Takeda et al, "Characterization of InP Grown by CMVPE Using Tertiery-butylphosphine for the Phosphorous Source", Jap. Jour. of Applied Physics, vol. 29, No. 1 Jan. 1990 pp. 11-18. |
Pan et al, "InAlAs/InP Modulation Doped Heterostructure by Atmospheric Pressure . . . ", Applied Physics Letters 61(21) Nov. 23, 1992 pp. 2572-2574. |
M. Sugo et al.: "n.sup.+ -p-p.sup.+ Structure InP Solar Cells Grown by Organometallic Vapor-Phase Epitaxy," IEEE Transactions On Electron Devices, vol. ED-34, No. 4, Apr. 1987, New York, N.Y., pp. 772-777. |
B. Rose et al.: "Si Incorporation in InP using a Disilane Source in Metalorganic Vapour Phase Epitaxy at Atmospheric Pressure," Journal Of Crystal Growth, vol. 94, No. 3, Mar. 1989, Amsterdam, NL, pp. 762-766. |
U. Sudarsan et al.: "Ultraviolet laser-induced low-temperature epitaxy of GaP," Applied Physics Letters, vol. 55, No. 8, 21 Aug. 1989, New York, N.Y., pp. 739-740. |
R. Huang et al.: "High quality Fe-doped semi-insulating InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy using tertiarybutylphosphine," Applied Physics Letters, vol. 58, No. 2, 14 Jan. 1991, New York, N.Y., pp. 170-172. |