with a particular manufacturing method of the source or drain structures

Industry

CPC
H01L21/823814

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823814with a particular manufacturing method of the source or drain structures

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structures having partitioned source or drain co...
- Patent number 12,230,717
- Issue date Feb 18, 2025
- Intel Corporation
- Mauro J. Kobrinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,224,348
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide structures in transistors and methods of forming
- Patent number 12,224,330
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type field effect transistor (PFET) on a silicon germanium (Ge) b...
- Patent number 12,224,347
- Issue date Feb 11, 2025
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,218,223
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Choongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with multiple silicid...
- Patent number 12,218,012
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 12,218,138
- Issue date Feb 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a Fin at a S/D region and a semiconduct...
- Patent number 12,218,136
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with backside interconnections and method of mak...
- Patent number 12,218,057
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for gate-all-around metal-oxide-semiconductor...
- Patent number 12,218,137
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming contact metal
- Patent number 12,211,747
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 12,211,853
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fish bone structure and methods of formin...
- Patent number 12,211,944
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with threshold voltage modulation layer
- Patent number 12,213,297
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channel pattern formed of stacked semicon...
- Patent number 12,211,941
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Donghyuk Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device integration with separated fin-like field effect...
- Patent number 12,199,100
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation with reduced dopant loss and increased dimensions
- Patent number 12,199,156
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,040
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Hyeongyu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate electrode for applying tensile...
- Patent number 12,198,987
- Issue date Jan 14, 2025
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip-flop with transistors having different threshold voltages, sem...
- Patent number 12,199,612
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xing Chao Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
- Patent number 12,191,308
- Issue date Jan 7, 2025
- Tahoe Research, LTD.
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Etching method of semiconductor structure
- Publication number 20250062132
- Publication date Feb 20, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- Yanjie Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT RESISTANCE REDUCTION
- Publication number 20250062161
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS
- Publication number 20250063779
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250063783
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250062192
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...
- Publication number 20250056852
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250056840
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE AND INTEGRATED CIRCUIT TEST USING SAME
- Publication number 20250054817
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Wei-Kuan Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250056893
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20250048728
- Publication date Feb 6, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- FEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One-Time Programming Memory Device with Backside Isolation Structure
- Publication number 20250048686
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250048706
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Jui WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD
- Publication number 20250040183
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside Contact and Metal over Diffusion
- Publication number 20250038070
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS
- Publication number 20250038111
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040214
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040241
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sung Il PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYERS IN SEMICONDUCTOR DEVICES
- Publication number 20250031399
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mu-Min Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION
- Publication number 20250031413
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...
- Publication number 20250031436
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250031404
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hsuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250031405
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Hojun CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250031435
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...
- Publication number 20250031403
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR
- Publication number 20250031445
- Publication date Jan 23, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the source or drain structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit structures having partitioned source or drain co...

Semiconductor device structure and method for forming the same

Silicide structures in transistors and methods of forming

P-type field effect transistor (PFET) on a silicon germanium (Ge) b...

Three-dimensional semiconductor device and method of fabricating th...

Method of manufacturing semiconductor device

Method of manufacturing semiconductor devices with multiple silicid...

Air gap formation between gate spacer and epitaxy structure

Semiconductor device having a Fin at a S/D region and a semiconduct...

Integrated circuit with backside interconnections and method of mak...

Structure and method for gate-all-around metal-oxide-semiconductor...

Method of forming contact metal

Integrated circuit devices and fabrication techniques

Semiconductor device with fish bone structure and methods of formin...

Integrated circuit devices having highly integrated NMOS and PMOS t...

Semiconductor device having a doped fin well

Field effect transistors comprising a matrix of gate-all-around cha...

Method for manufacturing FinFETs by fin-recessing processes to form...

Semiconductor devices with threshold voltage modulation layer

Semiconductor device with channel pattern formed of stacked semicon...

Semiconductor device structure with source/drain structure and meth...

Multi-gate device integration with separated fin-like field effect...

Contact formation with reduced dopant loss and increased dimensions

Gate line plug structures for advanced integrated circuit structure...

Semiconductor device

Semiconductor device including gate electrode for applying tensile...

Flip-flop with transistors having different threshold voltages, sem...

Plugs for interconnect lines for advanced integrated circuit struct...

Non-planar semiconductor device having doped sub-fin region and met...

Reducing off-state leakage in semiconductor devices

Patents Applicationslast 30 patents

Etching method of semiconductor structure

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

BACKSIDE CONTACT RESISTANCE REDUCTION

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS

CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

TEST STRUCTURE AND INTEGRATED CIRCUIT TEST USING SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

One-Time Programming Memory Device with Backside Isolation Structure

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD

Backside Contact and Metal over Diffusion

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

BARRIER LAYERS IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...

LOW COST, HIGH PERFORMANCE ANALOG METAL OXIDE SEMICONDUCTOR TRANSISTOR