isolation region manufacturing related aspects

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/823878isolation region manufacturing related aspects

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Patents Grantslast 30 patents

Information Patent Grant
Methods of forming contact features in field-effect transistors
- Patent number 12,272,605
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Hsiung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,272,606
- Issue date Apr 8, 2025
- Samsung Electronics Co., Ltd.
- Sangmin Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D selective material transformation to integrate 2D material elements
- Patent number 12,272,692
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate isolation for multigate device
- Patent number 12,272,690
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,272,693
- Issue date Apr 8, 2025
- United Microelectronics Corp.
- Chun-Ya Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation structure and method of making the same
- Patent number 12,266,577
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Ling Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of manufacture
- Patent number 12,266,576
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact formed using bottom-...
- Patent number 12,266,688
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices by etching active fi...
- Patent number 12,261,087
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Min-Chul Sun
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 12,255,247
- Issue date Mar 18, 2025
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation structure
- Patent number 12,255,205
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chieh-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and methods of forming the same
- Patent number 12,243,786
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming source/drain features
- Patent number 12,237,232
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,237,235
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Seongkyung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 12,230,634
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,224,348
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with multiple silicid...
- Patent number 12,218,012
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device
- Patent number 12,218,224
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,218,129
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,218,210
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,752
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam free isolation structures and method for making the same
- Patent number 12,199,097
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device integration with separated fin-like field effect...
- Patent number 12,199,100
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architecture having gate contacts
- Patent number 12,199,101
- Issue date Jan 14, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel gate all around transistor device and fabrication meth...
- Patent number 12,198,986
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE/DRAIN ISOLATION OF TOP AND BOTTOM TIERS OF 3D FIELD-EFFECT T...
- Publication number 20250072098
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072107
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- SUNGIL PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072100
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Te TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250072067
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-CHENG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072031
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063811
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250063783
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063810
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20250063813
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hsuan Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING FET STRUCTURE
- Publication number 20250063806
- Publication date Feb 20, 2025
- Huawei Technologies Co., Ltd
- Yijian CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250056877
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...
- Publication number 20250056783
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING FIN-THINNING THROUGH FEEDBACK
- Publication number 20250056823
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsu-Hui Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING BOTTOM DIELECTRIC ISOLATION LAYERS
- Publication number 20250056871
- Publication date Feb 13, 2025
- Applied Materials, Inc.
- San-Kuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250056893
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048704
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250048689
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR REMOVAL OF SUBSTRATE IN STACKING TRANSISTORS AN...
- Publication number 20250048716
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) DEVI...
- Publication number 20250048718
- Publication date Feb 6, 2025
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20250048728
- Publication date Feb 6, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- FEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHOD...
- Publication number 20250048611
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One-Time Programming Memory Device with Backside Isolation Structure
- Publication number 20250048686
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH INTERNAL CONNECTION STRUCTURE
- Publication number 20250038071
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Cheng TZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250031435
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION BETWEEN DEVICE AREAS
- Publication number 20250022746
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS
- Publication number 20250022881
- Publication date Jan 16, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS

isolation region manufacturing related aspects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of forming contact features in field-effect transistors

Semiconductor device

3D selective material transformation to integrate 2D material elements

Gate isolation for multigate device

Semiconductor device and method for fabricating the same

Deep trench isolation structure and method of making the same

Semiconductor device and methods of manufacture

Semiconductor device with source/drain contact formed using bottom-...

Methods of manufacturing semiconductor devices by etching active fi...

Trench contact structures for advanced integrated circuit structure...

Semiconductor device with isolation structure

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device and methods of forming the same

Methods for forming source/drain features

Semiconductor device

Semiconductor devices and methods of fabricating the same

Semiconductor device structure and method for forming the same

Three-dimensional semiconductor device and method of fabricating th...

Method of manufacturing semiconductor devices with multiple silicid...

Method for forming semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device

FinFET device and method of forming same

Field effect transistors comprising a matrix of gate-all-around cha...

Seam free isolation structures and method for making the same

Multi-gate device integration with separated fin-like field effect...

Self-aligned gate endcap (SAGE) architecture having gate contacts

Gate line plug structures for advanced integrated circuit structure...

Plugs for interconnect lines for advanced integrated circuit struct...

Dual channel gate all around transistor device and fabrication meth...

Patents Applicationslast 30 patents

SOURCE/DRAIN ISOLATION OF TOP AND BOTTOM TIERS OF 3D FIELD-EFFECT T...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR DEVICE

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

METHOD FOR PRODUCING FET STRUCTURE

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...

CONTROLLING FIN-THINNING THROUGH FEEDBACK

METHODS OF FORMING BOTTOM DIELECTRIC ISOLATION LAYERS

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE...

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

ETCH STOP LAYER FOR REMOVAL OF SUBSTRATE IN STACKING TRANSISTORS AN...

METHOD FOR MAKING COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) DEVI...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHOD...

One-Time Programming Memory Device with Backside Isolation Structure

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

INTEGRATED CIRCUIT WITH INTERNAL CONNECTION STRUCTURE

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

ISOLATION BETWEEN DEVICE AREAS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP