Patent Application
20120028061
The present invention relates to a polyimide film for metallizing, on which a metal layer may be formed by a metallizing method, for use as a material for an electronic component such as a printed wiring board, a flexible printed circuit board, a TAB tape and a COF tape; specifically a polyimide film for metallizing which is prepared from an acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride and a diamine component comprising p-phenylenediamine, and has an anisotropic thermal expansion coefficient; and a process for producing the same. A metal layer having excellent adhesiveness in all directions may be formed on the polyimide film for metallizing by a metallizing method. A metal-plated layer may be formed on the obtained metal-laminated polyimide film by a metal plating method, to provide a metal-plating laminated polyimide film. A part of the metal in the metal-plating laminated polyimide film may be removed, to provide a wiring member mostly having a metal wiring along the direction of greater thermal expansion coefficient (e.g. the direction of the length).
A polyimide film has been used as an insulating member and a cover member for a wiring of an electrical/electronic component.
Patent Document 1 discloses a polyimide film for metallizing, which comprises a polyimide layer (b) and a polyimide layer (a) containing a surface treatment agent on one side or both sides of the polyimide layer (b);
Patent Document 2 discloses a dimensionally-stable aromatic polyimide film, which is obtained from a solution of a polymer prepared by the polymerization of a biphenyltetracarboxylic acid and a phenylenediamine, and has an average thermal expansion coefficient between about 50° C. and about 300° C. within a range of from about 0.1×10−5 cm/cm/° C. to about 2.5×10−5 cm/cm/° C., a ratio (MD/TD) of thermal expansion coefficient in the length direction (MD direction) to thermal expansion coefficient in the width direction (TD direction) within a range of from about ⅕ to about 4, and a thermally dimensional stability, which refers to the percentage of dimensional change of the polyimide film, which is heated from normal temperature to 400° C. and maintained at 400° C. for 2 hours, relative to the dimension before the heat treatment, within a range of from 0% to about 0.3%.
Patent Document 3 discloses a polyimide film, which has a thermal expansion coefficient (aMD) in the machine-transport direction (MD) within a range of from 10 ppm/° C. to 20 ppm/° C. and a thermal expansion coefficient (aTD) in the width direction (TD) within a range of from 3 ppm/° C. to 10 ppm/° C.
Patent Document 4 discloses a continuous production process for a polyimide film in which the thermal expansion coefficient in the width direction is lower than the thermal expansion coefficient in the length direction, which comprises steps of;
flow-casting a solution of a polyimide precursor in a solvent on a support,
removing the solvent from the solution, thereby preparing a self-supporting film;
peeling the self-supporting film from the support;
stretching the self-supporting film in the width direction at an initial heating temperature of from 80° C. to 300° C.; and then
heating the film at a final heating temperature of from 350° C. to 580° C.
As a fine-pitch wiring is formed in a wiring board, it is desired that a polyimide film has a thermal expansion coefficient close to that of a substrate member such as a glass substrate and an epoxy substrate, which is connected to a wiring board, and that of a chip member such as an IC chip, which is mounted on a wiring board. In addition, it is desired that a polyimide film has a thermal expansion coefficient along the direction of the metal wiring in the wiring board close to that of the metal layer.
Meanwhile, the formation of a metal on a polyimide film for metallizing by a metallizing method, the formation of a metal thereon by a metal plating method, and the formation of a metal wiring from the metal layer are generally conducted in a roll-to-roll process. Another substrate and a chip member are mostly connected or mounted to a polyimide film for metallizing along the TD direction. Accordingly, it is desired that a polyimide film has a thermal expansion coefficient in the MD direction which is close to that of a metal, and a thermal expansion coefficient in the TD direction which is close to that of another substrate and a chip member.
In general, the attempts have been made to produce polyimide films having different thermal expansion coefficients between in the MD direction and the TD direction by stretching the film in the length direction and/or in the width direction during the production of the polyimide film.
However, it have been found that a polyimide film, which is prepared from an acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride and a diamine component comprising p-phenylenediamine, and has an different thermal expansion coefficients between in the MD direction and the TD direction by the stretching during the production of the polyimide film, has an anisotropic adherence to a metal layer formed by a metallizing method.
An object of the present invention is to provide a polyimide film having an anisotropic thermal expansion coefficient, on which a metal layer exhibiting excellent adherence to the polyimide film in all directions may be formed by a metallizing method.
The first aspect of the present invention relates to a polyimide film for metallizing, wherein
the polyimide film has an anisotropic thermal expansion coefficient, and comprises a polyimide layer (b) and a polyimide layer (a) on one side or both sides of the polyimide layer (b);
the polyimide layer (b) is a layer of a polyimide prepared from an acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride and a diamine component comprising p-phenylenediamine;
the polyimide layer (a) is a layer of a polyimide prepared from a monomer component comprising at least one selected from the group consisting of phenylenediamines and diaminodiphenyl ethers as a diamine component; and
the polyimide layer (a) contains a surface treatment agent.
In the first aspect of the present invention, the polyimide film for metallizing may be preferably prepared by
(i) coating a self-supporting film of a polyimide precursor solution (b), which is to be converted into the polyimide layer (b), with a polyimide precursor solution (a) containing a surface treatment agent, which is to be converted into the polyimide layer (a); and then stretching or shrinking the film in at least one direction while heating it so that the polyimide film obtained has an anisotropic thermal expansion coefficient; or
(ii) forming a self-supporting film by co-extruding a polyimide precursor solution (b), which is to be converted into the polyimide layer (b), and a polyimide precursor solution (a) containing a surface treatment agent, which is to be converted into the polyimide layer (a); and then stretching or shrinking the film in at least one direction while heating it so that the polyimide film obtained has an anisotropic thermal expansion coefficient.
The second aspect of the present invention relates to a process for producing a long polyimide film for metallizing, which comprises a polyimide layer (b) and a polyimide layer (a) on one side or both sides of the polyimide layer (b), and has an anisotropic thermal expansion coefficient; comprising steps of;
flow-casting a polyimide precursor solution (b), which is to be converted into the polyimide layer (b), on a support, followed by drying, thereby preparing a self-supporting film;
coating the self-supporting film, which is to be converted into the polyimide layer (b), with a polyimide precursor solution (a) containing a surface treatment agent, which is to be converted into the polyimide layer (a); and then
stretching the self-supporting film coated with the polyimide precursor solution (a) in at least one direction while heating it so that the polyimide film obtained has different thermal expansion coefficients between in the MD direction and the TD direction;
wherein
the polyimide layer (b) comprises a polyimide which is prepared from an acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride and a diamine component comprising p-phenylenediamine; and
the polyimide layer (a) comprises a polyimide which is prepared from a monomer component comprising at least one selected from the group consisting of phenylenediamines and diaminodiphenyl ethers as a diamine component.
The third aspect of the present invention relates to a metal-laminated polyimide film, comprising a polyimide film for metallizing according to the first aspect of the present invention, or a polyimide film for metallizing which is obtained by a process for producing a polyimide film for metallizing according to the second aspect of the present invention, and a metal layer which is formed by a metallizing method on the surface of the polyimide layer (a) of the polyimide film.
The fourth aspect of the present invention relates to a metal-plating laminated polyimide film, comprising a metal-laminated polyimide film according to the third aspect of the present invention, and a metal-plated layer which is formed by a metal plating method on the metal layer of the metal-laminated polyimide film.
