The present invention is directed to electronic components and processes or producing electronic components. More particularly, the present invention is directed to energetically-beam melting.
Known electrical contacts and terminals typically three-dimensional (3D) structures which are produced in a roll-to-roll process. The typical process starts with a flat metal feedstock and then performs two steps: 1) electroplating of the electrical contact or electroplating of a diffusion barrier followed by electroplating of the contact, 2) stamped and formed into the final 3D structures. Depending on the application and metals used, the process can start with electroplating and then forming or vice versa.
The process of printing and energetic beam melting to produce electrical contacts over two-dimensional (2D) surfaces has shown contact property improvements. See, for example, U.S. Patent Publication No. 2014/0097002, which is hereby incorporated by reference in its entirety. Printing and energetic beam melting over 2D surfaces requires that the part be stamped and formed after the metal deposition process, which works for some metal contact and diffusion barrier materials, but not all. Frequently, product specifications require that the contacts and terminals are stamped and formed before the precious metal deposition step in order to reduce likelihood of the precious metal contact being damaged during the forming process. Since energetic beam melting is a line of sight method, energetic beam melting contact finishes over 3D surfaces has not been accomplished in known processes.
Deposition of conductive inks via different printing technologies is a growing technology, with limitations on compatibility for existing techniques. Such limitations render it difficult to utilize the perceived selectivity and ability to produce lower feature-sized electrical contacts. For example, reliance upon metallization techniques on printed features is problematic because they are very complicated thermodynamic and kinetic processes.
Flexibility and breadth of use for electrical contact layers is highly desirable. Prior techniques have not had sufficient control of properties associated with electrical contact layers and, thus, have been limited in application. For example, prior techniques have not adequately permitted inclusion of nanocrystalline structures and/or amorphous structures, permitted creation of medium or larger grains, permitted pore-free or substantially pore-free layers, permitted a gradient of elemental or compositional metals or alloys, permitted formation of a grain boundary strengthened by grain boundary engineering, permitted grain pinning, permitted higher surface hardness, permitted higher wear resistance, permitted diffusion of elements or formation of an interdiffusion layer, permitted higher corrosion resistance, or permitted combinations thereof.
Electroplating of electrical contacts is a common process which requires large volumes of plating bath chemicals, large area physical footprint, and consumes large quantities of precious metals. Due to environmental regulations, electroplating lines are typically segregated to specific geographic zones and undergo high levels of regulatory scrutiny.
An electronic component and process of producing an electronic component that show one or more improvements in comparison to the prior art would be desirable in the art.
In an embodiment, a process of producing a component, the process including positioning a substrate having a non-planar surface, applying a metalizing material on the surface and energetically beam-melting the metalizing material to produce a metalized electrical contact on the component.
In another embodiment, a component includes a substrate having a non-planar surface, and a printed and energetically beam-melted metalized electrical contact positioned on the non-planar surface.
In another embodiment, a component includes a substrate having a non-planar surface, and a rotationally-applied and energetically beam-melted metalized electrical contact positioned on the substrate.
Other features and advantages of the present invention will be apparent from the following more detailed description, taken in conjunction with the accompanying drawings, which illustrate, by way of example, the principles of the invention.
Wherever possible, the same reference numbers will be used throughout the drawings to represent the same parts.
Provided are electronic components and processes of producing electronic components. Embodiments of the present disclosure, for example, in comparison to concepts failing to include one or more of the features disclosed herein, permit inclusion of nanocrystalline structures and/or amorphous structures, permit creation of medium or larger grains, such as grains from about 0.5 μm to about 4 μm grains, permit pore-free or substantially pore-free layers, permit a gradient of elemental or compositional metals or alloys, permit formation of a grain boundary strengthened by grain boundary engineering via alloying element/compound additions, permit formation of a grain boundary pinning via alloying elements and insoluble particle, permit higher surface hardness, permit higher wear resistance, permit diffusion of elements or formation of an interdiffusion layer, permit higher corrosion resistance, or permit combinations thereof. The method, according to embodiments of the present disclosure, includes a process that is more environmentally friendly and includes selective deposition of precious metals that do not require electroplating. Processes, according to embodiments of the present disclosure, include higher throughput speeds, smaller footprint, and reduced precious metal consumption. In addition to process advantages, the technique generates desirable grain structures, alloys, and microstructures that provide desired physical properties.
