H. Ahne et al., "CARL Resist: A Technology for Optical Quarter Micron Resolution and Below", Siemens Review--R & D Special--Spring 1991, pp. 23-27. |
M. Sebald ey al., "Chemical Amplification of Resist Lines (CARL) A Novel Sub-Halfmicron Bilayer Resist Technique For NUV and Deep UV Lithography", SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990), pp. 528-537. |
N. Yasuhara et al., "SOI Device Structures Implementing 650 V High Voltage Output Devices On VLSIs", IEDM 1991, pp. 141-144. |
A. Nakagawa et al., "New 500V Output Device Structures For Thin Silicon Layer on Silicon Dioxide Film", Proceedings of 1990 International Symposium on Power Semiconductor Devices & ICs. Tokyo, pp. 97-101. |
IBM Technical Disclosure Bulletin, "Sidewall Channel-Stop Doping For Deep Trench Isolation of FET Devices", vol. 27, No. 10A, Mar. 1985, pp. 5501-5504. |
IBM Technical Disclosure Bulletin, "Schottky Diode Butting Against Recessed Oxide Isolation", vol. 27, No. 7B, Dec. 1984, pp. 4503-4508. |
Y. Ohota et al. "Dielectrically Isolated Intelligent Power Switch", IEEE 1987, Custom Integrated Circuits Conference, pp. 443-446. |