There will be described preferred embodiments of the polyimide film for metallizing according to the first aspect of the present invention, and the process for producing a polyimide film for metallizing according to the second aspect of the present invention. Two or more of these embodiments may be appropriately combined.
1) The polyimide layer (a) is a layer of a polyimide prepared from a monomer component comprising at least one selected from the group consisting of phenylenediamines and diaminodiphenyl ethers in an amount of from 30 mol % to 100 mol % based on the total molar quantity of the diamine component.
2) The diamine(s) which is/are selected from the group consisting of phenylenediamines and diaminodiphenyl ethers is/are at least one selected from the group consisting of p-phenylenediamine and 4,4′-diaminodiphenyl ether.
3) The thermal expansion coefficient in the MD direction (LMD) and the thermal expansion coefficient in the TD direction (LTD) of the polyimide film satisfy the following inequality: |(LMD−LTD)|>5 ppm.
4) The polyimide layer (a) has a thickness of from 0.05 μm to 2 μm.
5) The surface treatment agent is at least one selected from the group consisting of aminosilane-based surface treatment agents, epoxysilane-based surface treatment agents and titanate-based surface treatment agents.
The polyimide film for metallizing of the present invention has an anisotropic thermal expansion coefficient. Furthermore, a metal layer may be formed on the polyimide film for metallizing by a metallizing method, and the metal layer may exhibit excellent adherence to the polyimide film in all directions.
According to the present invention, there may be provided, or produced a polyimide film having an anisotropic thermal expansion coefficient, on which a metal layer exhibiting excellent adherence to the polyimide film in all directions may be formed by a metallizing method.
The polyimide film for metallizing of the present invention comprises a polyimide layer (b) as a base and a polyimide layer (a) containing a surface treatment agent, which is laminated on one side or both sides of the polyimide layer (b), and has an anisotropic thermal expansion coefficient. A metal layer may be formed on the surface of the polyimide layer (a) of the polyimide film by a metallizing method, to provide a metal-laminated polyimide film having excellent adhesion in all directions in which anisotropy of adhesion strength between the polyimide and the metal layer is reduced.
The polyimide layer (a) containing a surface treatment agent may be a polyimide layer containing a surface treatment agent throughout the polyimide layer (a), or a polyimide layer containing a surface treatment agent at the surface of the polyimide layer (a) which is not in contact with the polyimide layer (b).
As described above, the polyimide film for metallizing of the present invention comprises a polyimide layer (b) and a polyimide layer (a) containing a surface treatment agent, which is formed on one side or both sides of the polyimide layer (b). The polyimide layer (a) may be preferably subjected to a heat treatment at the highest heating temperature of from 350° C. to 600° C. in a state in which the polyimide layer (a) contains a surface treatment agent. The polyimide layer (a) may be particularly preferably obtained by heating a layer of a polyimide precursor solution (a) containing a surface treatment agent, which is formed by coating or co-extrusion, at the highest heating temperature of from 350° C. to 600° C. In addition, the polyimide layer (a) may be preferably laminated directly on the polyimide layer (b).
The polyimide film for metallizing of the present invention has different thermal expansion coefficients in the planar direction, and may be obtained, for example, by stretching the film in at least one direction, or shrinking the film in at least one direction, or stretching and shrinking the film in at least one direction, so that the film obtained has different thermal expansion coefficients in the planar direction. In the production of the polyimide film for metallizing of the present invention, the film may be stretched or shrunk in any direction. In view of handling and productivity, the film may be preferably stretched or shrunk in the TD direction or in the MD direction.
The thermal expansion coefficient in the MD direction (LMD) and the thermal expansion coefficient in the TD direction (LTD) of the polyimide film for metallizing of the present invention may preferably satisfy the inequality: |(LMD−LTD)|>5 ppm, and more preferably satisfy the inequality: (LMD−LTD)|>6 ppm, and further preferably satisfy the inequality: |(LMD−LTD)|>7 ppm, and particularly preferably satisfy the inequality: |(LMD−LTD)|>8 ppm.
When the polyimide film for metallizing of the present invention is to be used, for example, for an IC substrate in which a metal wiring is formed mainly along the MD direction, in particular, the thermal expansion coefficient in the MD direction (LMD) and the thermal expansion coefficient in the TD direction (LTD) of the polyimide film may preferably satisfy the inequality: (LMD−LTD)>5 ppm, and more preferably satisfy the inequality: (LMD−LTD)>6 ppm, and further preferably satisfy the inequality: (LMD−LTD)>7 ppm, and particularly preferably satisfy the inequality: (LMD−LTD)>8 ppm.
The term “MD direction” as used herein refers to the casting direction (flow-casting direction, or winding direction, or length direction) and the term “TD direction” as used herein refers to the width direction.
The polyimide film for metallizing of the present invention may have adequate strength and elasticity for the use in a wiring board and the like, and may preferably have excellent flex resistance, if necessary.
The polyimide film for metallizing of the present invention may preferably have a thermal expansion coefficient (50° C. to 200° C.) in at least one direction, preferably in the MD direction or in the TD direction, more preferably in the MD direction, within a range of from 1×10−6 cm/cm/° C. to 30×10−6 cm/cm/° C., more preferably from 5×10−6 cm/cm/° C. to 25×10−6 cm/cm/° C., particularly preferably from 10×10−6 cm/cm/° C. to 20×10−6 cm/cm/° C.
Examples of the process for producing the polyimide film for metallizing of the present invention include
1) a process comprising
the first step of casting a polyimide precursor solution (b), which is to be converted into the polyimide layer (b), on a support, followed by drying, thereby preparing a self-supporting film; and then coating the self-supporting film with a polyimide solution (a) containing a surface treatment agent or a polyimide precursor solution (a) containing a surface treatment agent, which is to be converted into the polyimide layer (a); and
the second step of stretching the coated film in at least one direction and heating the film at the highest heating temperature of from 350° C. to 600° C.;
2) a process comprising
the first step of casting a polyimide solution (b) or a polyimide precursor solution (b), which is to be converted into the polyimide layer (b), and a polyimide solution (a) containing a surface treatment agent or a polyimide precursor solution (a) containing a surface treatment agent, which is to be converted into the polyimide layer (a), on a support by co-extrusion using a die and the like, followed by drying, thereby preparing a self-supporting film; and
the second step of stretching the self-supporting film in at least one direction and heating the film at the highest heating temperature of from 350° C. to 600° C.;
3) a process comprising
the first step of casting a polyimide precursor solution (b), which is to be converted into the polyimide layer (b), on a support, followed by drying, thereby preparing a self-supporting film; and then coating the self-supporting film with a polyimide solution (a) containing no surface treatment agent or a polyimide precursor solution (a) containing no surface treatment agent, if necessary, followed by drying (A part of the polyimide precursor contained in the polyimide precursor solution (a) may be imidized); and then coating the surface, which is coated with the polyimide precursor solution (a), with a solution containing a surface treatment agent, followed by drying, if necessary; and
the second step of stretching the coated film in at least one direction and heating the film at the highest heating temperature of from 350° C. to 600° C.; and
4) a process comprising
the first step of casting a polyimide solution (b) or a polyimide precursor solution (b), which is to be converted into the polyimide layer (b), and a polyimide solution (a) containing no surface treatment agent or a polyimide precursor solution (a) containing no surface treatment agent on a support by co-extrusion using a die and the like, followed by drying, thereby preparing a self-supporting film; and then coating the self-supporting film with a solution containing a surface treatment agent, followed by drying, if necessary; and
the second step of stretching the coated film in at least one direction and heating the film at the highest heating temperature of from 350° C. to 600° C.;
In the present invention, it is particularly preferred that a multi-layer self-supporting film, which is prepared by laminating a polyimide precursor layer (a) containing a surface treatment agent on one side or both sides of a self-supporting film of a polyimide precursor solution (b), is dried and imidized by a heat treatment at the highest heating temperature of from 350° C. to 600° C., preferably from 450° C. to 590° C., more preferably from 490° C. to 580° C., further preferably from 500° C. to 580° C., particularly preferably from 520° C. to 580° C. The process may provide a polyimide film having sufficient mechanical properties (tensile elastic modulus) and thermal properties (thermal expansion coefficient) as a whole, and improved adhesiveness, wherein a metal layer may be formed on the surface of the polyimide layer (a) by a metallizing method, to provide a laminate having higher peel strength than the practical level.
