Claims
- 1. A method of polishing a semiconductor substrate by CMP, using a polishing pad and a polishing composition to remove excess metal from the substrate, comprising the steps of:
adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure to remove excess metal at a raised removal rate.
- 2. The method according to claim 1 wherein, the step of adjusting the polishing composition with a BTA concentration further comprises the step of:
adjusting the polishing composition with a BTA concentration of 1000 parts per million.
- 3. The method according to claim 1 wherein, the step of adjusting the polishing composition with a BTA concentration further comprises the step of:
adjusting the polishing composition with a BTA concentration of 10,000 parts per million.
Parent Case Info
[0001] This application is a continuation in part of application Ser. No. 09/956,680 filed on Sep. 20, 2001 and Provisional Application Serial No. 60/243,973 filed on Oct. 27, 2000.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60243973 |
Oct 2000 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09956680 |
Sep 2001 |
US |
Child |
10043664 |
Oct 2001 |
US |