Claims
- 1. A method of testing a wafer having a plurality of semiconductor devices, comprising the steps of:contacting an electrode on one of the plurality of semiconductor devices with a movable contact electrode on a probe card; and supplying a test signal to an external connecting terminal on a board of the probe card, through a wiring connecting the external connecting terminal to an external terminal on a periphery of a substrate of the probe card, through a wiring connecting the external terminal to an internal terminal on the substrate, and through a wiring having a level transitioning portion extending from the internal terminal at a level of the substrate and connecting to the contact electrode at a higher level.
- 2. A method of testing a wafer having a plurality of semiconductor devices, said method comprising:contacting an electrode on one of the plurality of semiconductor devices with a contact electrode on a probe card; supplying a test signal to an external connecting terminal on a board of the probe card, through a wiring connecting the external connecting terminal to an external terminal on a periphery of a substrate of the probe card, through a wiring connecting the external terminal to an internal terminal on the substrate, and through a wiring having a level transitioning portion extending from the internal terminal at a level of the substrate and connecting to the contact electrode at a higher level; and heating the wafer and the probe card, and compensating displacements of the internal terminal on the substrate by the level transitioning portion.
- 3. A method of testing a wafer having a plurality of semiconductor devices, said method comprising:contacting an electrode on one of the plurality of semiconductor devices with a contact electrode on a probe card; supplying a test signal to an external connecting terminal on a board of the probe card, through a wiring connecting the external connecting terminal to an external terminal on a periphery of a substrate of the probe card, through a wiring connecting the external terminal to an internal terminal on the substrate, and through a wiring having a level transitioning portion extending from the internal terminal at a level of the substrate and connecting to the contact electrode at a higher level; and heating a flexible substrate of the probe card, the substrate, and the wafer, the contact electrode being disposed on a surface of the flexible substrate facing the wafer, and compensating displacements of the internal terminal on the substrate by the level transitioning portion.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-233109 |
Aug 1999 |
JP |
|
Parent Case Info
This application is a DIVISION of prior application Ser. No. 09/540,870 filed Mar. 31, 2000 U.S. Pat. No. 6,563,330.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5983492 |
Fjelstad |
Nov 1999 |
A |
6263566 |
Hembree et al. |
Jul 2001 |
B1 |