In the first step, a self-supporting film may be stretched, and then coated with a polyimide solution (a) containing a surface treatment agent or a polyimide precursor solution (a) containing a surface treatment agent.
According to the present invention, in the case of a long polyimide film, although the polyimide film may be wound into a roll with the side which was in contact with a support when casting either outward or inward, the polyimide film may be preferably wound into a roll with the side which was in contact with a support when casting outward, in view of the simplification of the process.
One specific example of the process for producing the polyimide film for metallizing of the present invention in which a polyimide precursor solution (b) is employed is as follows.
A polyimide film may be continuously produced by a process comprising
the first step in which using a film-forming machine equipped with a single-layer or multi-layer extrusion die, a solution of a polyimide precursor in a solvent, or two or more solutions of polyimide precursors in solvents are fed to the die, and then extruded from the outlet (lip) of the die onto a support (endless belt, drum and the like) in the form of a single-layer or multi-layer thin film, to provide a thin film of the solution(s) of the polyimide precursor(s) in the solvent(s) having a substantially uniform thickness; and then in a casting oven, while moving the support (endless belt, drum and the like), the thin film is heated at a temperature at which imidization of the polyimide precursor(s) do not fully proceed and a part of or most of the organic solvent(s) are removed from the thin film, preferably at a temperature of from 50° C. to 210° C., more preferably from 60° C. to 200° C., to gradually remove the solvent(s) from the thin film until the film becomes self-supporting for pre-drying; and then the self-supporting film thus obtained is peeled from the support; and then a polyimide precursor solution or polyimide solution containing a surface treatment agent is applied or sprayed onto one side or both sides of the self-supporting film; and then, if necessary, mainly the solvent(s) contained in the coating solution are removed from the self-supporting film by drying, extraction and the like; and
the second step in which the self-supporting film is started to be stretched in the MD direction or in the TD direction at a temperature of from 80° C. to 300° C., preferably from 90° C. to 240° C.; and then, if necessary, the self-supporting film is heated at an intermediate heating temperature, and then at a final heating temperature to effect imidization; and
the third step in which the long polyimide film is wound into a roll, to provide a polyimide film in the form of a roll.
The self-supporting film which is obtained in the first step and stretched may preferably have a solvent content of from 25 wt % to 45 wt %, more preferably from 27 wt % to 43 wt %, further preferably from 30 wt % to 41 wt %, particularly preferably from 31 wt % to 40 wt %, and an imidization rate of from 5% to 40%, more preferably from 5.5% to 35%, further preferably from 6.0% to 30%, further preferably from 10% to 28%, particularly preferably from 15% to 27%, because more remarkable effects may be achieved.
The solvent content (weight loss on heating) of a self-supporting film as described above is calculated by the following formula from the weight of the film of interest before drying (W1) and the weight of the film after drying at 400° C. for 30 min (W2).
Weight loss on heating (wt %)={(W1−W2)/W1}×100
The imidization rate of a self-supporting film as described above may be calculated based on the ratio of the vibration band peak area between the self-supporting film and a fully-cured product, which are measured with an IR spectrometer (ATR). The vibration band peak utilized in the procedure may be a symmetric stretching vibration band of an imide carbonyl group and a stretching vibration band of a benzene ring skeleton. The imidization rate may be also determined in accordance with the procedure described in JP-A-H09-316199, using a Karl Fischer moisture meter.
In the first step, the thin film may be heated for drying in a casting oven at a temperature at which imidization of the polyimide precursor(s) do not fully proceed and a part of or most of the organic solvent(s) are removed from the thin film, until the film is capable of being peeled from the support. Furthermore, in the second step, the film may be stretched in the width direction at an initial heating temperature of from 80° C. to 240° C., and preferably finished to be stretched in the width direction at an initial heating temperature of from 80° C. to 300° C. It is preferred that the heating temperature, the heating time and the stretching conditions are appropriately selected so as to fulfill the conditions as described above. For example, the thin film may be heated and stretched at an initial heating temperature of from 80° C. to 300° C. for from about 2 min to about 60 min.
The support on which a polyimide solution or a polyimide precursor solution is cast in the first step may be formed from any known material. The support may preferably have a surface made of metal such as stainless steel or resin such as polyethylene terephthalate. Examples of the support include a stainless belt, a stainless roll, and a polyethylene terephthalate belt.
The support may preferably have a surface on which a uniform thin film of a solution is formed.
The support may particularly preferably have a smooth surface, although the support may have a groove and/or emboss in the surface.
The self-supporting film which is peeled from the support, or stretched in the width direction at an initial heating temperature in the second step may preferably have a solvent content of from 25 wt % to 45 wt %, more preferably from 27 wt % to 43 wt %, further preferably from 30 wt % to 41 wt %, particularly preferably from 31 wt % to 40 wt %, because more remarkable effects may be achieved.
In the case where a self-supporting film is coated with a polyimide precursor solution (a) containing a surface treatment agent in the first step, the self-supporting film may be coated with a polyimide precursor solution (a) containing a surface treatment agent either after the self-supporting film is peeled from the support, or before the self-supporting film is peeled from the support (i.e. the self-supporting film on the support).
The self-supporting film may preferably have a surface (either one side or both sides) on which a polyimide precursor solution (a) containing a surface treatment agent to be converted into a polyimide (a) may be substantially evenly, more preferably evenly applied.
A polyimide precursor solution (a) containing a surface treatment agent may be preferably applied onto one side or both sides of the self-supporting film evenly.
A polyimide precursor solution (a) or polyimide solution (a) containing a surface treatment agent, which is to be converted into the polyimide (a), may be applied onto one side or both sides of the self-supporting film by any known coating method, which includes, for example, gravure coating, spin coating, silk screen coating, dip coating, spray coating, bar coating, knife coating, roll coating, blade coating, and die coating.
In the second step, a self-supporting film may be preferably heated, or heated and stretched with both edges in the width direction fixed by means of a pin tenter, a clip tenter or a chuck tenter, for example, during the whole of or a part of heat treatment, including a heat treatment at an initial heating temperature, a heat treatment at a final heating temperature, and a heat treatment both at an initial heating temperature and at a final heating temperature.
In the second step, a self-supporting film may be particularly preferably heated with both edges in the width direction fixed during the whole heat treatment of from the initial heating temperature to the final heating temperature.
