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4656731 | Lam et al. | Apr 1987 | A |
6127212 | Chen et al. | Oct 2000 | A |
6133128 | Das et al. | Oct 2000 | A |
6214656 | Liaw | Apr 2001 | B1 |
Entry |
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Travel et al., Totally Silicided (CoSi2) Polysilicon: a novel approach to very low-resistive gate (˜2 ohms/square) without metal CMP nor etching, IEEE, 2001. |