with a particular manufacturing method of the source or drain structures

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H01L21/823814

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823814with a particular manufacturing method of the source or drain structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device integration with separated fin-like field effect...
- Patent number 12,199,100
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation with reduced dopant loss and increased dimensions
- Patent number 12,199,156
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,040
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Hyeongyu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate electrode for applying tensile...
- Patent number 12,198,987
- Issue date Jan 14, 2025
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip-flop with transistors having different threshold voltages, sem...
- Patent number 12,199,612
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xing Chao Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 12,191,308
- Issue date Jan 7, 2025
- Tahoe Research, LTD.
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,191,380
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low Ge isolated epitaxial layer growth over nano-sheet architecture...
- Patent number 12,191,393
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yan-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing fin spacers having different heights using...
- Patent number 12,191,206
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of high density 3D circuits with enhanced 3D conductivity
- Patent number 12,191,210
- Issue date Jan 7, 2025
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field-effect transistors
- Patent number 12,183,740
- Issue date Dec 31, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of formation
- Patent number 12,183,640
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,741
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,742
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Yoon Tae Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of performing gap filling including filling trenches between...
- Patent number 12,183,590
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside power rail structure and methods of forming same
- Patent number 12,183,678
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned hybrid substrate stacked gate-all-around transistors
- Patent number 12,176,348
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D nano sheet method using 2D material integrated with conductive o...
- Patent number 12,176,249
- Issue date Dec 24, 2024
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual contact process with stacked metal layers
- Patent number 12,170,319
- Issue date Dec 17, 2024
- Intel Corporation
- Kevin Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation layers in stacked semiconductor devices
- Patent number 12,166,037
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,166,038
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shun-Jang Liao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...
- Publication number 20250022773
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- JINTAE KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA DENSE 3D ROUTING FOR COMPACT 3D DESIGNS
- Publication number 20250022756
- Publication date Jan 16, 2025
- TOKYO ELECTRON LIMITED
- H. Jim FULFORD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Forming Contact Structure In Semiconductor Devices
- Publication number 20250022925
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIR SPACER AND METHOD FOR FORMING THE...
- Publication number 20250015132
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi-Sheng Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...
- Publication number 20250006737
- Publication date Jan 2, 2025
- Intel Corporation
- Aryan Navabi-Shirazi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...
- Publication number 20250006561
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006815
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kao-Cheng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH DIFFERENTIAL EPITAXIAL SOURCE OR...
- Publication number 20250006733
- Publication date Jan 2, 2025
- Intel Corporation
- Swapnadip GHOSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH LOW CONTACT VIA RESISTANCE AND METHO...
- Publication number 20250006742
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuting CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE WITH NITROGEN-CONTAINING INTERFACIAL LAYER AND MANUF...
- Publication number 20250006816
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hsiang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIAXIAL OXIDE DIRECTION COMPLEMENTARY FIELD EFFECT TRANSISTOR
- Publication number 20240429279
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR
- Publication number 20240429226
- Publication date Dec 26, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES
- Publication number 20240429283
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...
- Publication number 20240429299
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNNELED SOURCE/DRAIN INTERFACIAL REGION
- Publication number 20240421191
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...
- Publication number 20240413220
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413158
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- SUNGMIN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TUNABLE EPITAXY STRUCTURES AND METHOD OF...
- Publication number 20240413018
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CFETS AND THE METHODS OF FORMING THE SAME
- Publication number 20240413019
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Yun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...
- Publication number 20240413223
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR REDUCING RANDOM DOPAN...
- Publication number 20240413004
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- Yu Jie JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SINK FOR STACKED MULTI-GATE DEVICE
- Publication number 20240413039
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...
- Publication number 20240413155
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the source or drain structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device structure with source/drain structure and meth...

Multi-gate device integration with separated fin-like field effect...

Contact formation with reduced dopant loss and increased dimensions

Gate line plug structures for advanced integrated circuit structure...

Semiconductor device

Semiconductor device including gate electrode for applying tensile...

Flip-flop with transistors having different threshold voltages, sem...

Plugs for interconnect lines for advanced integrated circuit struct...

Non-planar semiconductor device having doped sub-fin region and met...

Reducing off-state leakage in semiconductor devices

Semiconductor device and method

Low Ge isolated epitaxial layer growth over nano-sheet architecture...

Method of manufacturing fin spacers having different heights using...

Formation of high density 3D circuits with enhanced 3D conductivity

Stacked field-effect transistors

Semiconductor device and methods of formation

Semiconductor device

Semiconductor device

Method of performing gap filling including filling trenches between...

Backside power rail structure and methods of forming same

Source/drain feature separation structure

Self-aligned hybrid substrate stacked gate-all-around transistors

3D nano sheet method using 2D material integrated with conductive o...

Stacked semiconductor device with nanostructure channels

Semiconductor device with fin transistors and manufacturing method...

Dual contact process with stacked metal layers

Semiconductor device and method

Gate structure and methods thereof

Isolation layers in stacked semiconductor devices

Semiconductor device and a method for fabricating the same

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...

ULTRA DENSE 3D ROUTING FOR COMPACT 3D DESIGNS

Methods Of Forming Contact Structure In Semiconductor Devices

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR STRUCTURE WITH AIR SPACER AND METHOD FOR FORMING THE...

STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...

STACKED MULTI-GATE DEVICE WITH REDUCED CONTACT RESISTANCE AND METHO...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD

INTEGRATED CIRCUIT STRUCTURES WITH DIFFERENTIAL EPITAXIAL SOURCE OR...

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

STACKED MULTI-GATE DEVICE WITH LOW CONTACT VIA RESISTANCE AND METHO...

STACKED DEVICE WITH NITROGEN-CONTAINING INTERFACIAL LAYER AND MANUF...

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

USER MODEL-BASED DATA LOSS PREVENTION

BIAXIAL OXIDE DIRECTION COMPLEMENTARY FIELD EFFECT TRANSISTOR

PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR

BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES

SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH TUNABLE EPITAXY STRUCTURES AND METHOD OF...

CFETS AND THE METHODS OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR REDUCING RANDOM DOPAN...

HEAT SINK FOR STACKED MULTI-GATE DEVICE

STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...