In the production of the polyimide film for metallizing of the present invention, the film may be stretched according to any known method so as to achieve a desired thermal expansion coefficient and desired properties. The stretch ratio may be appropriately selected, for example, within a range of from 0.7 to 1.9, preferably from 0.8 to 1.7, more preferably from 0.9 to 1.5, further preferably from 1.01 to 1.12.
In the case of a self-supporting film which is formed by coating or co-extrusion, in particular, the stretch ratio may be preferably within a range of from 1.01 to 1.12, more preferably from 1.04 to 1.11, further preferably from 1.05 to 1.10, further preferably from 1.06 to 1.10, particularly preferably from 1.07 to 1.09.
As an example of stretching, a film may be shrunk or stretched by moving at least one of two tenter members (or elements) and the like, with which both edges of the film are fixed. As another example of stretching, a film may be shrunk or stretched by controlling the roll speed, the tension between rolls, and the like in the continuous production process.
The heat treatment in a casting oven in the first step, and heat treatment at an initial heating temperature, heat treatment at an intermediate heating temperature, and heat treatment at a final heating temperature in the second step may be conducted by heating the film in a plurality of heating blocks (zones) having various temperatures, in other words, may be conducted using a casting oven comprising a plurality of heating blocks having various temperatures, and a heating apparatus such as a heating oven comprising a plurality of heating blocks having various temperatures.
The heat treatment of from the initial heating temperature to the final heating temperature in the second step may be preferably conducted using a heating apparatus such as a single heating oven comprising a plurality of heating blocks (zones) having various temperatures.
In the second step, the stretch speed of the self-supporting film in the MD direction or in the TD direction may be appropriately selected so as to achieve desired properties, including desired thermal expansion coefficient. The self-supporting film may be preferably stretched at a speed of from 1%/min to 20%/min, more preferably from 2%/min to 10%/min.
As for the pattern for the stretching of the self-supporting film, the self-supporting film may be instantaneously stretched, or stretched step-by-step, or gradually stretched at a variable speed, or gradually stretched at a constant speed from the stretch ratio 1 to the desired stretch ratio, or a combination of two or more of these patterns may be also employed. The self-supporting film may be preferably stretched gradually at a constant speed.
The heating time for the stretching of the self-supporting film in the second step may be appropriately selected depending on a apparatus to be used, and the like, and may be preferably from 1 min to 60 min.
In the second step, the self-supporting film may be preferably started to be stretched at a temperature within the above-mentioned range (80° C. to 240° C.), because the self-supporting film may be easily stretched without any trouble, and when the self-supporting film is stretched in the TD direction, troubles such as a break in fixing parts, which is caused by hardening of the film due to imidization and volatilization of solvent(s) may be avoided.
In addition, if necessary, the self-supporting film may be heated at an intermediate heating temperature between the heating temperature at which the stretching is started and the final heating temperature. As for the heat treatment at an intermediate heating temperature, the self-supporting film may be heated at a temperature higher than the initial heating temperature and lower than the final heating temperature for from 1 min to 60 min. Subsequently, the self-supporting film may be preferably heated at a temperature of from 350° C. to 600° C., preferably from 450° C. to 590° C., more preferably from 490° C. to 580° C., further preferably from 500° C. to 580° C., particularly preferably from 520° C. to 580° C., which is the final heating temperature, for from 1 min to 30 min.
The above-mentioned heat treatment may be conducted using any known heating apparatus such as a hot-air oven and an infrared oven.
The film may be preferably heated at an initial heating temperature, an intermediate heating temperature and/or a final heating temperature in an inert gas atmosphere such as nitrogen gas and argon gas or in a heated gas atmosphere such as air.
As necessary, a polyimide solution (b) may be used, instead of the polyimide precursor solution (b), and a polyimide solution (a) may be used, instead of the polyimide precursor solution (a).
The polyimide film for metallizing of the present invention may be preferably subjected to a heat treatment at a temperature of from 350° C. to 600° C., preferably from 450° C. to 590° C., more preferably from 490° C. to 580° C., further preferably from 500° C. to 580° C., particularly preferably from 520° C. to 580° C., when the polyimide film is to be used as a material for an electronic component such as a printed wiring board, a flexible printed circuit board, and a TAB tape.
The polyimide layer (a) of the polyimide film for metallizing of the present invention contains a surface treatment agent. Due to the presence of the surface treatment agent in the polyimide layer (a), a metal layer may be formed directly on the surface of the polyimide film by a metallizing method, and the metal layer may exhibit excellent adherence to the polyimide film.
The term “polyimide layer (a) containing a surface treatment agent” includes a case in which the surface treatment agent is contained in the polyimide layer (a) without change, and a case in which the surface treatment agent contained in the polyimide layer (a) has undergone a change, including chemical change such as oxidation, caused by heat treatment, for example, at a temperature of from 350° C. to 600° C., preferably from 450° C. to 590° C., more preferably from 490° C. to 580° C., further preferably from 500° C. to 580° C., particularly preferably from 520° C. to 580° C., in a polyimide or a polyimide precursor, or an organic solvent solution thereof.
The thickness of the polyimide film for metallizing of the present invention may be appropriately selected depending on the intended use, and may be, but not limited to, from about 5 μm to about 105 μm.
In the polyimide film for metallizing of the present invention, the thicknesses of the polyimide layer (b) as a base and the polyimide layer (a) as a surface layer may be appropriately selected depending on the intended use.
The thickness of the polyimide layer (b) may be preferably from 5 to 100 μm, more preferably from 8 μm to 80 μm, further preferably from 10 μM to 80 μm, particularly preferably from 20 μm to 40 μm.
The polyimide layer (a) may have such a thickness that the polyimide film may exhibit no or reduced anisotropy of adherence in the surface. The thickness of the polyimide layer (a) may be preferably from 0.05 μm to 2 μm, more preferably from 0.06 μm to 1.5 μm, further preferably from 0.07 μm to 1 μm, particularly preferably from 0.1 μm to 0.8 μm. When the thickness of the polyimide layer (a) is preferably from 0.05 μm to 1 μm, more preferably from 0.06 μm to 0.8 μm, further preferably from 0.07 μm to 0.5 μm, particularly preferably from 0.08 μm to 0.2 μm, 90° peel strengths of the obtained metal-laminated polyimide film and the obtained metal-plating laminated polyimide film may not be reduced, and a chip may be mounted thereon at a high temperature with Au—Au connection or Au—Sn connection without embedding a metal wiring in the polyimide layer.
The polyimide (b) to be used for the polyimide layer (b) is a polyimide which is prepared from an acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride and a diamine component comprising p-phenylenediamine, preferably a polyimide which is prepared from an acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride in an amount of from 50 mol % to 100 mol %, more preferably from 70 mol % to 100 mol %, particularly preferably from 85 mol % to 100 mol %, based on the total molar quantity of the acid component and a diamine component comprising p-phenylenediamine in an amount of from 50 mol % to 100 mol %, more preferably from 70 mol % to 100 mol %, particularly preferably from 85 mol % to 100 mol %, based on the total molar quantity of the diamine component. The polyimide (b) may be a polyimide which is used as a base for a printed wiring board, a flexible printed circuit board, a TAB tape and a COF tape, for example.
