Number | Date | Country | Kind |
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5-046081 | Feb 1993 | JPX |
This application is a divisional of copending application Ser. No. 08/194,507, filed on Feb. 10, 1994 pending, the entire contents of which are hereby incorporated by reference.
Number | Name | Date | Kind |
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4931133 | Gualtieri et al. | Jun 1990 | |
5322588 | Habu et al. | Jun 1994 |
Number | Date | Country |
---|---|---|
60-5095 | Nov 1985 | JPX |
61-158897 | Jul 1986 | JPX |
62-003097 | Jan 1987 | JPX |
63-206393 | Aug 1988 | JPX |
2-167883 | Jun 1990 | JPX |
5-70294 | Mar 1993 | JPX |
5-262596 | Oct 1993 | JPX |
Entry |
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Paper Presented at 6th Conf. on Semi-insulating III-V Materials, Canada, 1990 Chapt. 3, pp. 199-204, 1990, W. A. Bonner, et al. |
Research Report of Sizuoka Univ., Elec. Eng. Inst., vol. 20, pp. 193-197, 1985, Tokuzo Sukegawa, et al. |
Journal of Crystal Growth, 112 (1991) 33 38, LEC Growth of InGaAs . . . Toshihiro Kusunoki, et al.-Dec. 31, 1990. |
Journal of Crystal Growth, 113 (1991) 485-490, Growth of ternary In.sub.x Ga.sub.1 . . . Kazuo Nakajima, et al.-Nov. 15, 1990. |
Number | Date | Country | |
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Parent | 194507 | Feb 1994 |