Claims
- 1. A process for chemical vapor deposition comprising the sequential steps of:
- forming a solution by adding a metallic organic compound having a group which is dissociable from the metallic organic compound upon decomposition of the metallic organic compound and which bonds with a metal (M) in said metallic organic compound in a bond form selected from the group consisting of C--M bond, N--M bond, O--M bond, S--M bond and P--M bond to a liquid compound which consists essentially of a same group as said dissociable group of said metallic organic compound;
- decomposing said metallic organic compound; and
- depositing a film containing said metal from said metallic organic compound on a substrate.
- 2. The process for chemical vapor deposition of claim 1, wherein said metallic organic compound and said liquid compound are vaporized.
- 3. The process for chemical vapor deposition of claim 1, wherein said liquid compound is DPMH and said metallic organic compound is a compound selected from the group consisting of DPM.sub.2 Cu, DPM.sub.2 TiO and DPM.sub.2 Pb.
- 4. The process for chemical vapor deposition of claim 1, wherein said liquid compound is trien and said metallic organic compound is a compound selected from the group consisting of DPM.sub.2 Cu.trien.sub.2, DPM.sub.2 Sr.trien.sub.2 and DPM.sub.2 Pb.trien.sub.2.
- 5. The process for chemical vapor deposition of claim 1, wherein said liquid compound is AcacH and said metallic organic compound is a compound selected from the group consisting of Acac.sub.2 Cu, Me.sub.2 Au(Acac) and Acac.sub.2 Co.
- 6. The process for chemical vapor deposition of claim 1, wherein said liquid compound is Triethyl phosphine and said metallic organic compound is Cu cyclopentadienyl.triethyl phosphine.
- 7. The process for chemical vapor deposition of claim 1, wherein said liquid compound is 2-butyne and said metallic organic compound is HfaCu.2-butyne.
- 8. The process for chemical vapor deposition of claim 1, wherein said liquid compound is BTMSA and said metallic organic compound is HfaCu.BTMSA.
- 9. The process for chemical vapor deposition of claim 1, wherein said liquid compound is 1,5-cyclooctadiene and said metallic organic compound is HfaCu.1,5-cyclooctadiene.
- 10. The process for chemical vapor deposition of claim 1, wherein said liquid compound is HfaH and said metallic organic compound is a compound selected from the group consisting of Hfa.sub.2 Cu, Me.sub.2 AuHfa and Hfa.sub.2 Pt.
- 11. The process for chemical vapor deposition of claim 1, wherein said liquid compound is triethylamine and said metallic organic compound is a compound selected from the group consisting of AlH.sub.3.NEt.sub.3, Me.sub.3 Al.NEt.sub.3 and Me.sub.2 Zn.NEt.sub.3.
- 12. The process for chemical vapor deposition of claim 1, wherein said liquid compound is diethylmethylamine and said metallic organic compound is AlH.sub.3.NEt.sub.2 Me.
- 13. The process for chemical vapor deposition of claim 1, wherein said liquid compound is dimethylethylamine and said metallic organic compound is a compound selected from the group consisting of AlH.sub.3.NMe.sub.2 Et, Me.sub.3 Ga.NMe.sub.2 Et and Me.sub.3 In.NMe.sub.2 Et.
- 14. The process for chemical vapor deposition of claim 1, wherein said liquid compound is di-isopropylamine and said metallic organic compound is Me.sub.3 In.HN(i-C.sub.3 H.sub.7).sub.2.
- 15. The process for chemical vapor deposition of claim 1, wherein said liquid compound is tetraglyme and said metallic organic compound is DPM.sub.2 Sr.tetraglyme.sub.2.
- 16. The process for chemical vapor deposition of claim 1, wherein said liquid compound is triglyme and said metallic organic compound is a compound selected from the group consisting of DPM.sub.2 Sr.triglyme.sub.2, Hfa.sub.2 Sr.triglyme.sub.2 and DPM.sub.2 Ba.triglyme.sub.2.
- 17. The process for chemical vapor deposition of claim 1, wherein said liquid compound is tetraethylenepentamine and said metallic organic compound is DPM.sub.2 Ba.tetraethylenepentamine.sub.2.
- 18. The process for chemical vapor deposition of claim 1, wherein said liquid compound is isopropylalcohol and said metallic organic compound is a compound selected from the group consisting of PbEt.sub.3 (i-OPr) and Ti(i-OPr).sub.4.
- 19. The process for chemical vapor deposition of claim 1, wherein said liquid compound is diethylamine and said metallic organic compound is Ti(NEt.sub.2).sub.4.
- 20. The process for chemical vapor deposition of claim 1, wherein said liquid compound is benzene and said metallic organic compound is a compound selected from the group consisting of triphenyl bismuth and bis-benzene chromium.
- 21. The process for chemical vapor deposition of claim 1, wherein said liquid compound is toluene and said metallic organic compound is a compound selected from the group consisting of tris-o-toluylic bismuth and tris-m-toluylic bismuth.
- 22. The process for chemical vapor deposition of claim 1, wherein said liquid compound is HN(CH.sub.3)CH.sub.2 CH.sub.2 N(CH.sub.3).sub.2 and said metallic organic compound is MeZnN(CH.sub.3)CH.sub.2 CH.sub.2 N(CH.sub.3).sub.2.
- 23. The process for chemical vapor deposition of claim 1, wherein said liquid compound is ethanol and said metallic organic compound is (EtO).sub.5 Ta.
- 24. A process for chemical vapor deposition comprising the sequential steps of:
- forming a solution by adding a metallic organic compound having a group which is dissociable from the metallic organic compound upon decomposition of the metallic organic compound and in which a metal (M) of said metallic organic compound is selected from the group consisting of Au, Pt, Al, Zn, Ga, In, Sr, Ba, Pb, Ti, Bi, Cr, Ta and Co to a liquid compound which consists essentially of a group which is the same as said group in said metallic organic compound;
- decomposing said metallic organic compound; and
- depositing a film containing said metal from said metallic organic compound on a substrate.
- 25. The process for chemical vapor decomposition of claim 24, wherein said metallic organic compound is a compound represented by M.sub.n R.sup.1 . . . R.sup.m where M is said metal, R.sup.1 . . . R.sup.m are groups individually selected from the group consisting of organic groups, hydrogen and silicone compounds, n is an integer of from 1 to 4, and m is an integer of from 1 to 8, and said liquid compound to which said metallic organic compound is combined is R.sup.k or R.sup.k.H where k is an integer of from 1 to 8 and R is said dissociable group.
- 26. The process for chemical vapor deposition of claim 24, wherein said liquid compound bonds with said metal M of said metallic organic compound in a bond form selected from the group consisting of C--M bond, N--M bond, O--M bond, S--M bond, P--M bond and Si--M bond.
- 27. The process for chemical vapor deposition of claim 24, wherein said liquid compound is Me.sub.4 Si and said metallic organic compound is Ti(CH.sub.2 SiMe.sub.3).sub.4.
- 28. The process for chemical vapor deposition of claim 24, wherein said liquid compound is selected from the group consisting of triene, 1,5-cyclooctadiene, HfaH, tetraglyme, triglyme, tetraethylenepentamine and diethylamine.
Parent Case Info
This is a continuation of application Ser. No. 08/560,743, filed Nov. 20, 1995, now abandoned.
Foreign Referenced Citations (1)
Number |
Date |
Country |
1073524 |
Aug 1964 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Peterson et al., J. Electrochem. Soc., vol. 142, No. 3, pp. 939-943, Mar. 1995. |
Continuations (1)
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Number |
Date |
Country |
Parent |
560743 |
Nov 1995 |
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