for each of a channel a dual usage HCG VCSEL-detector in the central office operates in a laser mode, while a dual usage HCG VCSEL-detector at an end user cite operates in a detector mode for a downstream signal, or vice versus for an upstream signal.
19. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein only one single fiber goes to each of an end user.
20. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector is an optical add-drop filter.
21. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector is part of a multi-token ring.
22. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector is included in an optical network with wavelength-division-multiplexing (WDM).
23. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector is included in a wavelength-division-multiplexing passive optical network (WDM PON).
24. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector is included with a time-division-multiplexing (TDM) system.
25. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector is included in an optical link network where the link can be dynamically reconfigured to be receiver or transmitter.
26. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the optical link allowing for reconfiguration of the network based on a current data traffic pattern.
27. The dual usage HCG VCSEL detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector included or coupled to a data center.
28. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector is included in a Multi-token ring network topology.
29. The dual usage HCG VCSEL-detector of any preceding embodiment, wherein the dual usage HCG VCSEL-detector is included in an AWG-less WDM.
The foregoing description of various embodiments of the claimed subject matter has been provided for the purposes of illustration and description. It is not intended to be exhaustive or to limit the claimed subject matter to the precise forms disclosed. Many modifications and variations will be apparent to the practitioner skilled in the art. Particularly, while the concept “component” is used in the embodiments of the systems and methods described above, it will be evident that such concept can be interchangeably used with equivalent concepts such as, class, method, type, interface, module, object model, and other suitable concepts. Embodiments were chosen and described in order to best describe the principles of the invention and its practical application, thereby enabling others skilled in the relevant art to understand the claimed subject matter, the various embodiments and with various modifications that are suited to the particular use contemplated.
In the claims, reference to an element in the singular is not intended to mean “one and only one” unless explicitly so stated, but rather “one or more.” All structural, chemical, and functional equivalents to the elements of the disclosed embodiments that are known to those of ordinary skill in the art are expressly incorporated herein by reference and are intended to be encompassed by the present claims. Furthermore, no element, component, or method step in the present disclosure is intended to be dedicated to the public regardless of whether the element, component, or method step is explicitly recited in the claims. No claim element herein is to be construed as a “means plus function” element unless the element is expressly recited using the phrase “means for”. No claim element herein is to be construed as a “step plus function” element unless the element is expressly recited using the phrase “step for”.
This application claims priority to, and the benefit of, U.S. provisional patent application Ser. No. 61/828,796 filed on May 30, 2013, incorporated herein by reference in its entirety, and U.S. provisional patent application Ser. No. 61/828,810 filed on May 30, 2013, incorporated herein by reference in its entirety.
| Number | Date | Country | |
|---|---|---|---|
| 61828796 | May 2013 | US | |
| 61828810 | May 2013 | US |