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The surface 105 includes a non-planar geometry. In one embodiment, the surface 105 a non-planar surface, for example, being stepped, angled, cuboid, curved, circular, elliptical or any other surface that includes surfaces that deviate from a planar surface. In one embodiment, the surface 105 is or includes a non-metallic and non-conductive material.
Although not shown, a diffusion barrier layer may be applied to the substrate 103 prior to application of the metalizing material 107 to reduce or eliminate diffusion of the substrate material. The barrier layer includes any suitable barrier material, such as, but not limited to, nickel (Ni), titanium (Ti), molybdenum (Mo), tungsten (W), tantalum (Ta), niobium (Nb), zirconium (Zr), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), manganese (Mn), iron (Fe), hafnium (Hf), rhenium (Re), zinc (Zn), or a combination thereof. The composition of the diffusion barrier layer corresponds with the composition of the substrate and the metalizing material 107.
The applying (step 104) is or includes any printing technique capable of selectively placing the metalizing material 107 directly on the surface 105 or indirectly on the surface 105, for example, through one or more additional interlayers 201, as is shown in
In one embodiment, the interlayer(s) 201 is a silane-derived layer between the substrate 103 and the metalizing layer 107. The silane-derived layer is applied prior to the applying (step 104) of the metalizing layer 107 and the energetically beam-melting (step 106). In a further embodiment, the silane-derived layer is applied by hydroxylation, silanization, and immersion. Nanoparticles are deposited on the silane layer from the colloid solution.
To deposit nanoparticles on the silane layer, the silanized substrate is immersed or otherwise contacted with a colloid solution. The colloid solution contains dispersed nanoparticles formed by reducing a gold salt using a mild reducing agent. Without presence of the colloid, metalizing layer 107 cannot be deposited. Particles suitable for use in the colloid include particles having a maximum dimension from about 10 nm to about 10 microns.
In one embodiment, the interlayer 201 is a silane coating. The silane coating may be applied according to known silane coating techniques. In one embodiment, the silane coating is provided by formation of hydroxyl/oxide groups on the surface of the substrate by immersing the substrate into i) Piranha solution, ii) Boiling water/steam, iii) alkaline cleaning solution (sodium phosphate+sodium carbonate solution @˜75° C.) and thereafter immersing the substrate into 1 part organosilane: 4 parts methanol solution for 24 h. To form the colloid solution for metalizing layer 107, a gold salt is brought to a boil and a reducing agent is added. The concentration of the reducing agent in the solution determines the size of suspended particles. In one embodiment, the silanized substrate is immersed into gold colloid solution for 1-5 days for particles to be self-assembled on the substrate surface. Known techniques for the silane formation and colloid formation are described in G. Frens, “Controlled Nucleation for the Regulation of the Particle Size in Monodisperse Gold Suspensions”, Nature Physical Science, Vol. 241, p. 20 (1973); K. C. Grabar et al., “Preparation and Characterization of Au Colloid Monolayers”, Analytical Chemistry, Vol. 67, p. 735 (1995) and; A. D. Kammers, S. Daly, “Self-Assembled Nanoparticle Surface Patterning for Improved Digital Image Correlation in a Scanning Electron Microscope”, Experimental Mechanics, Vol. 53, p. 1333 (2013), each of which is incorporated by reference in their entirety.
Printing of metalizing material 107 over non-planar surfaces is accomplished by any suitable process for printing material onto non-planar surfaces. Suitable processes include, for example, contact roll-to-roll methods including flexographic, or offset printing, rotary screen, as well as non-contact methods when combined with 3D automated movement including discrete droplet jetting, filament dispensing, spray coating, aerosol jet, and inkjet.
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Other processes suitable for printing the metalizing material 107 onto the substrate include, but are not limited to, rotational printing, screen printing, pad printing and/or offset printing.
The metalizing material 107 is any suitable material capable of being formed and/or processed into the metalized electrical contact 109. In one embodiment, the metalizing material 107 includes conductive nanoparticles having maximum dimensions of between 10 nm and 10 microns. Suitable metallic components for inclusion in the metalizing material 107 include, but are not limited to, gold (Au), silver (Ag), tin (Sn), molybdenum (Mo), titanium (Ti), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), aluminum (Al), ruthenium (Ru), or combinations thereof. In one embodiment with gold in the metalizing material 107, the metalizing material 107 has a volatile organic compound of less than 2%, by volume.