The polyimide (b) may comprise
an acid component comprising at least one selected from the group consisting of 2,3,3′,4′-biphenyltetracarboxylic dianhydride, pyromellitic dianhydride, 3, 3′,4,4′-benzophenone tetracarboxylic dianhydride, 3,3′,4,4′-diphenyl ether tetracarboxylic dianhydride, and 1,4-hydroquinone dibenzoate-3,3′,4,4′-tetracarboxylic dianhydride, and
a diamine component comprising at least one selected from the group consisting of diamines having one or two benzene rings (which do not have an alkyl chain containing two or more carbon atoms such as ethylene chain between the two benzene rings) such as m-phenylenediamine, 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, o-tolidine, m-tolidine, and 4,4′-diaminobenzanilide, as long as the characteristics of the present invention would not be impaired.
A preferable combination of an acid component and a diamine component constituting the polyimide (b) may be a polyimide comprising at least one selected from the group consisting of 2,3,3′,4′-biphenyltetracarboxylic dianhydride, pyromellitic dianhydride, 4,4′-diaminodiphenyl ether, and 3,4′-diaminodiphenyl ether, in addition to 3,3′,4,4′-biphenyltetracarboxylic dianhydride and p-phenylenediamine, which may be suitably used as a material for an electronic component such as a printed wiring board, a flexible printed circuit board and a TAB tape, and exhibit excellent mechanical properties over a wide temperature range, and have long-term heat resistance, high resistance to hydrolysis, a high thermal-decomposition initiation temperature, a low heat shrinkage ratio, a low thermal expansion coefficient, and high flame resistance.
The polyimide (a) to be used for the polyimide layer (a) is a polyimide which is prepared from an acid component and a diamine component comprising at least one selected from the group consisting of phenylenediamines and diaminodiphenyl ethers, preferably a polyimide which is prepared from an acid component and a diamine component comprising at least one selected from the group consisting of phenylenediamines and diaminodiphenyl ethers in an amount of from 30 mol % to 100 mol %, more preferably from 50 mol % to 100 mol %, further preferably from 70 mol % to 100 mol %, particularly preferably from 85 mol % to 100 mol %, based on the total molar quantity of the diamine component. When using the polyimide as described above, the obtained polyimide film for metallizing may exhibit excellent heat resistance, and mechanical properties.
In the present invention, the polyimide (a) to be used is not a “heat-resistant amorphous polyimide” as described in the claims of JP-A-2005-272520; a “thermoplastic polyimide” as described in the claims of JP-A-2003-251773; a “heat-resistant amorphous polyimide” as described in the claims of JP-A-2005-272520; nor a “thermoplastic polyimide” as described in the claims of JP-A-2003-251773.
Examples of the diamine component in the polyimide (a) include p-phenylenediamine and m-phenylenediamine as phenylenediamines, and 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether and 3,3′-diaminodiphenyl ether as diaminodiphenyl ethers.
Among others, p-phenylenediamine, 4,4′-diaminodiphenyl ether, and/or 3,4′-diaminodiphenyl ether may be particularly preferably used as the diamine component in the polyimide (a).
As the acid component in the polyimide (a), at least one selected from the group consisting of 3,3′,4,4′-biphenyltetracarboxylic dianhydride, pyromellitic dianhydride, and 1,4-hydroquinone dibenzoate-3,3′,4,4′-tetracarboxylic dianhydride may be preferably used.
The polyimide (a) may be preferably a polyimide which is prepared from
1) an acid component comprising at least one selected from the group consisting of 3,3′,4,4′-biphenyltetracarboxylic dianhydride, pyromellitic dianhydride, and 1,4-hydroquinone dibenzoate-3, 3′,4,4′-tetracarboxylic dianhydride, and
2) a diamine component comprising, in addition to phenylenediamines and diaminodiphenyl ethers, at least one selected from the group consisting of diamines having one or two benzene rings (which do not have an alkyl chain containing two or more carbon atoms such as ethylene chain between the two benzene rings) such as o-tolidine, m-tolidine, and 4,4′-diaminobenzanilide,
as long as the characteristics of the present invention would not be impaired. When using the polyimide as described above as the polyimide (a), the obtained polyimide film may exhibit reduced embedding of metal wiring.
A preferable combination of an acid component and a diamine component constituting the polyimide (a) may be a combination of an acid component comprising at least one selected from the group consisting of 3,3′,4,4′-biphenyltetracarboxylic dianhydride, and pyromellitic dianhydride, and a diamine component comprising at least one selected from the group consisting of p-phenylenediamine, 4,4′-diaminodiphenyl ether, and 3,4′-diaminodiphenyl ether.
The combination of the acid component and the diamine component constituting the polyimide (b) may be the same as, or different from the combination of the acid component and the diamine component constituting the polyimide (a).
The polyimide (b) and the polyimide (a) to be used may be preferably a heat-resistant polyimide having a glass transition temperature of 250° C. or higher, more preferably 270° C. or higher, further preferably 300° C. or higher, further preferably 320° C. or higher, particularly preferably 330° C. or higher, or having a glass transition temperature undetected at a temperature lower than 250° C., more preferably lower than 270° C., further preferably lower than 300° C., further preferably lower than 320° C., particularly preferably lower than 330° C. When using the heat-resistant polyimide as described above, a chip may be mounted thereon at a high temperature with Au—Au connection or Au—Sn connection without embedding a metal wiring in the polyimide layer.
According to the present invention, a polyimide film may be prepared by methods other than thermal imidization; by chemical imidization, or a combination of thermal imidization and chemical imidization.
The polyimide film may be preferably produced by thermal imidization in order to form a self-supporting film having a solvent content within the above-mentioned range and/or an imidization rate within the above-mentioned range, which have the advantage in stretching.
A polyimide precursor may be synthesized by any known method; for example, by random-polymerizing or block-polymerizing substantially equimolar amounts of an acid component such as an aromatic tetracarboxylic dianhydride and a diamine component in an organic solvent. Alternatively, two or more polyimide precursors in which either of these two components is excessive may be prepared, and subsequently, these polyimide precursor solutions may be combined and then mixed under reaction conditions. The polyimide precursor solution thus obtained may be used without any treatment, or alternatively, after removing or adding a solvent, if necessary, to prepare a self-supporting film.
There are no particular restrictions to the polyimide precursor solution (b), so long as it may be cast on a support and converted into a self-supporting film which may be peeled from the support and be stretched in at least one direction. The type, polymerization degree and concentration of the polymer, and the type and concentration of an additive which may be added to the solution, if necessary, and the viscosity of the solution may be appropriately selected.
A polyimide solution may be prepared by any known method.
Any known polymerization solvent may be used as an organic polar solvent for use in the production of the polyimide precursor solution, or the polyimide solution. Examples of the solvent include amides such as N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-diethylacetamide, N,N-dimethylformamide, N,N-diethylformamide and hexamethylsulforamide; sulfoxides such as dimethylsulfoxide and diethylsulfoxide; and sulfones such as dimethylsulfone and diethylsulfone. These solvents may be used alone or in combination of two or more.
The polyimide precursor solution may contain an imidization catalyst, an organic phosphorous-containing compound, a fine particle such as an inorganic fine particle and an organic fine particle, a dehydrating agent, and the like, if necessary.
The polyimide solution may contain an organic phosphorous-containing compound, a fine particle such as an inorganic fine particle and an organic fine particle, and the like, if necessary.
