Claims
- 1. A positive photoresist composition consisting essentially of an admixture of (a) a photosensitizer of 1,2-naphthoquinone diazides photosensitive-material comprising an ester of 2,3,4,4'-tetrahydroxybenzophenone in which, on the average, not less than two hydroxyl groups of 2,3,4,4'-tetrahydroxybenzophenone have been esterified by 1,2-naphthoquinonediazide-5-sulfonic acid and (b) a novolak resin obtained by condensing a mixture of 10 to 80 mol % of m-cresol, 10 to 80 mol % of p-cresol and 10 to 80 mol % of 2,5-xylenol with formaldehyde, the weight ratio of said 1,2-naphthoquinone diazides photosensitive-material to said novolak resin being in the range of 15/100 to 60/100.
- 2. A positive photoresist composition according to claim 1, wherein the weight-average molecular weight of said novolak resin is in the range of 1,000 to 30,000.
- 3. A positive photoresist composition according to claim 1, wherein said 1,2-naphthoquinone diazides photosensitive-material is an esterified 2,3,4,4'-tetrahydroxybenzophenone in which, on the average 2.5 to 3.5 hydroxy groups of 2,3,4,4'-tetrahydroxybenzophenone have been esterified by 1,2-naphthoquinonediazide-5-sulfonic acid.
- 4. A positive photoresist composition according to claim 1, wherein the weight ratio of said 1,2-naphthoquinone diazides photosensitive material to said novolak resin is in the range of 20/100 to 55/100.
Priority Claims (1)
Number |
Date |
Country |
Kind |
60-25660 |
Feb 1985 |
JPX |
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CROSS REFERENCE TO RELATED APPLICATION
The present invention is a continuation-in-part application of U.S. patent application No. 825,902 filed Feb. 4, 1986, now U.S. Pat. No. 4,719,167, granted Jan. 12, 1988.
US Referenced Citations (17)
Foreign Referenced Citations (1)
Number |
Date |
Country |
60-164740 |
Aug 1985 |
JPX |
Non-Patent Literature Citations (1)
Entry |
English translation of Japanese Publication #60-164,740, Published 8/27/1985. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
825902 |
Feb 1986 |
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