Process for applying a molten droplet coating for integrated circuits

Information

  • Patent Grant
  • 6287985
  • Patent Number
    6,287,985
  • Date Filed
    Friday, October 27, 1995
    29 years ago
  • Date Issued
    Tuesday, September 11, 2001
    23 years ago
Abstract
Disclosed is a method of forming an opaque coating on an integrated circuit or multichip module. A coating composition is prepared and then heated to a temperature sufficient to transform the coating composition to a molten state. Next, the molten coating composition is applied to a surface of the integrated circuit device to form an opaque coating that overlies active circuitry on the surface, to prevent optical and radiation based inspection and reverse engineering of the active circuitry.
Description




BACKGROUND OF THE INVENTION




This invention relates to opaque coatings for electronic devices. In particular, the present invention is an opaque protective coating and method of applying the coating to integrated circuits and multichip modules. The coating inhibits inspection and reverse engineering of integrated circuits and multichip modules.




Opaque coatings and methods of applying opaque coatings to electronic devices to inhibit inspection and reverse engineering are generally known. U.S. Pat. No. 5,399,441 to Bearinger et al. discloses one such method of forming an opaque coating on an integrated circuit. In Bearinger et al., an opaque ceramic coating is formed on an integrated circuit by a wafer level process that includes selectively applying a coating composition comprising a silica precursor resin and a filler onto the surface of complete IC wafer. A wafer is defined here as a slice of semiconductor crystalline ingot used for substrate material when modified by the addition, as applicable, of impurity diffusion (doping), ion implantation, epitaxy, etc., and whose active surface has been processed into arrays of discreet devices or ICs by metallization and passivation. A liquid mixture that includes the silica precursor resin and the filler is selectively applied to the integrated circuit by (1) masking the circuit, applying the liquid mixture and removing the mask, (2) selectively “painting” the circuit or (3) silk screening the circuit.




The coated integrated circuit is then heated at a temperature sufficient to convert the coating composition (i.e., liquid mixture) to a silica containing ceramic matrix having the filler distributed therein. Preferably, the integrated circuit with coating composition thereon is heated in a Lindberg furnace at a temperature within the range of about 50° C. to 425° C. for generally up to six (6) hours, with less than about three (3) hours being preferred, to convert the coating composition to a silica containing ceramic matrix. In Bearinger et al. the preferred silica precursor resin is hydrogen silsesquioxane resin (H-resin). To achieve a coating opaque to radiation, a filler comprising insoluble salts of heavy metals is combined with the silica precursor resin. To achieve a coating impenetrable to visual light, an optically opaque filler is combined with the silica precursor resin.




Because the method of applying the opaque coating to an integrated circuit of Bearinger et al. requires an extensive heating time period to transform the coating composition to a silica containing ceramic matrix, Bearinger, et al.'s method is not particularly cost effective or efficient on a mass production level. Also, the Bearinger coating does not provide full protection since the liquid mixture is applied to the integrated circuit at the wafer level and before assembly of the actual devices into IC or MCM packages. Therefore, protection is not provided for packaging components such as wire bonds, bond pads, and inteconnects.




The U.S. Pat. No. 5,258,334 to Lantz, II discloses another process of applying an opaque ceramic coating to an integrated circuit. In Lantz, II, visual access to the topology of an integrated circuit is denied via an opaque ceramic produced by first mixing opaque particulate with a silica precursor. This mixture is then applied to the surface of the integrated circuit. The coated integrated circuit is then heated to a temperature in the range of 50° C. to 450° C. in an inert environment for a time within the range of one (1) second to six (6) hours to allow the coating to flow across the surface of the integrated circuit without ceramifying. The coated integrated circuit is then heated to a temperature in the range of 20° C. to 1000° C. in a reactive environment for a time in the range of two (2) to twelve (12) hours to allow the coating to ceramify. As with the above described Bearinger et al. patent, the method of applying the opaque coating of Lantz, II is limited with respect to security and is also time consuming and therefore not particularly cost effective nor efficient on a mass production level.




There is a need for improved protective coatings for integrated circuits and multichip modules. In particular, there is a need for an improved protective coating that is abrasion resistant, adherent, radiopaque and optically opaque to prevent inspection and/or reverse engineering of the topology of the integrated circuits and multichip modules. The protective coating should be capable of being applied to integrated circuits and multichip modules in a time efficient and cost effective process to permit coating application on a mass production level.




SUMMARY OF THE INVENTION




The present invention is an opaque coating and a method of forming an opaque coating on a semiconductor integrated circuit device. To form the opaque coating on the integrated circuit device a coating composition is prepared. The coating composition is then heated to a temperature sufficient to transform the coating composition to a molten state. Next, the molten coating composition is applied to a surface of the integrated circuit device to form an opaque coating that overlies active circuitry on the surface so as to prevent optical and radiation based inspection and reverse engineering of the active circuitry.




This protective opaque coating can be applied to semiconductor integrated circuit devices, such as integrated circuits and multichip modules, in a time efficient and cost effective process to permit coating application on a mass production level. The protective coating can be applied in whole or in part to assembled MCM and IC devices.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

is a sectional view of an integrated circuit or multichip module prior to the application of a protective opaque coating in accordance with the present invention.