In the case of the polyimide solution (b) and polyimide precursor solution (b) to be used for a base, the concentration of all monomers in the organic polar solvent may be preferably within a range of from 5 wt % to 40 wt %, more preferably from 6 wt % to 35 wt %, particularly preferably from 10 wt % to 30 wt %. In the case of the polyimide precursor solution (a) and polyimide solution (a) to be used for a surface layer, the concentration of all monomers in the organic polar solvent may be preferably within a range of from 1 wt % to 15 wt %, particularly preferably from 2 wt % to 8 wt %.
The polyimide solution (a) or the polyimide precursor solution (a) may be prepared by diluting a polymer solution previously prepared, which has a high monomer concentration, with a solvent.
One example of the process for producing a polyimide precursor is as follows. The polymerization reaction of an acid component such as an aromatic tetracarboxylic dianhydride and an aromatic diamine component may be conducted, for example, by mixing these components in a substantially equimolar ratio, or in a little excess ratio of either one component (an acid component or a diamine component) at a reaction temperature of 100° C. or lower, preferably at a temperature of from 0° C. to 80° C., more preferably from 10° C. to 50° C., for from about 0.2 hours to about 60 hours for reaction, to provide a polyamic acid (polyimide precursor) solution.
In the polymerization reaction of the polyimide (b) and polyimide precursor (b), the solution viscosity may be appropriately selected depending on the intended use (cast, extrusion, etc.) and the purpose of the production. The rotational viscosity, which is measured at a temperature of 30° C., may be preferably within a range of from about 100 poise to about 10000 poise, more preferably from 400 poise to 5000 poise, particularly preferably from 1000 poise to 3000 poise. Accordingly, the polymerization reaction may be preferably conducted to the extent that the desired solution viscosity is achieved.
In the polymerization reaction of the polyimide (a) and polyimide precursor (a), the solution viscosity may be appropriately selected depending on the intended use (cast, extrusion, etc.) and the purpose of the production. The rotational viscosity, which is measured at a temperature of 30° C., may be preferably within a range of from about 0.1 poise to about 5000 poise, more preferably from 0.5 poise to 2000 poise, particularly preferably from 1 poise to 2000 poise. Accordingly, the polymerization reaction may be preferably conducted to the extent that the desired solution viscosity is achieved.
As for the polyimide layer (a), the amount of the surface treatment agent in the polyimide (a), polyimide solution (a), or polyimide precursor solution (a) may be appropriately selected depending on the type of the polyimide layer (b) to be used, and may be preferably within a range of from 1 wt % to 10 wt %, more preferably from 1.5 wt % to 8 wt %, particularly preferably from 3 wt % to 6 wt % relative to 100 wt % of the polyimide solution (a), or polyimide precursor solution (a).
The surface treatment agent may be mixed with the polyimide solution (a), or polyimide precursor solution (a) for use.
Examples of the surface treatment agent include various coupling agents and chelating agents such as a silane-based coupling agent, a borane-based coupling agent, an aluminium-based coupling agent, an aluminium-based chelating agent, a titanate-based coupling agent, a iron-based coupling agent, and a copper-based coupling agent.
Examples of the silane-based coupling agent include epoxysilane-based coupling agents such as γ-glycidoxypropyl trimethoxy silane, y-glycidoxypropyl diethoxy silane, and β-(3,4-epoxycyclohexyl)ethyl trimethoxy silane; vinylsilane-based coupling agents such as vinyl trichloro silane, vinyl tris(β-methoxy ethoxy)silane, vinyl triethoxy silane, and vinyl trimethoxy silane; acrylsilane-based coupling agents such as y-methacryloxypropyl trimethoxy silane; aminosilane-based coupling agents such as N-β-(aminoethyl)-γ-aminopropyl trimethoxy silane, N-βB-(aminoethyl)-y-aminopropylmethyl dimethoxy silane, γ-aminopropyl triethoxy silane, and N-phenyl-γ-aminopropyl trimethoxy silane; y-mercaptopropyl trimethoxy silane, and y-chloropropyl trimethoxy silane. Examples of the titanate-based coupling agent include isopropyl triisostearoyl titanate, isopropyl tridecyl benzenesulfonyl titanate, isopropyl tris(dioctyl pyrophosphate) titanate, tetraisopropyl bis(dioctyl phosphate) titanate, tetra(2,2-diallyloxymethyl-1-butyl) bis(di-tridecyl)phosphate titanate, bis(dioctyl pyrophosphate) oxyacetate titanate, bis(dioctyl pyrophosphate)ethylene titanate, isopropyl trioctanoyl titanate, and isopropyl tricumyl phenyl titanate.
The coupling agent may be preferably a silane-based coupling agent, more preferably an aminosilane-based coupling agents such as y-aminopropyl-triethoxy silane, N-β-(aminoethyl)-γ-aminopropyl-triethoxy silane, N-(aminocarbonyl)-γ-aminopropyl triethoxy silane, N-[β-(phenylamino)-ethyl]-γ-aminopropyl triethoxy silane, N-phenyl-y-aminopropyl triethoxy silane, and N-phenyl-γ-aminopropyl trimethoxy silane. Among them, N-phenyl-γ-aminopropyl trimethoxy silane is particularly preferred.
Examples of the imidization catalyst include substituted or unsubstituted nitrogen-containing heterocyclic compounds, N-oxide compounds of the nitrogen-containing heterocyclic compounds, substituted or unsubstituted amino acid compounds, hydroxyl-containing aromatic hydrocarbon compounds, and aromatic heterocyclic compounds. Particularly preferable examples of the imidization catalyst include lower-alkyl imidazoles such as 1,2-dimethylimidazole, N-methylimidazole, N-benzyl-2-methylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole and 5-methylbenzimidazole; benzimidazoles such as N-benzyl-2-methylimidazole; and substituted pyridines such as isoquinoline, 3,5-dimethylpyridine, 3,4-dimethylpyridine, 2,5-dimethylpyridine, 2,4-dimethylpyridine and 4-n-propylpyridine. The amount of the imidization catalyst to be used is preferably about 0.01 to 2 equivalents, particularly preferably about 0.02 to 1 equivalents relative to the amide acid unit in a polyamide acid. When the imidization catalyst is used, the polyimide film obtained may have improved properties, particularly extension and edge-cracking resistance.
Examples of the organic phosphorous-containing compound include phosphates such as monocaproyl phosphate, monooctyl phosphate, monolauryl phosphate, monomyristyl phosphate, monocetyl phosphate, monostearyl phosphate, triethyleneglycol monotridecyl ether monophosphate, tetraethyleneglycol monolauryl ether monophosphate, diethyleneglycol monostearyl ether monophosphate, dicaproyl phosphate, dioctyl phosphate, dicapryl phosphate, dilauryl phosphate, dimyristyl phosphate, dicetyl phosphate, distearyl phosphate, tetraethyleneglycol mononeopentyl ether diphosphate, triethyleneglycol monotridecyl ether diphosphate, tetraethyleneglycol monolauryl ether diphosphate, and diethyleneglycol monostearyl ether diphosphate; and amine salts of these phosphates. Examples of the amine include ammonia, monomethylamine, monoethylamine, monopropylamine, monobutylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, monoethanolamine, diethanolamine and triethanolamine.
Examples of the particle include organic particles and inorganic particles.
Examples of the organic particle include particles of organic materials which are insoluble in the polyimide solution and the polyimide precursor solution; specifically particles of polymer compounds such as particles of polyimides and particles of aramids, and particles of cross-linked resins such as epoxy resins.
