Number | Name | Date | Kind |
---|---|---|---|
3387286 | Dennard | Jun 1968 | |
3811076 | Smith, Jr. | May 1974 | |
3841926 | Garnache et al. | Oct 1974 | |
4343082 | Lepselter et al. | Aug 1982 | |
4365405 | Dickman et al. | Dec 1982 | |
4398341 | Geipel, Jr. et al. | Aug 1983 |
Number | Date | Country |
---|---|---|
55-154759(A) | May 1979 | JPX |
56-91829 | Dec 1982 | JPX |
Entry |
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IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb., 1979, pp. 3823-3825, "Double Polysilicon Dynamic Random-Access Memory Cell with Increased Charge Storage Capacitance", by V. L. Rideout. |
Johnson, Jr. et al., "Etch Stop for R.I.E. of Polysilicon", IBM Tech. Discl. Bull., vol. 21, No. 2, Jul. 1978, pp. 599-600. |
Howard et al., "Process for SBD Metallurgies", IBM Tech. Discl. Bull., vol. 22, No. 5, Oct. 1979, pp. 1823-1824. |