M. Hourai, T. Nagashima, E. Kajita, S. Miki, S. Smita, M. Sano and T. Shigematsu, "Oxygen Precipitation Behavior In Silicon During Czochralski Crystal Growth," in Semiconductor Silicon 1994, pp. 156-167, Eds., H.R. Huff, W. Bergholz and K. Sumino (Princeton, NJ; The Electrochem. Soc., 1994). |
H. Harada, T. Abe and J. Chikawa, "Oxygen Precipitation Enhanced With Vacancies In Silicon," Semiconductor Silicon 1986, pp. 76-85, Eds., H.R. Huff, T. Abe and B.O. Kolbesen Pennington, NJ; The Electrochem Soc., 1986). |