Claims
- 1. A method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron comprising:
treating the wall with a reactive gas, by exposing the wall to the reactive gas, to cause the wall to become a cladding material and expand outwards from the wall in a defined, uniform manner until a desired size for the feature is achieved.
- 2. The method of claim 1 wherein the feature is a hole defined by the wall.
- 3. The method of claim 3 further comprising one of etching drilling or milling the hole into the wafer material.
- 4. The method of claim 3 wherein the wafer material comprises silicon, and the treating the wall with a reactive gas comprises oxidizing the silicon.
- 5. The method of claim 3 wherein the wafer material comprises silicon, and the treating the wall with a reactive gas comprises forming the cladding of a silicon oxy-nitride.
- 6. The method of claim 3 where in the wafer material comprises silicon, and the treating the wall with a reactive gas comprises forming the cladding of a silicon nitride.
- 7. The method of claim 3 wherein the treating is performed for a time sufficient for the cladding to be between about 1 micron and about 10 microns thick.
- 8. The method of claim 3 wherein the treating is performed for a time sufficient for the cladding to be between about 1 micron and about 2 microns thick.
- 9. The method of claim 3 wherein the treating is performed for a time sufficient for the cladding to be between about 1.5 microns and about 2 microns thick.
- 10. A method of optimizing a feature, defined by a wall in a wafer material, to an accuracy of better than 1 micron comprising:
depositing a base material on at least part of the wall to facilitate plating of a material on the wall, on top of the base material, in a defined, uniform manner; and plating the at least part of the wall with the material until a desired size for the feature is achieved.
- 11. The method of claim 10 wherein the feature is a hole defined by the wall.
- 12. The method of claim 11 further comprising one of etching drilling or milling the hole into the wafer material.
- 13. The method of claim 10 wherein the plating is performed for a time sufficient for the material on the at least part of the wall to be between about 1 micron and about 10 microns thick.
- 14. The method of claim 10 wherein the plating is performed for a time sufficient for the material on the at least part of the wall to be between about 1 micron and about 2 microns thick.
- 15. The method of claim 10 wherein the plating is performed for a time sufficient for the material on the at least part of the wall to be between about 1.5 microns and about 2 microns thick.
- 16. A light guide comprising:
a guide having a hole optimized according to the method of one of claims 1 through 15.
- 17. A fiber bearing ferrule comprising:
a holder having a hole for an optical fiber, the hole having been optimized according to the method of one of claim 1 through 15.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of commonly assigned U.S. patent application Nos. 09/896,513, 09/896,664, 09/896,196 and 09/896,192, all filed Jun. 29, 2001.
Continuation in Parts (4)
|
Number |
Date |
Country |
Parent |
09896513 |
Jun 2001 |
US |
Child |
10098255 |
Mar 2002 |
US |
Parent |
09896664 |
Jun 2001 |
US |
Child |
10098255 |
Mar 2002 |
US |
Parent |
09896196 |
Jun 2001 |
US |
Child |
10098255 |
Mar 2002 |
US |
Parent |
09896192 |
Jun 2001 |
US |
Child |
10098255 |
Mar 2002 |
US |