Claims
- 1. A photoresist composition comprising:a photoactive component and a resin, the resin comprising a substituent that comprises an acidic moiety of a latent acidic moiety that is an amine or a hydroxy amine group, wherein one or more carbons alpha to the acidic moiety of the latent acidic moiety are substituted by one or more electron-withdrawing groups.
- 2. The photoresist composition of claim 1 wherein the substituent comprises an ether group, an acetal group, a ketal group, a formal group, a triether group or a tetraether group.
- 3. The photoresist composition of claim 1 wherein the substituent group is linked by multiple single bonds to the resin backbone.
- 4. The photoresist composition of claim 1 wherein the substituent group is linked by one single bond to the resin backbone.
- 5. The photoresist composition of claim 1 wherein the substituent corresponds to the following Formula (IA): wherein each R is independently hydrogen or a non-hydrogen substituent, with at least one R linked to the resin;at least one of X and Y is an electron-withdrawing group, and at least one of X′ and Y′ is an electron withdrawing group.
- 6. The photoresist composition of claim 1 wherein the substituent corresponds to the following Formula (IB): wherein each R is independently hydrogen or a non-hydrogen substituent, with at least one R linked to the resin;at least one of X and Y is an electron-withdrawing group, and at least one of X′ and Y′ is an electron withdrawing group.
- 7. The photoresist composition of claim 1 wherein the resin is at least substantially free of aromatic groups.
- 8. The photoresist composition of claim 1 wherein the resin comprises aromatic groups.
- 9. A photoresist composition comprising:a photoactive component and a resin, the resin comprising i) aromatic groups and ii) a substituent that comprises an acidic moiety of a latent acidic moiety and the substituent group linked by multiple single bonds to the resin backbone, wherein one or more carbons alpha to the acidic moiety of the latent acidic moiety are substituted by one or more electron-withdrawing groups.
- 10. The photoresist composition of claim 9 wherein the acidic moiety of latent acidic moiety is an lacohol group, an amine group or a hydroxyl amine group.
- 11. The photoresist composition of claim 9 wherein the substituent comprises an ether group, an acetal group, a ketal group, a formal group, a triether group or a tetraether group.
- 12. A method for forming a photoresist relief image comprising:(a) applying a coating layer of a photoresist composition of any one of claims 1 through 11 on a substrate; and (b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.
- 13. The method of claim 12 wherein the photoresist layer is exposed to radiation having a wavelength of less than about 200 nm.
- 14. An article of manufacture having on at least one surface a coating layer of the photoresist composition of any one of claims 1 through 11.
- 15. The article of claim 14 wherein the article is a microelectronic wafer.
Parent Case Info
This application claims the benefit of U.S. Provisional Application(s) No(s).: Application No. 60/231,046 filing date Sep. 8, 2000 Applicatin No. 60/252,662 filing date Nov. 22, 2000.
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Entry |
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Provisional Applications (2)
|
Number |
Date |
Country |
|
60/252662 |
Nov 2000 |
US |
|
60/231046 |
Sep 2000 |
US |