Claims
- 1. An apparatus for processing wafers, comprising:
- (a) a vacuum processing chamber;
- (b) at least two wafer support members within said process chamber, each of said wafer support members having a plurality of horizontal slots therein arranged at different levels to form slot pairs, each pair of said slots being capable of supporting a single wafer, so that a plurality of wafers, one over another, is supported with each wafer having its face to be processed facing downward, and with substantially no damage to structures on the face of said wafer; and
- (c) a wafer transfer mechanism positioned to controllably transfer wafers through an openable port into selected pairs of said slots within said process chamber, said wafer transfer mechanism being capable of operation under high vacuum.
- 2. The apparatus of claim 1 wherein wafer transfer mechanism has sufficient controllable vertical movement to selectably place and/or remove wafers from selectable positions in said wafer support members.
- 3. The apparatus of claim 1 wherein said apparatus is capable of performing chemical vapor deposition.
- 4. The apparatus of claim 1 wherein said apparatus is capable of performing slow low pressure processes.
- 5. The apparatus of claim 4 wherein said apparatus is capable of performing gaseous oxide deposition.
- 6. An apparatus for processing of wafers, comprising:
- (a) a vacuum processing chamber;
- (b) at least two wafer support members within said process process chamber, each of said wafer support members having a plurality of horizontal slots therein arranged at different levels to form slot pairs, each pair of said slots being capable of supporting a single wafer, so that a plurality of wafers, one over another, is supported with each wafer having its face to be processed facing downward, and with substantially no damage to structures on the face of said wafer; and
- (c) a wafer transfer mechanism positioned to controllably transfer through a port with an open and closed positions into selected pairs of said slots within said process chamber, said wafer transfer mechanism being capable of operation at low pressure.
- 7. The apparatus of claim 1 wherein the wafer transfer mechanism is capable of controllably transferring wafers one at a time.
- 8. The apparatus of claim 6 wherein the wafer transfer mechanism is capable of controllably transferring wafers one at a time.
- 9. An apparatus for processing of wafers, comprising:
- (a) a processing chamber; and
- (b) at least two wafer support members within said process process chamber, each of said wafer support members having a plurality of horizontal slots therein arranged at different levels to form slot pairs, each pair of said slots being capable of supporting a single wafer, so that a plurality of wafers, one over another, is supported with each wafer having its face to be processed facing downward, and with substantially no damage to structures on the face of said wafer.
- 10. The apparatus of claim 9 wherein said apparatus is capable of performing chemical vapor deposition.
- 11. The apparatus of claim 9 wherein said apparatus is capable of performing slow low pressure processes.
- 12. The apparatus of claim 11 wherein said apparatus is capable of performing gaseous oxide deposition.
Parent Case Info
This application is a continuation, of application Ser. No. 07/075,019, filed Jul. 17, 1987, now abandoned.
US Referenced Citations (5)
Non-Patent Literature Citations (1)
Entry |
Tsang, App. Phys. Lett. 45(11), Dec. 1, 1984, pp. 1234-1236. |
Continuations (1)
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Number |
Date |
Country |
Parent |
75109 |
Jul 1987 |
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