Claims
- 1. A polishing pad comprising a hydrophilic polishing layer with a polishing surface, the polishing layer comprising a polishing material having:
i. a density greater than 0.5 g/cm3; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C. of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 300-6000 psi; vii. a tensile strength of 1000 to 15,000 psi; and viii. an elongation to break less than or equal to 500%; the polishing material being useful for chemical mechanical polishing for the manufacture of semiconductor substrates comprising a polymer pad material selected from the group comprising urethane, carbonate, amide, sulfone, vinyl chloride, acrylate, methacrylate, vinyl alcohol, ester and acrylamide; wherein the polishing layer is porous and the polishing surface is formed by a process selected from the group consisting of molding, embossing, printing, casting, sintering, photo-imaging, chemical etching and solidifying.
- 2. The polishing pad in accordance with claim 1 wherein the polishing surface has a micro-texture of indentations or micro-asperities of which an average depth is in the range of less than 50 microns.
- 3. A polishing pad in accordance with claim 1 wherein the polymer includes urethane.
- 4. A polishing pad comprising a hydrophilic polishing layer with a polishing surface, the polishing layer comprising a polishing material having:
i. a density greater than 0.5 g/cm3; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C. of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 300-6000 psi; vii. a tensile strength of 1000 to 15,000 psi; and viii. an elongation to break less than or equal to 500%; the polishing material being useful for chemical mechanical polishing for the manufacture of semiconductor substrates comprising a polymer pad material selected from the group comprising urethane, carbonate, amide, sulfone, vinyl chloride, acrylate, methacrylate, vinyl alcohol, ester and acrylamide; wherein the polishing layer is porous and the polishing surface is formed by molding.
- 5. The polishing pad in accordance with claim 4 wherein the polishing surface has a micro-texture of indentations or micro-asperities of which an average depth is in the range of less than 50 microns.
- 6. A polishing pad in accordance with claim 4 wherein the polymer includes urethane.
- 7. A method of manufacturing a polishing pad comprising a hydrophilic polishing layer with a polishing surface, the polishing layer comprising a polishing material having:
i. a density greater than 0.5 g/cm3; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C. of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 300-6000 psi; vii. a tensile strength of 1000 to 15,000 psi; and viii. an elongation to break less than or equal to 500%; the polishing material being useful for chemical mechanical polishing for the manufacture of semiconductor substrates comprising a polymer pad material selected from the group comprising urethane, carbonate, amide, sulfone, vinyl chloride, acrylate, methacrylate, vinyl alcohol, ester and acrylamide; comprising molding the polishing surface, the polishing layer being porous; and forming the polishing surface without cutting or skiving parallel to the polishing surface.
- 8. The method of claim 7 wherein the polishing layer includes polyurethane and including the additional step of applying an organic material a mold surface prior to molding of the polishing surface.
- 9. The method of claim 7 wherein the molding is a net-shape process for manufacturing the polishing pad.
- 10. The method of claim 7 including the additional step of conditioning the polishing surface with an abrasive surface.
Parent Case Info
[0001] This application is a divisional application of U.S. application Ser. No. 09/711,008 filed Nov. 10, 2000, which is a divisional application of U.S. application Ser. No. 09/465,566 filed on Dec. 17, 1999 which is a continuation of U.S. application Ser. No. 09/054,948 filed Apr. 3, 1998 which claims the benefit of U.S. Provisional Application Serial No. 60/043,404 filed on Apr. 4, 1997 and U.S. Provisional Application Serial No. 60/049,440 filed on Jun. 12, 1997.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60043404 |
Apr 1997 |
US |
|
60049440 |
Jun 1997 |
US |
Divisions (2)
|
Number |
Date |
Country |
Parent |
09711008 |
Nov 2000 |
US |
Child |
10659889 |
Sep 2003 |
US |
Parent |
09465566 |
Dec 1999 |
US |
Child |
09711008 |
Nov 2000 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09054948 |
Apr 1998 |
US |
Child |
09465566 |
Dec 1999 |
US |