Claims
- 1. A method of chemical-mechanical polishing of a semiconductor device or precursor to a semiconductor device, comprising:A. providing a polishing pad, which is not a felt-based polishing pad created by coalescing a polymer onto a fiber substrate, comprising a thermoplastic hydrophilic material having: i. a density greater than 0.5 g/cm3; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C. of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 300-6000 psi; vii. a tensile strength of 1000 to 15,000 psi; and viii. an elongation to break less than or equal to 500%, further comprising a polishing surface, said surface having features produced by a thermoforming process, said features facilitating polishing of a workpiece;B. placing said workpiece in close proximity to said pad; C. introducing a polishing fluid between said workpiece and said pad; D. producing relative motion between said pad and said workpiece.
- 2. A method according to claim 1 wherein said thermoplastic hydrophilic material comprises at least one moiety from the group consisting of: 1. a urethane; 2. a carbonate; 3. an amide; 4. an ester; 5. an ether; 6. an acrylate; 7. a methacrylate; 8. an acrylic acid; 9. a methacrylic acid; 10. a sulphone; 11. an acrylamide; 12. a halide; and 13. a hydroxide.
- 3. A method of chemical-mechanical polishing of a semiconductor device or precursor to a semiconductor device, comprising:A. providing a polishing pad, which is not a felt-based polishing pad created by coalescing a polymer onto a fiber substrate, comprising a thermoplastic material having: i. a density greater than 0.5 g/cm3; ii. a critical surface tension less than or equal to 34 milliNewtons per meter; iii. a tensile modulus of 0.02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C. of 1.0 to 2.5; v. a hardness of 25 to 80 Shore D; vi. a yield stress of 300-6000 psi; vii. a tensile strength of 1000 to 15,000 psi; and viii. an elongation to break less than or equal to 500%, further comprising a polishing surface, said surface having features produced by a thermoforming process, said features facilitating polishing of a workpiece;B. placing said workpiece in close proximity to said pad; C. introducing a polishing fluid between said workpiece and said pad; D. producing relative motion between said pad and said workpiece.
- 4. A method according to claim 3 wherein said thermoplastic material comprises at least one moiety from the group consisting of: 1. a urethane; 2. a carbonate; 3. an amide; 4. an ester; 5. an ether; 6. an acrylate; 7. a methacrylate; 8. an acrylic acid; 9. a methacrylic acid; 10. a sulphone; 11. an acrylamide; 12. a halide; and 13. a hydroxide.
- 5. A method of chemical-mechanical polishing of a semiconductor device or precursor to a semiconductor device, comprising:A. providing a polishing pad, which is not a felt-based polishing pad created by coalescing a polymer onto a fiber substrate, comprising a thermoplastic material having: i. a density greater than 0.5 g/cm3; ii. a tensile modulus of 0.02 to 5 GigaPascals; iii. a ratio of tensile modulus at 30° C. to tensile modulus at 60° C. of 1.0 to 2.5; iv. a hardness of 25 to 80 Shore D; v. a yield stress of 300-6000 psi; vi. a tensile strength of 1000 to 15,000 psi; and vii. an elongation to break less than or equal to 500%, further comprising a polishing surface, said surface having features produced by a thermoforming process, said features facilitating polishing of a workpiece;B. placing said workpiece in close proximity to said pad; C. introducing a polishing fluid between said workpiece and said pad; D. producing relative motion between said pad and said workpiece.
- 6. A method according to claim 5 wherein said thermoplastic material comprises at least one moiety from the group consisting of: 1. a urethane; 2. a carbonate; 3. an amide; 4. an ester; 5. an ether; 6. an acrylate; 7. a methacrylate; 8. an acrylic acid; 9. a methacrylic acid; 10. a sulphone; 11. an acrylamide; 12. a halide; and 13. a hydroxide.
Parent Case Info
This application is a Continuation-In-Part of Ser. No. 09/129,301 filed Aug. 5, 1998 which claims the benefit of U.S. Provisional Application No. 60/054,906 filed Aug. 6, 1997 and also this application is a Continuation-In-Part of Ser. No. 09/465,566 filed Dec. 17, 1999 which is a Continuation of Ser. No. 09/054,948 filed Apr. 3, 1998 (now U.S. Pat. No. 6,022,268) which claims the benefit of U.S. Provisional Application No. 60/043,404 filed Apr. 4, 1997 and U.S. Provisional Application No. 60/049,440 filed Jun. 12, 1997.
US Referenced Citations (14)
Provisional Applications (3)
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Number |
Date |
Country |
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60/054906 |
Aug 1997 |
US |
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60/043404 |
Apr 1997 |
US |
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60/049440 |
Jun 1997 |
US |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/054948 |
Apr 1998 |
US |
Child |
09/129301 |
|
US |
Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
09/465566 |
Dec 1999 |
US |
Child |
09/514717 |
|
US |
Parent |
09/129301 |
Aug 1998 |
US |
Child |
09/465566 |
|
US |