Examples of the inorganic fine particle include particulate inorganic oxide powders such as titanium dioxide powder, silicon dioxide (silica) powder, magnesium oxide powder, aluminum oxide (alumina) powder and zinc oxide powder; particulate inorganic nitride powders such as silicon nitride powder and titanium nitride powder; inorganic carbide powders such as silicon carbide powder; and particulate inorganic salt powders such as calcium carbonate powder, calcium sulfate powder and barium sulfate powder. These inorganic fine particles may be used in combination of two or more. These inorganic fine particles may be homogeneously dispersed using the known means.
The polyimide film for metallizing of the present invention may be used without any treatment, or may be used after subjecting the polyimide layer (a) or the polyimide layer (b) to surface treatment such as corona discharge treatment, low-temperature plasma discharge treatment, atmospheric-pressure plasma discharge treatment, and chemical etching, as necessary.
A metal layer may be formed directly on the polyimide film, for example, by forming a metal layer on the polyimide film by a metallizing method such as sputtering and vapor deposition of metal, and then subjecting the metal layer to electroless plating or electrolytic plating.
The metallizing method is a method for forming a metal layer, which is different from metal plating or metal foil lamination, and any known method such as vapor deposition, sputtering, ion plating and electron-beam evaporation may be employed.
Examples of a metal to be used in the metallizing method include, but not limited to, metals such as copper, nickel, chromium, manganese, aluminum, iron, molybdenum, cobalt, tungsten, vanadium, titanium and tantalum, and alloys thereof, and metal compounds such as oxides and carbides of these metals. A thickness of a metal layer formed by a metallizing method may be appropriately selected depending on the intended use, and may be preferably from 1 nm to 500 nm, more preferably from 5 nm to 200 nm for a practical use. The number of metal layers formed by a metallizing method may be appropriately selected depending on the intended use, and may be one, two, three or more layers.
In the case where a metal layer is formed on the polyimide layer (a) of the polyimide film by a metallizing method, it is preferred that a metal layer, which is a layer of metal including nickel, chromium, manganese, aluminum, iron, molybdenum, cobalt, tungsten, vanadium, titanium and tantalum, or alloys thereof, or metal compounds such as oxides and carbides thereof is formed on the polyimide layer (a), and then a copper layer or a copper alloy layer is formed on the metal layer.
A metal-plated layer such as a copper-plated layer and a tin-plated layer may be formed by a known wet plating process such as electrolytic plating and electroless plating on the surface of the metal layer of the metal-laminated polyimide film, which is produced by a metallizing method. The thickness of the metal-plated layer such as a copper-plated layer may be preferably from 1 μm to 40 μm for a practical use.
A polyimide film for metallizing, a polyimide film-metal laminate, and a wiring board according to the present invention may be suitably used as an insulating substrate material for FPC, TAB, COF, a metal-wiring board and the like, a cover material for a metal wiring, a chip such as an IC chip and the like, and a base material for a liquid crystal display, an organic electroluminescent display, an electronic paper, a solar cell and the like.
The metal layer on one side or both sides of the polyimide-metal laminate according to the present invention may be partially removed by any known method, for example, by etching, to provide a wiring member having a metal wiring formed on the film.
The wiring member may preferably have most of the metal wirings, or the metal wirings to be connected to an IC chip, or the metal wirings on the periphery thereof, which are formed along the direction perpendicular to the stretching direction, in view of the greater precision in thermal expansion.
At least one chip member such as an IC chip may be mounted on, or connected to the wiring member for use.
A covering member which covers other wirings may be laminated on the wiring member for use.
Examples of the chip member such as an IC chip include any known chip member, for example, semiconductor chips such as a silicon chip, and semiconductor chips of various functions such as for liquid crystal display driver, for system and for memory.
A resistor, a capacitor, and the like, in addition to a chip member, may be mounted on the polyimide film for metallizing, the polyimide film-metal laminate, and the wiring board according to the present invention.
A polyimide-metal laminate produced using a polyimide film, which is produced by the production process of the present invention and has a thermal expansion coefficient in the width direction lower than in the length direction, may be suitably used for a wiring member having a metal wiring at least along the direction of the length.
A wiring member may be produced by forming a metal layer on a polyimide film, which is produced by the production process of the present invention and has a thermal expansion coefficient in the width direction lower than in the length direction, by a metallizing method; and then removing a part of the metal layer to form a metal wiring mainly along the direction of the length. The polyimide film of the present invention may be particularly suitably used for connecting to an IC chip or a glass substrate.
The present invention will be described in more detail below with reference to the Examples. However, the present invention is not limited to these Examples.
The properties of a self-supporting film and a polyimide film were evaluated as follows.
A self-supporting film was heated at 400° C. for 30 min in an oven. The solvent content of the self-supporting film was calculated from the weight of the film before the heat treatment (W1) and the weight of the film after the heat treatment (W2) by the following formula (1).
Solvent content (%)=(W1−W2)/W1×100 (1)
IR-ATR spectra of a self-supporting film and the fully-imidized film thereof were measured with a ZnSe, using FT-IR-4100 made by Jasco Corporation. The peak areas in the range of 1560.13 cm−1 to 1432.85 cm−1 were measured as X1, and the peak areas in the range of 1798.30 cm−1 to 1747.19 cm−1 were measured as X2. The imidization rate of the self-supporting film was calculated from the area ratio (X1/X2) of the self-supporting film and the area ratio (X1/X2) of the fully-imidized film by the following formula (2). The measurements were carried out on both sides of the films, and an average value of the both sides was defined as the imidization rate. (The peak areas were measured using a software installed in the measuring instrument.)
The fully-imidized film was prepared by heating the self-supporting film at 480° C. for 5 min. The support side when the polyimide precursor solution was cast on the support was taken as side A of the film, while the gas side was taken as side B of the film.
Imidization rate of a self-supporting film (%)=(a1/a2+b1/b2)×50 (2)
wherein
a1 represents the area ratio (X1/X2) of side A of the self-supporting film;
b1 represents the area ratio (X1/X2) of side B of the self-supporting film;
a2 represents the area ratio (X1/X2) of side A of the fully-imidized film; and
b2 represents the area ratio (X1/X2) of side B of the fully-imidized film; wherein
X1 represents the peak areas in the range of 1560.13 cm−1 to 1432.85 cm−1; and
X2 represents the peak areas in the range of 1798.30 cm−1 to 1747.19 cm−1.
The average thermal expansion coefficient from 50° C. to 200° C. was measured, using TMA/SS6100 made by Seiko Instruments Inc., when the polyimide film was heated at the rate of 20° C./min.
The 90° peel strength was measured in an air-conditioned atmosphere at 23° C., using a sample piece with a width of 2-10 mm, in accordance with JIS C6471, Method A for strength of peeling a copper foil.
Equimolar amounts of 3,3′,4,4′-biphenyltetracarboxylic dianhydride (s-BPDA) and p-phenylenediamine (PPD) were polymerized at 30° C. for 3 hours in N,N-dimethylacetamide, to give a polyamic acid solution having a concentration of 18 wt %. To the polyamic acid solution were added 0.1 parts by weight of triethanolamine salt of monostearyl phosphate, and then 0.5 parts by weight of silica filler (average particle size: 0.08 μm, ST-ZL made by Nissan Chemical Industries, Ltd.) relative to 100 parts by weight of the polyamic acid. The resulting mixture was homogeneously mixed, to give a polyimide precursor solution (X).