FIG. 2

is a schematic elevational view of the protective opaque coating being applied to the integrated circuit or multichip module shown in FIG.


1


.





FIG. 3

is a sectional view similar to

FIG. 1

of the integrated circuit or multichip module with the protective opaque coating applied thereto.











DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT




A semiconductor integrated circuit device, such as an integrated circuit (IC) or multichip module (MCM)


10


to be coated in accordance with the present invention is illustrated generally in FIG.


1


. The IC or MCM


10


includes a single, active circuitry semiconductor chip


12


(in the case of an IC) or multiple, active circuitry semiconductor chips


12


(in the case of a MCM). The semiconductor chip(s)


12


is mounted on a surface


13


of a substrate


14


and includes lead wires


16


that are connected to pads


18


also mounted on the surface


13


of the substrate


14


. The pads


18


serve as ports for electrical connection to external sources (not shown). The substrate


14


with the chip(s)


12


and pads


18


mounted thereto is housed within a ceramic package


20


defined by a base member


22


, a lid member


24


and a lid seal


26


(the lid member


24


and lid seal


26


not being shown in FIG.


1


.).




The IC or MCM


10


is coated with a protective opaque coating


28


(see

FIG. 3

) by a thermal spray process


29


illustrated in FIG.


2


. The thermal spray process


29


, of the present invention, is a line of sight coating process that includes a thermal spray gun


30


having a nozzle


31


. A heat energy source


32


is delivered to the nozzle


31


(in a known manner) to heat a ceramic particle based coating composition


33


also delivered to the nozzle


31


(in a known manner). The heat energy source


32


uses a flame


34


to heat the coating composition


33


to a molten state defined by molten liquefied particles


35


. The molten liquefied particles


35


defining the coating composition


33


are carried to the IC or MCM


10


by a carrier gas jet


36


also delivered to the nozzle


31


(in a known manner). The IC or MCM


10


is supported on a support element


38


that may act as heat sink during the coating process.




The thermal spray process


29


first requires the preparation of the ceramic particle based coating composition


33


. It is desirable that the chemistry of the coating composition


33


be similar to the chemistry of the materials of the IC or MCM


10


, such that attempted removal of the protective opaque coating


28


(formed from the coating composition


33


) from the IC or MCM


10


(for inspection and/or reverse engineering of the topology of the IC or MCM) via chemical methods will simultaneously destroy the IC or MCM


10


. In the present invention, the coating composition


33


may be a single chemical component or a multi chemical component composition, partially or entirely formed from any one of alumnina, beryllia, silica, silicon carbide, aluminum nitride, fused alumina-titanium oxide, fused alumina-titanium dioxide and nylon or alumina-titanium oxide, barium titanate, or other ceramic oxides or silicates and teflon. In one preferred embodiment fused alumina-titanium oxide was found to provide a desirable coating composition


33


for the protective opaque coating


28


.




The coating composition


33


is prepared by manufacturing the chemical materials of the coating composition


33


into a powder or sintered rod having particle sizes within the range of ten microns to sixty microns. Particle sizes in excess of sixty microns tend to cause mechanical damage to the IC or MCM


10


due to that force at which the carrier gas jet


36


delivers the molten liquefied particles


35


to the IC or MCM


10


. Particle sizes less than ten microns tend to cause transformation of the particle based coating composition


33


into a liquid stream (rather than molten liquefied particles


35


) that may be difficult to control during the application process. In one preferred embodiment, a coating composition


33


prepared in the form of a sintered rod with the coating composition


33


having a particle size within the range of ten microns to twenty microns is desirable.




Once the coating composition


33


is prepared, the coating composition


33


, the heat energy source


32


and the carrier gas jet


36


are simultaneously delivered to the nozzle


31


of the thermal spray gun


30


. The heat energy source


32


can take the form of a plasma arc, an electric arc or a fuel gas. In one preferred embodiment, the heat energy source is a fuel gas


40


(preferably acetylene) which is combined with oxygen


42


to create that flame


34


that is of a temperature sufficient to transform the ceramic particle based coating composition


33


to molten liquefied particles


35


. In one preferred embodiment, this temperature is in the range of between 200° C. and 2500° C. The molten liquefied particles


35


are applied to the IC or MCM


10


via the carrier gas jet


36


which carries the molten liquefied particles


35


to the IC or MCM


10


and causes the particles


35


to impact upon the IC or MCM


10


. The molten liquefied particles


35


undergo a “splat” upon impact with the surface of the IC or MCM


10


, and then coalesce to form a contiguous coating that thickens with continued successive depositions of the molten liquefied particles


35


to form the lamellar protective opaque coating


28


. In one preferred embodiment, the carrier gas jet


36


is pressurized nitrogen which is delivered to the nozzle


31


of the thermal spray gun


30


in the range of 10-100 cfm.