The energetic beam melting is achieved by any suitable techniques. Suitable techniques include, but are not limited to, applying a continuous energetic beam (for example, from a CO2 laser or electron beam), applying a pulsed energetic beam (for example, from a neodymium yttrium aluminum garnet laser), applying a focused beam, applying a defocused beam, or performing any other suitable beam-based technique. Energetic beam melting is with any suitable parameters, such as, penetration depths, pulse duration, beam diameters (at contact point), beam intensity, and wavelength.
Energetic beam melting, according to the present disclosure, utilizes a line of sight method with manipulation of the beam and/or workpiece to provide beam contact with the non-planar surface. For example, suitable processes, according to the present disclosure, include in-process changes to the beam focal distance or substrate z-height for surfaces that are within the line of sight as well as 3D automated substrate movement to access non line-of-sight surfaces. For example, in one embodiment, the substrate 103 with the metalizing material 107 is manipulated robotically to various orientations with respect to the energetic beam.
Suitable penetration depths depend upon the composition and the beam energies. For example, for Cu or Cu-containing compositions, suitable penetration depths at 20 kV include, but are not limited to, between 1 and 2 micrometers, between 1 and 1.5 micrometers, between 1.2 and 1.4 micrometers, or any suitable combination, sub-combination, range, or sub-range therein. For Cu or Cu-containing compositions, suitable penetration depths at 60 kV include, but are not limited to, between 7 and 9 micrometers, between 7.5 and 8.5 micrometers, between 7.8 and 8.2 micrometers, or any suitable combination, sub-combination, range, or sub-range therein.
For Ag or Ag-containing compositions, suitable penetration depths at 20 kV include, but are not limited to, between 1 and 2 micrometers, between 1 and 1.5 micrometers, between 1.2 and 1.4 micrometers, or any suitable combination, sub-combination, range, or sub-range therein. For Ag or Ag-containing compositions, suitable penetration depths at 60 kV include, but are not limited to, between 8 and 9 micrometers, between 8.2 and 8.8 micrometers, between 8.4 and 8.6 micrometers, or any suitable combination, sub-combination, range, or sub-range therein.
For Au or Au-containing compositions, suitable penetration depths at 20 kV include, but are not limited to, between 0.5 and 1.5 micrometers, between 0.7 and 1.3 micrometers, between 0.8 and 1 micrometers, or any suitable combination, sub-combination, range, or sub-range therein. For Au or Au-containing compositions, suitable penetration depths at 60 kV include, but are not limited to, between 3 and 7 micrometers, between 4 and 6 micrometers, between 4.5 and 5.5 micrometers, or any suitable combination, sub-combination, range, or sub-range therein.
Suitable pulse durations include, but are not limited to, between 4 and 24 microseconds, between 12 and 100 microseconds, between 72 and 200 microseconds, between 100 and 300 microseconds, between 250 and 500 microseconds, between 500 and 1,000 microseconds, or any suitable combination, sub-combination, range, or sub-range therein.
Suitable beam widths include, but are not limited to, between 25 and 50 micrometers, between 30 and 40 micrometers, between 30 and 100 micrometers, between 100 and 150 micrometers, between 110 and 130 micrometers, between 120 and 140 micrometers, between 200 and 600 micrometers, between 200 and 1,000 micrometers, between 500 and 1,500 micrometers, or any suitable combination, sub-combination, range, or sub-range therein.
Suitable beam intensities include, but are not limited to, having a power output of between 2000 watts to 10 kilowatts, between 10 kilowatts to 30 kilowatts, between 30 to 100 kilowatts, between 0.1 and 2,000 watts, between 1,100 and 1,300 watts, between 1,100 and 1,400 watts, between 1,000 and 1,300 watts, between 50 and 900 watts, between 4.5 and 60 watts, between 1 and 2 watts, between 1.2 and 1.6 watts, between 1.2 and 1.5 watts, between 1.3 and 1.5 watts, between 200 and 250 milliwatts, between 220 and 240 milliwatts, or any suitable combination, sub-combination, range, or sub-range therein.
In embodiments utilizing the laser for the energetic beam melting, suitable wavelengths include, but are not limited to, between 10 and 11 micrometers, between 9 and 11 micrometers, between 10.5 and 10.7 micrometers, between 1 and 1.1 micrometers, between 1.02 and 1.08 micrometers, between 1.04 and 1.08 micrometers, between 1.05 and 1.07 micrometers, or any suitable combination, sub-combination, range, or sub-range therein.
While the invention has been described with reference to one or more embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims. In addition, all numerical values identified in the detailed description shall be interpreted as though the precise and approximate values are both expressly identified.