Equimolar amounts of 3,3′,4,4′-biphenyltetracarboxylic dianhydride and p-phenylenediamine were polymerized at 30° C. for 3 hours in N,N-dimethylacetamide, to give a polyamic acid solution having a concentration of 3.0 wt %. To the polyamic acid solution were added 0.5 parts by weight of silica filler (average particle size: 0.08 μm, ST-ZL made by Nissan Chemical Industries, Ltd.) relative to 100 parts by weight of the polyamic acid, and y-phenylaminopropyl trimethoxy silane in a ratio of 3 wt % solution concentration. The resulting mixture was homogeneously mixed, to give a polyimide precursor solution (Y1).
Equimolar amounts of 3,3′,4,4′-biphenyltetracarboxylic dianhydride and 4,4′-diaminodiphenyl ether (DADE) were polymerized at 30° C. for 3 hours in N,N-dimethylacetamide, to give a polyamic acid solution having a concentration of 3.0 wt %. To the polyamic acid solution were added 0.5 parts by weight of silica filler (average particle size: 0.08 μm, ST-ZL made by Nissan Chemical Industries, Ltd.) relative to 100 parts by weight of the polyamic acid, and y-phenylaminopropyl trimethoxy silane in a ratio of 3 wt % solution concentration. The resulting mixture was homogeneously mixed, to give a polyimide precursor solution (Y2).
Equimolar amounts of 3,3′,4,4′-biphenyltetracarboxylic dianhydride and p-phenylenediamine were polymerized at 30° C. for 3 hours in N,N-dimethylacetamide, to give a polyamic acid solution having a concentration of 3.0 wt %. To the polyamic acid solution were added 0.5 parts by weight of silica filler (average particle size: 0.08 μm, ST-ZL made by Nissan Chemical Industries, Ltd.) relative to 100 parts by weight of the polyamic acid. The resulting mixture was homogeneously mixed, to give a polyimide precursor solution (Y3).
The polyimide precursor solution (X) of Reference Example 1, which was prepared as a dope for a base film, was continuously cast on a stainless substrate (support) so that the thickness of the film was 35 μm after heating/drying, and then dried under hot air at 140° C. and peeled off from the support, to form a self-supporting film. Subsequently, the polyimide precursor solution (Y1) of Reference Example 2 was applied, by means of a die coater, on a side of the self-supporting film which had been in contact with the support, so that the thickness of the layer was 0.5 μm after drying. After coating, the self-supporting film was gradually heated from 200° C. to 575° C. in a heating oven for solvent removal and imidization, while the self-supporting film was stretched in the width direction at a stretch ratio of 7%, to give a stretched polyimide film. The thermal expansion coefficient of the stretched polyimide film was measured, and the result is shown in Table 1. The stretched polyimide film was continuously produced.
The self-supporting film had a solvent content of 32 wt % and an imidization rate of 25%.
(Formation of Metal Layer by Metallizing Method)
The surface of the stretched polyimide film, on which the polyimide precursor solution had been applied, was cleaned by plasma treatment. And then, as a metal layer, a nickel-chrome alloy layer having a chrome content of 15 wt % and a thickness of 5 nm was formed on the cleaned surface by sputtering. Subsequently, a copper layer having a thickness of 300 nm was formed on the nickel-chrome alloy layer by sputtering. And then, a copper-plated layer having a thickness of 20 μm was formed on the metal layer by electrolytic copper plating, to give a copper-plating laminated polyimide film. The adhesion strength (90° peel strength) between the copper-plated layer and the polyimide of the copper-plating laminated polyimide film was measured, and the result is shown in Table 1.
A stretched polyimide film was prepared in the same way as in Example 1, except that the polyimide precursor solution (Y2) of Reference Example 3 was used as a polyimide precursor solution for surface coating. The thermal expansion coefficient of the stretched polyimide film was measured, and the result is shown in Table 1.
A copper-plated layer was formed on the surface of the stretched polyimide film obtained in the same way as in Example 1, to give a copper-plating laminated polyimide film. The adhesion strength (90° peel strength) of the copper-plating laminated polyimide film was measured in the same way as in Example 1, and the result is shown in Table 1.
The polyimide precursor solution (X) of Reference Example 1, which was prepared as a dope for a base film, was continuously cast on a stainless substrate (support) so that the thickness of the film was 35 μm after heating/drying, and then dried under hot air at 140° C. and peeled off from the support, to form a self-supporting film. Subsequently, 3 wt % solution of y-phenylaminopropyl trimethoxy silane in N,N-dimethylacetamide, which contained no polyimide precursor, was applied in an amount of 7 g/m2, by means of a die coater, on a side of the self-supporting film which had been in contact with the support, and then the self-supporting film was dried. After coating, the self-supporting film was gradually heated from 200° C. to 575° C. in a heating oven for solvent removal and imidization, to give an unstretched polyimide film. The thermal expansion coefficient of the unstretched polyimide film was measured, and the result is shown in Table 1. The unstretched polyimide film was continuously produced.
A copper-plated layer was formed on the surface of the unstretched polyimide film obtained in the same way as in Example 1, to give a copper-plating laminated polyimide film. The adhesion strength (90° peel strength) of the copper-plating laminated polyimide film was measured in the same way as in Example 1, and the result is shown in Table 1.
A stretched polyimide film was prepared in the same way as in Example 1, except that 3 wt % solution of y-phenylaminopropyl trimethoxy silane in N,N-dimethylacetamide, which contained no polyimide precursor, was applied on a side of the self-supporting film in an amount of 7 g/m2, instead of applying the polyimide precursor solution (Y1) of Reference Example 2. The thermal expansion coefficient of the stretched polyimide film was measured, and the result is shown in Table 1.
A copper-plated layer was formed on the surface of the stretched polyimide film obtained in the same way as in Example 1, to give a copper-plating laminated polyimide film. The adhesion strength (90° peel strength) of the copper-plating laminated polyimide film was measured in the same way as in Example 1, and the result is shown in Table 1.
A stretched polyimide film was prepared in the same way as in Example 1, except that a polyimide precursor solution (Y1) which did not contain y-phenylaminopropyl trimethoxy silane, in other words, a polyimide precursor solution containing no silane coupling agent was used, instead of the polyimide precursor solution (Y1) of Reference Example 2. The thermal expansion coefficient of the stretched polyimide film was measured, and the result is shown in Table 1.
A copper-plated layer was formed on the surface of the stretched polyimide film obtained in the same way as in Example 1, to give a copper-plating laminated polyimide film. The adhesion strength (90° peel strength) of the copper-plating laminated polyimide film was measured in the same way as in Example 1, and the result is shown in Table 1.
A stretched polyimide film was prepared in the same way as in Example 2, except that a polyimide precursor solution (Y2) which did not contain y-phenylaminopropyl trimethoxy silane, in other words, a polyimide precursor solution containing no silane coupling agent was used, instead of the polyimide precursor solution (Y2) of Reference Example 3. The thermal expansion coefficient of the stretched polyimide film was measured, and the result is shown in Table 1.
A copper-plated layer was formed on the surface of the stretched polyimide film obtained in the same way as in Example 1, to give a copper-plating laminated polyimide film. The adhesion strength (90° peel strength) of the copper-plating laminated polyimide film was measured in the same way as in Example 1, and the result is shown in Table 1.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2009-098198 | Apr 2009 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2010/056716 | 4/14/2010 | WO | 00 | 10/14/2011 |