As seen in

FIG. 2

, in practice, the nozzle


31


of the thermal spray gun


30


is positioned above the IC or MCM


10


which is held in place by the support element


38


which can draw heat away from the IC or MCM


10


during the application process. Typically, the nozzle


31


is positioned from the IC or MCM


10


within the range of between five inches and seven inches. In one preferred embodiment, the nozzle


31


is positioned six inches from the IC or MCM


10


. The molten liquefied particles


35


can be applied in successive layers or as a single burst depending upon the desired coating thickness and the thermal limitations of the IC or MCM


10


. In one preferred embodiment, the thickness of the formed protective coating


28


is in the range of between 1 mils and 100 mils. The molten liquefied particles


35


are applied by moving the nozzle


31


of the thermal spray gun


30


back and forth over the surface of the IC or MCM


10


, or by moving the IC or MCM


10


relative to the nozzle


31


, or by moving both the nozzle


31


and the IC or MCM


10


relative to one another. In one preferred embodiment, the nozzle


31


is moved relative to a moving IC or MCM


10


.




Once the molten liquefied particles


35


are applied, they form a lamellar protective opaque coating that adhesively bonds to the surface of the IC or MCM


10


and is abrasion resistant, provides a hermetic seal, and prevents both active and passive, chemical, optical and radiation based inspection and/or reverse engineering of the active and inactive circuitry of the IC or MCM


10


. As seen in

FIG. 3

, the formed protective opaque coating


28


completely covers the semiconductor chip(s)


12


, lead wires


16


, pads


18


and the surface


13


of the substrate


14


housed within the base member


22


. However, the protective, opaque coating


28


may be applied so as to only partially or completely cover any one of or more of the semiconductor chip(s)


12


, leads


16


, pads


18


and/or surface


13


. Once the protective opaque coating


28


is formed, the lid seal


26


and the lid member


24


are mounted on the base member


22


to further hermetically seal the IC or MCM


10


.




The molten liquefied particles


35


can be applied to the surface of the IC or MCM


10


(to achieve complete coverage as shown in

FIG. 3

) in 15 to 600 seconds. The protective opaque coating


28


can be fully applied and cooled and the IC or MCM


10


ready for use in only 1 to 70 minutes. Therefore, the thermal spray process is capable of producing inspection and/or reverse engineering proof IC's or MCM's


10


in a time efficient and cost effective manner that permits coating application on a mass production level.




Although the present invention has been described with reference to preferred embodiments, workers skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention.



Claims
  • 1. A method of forming an opaque coating directly on a semiconductor integrated circuit comprising:preparing a coating composition in the form of particles; heating the coating composition in a flame in a thermal spray nozzle to have a temperature to transform the particles into molten droplets; and applying a gas propellant to the flame to propel the molten droplets over a distance to the semiconductor integrated circuit device to form an opaque coating on the surface when the molten particles cool on the surface, said distance being such that said molten droplets are cooled as they are propelled and solidify on contacting said semiconductor integrated circuit device, whereby said semiconductor circuit is heated by said molten droplets to a temperature below the melting point of said droplets.
  • 2. The method of claim 1 wherein:a fuel gas and oxygen are supplied to a nozzle of a thermal spray gun to create a flame at a spray temperature that melts the particles into molten droplets and the particles are injected into the flame and said nozzle is passed successively over said semiconductor integrated circuit at said distance to build up said opaque coating.
  • 3. The method of claim 2 wherein:pressurized air is applied to the nozzle to create said gas propellant.
  • 4. The method of claim 3 wherein the coating composition is delivered to the nozzle of the thermal spray gun in the form of a powder.
  • 5. The method of claim 3 wherein the coating composition is delivered to the nozzle of the thermal spray gun in the form of a sintered rod.
  • 6. The method of claim 1 wherein the coating composition is selected from the group of alumina, barium titanate, fused alumina-titanium oxide, fused alumina-titanium dioxide nylon, fused alumina-titanium oxide or bartium titanate and.
  • 7. The method of claim 1 wherein the coating composition is fused alumina-titanium oxide having a particle size in the range of ten microns to sixty microns.
  • 8. The method of claim 1 wherein the particle size is within the range of ten to twenty microns.
  • 9. The method of claim 1 wherein the temperature sufficient to transform the coating composition to a molten state is in the range of between 200° C. and 2500° C.
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Number Name Date Kind
3844729 Sedlatschek et al. Oct 1974
4486945 Aigoo Dec 1984
4962152 Leempoel Oct 1990
4963751 Kano et al. Oct 1990
5053992 Gilberg et al. Oct 1991
5057900 Yamazaki Oct 1991
5208467 Yamazaki May 1993
5227111 Brangers et al. Jul 1993
5258334 Lantz, II Nov 1993
5285967 Weidman Feb 1994
5302671 Cifuentes et al. Apr 1994
5352491 Cifuentes et al. Oct 1994
5399441 Bearinger et al. Mar 1995
5420222 Stepp et al. May 1995
5425947 Hautekeer et al. Jun 1995
5451814 Yoshimizu Sep 1995
5710203 Camilletti et al. Jan 1998
5720818 Donde et al. Feb 1998