Claims
- 1. A process of forming mask images which comprises imagewise exposing a photographic light-sensitive material comprising a transparent support having thereon in succession a mask layer and a layer of an emulsion of silver halide in a binder followed by development without employing fixing processing to form silver images at the image areas; removing the silver images at the image areas with an aqueous solution containing ceric sulfate and sulfuric acid; reducing the silver halide remaining at the non-image areas to silver; halogenating the silver formed in the non-image areas with an aqueous solution containing bichromate ions and halogen ions; heating the photographic material to temperatures higher than about 200.degree. C. but less than about 300.degree. C. to thermally decompose the binder in the silver halide emulsion layer; selectively removing the thermally decomposed binder at the image areas with a solution capable of removing the thermally decomposed binder to uncover areas of the mask layer thereunder; and then removing the uncovered areas of the mask layer by etching.
- 2. The process as claimed in claim 1, wherein the process includes reducing the silver halide of the photographic material formed by halogenating the silver at the non-image areas to silver prior to heating.
- 3. The process as claimed in claim 1, wherein the mask layer comprises a layer of a metal oxide selected from the group consisting of silicon monoxide, chromic oxide, ferric oxide, a ferromagnetic oxide, cuprous oxide, and cupric oxide.
- 4. The process as claimed in claim 1, wherein the mask layer comprises a layer of a metal selected from the group consisting of chromium, aluminum, silver, titanium, cobalt, tungsten, tellurium, nickel, and a nickel-chromium alloy.
- 5. The process as claimed in claim 1, wherein the mask layer comprises a layer of a semimetal selected from the group consisting of silicon and germanium.
- 6. The process as claimed in claim 1, wherein the mask layer comprises a layer of a material selected from the group consisting of Cr-Cr.sub.2 O.sub.3, Co-Co.sub.2 O.sub.3, Si-SiO.sub.2 and Si-Ge.
- 7. The process as claimed in claim 1, wherein the mask layer comprises a layer of a chalcogen glass selected from the group consisting of As-S-Ge, As-Se-Ge, Ge-Se and Ge-S.
- 8. The process as claimed in claim 1, wherein the thickness of the mask layer is from about 0.01 .mu.m to about 5.0 .mu.m.
- 9. The process as claimed in claim 1, wherein the thickness of the silver halide emulsion layer is from about 0.3 .mu.m to about 10 .mu.m.
- 10. The process as claimed in claim 1, wherein the aqueous solution of ceric sulfate and sulfuric acid contains about 2 to about 200 g/liter of ceric sulfate and about 2 to 200 ml/liter of sulfuric acid of a concentration of about 98% by weight.
Priority Claims (1)
Number |
Date |
Country |
Kind |
51/107013 |
Sep 1976 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 830,974, filed Sept. 7, 1977, now abandoned.
US Referenced Citations (5)
Continuations (1)
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Number |
Date |
Country |
Parent |
830974 |
Sep 1977 |
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